NTHD4N02FT1G

NTHD4N02F Power MOSFET and Schottky Diode 20 V, 3.9 A, N−Channel, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals Super Low Gate Charge MOSFET Ultra Low VF Schottky Pb−Free Package is Available MOSFET V(BR)DSS RDS(on) TYP 60 mW @ 4.5 V 20 V SCHOTTKY DIODE • Fast Switching, low Gate Charge for DC−to−DC Buck and Boost • 3.9 A 80 mW @ 2.5 V Applications • ID MAX VR MAX VF TYP IF MAX 20 V 0.35 V 3.7 A Converters Li−Ion Battery Applications in Cell Phones, PDAs, DSCs, and Media Players Load Side Switching D1 A MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±12 V ID 2.9 A Continuous Drain Current Steady State TJ = 25°C TJ = 85°C 2.1 tv5s TJ = 25°C 3.9 tp=10 ms Pulsed Drain Current Power Dissipation IDM 12 A PD 0.91 W Steady State TJ = 25°C TJ = 85°C 0.36 tv5s TJ = 25°C 2.1 Continuous Source Current (Body Diode) S1 ChipFET] CASE 1206A STYLE 3 MARKING DIAGRAM PIN CONNECTIONS A 1 8 C 2 7 6 C 2 D 3 IS 2.6 TJ, TSTG −55 to 150 °C A TL 260 °C S 3 G 4 Lead Temperature for Soldering Purposes (1/8” from case for 10 s) C SCHOTTKY DIODE N−Channel MOSFET 1 A 5 C2 M G Operating Junction and Storage Temperature G1 4 D SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Steady State Symbol Value Unit VRRM 20 V VR 20 V IF 2.2 A 3.7 A TJ = 25°C tv5s Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2005 November, 2005 − Rev. 8 1 C2 = Specific Device Code M = Month Code G = Pb−Free Package ORDERING INFORMATION Package Shipping † NTHD4N02FT1 ChipFET 3000/Tape & Reel NTHD4N02FT1G ChipFET (Pb−Free) 3000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTHD4N02F/D NTHD4N02F THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient – Steady State (Note 1) RqJA 110 °C/W Junction−to−Ambient – t v 5 s RqJA 60 °C/W 1. Surface Mounted on FR4 Board using 1 in sq. pad size (Cu area = 1.27 in sq. [1 oz] including traces). MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ VGS = 0 V, ID = 250 mA 20 28 Max Units 1.0 mA OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V VDS = 16 V V Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = "12 V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.2 V Drain−to−Source On−Resistance RDS(on) VGS = 4.5, ID = 2.9 A 0.058 0.080 W VGS = 2.5, ID = 2.3 A 0.077 0.115 VDS = 10 V, ID = 2.9 A 6.0 TJ = 25°C TJ = 85°C 5.0 "100 nA ON CHARACTERISTICS (Note 2) Forward Transconductance gFS 0.6 S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge VGS = 0 V, f = 1.0 MHz, VDS = 10 V QG(TOT) VGS = 4.5 V, VDS = 10 V, ID = 2.9 A pF 180 300 80 130 30 50 2.6 4.0 nC ns Gate−to−Source Charge QGS 0.6 Gate−to−Drain Charge QGD 0.7 td(ON) 5.0 10 9.0 18 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time tr Turn−Off Delay Time Fall Time td(OFF) VGS = 4.5 V, VDD = 16 V, ID = 2.9 A, RG = 2.5 W tf 10 20 3.0 6.0 0.8 1.15 DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2) Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 2.6 A V ns 12.5 9.0 VGS = 0 V, IS = 2.6 A, dIS/dt = 100 A/ms 3.5 QRR 6.0 nC SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Max Units Maximum Instantaneous Forward Voltage VF IF = 0.1 A 0.31 V IF = 1.0 A 0.365 Maximum Instantaneous Reverse Current IR VR = 10 V 0.75 VR = 20 V 2.5 Halfwave, Single Pulse, 60 Hz 23 Non−Repetitive Peak Surge Current IFSM 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 Min Typ mA A NTHD4N02F TYPICAL MOSFET PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 8 VGS = 5 V to 3 V VDS ≥ 10 V TJ = 25°C VGS = 2.4 V 2V 2.2 V 6 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 8 4 1.8 V 2 1.6 V 1.4 V 4 2 100°C 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0 0.5 1 1.5 2 2.5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 0.15 ID = 2.9 A TJ = 25°C 0.1 0.05 0 1 3 5 2 4 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0 6 3 0.1 TJ = 25°C VGS = 2.5 V 0.07 VGS = 4.5 V 0.04 3 1 5 7 ID, DRAIN CURRENT (AMPS) Figure 4. On−Resistance vs. Drain Current and Gate Voltage Figure 3. On−Resistance vs. Gate−to−Source Voltage 1.7 100 ID = 2.9 A VGS = 4.5 V VGS = 0 V 1.5 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TC = −55°C 25°C 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 6 1.3 1.1 TJ = 100°C 10 0.9 0.7 −50 1 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 20 NTHD4N02F TYPICAL MOSFET PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VDS = 0 V 5 VGS = 0 V TJ = 25°C 20 QT 4.5 300 4 16 3.5 CRSS 3 12 2.5 200 2 ID = 2.9 A TJ = 25°C QGD QGS 1.5 100 COSS 8 1 4 0.5 0 10 5 VGS 0 VDS 5 10 15 20 0 0 0 0.5 1.5 2 2.5 3 QG, TOTAL GATE CHARGE (nC) GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 7. Capacitance Variation 100 7 IS, SOURCE CURRENT (AMPS) VDD = 16 V ID = 2.9 A VGS = 4.5 V t, TIME (ns) 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) CISS VGS, GATE−TO−SOURCE VOLTAGE (V) 400 tr 10 td(off) td(on) tf 1 1 10 RG, GATE RESISTANCE (W) 100 VGS = 0 V TJ = 25°C 6 5 4 3 2 1 0 0.3 0.45 0.6 0.75 0.9 1.05 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 1.2 NTHD4N02F TYPICAL SCHOTTKY PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 TJ = 150°C 1 TJ = 25°C TJ = −55°C 0.1 0.00 0.40 0.20 0.60 TJ = 150°C 1 TJ = 25°C 0.1 0.00 0.80 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100E−3 IR, REVERSE CURRENT (AMPS) 0.60 0.80 Figure 12. Maximum Forward Voltage IR, MAXIMUM REVERSE CURRENT (AMPS) Figure 11. Typical Forward Voltage 100E−3 TJ = 150°C 10E−3 TJ = 100°C 1E−3 100E−6 TJ = 150°C 10E−3 TJ = 100°C 1E−3 100E−6 TJ = 25°C 10E−6 0 10 VR, REVERSE VOLTAGE (VOLTS) TJ = 25°C 10E−6 20 0 PFO, AVERAGE POWER DISSIPATION (WATTS) 3.5 freq = 20 kHz 3 dc 2.5 square wave 2 Ipk/Io = p 1.5 Ipk/Io = 5 1 Ipk/Io = 10 0.5 Ipk/Io = 20 0 25 45 65 85 105 125 10 VR, REVERSE VOLTAGE (VOLTS) 20 Figure 14. Maximum Reverse Current Figure 13. Typical Reverse Current IO, AVERAGE FORWARD CURRENT (AMPS) 0.40 0.20 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 145 165 TL, LEAD TEMPERATURE (°C) 1.4 Ipk/Io = p 1.2 square wave dc Ipk/Io = 5 1 Ipk/Io = 10 0.8 Ipk/Io = 20 0.6 0.4 0.2 0 0 Figure 15. Current Derating 0.5 1 1.5 2 2.5 3 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 16. Forward Power Dissipation ChipFET is a trademark of Vishay Siliconix. http://onsemi.com 5 3.5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ChipFETt CASE1206A−03 ISSUE K 8 DATE 19 MAY 2009 1 SCALE 1:1 D 8 7 q 6 L 5 HE 5 6 7 8 4 3 2 1 E 1 2 3 e1 4 b e DIM A b c D E e e1 L HE q c RESET A 0.05 (0.002) STYLE 1: PIN 1. DRAIN 2. DRAIN 3. DRAIN 4. GATE 5. SOURCE 6. DRAIN 7. DRAIN 8. DRAIN STYLE 2: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 STYLE 3: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE STYLE 4: PIN 1. COLLECTOR 2. COLLECTOR 3. COLLECTOR 4. BASE 5. EMITTER 6. COLLECTOR 7. COLLECTOR 8. COLLECTOR MILLIMETERS NOM MAX 1.05 1.10 0.30 0.35 0.15 0.20 3.05 3.10 1.65 1.70 0.65 BSC 0.55 BSC 0.28 0.35 0.42 1.80 1.90 2.00 5° NOM MIN 1.00 0.25 0.10 2.95 1.55 INCHES NOM 0.041 0.012 0.006 0.120 0.065 0.025 BSC 0.022 BSC 0.014 0.011 0.071 0.075 5° NOM MIN 0.039 0.010 0.004 0.116 0.061 MAX 0.043 0.014 0.008 0.122 0.067 0.017 0.079 STYLE 6: STYLE 5: PIN 1. ANODE PIN 1. ANODE 2. DRAIN 2. ANODE 3. DRAIN 3. DRAIN 4. DRAIN 4. GATE 5. SOURCE 5. SOURCE 6. DRAIN 6. GATE 7. CATHODE 7. DRAIN 8. CATHODE 8. CATHODE / DRAIN GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTICAL SHALL NOT EXCEED 0.08 MM. 5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS. 6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE. 2.032 0.08 xxx MG G 2.362 0.093 0.65 0.025 PITCH xxx = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 8X 8X 0.66 0.026 0.457 0.018 mm Ǔ ǒinches Basic Style OPTIONAL SOLDERING FOOTPRINTS ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98AON03078D ChipFET Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com ChipFETt CASE 1206A−03 ISSUE K DATE 19 MAY 2009 ADDITIONAL SOLDERING FOOTPRINTS* 1 2.032 0.08 2.032 0.08 1 4X 0.457 0.018 2X 1.092 0.043 1.727 0.068 2.362 0.093 2.362 0.093 0.65 0.025 PITCH 4X 2X 2X 0.457 0.018 0.66 0.026 mm Ǔ ǒinches Styles 1 and 4 2.032 0.08 1.118 0.044 mm Ǔ ǒinches Style 2 2.032 0.08 2X 0.66 0.026 1 2X 0.66 0.026 1 1.092 0.043 2X 0.66 0.026 1.092 0.043 2.362 0.093 2.362 0.093 0.65 0.025 PITCH 2X 0.65 0.025 PITCH 1.118 0.044 0.457 0.018 1.118 0.044 ǒ mm inches 2X Ǔ 0.457 0.018 mm Ǔ ǒinches Style 5 Style 3 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON03078D ChipFET Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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