NTHL025N065SC1

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 19mohm,650V , M2, TO-247-3L NTHL025N065SC1 V(BR)DSS RDS(ON) MAX ID MAX 650 V 28.5 m @ 18 V 99 A D Features G • Typ. RDS(on) = 19 m @ VGS = 18 V • • • • • Typ. RDS(on) = 25 m @ VGS = 15 V Ultra Low Gate Charge (QG(tot) = 164 nC) Low Capacitance (Coss = 278 pF) 100% Avalanche Tested TJ = 175°C This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • • • • G SMPS (Switching Mode Power Supplies) Solar Inverters UPS (Uninterruptable Power Supplies) Energy Storages Symbol MARKING DIAGRAM Value Unit Drain−to−Source Voltage VDSS 650 V Gate−to−Source Voltage VGS −8/+22 V Recommended Operation Values of Gate−to−Source Voltage TC < 175°C VGSop −5/+18 V Continuous Drain Current (Note 1) TC = 25°C ID 99 A PD 348 W ID 70 A PD 174 W IDM 323 A TJ, Tstg −55 to +175 °C IS 75 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 11.2 A, L = 1 mH) (Note 3) EAS 62 mJ Maximum Lead Temperature for Soldering (1/8″ from case for 5 s) TL 260 °C Steady State Power Dissipation (Note 1) Continuous Drain Current (Note 1) Steady State TC = 100°C Power Dissipation (Note 1) Pulsed Drain Current (Note 2) TC = 25°C Operating Junction and Storage Temperature Range Source Current (Body Diode) D TO−247−3LD CASE 340CX MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter S N−CHANNEL MOSFET HL025N 065SC1 AYWWZZ HL025N065SC1 = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Lot Traceability ORDERING INFORMATION Device NTHL025N065SC1 Package TO−247−3LD Shipping 30 Units / Tube Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Repetitive rating, limited by max junction temperature. 3. EAS of 62 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 11.2 A, VDD = 50 V, VGS = 18 V. © Semiconductor Components Industries, LLC, 2021 January, 2023 − Rev. 2 1 Publication Order Number: NTHL025N065SC1/D NTHL025N065SC1 THERMAL RESISTANCE MAXIMUM RATINGS Symbol Max Unit Junction−to−Case − Steady State (Note 1) Parameter RJC 0.43 °C/W Junction−to−Ambient − Steady State (Note 1) RJA 40 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit 650 − − V ID = 20 mA, referenced to 25°C − 0.15 − V/°C VGS = 0 V, VDS = 650 V TJ = 25°C − − 10 A TJ = 175°C − − 1 mA − − 250 nA 1.8 2.8 4.3 V −5 − +18 V VGS = 15 V, ID = 45 A, TJ = 25°C − 25 − m VGS = 18 V, ID = 45 A, TJ = 25°C − 19 28.5 VGS = 18 V, ID = 45 A, TJ = 175°C − 24 − VDS = 10 V, ID = 45 A − 27 − S VGS = 0 V, f = 1 MHz, VDS = 325 V − 3480 − pF OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS IGSS VGS = 0 V, ID = 1 mA VGS = +18/−5 V, VDS = 0 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Recommended Gate Voltage Drain−to−Source On Resistance Forward Transconductance VGS(TH) VGS = VDS, ID = 15.5 mA VGOP RDS(on) gFS CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS − 278 − Reverse Transfer Capacitance CRSS − 25 − − 164 − − 48 − − 48 − f = 1 MHz − 1.5 −  VGS = −5/18 V, VDS = 400 V, ID = 45 A, RG = 2.2  inductive load − 18 − ns − 51 − − 34 − tf − 9 − Turn−On Switching Loss EON − 560 − Turn−Off Switching Loss EOFF − 112 − Etot − 672 − − − 75 − − 323 − 4.7 − Total Gate Charge QG(TOT) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Gate−Resistance RG VGS = −5/18 V, VDS = 520 V, ID = 45 A nC SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Total Switching Loss td(ON) tr td(OFF) J DRAIN−SOURCE DIODE CHARACTERISTICS Continuous Drain−Source Diode Forward Current ISD Pulsed Drain−Source Diode Forward Current (Note 2) ISDM Forward Diode Voltage VSD VGS = −5 V, TJ = 25°C VGS = −5 V, ISD = 45 A, TJ = 25°C www.onsemi.com 2 A V NTHL025N065SC1 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued) Parameter Symbol Test Condition Min Typ Max Unit − 25 − ns − 165 − nC DRAIN−SOURCE DIODE CHARACTERISTICS VGS = −5/18 V, ISD = 45 A, dIS/dt = 1000 A/s Reverse Recovery Time tRR Reverse Recovery Charge QRR Reverse Recovery Energy EREC − 18.8 − J Peak Reverse Recovery Current IRRM − 13 − A Charge Time Ta − 15 − ns Discharge Time Tb − 10.3 − ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NTHL025N065SC1 TYPICAL CHARACTERISTICS 4.0 15 V ID, DRAIN CURRENT (A) VGS = 18 V 12 V 150 100 10 V 7V 9V 50 8V 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE 200 10 20 30 40 50 60 Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 60 RDS(on), ON−RESISTANCE (m) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 0 Figure 1. On−Region Characteristics 1.3 1.2 1.1 1.0 0.9 0.8 0.7 −75 −50 −25 0 25 50 ID = 45 A 50 TJ = 25°C 40 30 TJ = 150°C 20 10 75 100 125 150 175 200 8 9 10 11 12 13 14 15 16 17 TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. On−Resistance Variation with Temperature Figure 4. On−Resistance vs. Gate−to−Source Voltage 18 200 VDS = 10 V IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.0 ID, DRAIN CURRENT (A) 1.4 240 15 V 18 V VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID = 45 A VGS = 18 V 1.5 VGS = 12 V 2.0 0.0 9.0 10.0 1.7 1.6 3.0 180 TJ = 25°C 120 TJ = 175°C TJ = −55°C 60 0 4.00 6.00 8.00 10.00 12.00 14.00 16.00 18.00 100 VGS = −5 V TJ = 175°C TJ = 25°C 10 1 2.0 TJ = −55°C 3.0 4.0 5.0 6.0 7.0 VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Diode Forward Voltage vs. Current www.onsemi.com 4 8.0 NTHL025N065SC1 10000 18 Ciss ID = 45 A 15 VDD = 390 V VDD = 520 V 12 CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS (CONTINUED) VDD = 650 V 9 6 3 0 1000 Coss 100 Crss 10 −3 −6 0 25 50 75 100 125 150 1 0.1 175 f = 1 MHz VGS = 0 V 1 10 100 Qg, GATE CHARGE (nC) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Gate−to−Source Voltage vs. Total Charge Figure 8. Capacitance vs. Drain−to−Source Voltage 650 100 VGS = 18 V 100 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 110 TJ = 25°C 10 90 80 70 60 50 40 30 20 10 1 0.001 0.01 0.1 0 1 RJC = 0.43°C/W 25 tAV, TIME IN AVALANCHE (ms) 125 150 175 30000 Single Pulse RJC = 0.43°C/W TC = 25°C TJ = Max Rated 10 s 100 s 10 10 ms 1 0.1 100 Figure 10. Maximum Continuous Drain Current vs. Case Temperature RDS(on) Limit Thermal Limit Package Limit 0.1 1 ms 100 ms/DC 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 100 75 TC, CASE TEMPERATURE (°C) Figure 9. Unclamped Inductive Switching Capability 1000 50 1000 Single Pulse RJC = 0.43°C/W TC = 25°C 10000 1000 100 1E−05 0.0001 0.001 0.01 0.1 t, PULSE WIDTH (sec) Figure 11. Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 1 NTHL025N065SC1 TYPICAL CHARACTERISTICS (CONTINUED) ZJC(t). EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) 1 0.5 Duty Cycle 0.1 0.2 0.1 0.05 0.02 0.01 0.01 Notes: RJC = 0.43°C/W Duty Cycle, D = t1/t2 P DM Single Pulse t1 t2 0.001 1E−05 0.0001 0.001 0.01 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction−to−Case Thermal Response www.onsemi.com 6 0.1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE A DATE 06 JUL 2020 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG DOCUMENT NUMBER: DESCRIPTION: XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 98AON93302G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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