NTHL027N65S3HF
Power MOSFET, N-Channel,
SUPERFET) III, FRFET),
650 V, 75 A, 27.4 mW
Description
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET is very suitable for the
various power system for miniaturization and higher efficiency.
SUPERFET III FRFET MOSFET’s optimized reverse recovery
performance of body diode can remove additional component and
improve system reliability.
Features
•
•
•
•
•
•
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VDSS
RDS(ON) MAX
ID MAX
650 V
27.4 mW @ 10 V
75 A
D
G
700 V @ TJ = 150°C
Typ. RDS(on) = 23 mW
Ultra Low Gate Charge (Typ. Qg = 225 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 1878 pF)
100% Avalanche Tested
These Devices are Pb−Free and are RoHS Compliant
S
POWER MOSFET
Applications
•
•
•
•
Telecom / Server Power Supplies
Industrial Power Supplies
EV Charger
UPS / Solar
G
D S
TO−247 3LD
CASE 340CX
MARKING DIAGRAM
$Y&Z&3&K
NTHL027
N65S3HF
$Y
= ON Semiconductor Logo
&Z
= Assembly Plant Code
&3
= Data Code (Year & Week)
&K
= Lot
NTHL027N65S3HF = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
February, 2019 − Rev. 1
1
Publication Order Number:
NTHL027N65S3HF/D
NTHL027N65S3HF
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy (Note 2)
IAS
Avalanche Current (Note 2)
EAR
dv/dt
PD
TJ, TSTG
TL
Value
Unit
650
V
− DC
±30
V
− AC (f > 1 Hz)
±30
− Continuous (TC = 25°C)
75
− Continuous (TC = 100°C)
60
− Pulsed (Note 1)
A
187.5
A
1610
mJ
15
A
Repetitive Avalanche Energy (Note 1)
5.95
mJ
MOSFET dv/dt
100
V/ns
Peak Diode Recovery dv/dt (Note 3)
50
Power Dissipation
(TC = 25°C)
595
W
− Derate Above 25°C
4.76
W/°C
−55 to +150
°C
300
°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. IAS = 15 A, RG = 25 W, starting TJ = 25°C.
3. ISD ≤ 37.5 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
RqJC
Thermal Resistance, Junction to Case, Max.
0.21
_C/W
RqJA
Thermal Resistance, Junction to Ambient, Max.
40
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
NTHL027N65S3HF
NTHL027N65S3HF
TO−247
Tube
N/A
N/A
30 Units
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2
NTHL027N65S3HF
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
VGS = 0 V, ID = 1 mA, TJ = 25_C
650
V
VGS = 0 V, ID = 1 mA, TJ = 150_C
700
V
DBVDSS / DTJ
Breakdown Voltage Temperature
Coefficient
ID = 15 mA, Referenced to 25_C
IDSS
Zero Gate Voltage Drain Current
VDS = 650 V, VGS = 0 V
IGSS
Gate to Body Leakage Current
0.61
V/_C
10
mA
±100
nA
5.0
V
27.4
mW
361
VDS = 520 V, TC = 125_C
VGS = ±30 V, VDS = 0 V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 3 mA
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 35 A
23
Forward Transconductance
VDS = 20 V, ID = 37.5 A
56
S
7630
pF
190
pF
gFS
3.0
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 400 V, VGS = 0 V, f = 1 MHz
Coss(eff.)
Effective Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
1878
pF
Coss(er.)
Energy Related Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
352
pF
Total Gate Charge at 10 V
VDS = 400 V, ID = 37.5 A, VGS = 10 V
(Note 4)
225
nC
67
nC
88
nC
f = 1 MHz
1.2
W
VDD = 400 V, ID = 37.5 A, VGS = 10 V
Rg = 2 W
(Note 4)
47
ns
38
ns
Qg(tot)
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
124
ns
Turn-Off Fall Time
32
ns
tf
SOURCE-DRAIN DIODE CHARACTERISTICS
IS
Maximum Continuous Source to Drain Diode Forward Current
ISM
Maximum Pulsed Source to Drain Diode Forward Current
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, ISD = 37.5 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VDD = 400 V, ISD = 37.5 A,
dIF/dt = 100 A/ms
75
A
187.5
A
1.3
V
182
ns
1128
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
NTHL027N65S3HF
TYPICAL PERFORMANCE CHARACTERISTICS
200
300
VDS = 20 V
250 ms Pulse Test
100
ID, Drain Current (A)
ID, Drain Current (A)
VGS = 10.0 V
8.0 V
100
7.0 V
6.5 V
6.0 V
5.5 V
10
150°C
10
25°C
−55°C
1
0.1
250 ms Pulse Test
TC = 25°C
1
10
VDS, Drain−Source Voltage (V)
1
20
2
3
4
5
6
7
VGS, Gate−Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1000
TC = 25°C
IS, Reverse Drain Current (A)
RDS(ON), Drain−Source
On−Resistance (W)
0.04
0.03
VGS = 10 V
VGS = 20 V
0.02
0.01
0
100
−55°C
0.1
0.01
1.0
1.5
0.5
2.0
VSD, Body Diode Forward Voltage (V)
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
10
VGS, Gate−Source Voltage (V)
100000
Capacitances (pF)
25°C
1
1000000
1000
150°C
10
Figure 3. On−Resistance Variation vs.
Drain Current and Gate Voltage
10000
VGS = 0 V
250 ms Pulse Test
0.001
0.0
200
50
100
150
ID, Drain Current (A)
8
Ciss
Coss
100
VGS = 0 V
10 f = 1 MHz
Ciss = Cgs + Cgd (Cds = shorted)
Crss
1 C
oss = Cds + Cgd
Crss = Cgd
0.1 −1
0
1
2
3
10
10
10
10
10
VDS, Drain−Source Voltage (V)
8
VDS = 130 V
VDS = 400 V
6
4
2
0
Figure 5. Capacitance Characteristics
ID = 37.5 A
0
60
120
180
240
Qg, Total Gate Charge (nC)
300
Figure 6. Gate Charge Characteristics
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4
NTHL027N65S3HF
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
3.0
VGS = 0 V
ID = 15 mA
RDS(on), Drain−Source
On−Resistance (Normalized)
BVDSS, Drain−Source
Breakdown Voltage (Normalized)
1.2
1.1
1.0
0.9
0.8
−50
2.5
2.0
1.5
1.0
0.5
0.0
50
100
150
0
TJ, Junction Temperature (5C)
VGS = 10 V
ID = 35 A
−50
0
50
100
150
TJ, Junction Temperature (5C)
Figure 8. On−Resistance Variation
vs. Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
80
500
100
DC
100 ms
1 ms
10 ms
ID, Drain Current (A)
ID, Drain Current (A)
30 ms
10
Operation in this Area
is Limited by RDS(on)
1
0.1
TC = 25°C
TJ = 150°C
Single Pulse
1
10
100
VDS, Drain−Source Voltage (V)
EOSS (mJ)
45
30
15
130
260
390
520
VDS, Drain to Source Voltage (V)
20
50
75
100
125
TC, Case Temperature (5C)
150
Figure 10. Maximum Drain Current
vs. Case Temperature
60
0
40
0
25
1000
Figure 9. Maximum Safe Operating Area
0
60
650
Figure 11. EOSS vs. Drain to Source Voltage
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5
NTHL027N65S3HF
r(t), Normalized Effective Transient
Thermal Resistance
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
2
1
0.1
DUTY CYCLE − DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
0.001
−5
10
ZqJC(t) = r(t) x RqJC
RqJC = 0.21°C/W
Peak TJ = PDM x ZqJC(t) + TC
Duty Cycle, D = t1 / t2
SINGLE PULSE
10
−4
t2
10
−3
−2
−1
10
10
t, Rectangular Pulse Duration (sec)
10
0
Figure 12. Transient Thermal Response Curve
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6
10
1
10
2
NTHL027N65S3HF
VGS
RL
Qg
VDS
VGS
Qgs
Qgd
DUT
IG = Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
RL
VDS
VDS
90%
90%
90%
VDD
VGS
RG
VGS
DUT
VGS
10%
td(on)
10%
tr
td(off)
ton
tf
toff
Figure 14. Resistive Switching Test Circuit & Waveforms
L
E AS + 1 @ LI AS
2
VDS
BVDSS
ID
IAS
RG
VDD
DUT
VGS
2
ID(t)
VDD
VDS(t)
tp
tp
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
Time
NTHL027N65S3HF
+
DUT
VDS
−
ISD
L
Driver
RG
Same Type
as DUT
VGS
− dv/dt controlled by RG
− ISD controlled by pulse period
D+
VGS
(Driver)
VDD
Gate Pulse Width
Gate Pulse Period
10 V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(DUT)
VDD
VSD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET and FRFET are a registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United
States and/or other countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
DOCUMENT NUMBER:
DESCRIPTION:
XXXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
98AON93302G
TO−247−3LD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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