DATA SHEET
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MOSFET - Power,
N-Channel, SUPERFET) III,
FAST
VDSS
RDS(ON) MAX
ID MAX
650 V
95 mW @ 10 V
30 A
D
650 V, 95 mW, 30 A
NTH4LN095N65S3H
G
Description
SUPERFET III MOSFET is onsemi’s brand−new high voltage
super−junction (SJ) MOSFET family that is utilizing charge balance
technology for outstanding low on−resistance and lower gate charge
performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET FAST series is very
suitable for the various power systems for miniaturization and higher
efficiency.
Features
•
•
•
•
•
•
700 V @ TJ = 150°C
Typ. RDS(on) = 77 mW
Ultra Low Gate Charge (Typ. Qg = 58 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 522 pF)
100% Avalanche Tested
These Devices are Pb−Free and are RoHS Compliant
S1: Driver Source
S2: Power Source
S2
S1
POWER MOSFET
D
S2
S1
G
TO−247−4LD
CASE 340CW
MARKING DIAGRAM
AYWWZZ
T095N
65S3H
Applications
• Telecom / Server Power Supplies
• Industrial Power Supplies
• UPS / Solar
A
YWW
ZZ
T095N65S3H
= Assembly Site Code
= Data Code (Year & Week)
= Assembly Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2020
August, 2021 − Rev. 3
1
Publication Order Number:
NTH4LN095N65S3H/D
NTH4LN095N65S3H
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
ID
Drain Current
Value
Unit
650
V
− DC
±30
V
− AC (f > 1 Hz)
±30
− Continuous (TC = 25°C)
30
− Continuous (TC = 100°C)
18
IDM
Drain Current
84
A
EAS
Single Pulsed Avalanche Energy (Note 2)
284
mJ
IAS
Avalanche Current (Note 2)
5.5
A
EAR
Repetitive Avalanche Energy (Note 1)
2.08
mJ
dv/dt
MOSFET dv/dt
120
V/ns
Peak Diode Recovery dv/dt (Note 3)
20
PD
TJ, TSTG
TL
− Pulsed (Note 1)
A
Power Dissipation
(TC = 25°C)
208
W
− Derate Above 25°C
1.67
W/°C
−55 to +150
°C
260
°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 5.5 A, RG = 25 W, starting TJ = 25°C.
3. ISD ≤ 15 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
RqJC
Thermal Resistance, Junction to Case, Max.
0.60
_C/W
RqJA
Thermal Resistance, Junction to Ambient, Max.
40
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
NTH4LN095N65S3H
T095N65S3H
TO−247 L4
Narrow Lead
Tube
N/A
N/A
30 Units
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2
NTH4LN095N65S3H
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
VGS = 0 V, ID = 1 mA, TJ = 25_C
650
−
−
V
VGS = 0 V, ID = 1 mA, TJ = 150_C
700
−
−
V
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
DBVDSS / DTJ
Breakdown Voltage Temperature
Coefficient
ID = 10 mA, Referenced to 25_C
−
0.63
−
V/_C
IDSS
Zero Gate Voltage Drain Current
VDS = 650 V, VGS = 0 V
−
−
1
mA
VDS = 520 V, TC = 125_C
−
1.8
−
IGSS
Gate to Body Leakage Current
VGS = ±30 V, VDS = 0 V
−
−
±100
nA
VGS = VDS, ID = 2.8 mA
2.4
−
4.0
V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 15 A
−
77
95
mW
Forward Transconductance
VDS = 20 V, ID = 15 A
−
30
−
S
−
2833
−
pF
−
43
−
pF
gFS
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 400 V, VGS = 0 V, f = 250 kHz
Coss(eff.)
Effective Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
−
522
−
pF
Coss(er.)
Energy Related Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
−
75
−
pF
−
58
−
nC
−
14
−
nC
−
15
−
nC
−
1.2
−
W
−
23
−
ns
−
6.5
−
ns
−
69
−
ns
−
2.5
−
ns
Maximum Continuous Source to Drain Diode Forward Current
−
−
30
A
ISM
Maximum Pulsed Source to Drain Diode Forward Current
−
−
84
A
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, ISD = 15 A
−
−
1.2
V
VDD = 400 V, ISD = 15 A,
dIF/dt = 100 A/ms
−
352
−
ns
−
5.8
−
mC
Qg(tot)
Total Gate Charge at 10 V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance
VDS = 400 V, ID = 15 A, VGS = 10 V
(Note 4)
f = 1 MHz
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
VDD = 400 V, ID = 15 A,
VGS = 10 V, Rg = 4.7 W
(Note 4)
Turn-Off Fall Time
SOURCE-DRAIN DIODE CHARACTERISTICS
IS
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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NTH4LN095N65S3H
TYPICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
6.0 V
ID, DRAIN CURRENT (A)
5.0 V
40
30
4.5 V
20
10
250 ms Pulse Test
VDS = 20 V
10
TJ = 25°C
VGS = 4.0 V
5
0
0.20
10
1
20
15
100
IS, REVERSE DRAIN CURRENT (A)
VGS = 10 V
VGS = 20 V
0.05
40
20
60
80
100
10
1
0.1
TJ = 150°C
0
0.2
TJ = 25°C
0.4
0.6
TJ = −55°C
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 3. On−Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VGS = 0 V
f = 250 KHz
Ciss
103
102
Coss
101
Crss
100
0
VGS = 0 V
250 ms Pulse Test
ID, DRAIN CURRENT (A)
104
10−1
6
Figure 2. Transfer Characteristics
0.10
105
5
4
Figure 1. On−Region Characteristics
TC = 25°C
0
3
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.15
0
TJ = −55°C
TJ = 150°C
2
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
106
CAPACITANCE (pF)
100
250 ms Pulse Test
TC = 25°C
7.0 V
50
0
RDS(on), DRAIN−SOURCE ON−RESISTANCE
10 V
VGS, GATE−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
60
100
200
300
400
500
600
10
VDS = 130 V
ID = 15 A
8
VDS = 400 V
6
4
2
0
0
10
20
30
40
50
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
60
NTH4LN095N65S3H
TYPICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
1.2
3.0
RDS(ON), NORMALIZED DRAIN−
SOURCE ON−RESISTANCE
BVDSS, NORMALIZED DRAIN−TO−
SOURCE BREAKDOWN VOLTAGE
VGS = 0 V
ID = 10 mA
1.1
1.0
0.9
0.8
−75 −50 −25
0
25
50
75
1.5
1.0
0.5
50
75
100 125 150 175
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On−Resistance Variation
vs. Temperature
40
10
100 ms
Operation in this
Area is Limited
by RDS(on)
1
1 ms
10 ms
TC = 25°C
TJ = 150°C
Single Pulse
1
20
10
DC
100
10
30
1000
0
25
75
100
125
TC, CASE TEMPERATURE (°C)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
8
6
4
2
0
50
VDS, DRAIN−SOURCE VOLTAGE (V)
10
EOSS (mJ)
25
TJ, JUNCTION TEMPERATURE (°C)
10 ms
0
0
TJ, JUNCTION TEMPERATURE (°C)
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
2.0
0
−75 −50 −25
100 125 150 175
100
0.1
VGS = 10 V
ID = 15 A
2.5
100
200
300
400
500
600
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. EOSS vs. Drain to Source Voltage
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5
150
NTH4LN095N65S3H
TYPICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
P DM
0.01
Single Pulse
t1
t2
0.01
0.00001
0.0001
0.001
0.01
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Transient Thermal Impedance
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ZqJC(t) = r(t) x RqJC
RqJC = 0.60°C/W
Peak TJ = PDM x ZqJC(t) + TC
Duty Cycle, D = t1/t2
0.1
1
NTH4LN095N65S3H
VGS
RL
Qg
VDS
VGS
Qgs
Qgd
DUT
IG = Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
RL
VDS
VDS
90%
90%
90%
VDD
VGS
RG
VGS
DUT
VGS
10%
td(on)
10%
tr
td(off)
ton
tf
toff
Figure 14. Resistive Switching Test Circuit & Waveforms
L
E AS + 1 @ LI AS
2
VDS
BVDSS
ID
IAS
RG
VDD
DUT
VGS
2
ID(t)
VDD
VDS(t)
tp
tp
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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Time
NTH4LN095N65S3H
+
DUT
VDS
−
ISD
L
Driver
RG
Same Type
as DUT
VGS
− dv/dt controlled by RG
− ISD controlled by pulse period
D+
VGS
(Driver)
VDD
Gate Pulse Width
Gate Pulse Period
10 V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(DUT)
VDD
VSD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET and FRFET are a registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United
States and/or other countries.
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8
NTH4LN095N65S3H
PACKAGE DIMENSIONS
TO−247 4−LEAD, THIN LEADS
CASE 340CW
ISSUE A
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9
NTH4LN095N65S3H
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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