NTHL033N65S3HF

NTHL033N65S3HF MOSFET – Power, N‐Channel, SUPERFET III, FRFET 650 V, 70 A, 33 mW www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. VDSS RDS(ON) MAX ID MAX 650 V 33 mW @ 10 V 70 A D G S Features • • • • • • 700 V @ TJ = 150°C Typ. RDS(on) = 28 mW Ultra Low Gate Charge (Typ. Qg = 188 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 1568 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant Applications • • • • G D S TO−247 long leads CASE 340CX Telecom / Server Power Supplies Industrial Power Supplies EV Charger UPS / Solar MARKING DIAGRAM $Y&Z&3&K NTHL033 N65S3HF $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot NTHL033N65S3HF = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 May, 2019 − Rev. 1 1 Publication Order Number: NTHL033N65S3HF/D NTHL033N65S3HF ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy (Note 2) IAS Value Unit 650 V − DC ±30 V − AC (f > 1 Hz) ±30 − Continuous (TC = 25°C) 70 − Continuous (TC = 100°C) 53 175 A 1250 mJ Avalanche Current (Note 2) 12 A EAR Repetitive Avalanche Energy (Note 1) 5.0 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 PD − Pulsed (Note 1) A Power Dissipation TJ, TSTG TL (TC = 25°C) 500 W − Derate Above 25°C 4.0 W/°C −55 to +150 °C 300 °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 12 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 35 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter RqJC Thermal Resistance, Junction to Case, Max. RqJA Thermal Resistance, Junction to Ambient, Max. Value Unit 0.25 _C/W 40 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NTHL033N65S3HF NTHL033N65S3HF TO−247 Tube N/A N/A 30 Units www.onsemi.com 2 NTHL033N65S3HF ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit VGS = 0 V, ID = 1 mA, TJ = 25_C 650 V VGS = 0 V, ID = 1 mA, TJ = 150_C 700 V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS/DTJ Breakdown Voltage Temperature Coefficient ID = 15 mA, Referenced to 25_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V IGSS Gate to Body Leakage Current 0.63 V/_C 10 mA ±100 nA 5.0 V 33 mW 263 VDS = 520 V, TC = 125_C VGS = ±30 V, VDS = 0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 35 A 28 Forward Transconductance VDS = 20 V, ID = 35 A 49 S 6720 pF 159 pF gFS VGS = VDS, ID = 2.5 mA 3.0 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 1568 pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 292 pF Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance 188 nC VDS = 400 V, ID = 35 A, VGS = 10 V (Note 4) 55 nC 73 nC f = 1 MHz 1.1 W 43 ns 35 ns 110 ns 28 ns SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf VDD = 400 V, ID = 35 A, VGS = 10 V, Rg = 2.2 W (Note 4) Turn-Off Fall Time SOURCE-DRAIN DIODE CHARACTERISTICS Maximum Continuous Source to Drain Diode Forward Current 70 A ISM Maximum Pulsed Source to Drain Diode Forward Current 175 A VSD Source to Drain Diode Forward Voltage 1.3 V IS trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, ISD = 35 A VDD = 400 V, ISD = 35 A, dIF/dt = 100 A/ms 173 ns 1003 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 NTHL033N65S3HF TYPICAL CHARACTERISTICS 200 VDS = 20 V 250 ms Pulse Test 100 ID, Drain Current[A] 100 ID, Drain Current[A] 300 VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 o 150 C 10 o 25 C o −55 C 250ms Pulse Test o TC = 25 C 1 0.1 1 1 10 VDS, Drain−Source Voltage[V] 20 2 3 4 5 6 VGS, Gate-Source Voltage[V] Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 1000 o TC = 25 C IS, Reverse Drain Current [A] RDS(ON), Drain−Source On−Resistance [ W ] 0.04 VGS = 10 V 0.03 7 VGS = 20 V 0.02 100 VGS = 0 V 250 ms Pulse Test 10 o 150 C 1 o 25 C 0.1 o −55 C 0.01 0.01 0 50 100 150 0.001 200 ID, Drain Current [A] Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage 10 Capacitances [pF] 1000 VGS, Gate−Source Voltage [V] Ciss 10000 Coss 100 1 VGS = 0 V f = 1 MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Crss 0.1 0.1 1 10 100 VDS, Drain-Source Voltage [V] 0.5 1.0 1.5 VSD , Body Diode Forward Voltage [V] 2.0 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100000 10 0.0 8 Figure 5. Capacitance Characteristics VDS = 130 V VDS = 400 V 6 4 2 0 1000 ID = 35 A 0 50 100 150 Qg, Total Gate Charge [nC] 200 Figure 6. Gate Charge Characteristics www.onsemi.com 4 NTHL033N65S3HF TYPICAL CHARACTERISTICS 1.2 2.5 RDS(on), [Normalized] Drain−Source On−Resistance BVDSS, [Normalized] Drain−Source Breakdown Voltage VGS = 0 V ID = 15 mA 1.1 1.0 0.9 0.8 −50 0 50 100 VGS = 10 V ID = 35 A 2.0 1.5 1.0 0.5 0.0 150 −50 o TJ, Junction Temperature [ C] 70 30ms 100 ms ID, Drain Current [A] ID, Drain Current [A] 150 80 100 1ms 10 10ms Operation in This Area is Limited by R DS(on) 1 DC o T C = 25 C o 1 10 100 VDS, Drain−Source Voltage [V] 60 50 40 30 20 10 TJ = 150 C Single Pulse 0 25 1000 Figure 9. Maximum Safe Operating Area 40 30 20 10 0 130 260 390 520 VDS, Drain to Source Voltage [V] 50 75 100 o 125 TC, Case Temperature [ C] 150 Figure 10. Maximum Drain Current vs. Case Temperature 50 EOSS [ mJ] 100 Figure 8. On−Resistance Variation vs. Temperature 500 0 50 o Figure 7. Breakdown Voltage Variation vs. Temperature 0.1 0 TJ, Junction Temperature [ C] 650 Figure 11. Eoss vs. Drain−to−Source Voltage www.onsemi.com 5 NTHL033N65S3HF r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL CHARACTERISTICS 2 DUTY CYCLE−DESCENDING ORDER 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM t1 t2 0.01 ZqJC(t) = r(t) x RqJC RqJC = 0.25 oC/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 −5 10 −4 10 −3 10 −2 −1 10 10 Figure 12. Transient Thermal Response Curve www.onsemi.com 6 0 10 t, RECTANGULAR PULSE DURATION (sec) 1 10 2 10 NTHL033N65S3HF VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time NTHL033N65S3HF + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VSD VDD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC. FRFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE A DATE 06 JUL 2020 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG DOCUMENT NUMBER: DESCRIPTION: XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 98AON93302G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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