NTHL020N120SC1

MOSFET - SiC Power, Single N-Channel 1200 V, 20 mW, 103 A NTHL020N120SC1 Features • • • • • Typ. RDS(on) = 20 m Ultra Low Gate Charge (QG(tot) = 203 nC) Capacitance (Coss = 260 pF) 100% UIL Tested These Devices are RoHS Compliant www.onsemi.com V(BR)DSS RDS(on) MAX ID MAX 1200 V 28 m @ 20 V 103 A Typical Applications • UPS • DC/DC Converter • Boost Inverter N−CHANNEL MOSFET D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 1200 V Gate−to−Source Voltage VGS −15/+25 V VGSop −5/+20 V ID 103 A PD 535 W ID 73 A PD 267 W IDM 412 A TJ, Tstg −55 to +175 °C IS 54 A EAS 264 mJ Parameter Recommended Operation Values of Gate−to− Source Voltage TC < 175°C Continuous Drain Current RJC Steady State TC = 25°C Power Dissipation RJC Steady TC = 100°C State Continuous Drain Current RJC Power Dissipation RJC Pulsed Drain Current (Note 2) TA = 25°C Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 23 A, L = 1 mH) (Note 3) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. G S G D S TO−247−3LD CASE 340CX MARKING DIAGRAM $Y&Z&3&K NTHL020 N120SC1 THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case (Note 1) RJC 0.28 °C/W Junction−to−Ambient (Note 1) RJA 40 °C/W 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Repetitive rating, limited by max junction temperature. 3. EAS of 264 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 23 A, VDD = 120 V, VGS = 18 V. $Y &Z &3 &K NTHL020N120SC1 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 April, 2021 − Rev. 1 1 Publication Order Number: NTHL020N120SC1/D NTHL020N120SC1 ELECTRICAL CHARACTERISTICS Parameter Symbol Test Conditions Min Typ Max Unit Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1 mA 1200 − − V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 1 mA, referenced to 25_C − 900 − mV/_C IDSS VGS = 0 V, VDS = 1200 V, TJ = 25_C − − 100 A VGS = 0 V, VDS = 1200 V, TJ = 175_C − − 250 IGSS VGS = +25/−15 V, VDS = 0 V − − ±1 A Gate Threshold Voltage VGS(th) VGS = VDS, ID = 20 mA 1.8 2.7 4.3 V Recommended Gate Voltage VGOP −5 − +20 V VGS = 20 V, ID = 60 A, TJ = 25_C − 20 28 m VGS = 20 V, ID = 60 A, TJ = 175_C − 35 50 VDS = 10 V, ID = 60 A − 28 − S VGS = 0 V, f = 1 MHz, VDS = 800 V − 2890 − pF OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS Drain−to−Source On Resistance Forward Transconductance RDS(on) gFS CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS − 260 − Reverse Transfer Capacitance CRSS − 22 − Total Gate Charge QG(tot) − 203 − Threshold Gate Charge QG(th) − 33 − Gate−to−Source Charge QGS − 66 − Gate−to−Drain Charge QGD − 47 − Gate Resistance VGS = −5/20 V, VDS = 600 V, ID = 80 A nC RG f = 1 MHz − 1.81 −  td(on) VGS = −5/20 V, VDS = 800 V, ID = 80 A, RG = 2 , Inductive Load − 25 − ns − 57 − td(off) − 45 − tf − 11 − Turn-On Switching Loss EON − 2718 − Turn-Off Switching Loss EOFF − 326 − Total Switching Loss ETOT − 3040 − SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn−Off Delay Time tr Fall Time J DRAIN−SOURCE DIODE CHARACTERISTICS Continuous Drain−to−Source Diode Forward Current ISD VGS = −5 V, TJ = 25_C − − 54 A Pulsed Drain−to−Source Diode Forward Current (Note 2) ISDM VGS = −5 V, TJ = 25_C − − 412 A Forward Diode Voltage VSD VGS = −5 V, ISD = 30 A, TJ = 25_C − 3.7 − V Reverse Recovery Time tRR − 31 − ns Reverse Recovery Charge QRR VGS = −5/20 V, ISD = 80 A, dIS/dt = 1000 A/s − 240 − nC Reverse Recovery Energy EREC − 10 − J Peak Reverse Recovery Current IRRM − 15 − A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NTHL020N120SC1 TYPICAL CHARACTERISTICS 2.5 VGS = 20 V RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE ID, DRAIN CURRENT (A) 250 16 V 200 19 V 150 18 V 17 V 100 50 0 0 4 2 6 8 10 18 V 19 V 1.5 VGS = 20 V 1.0 0.5 0 100 50 200 150 250 ID, DRAIN CURRENT (A) Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 160 RDS(on), ON−RESISTANCE (m) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE ID = 60 A VGS = 20 V 1.7 1.5 1.3 1.1 0.9 0.7 −75 −50 −25 0 25 50 75 ID = 60 A 120 80 100 125 150 175 TJ = 150°C 40 0 TJ = 25°C 5 10 20 15 TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. On−Resistance Variation with Temperature Figure 4. On−Resistance vs. Gate−to−Source Voltage 120 IS, REVERSE DRAIN CURRENT (A) 300 VDS = 20 V ID, DRAIN CURRENT (A) 17 V 2.0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1.9 100 80 60 40 TJ = 25°C TJ = 175°C 20 0 VGS = 16 V TJ = −55°C 2 4 6 8 10 12 14 16 VGS = −5 V TJ = 25°C 30 3 TJ = −55°C TJ = 175°C 1 2 3 4 5 6 7 VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Diode Forward Voltage vs. Current www.onsemi.com 3 8 NTHL020N120SC1 100K 20 VDD = 400 V ID = 80 A VDD = 800 V 15 10 10K CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS VDD = 600 V 5 0 100 50 150 200 1 10 100 Figure 8. Capacitance vs. Drain−to−Source Voltage 800 120 ID, DRAIN CURRENT (A) TJ = 150°C 10 Typical performance based on characterization data 0.001 0.01 0.1 1 100 10 100 80 VGS = 20 V 60 40 20 0 RJC = 0.28°C/W 25 50 75 100 TC, CASE TEMPERATURE (°C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs. Case Temperature 100K 100 10 s This area is limited by RDS(on) 10 Single Pulse TJ = Max Rated RJC = 0.28°C/W TC = 25°C 0.1 150 125 tAV, TIME IN AVALANCHE (ms) P(PK), PEAK TRANSIENT POWER (w) IAS, AVALANCHE CURRENT (A) 0.1 Figure 7. Gate−to−Source Voltage vs. Total Charge 1000 ID, DRAIN CURRENT (A) f = 1 MHz VGS = 0 V VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ = 25°C 0.1 Crss Qg, GATE CHARGE (nC) 100 1 Coss 100 1 250 1000 1 1K 10 0 −5 Ciss 1 100 s 1 ms Curve bent to measured data 10 100 10 ms 100 ms 1K 5K Single Pulse RJC = 0.28°C/W TC = 25°C 10K 1K 100 0.00001 0.0001 0.001 0.01 VDS, DRAIN−TO−SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 4 175 0.1 NTHL020N120SC1 r(t). NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) TYPICAL CHARACTERISTICS 2 1 50% Duty Cycle 20% 10% 0.1 5% 2% 1% 0.01 Notes: ZJC (t) = r(t) x RJC RJC = 0.28°C/W Peak TJ = PDM x ZJC (t) + TC Duty Cycle, D = t1/t2 P DM Single Pulse t1 t2 0.001 0.00001 0.0001 0.001 0.01 0.1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction−to−Ambient Thermal Response PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NTHL020N120SC1 NTHL020N120SC1 TO−247 Long Lead Tube N/A N/A 30 Units www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE A DATE 06 JUL 2020 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG DOCUMENT NUMBER: DESCRIPTION: XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 98AON93302G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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