NTHL041N60S5H

DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel, SUPERFET) V, FAST, TO247-3L VDSS RDS(ON) MAX ID MAX 600 V 41 mW @ 10 V 57 A D 600 V, 41 mW, 57 A NTHL041N60S5H Description G The SUPERFET V MOSFET FAST series helps maximize system efficiency by the extremely low switching losses in hard switching application. S Features • • • • 650 V @ TJ = 150°C Typ. RDS(on) = 32.8 mW 100% Avalanche Tested Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications G • Telecom / Server Power Supplies • EV Charger / UPS / Solar / Industrial Power Supplies Parameter Gate−to−Source Voltage DC Symbol Value Unit VDSS 600 V VGSS ±30 V AC (f > 1 Hz) Continuous Drain Current TC = 25°C S TO−247 Long Leads CASE 340CX ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, Unless otherwise noted) Drain−to−Source Voltage D MARKING DIAGRAM ±30 ID TC = 100°C A 57 T041N 60S5H AYWWZZ 36 Power Dissipation TC = 25°C PD 329 W Pulsed Drain Current (Note 1) TC = 25°C IDM 200 A Pulsed Source Current (Body Diode) (Note 1) TC = 25°C ISM 200 A TJ, TSTG −55 to +150 °C IS 57 A EAS 560 mJ Avalanche Current IAS 8 A Repetitive Avalanche Energy (Note 1) EAR 3.29 mJ Device Package Shipping MOSFET dv/dt dv/dt 120 V/ns NTHL041N60S5H TO−247 30 Units / Tube Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Avalanche Energy IL = 8 A, RG = 25 W Peak Diode Recovery dv/dt (Note 2) Lead Temperature for Soldering Purposes (1/8″ from case for 10 seconds) T041N60S5H A YWW ZZ = Specific Device Code = Assembly Location = Data Code (Year & Week) = Assembly Lot ORDERING INFORMATION 20 TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. ISD ≤ 28.5 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. © Semiconductor Components Industries, LLC, 2021 August, 2021 − Rev. 2 1 Publication Order Number: NTHL041N60S5H/D NTHL041N60S5H THERMAL CHARACTERISTICS Parameter Symbol Value Unit Thermal Resistance, Junction−to−Case, Max. RqJC 0.38 °C/W Thermal Resistance, Junction−to−Ambient, Max. RqJA 40 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1 mA, TJ = 25_C 600 − − V Drain−to−Source Breakdown Voltage Temperature Coefficient DV(BR)DSS/ DTJ ID = 10 mA, Referenced to 25_C − 630 − mV/_C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 600 V, TJ = 25_C − − 2 mA Gate−to−Source Leakage Current IGSS VGS = ±30 V, VDS = 0 V − − ±100 nA Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 28.5 A, TJ = 25_C − 32.8 41 mW Gate Threshold Voltage VGS(th) VGS = VDS, ID = 6.7 mA, TJ = 25_C 2.7 − 4.3 V gFS VDS = 20 V, ID = 28.5 A − 66 − S VDS = 400 V, VGS = 0 V, f = 250 kHz − 5840 − pF OFF CHARACTERISTICS ON CHARACTERISTICS Forward Trans−conductance CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance CISS − 92 − Time Related Output Capacitance COSS(tr.) ID = Constant, VDS = 0 V to 400 V, VGS = 0 V − 1451 − Energy Related Output Capacitance COSS(er.) VDS = 0 V to 400 V, VGS = 0 V − 155 − QG(tot) VDD = 400 V, ID = 28.5 A, VGS = 10 V Total Gate Charge COSS − 108 − Gate−to−Source Charge QGS − 28 − Gate−to−Drain Charge QGD − 29 − Gate Resistance nC RG f = 1 MHz − 0.6 − W td(on) VGS = 0/10 V, VDD = 400 V, ID = 28.5 A, RG = 2.2 W − 33 − ns SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time − 11 − td(off) tr − 81 − tf − 2 − SOURCE-TO−DRAIN DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, ISD = 28.5 A, TJ = 25_C − − 1.2 V Reverse Recovery Time tRR − 461 − ns Reverse Recovery Charge QRR VGS = 0 V, ISD = 28.5 A, dI/dt = 100 A/ms, VDD = 400 V − 9566 − nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NTHL041N60S5H TYPICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 7.0 V 80 60 5.0 V 40 4.5 V 20 4.0 V 0 5 0.08 15 10 20 VGS = 20 V 0.02 0.01 20 40 6 60 80 100 100 TC = 25°C 10 1 0.1 120 TC = 150°C 0 TC = −55°C 0.4 0.2 0.6 0.8 1.0 ID, DRAIN CURRENT (A) VSD, DIODE FORWARD VOLTAGE (V) Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Diode Forward Voltage vs. Source Current VGS = 0 V f = 250 kHz CISS = CGS + CGD (CDS = shorted) COSS = CDS + CGD CRSS = CGD CISS 104 103 COSS 102 CRSS 101 100 0 5 VGS = 0 V 0.03 10−1 4 3 1000 VGS = 10 V 105 2 TC = −55°C Figure 2. Transfer Characteristics 0.04 106 TC = 150°C Figure 1. On−Region Characteristics 0.05 0 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.06 0 TC = 25°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) TC = 25°C 0.07 100 1 IS, SOURCE CURRENT (A) RDS(on), DRAIN−TO−SOURCE ON−RESISTANCE (W) VDS = 20 V TC = 25°C 100 0 CAPACITANCE (pF) 1000 6.0 V VGS = 10 V 100 200 300 400 500 600 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) 120 10 ID = 28.5 A VDS = 130 V 8 VDS = 400 V 6 4 2 0 0 20 40 60 80 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 3 1.2 120 NTHL041N60S5H 1.2 3.0 VGS = 0 V ID = 10 mA RDS(on), DRAIN−TO−SOURCE ON−RESISTANCE (Normalized) BVDSS, DRAIN−TO−SOURCE BREAKDOWN VOLTAGE (Normalized) TYPICAL CHARACTERISTICS 1.1 1.0 0.9 0.8 −75 −50 −25 0 25 50 75 1.5 1.0 0.5 50 75 100 125 150 175 Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On−Resistance Variation vs. Temperature 60 10 ms 100 ms 10 1 ms Operation in this Area is Limited by RDS(on) 1 10 ms TC = 25°C TJ = 150°C Single Pulse DC 40 30 20 10 0 10 1 50 100 1000 25 75 100 125 TC, CASE TEMPERATURE (°C) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 20 15 10 5 0 50 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 25 EOSS (mJ) 25 TJ, JUNCTION TEMPERATURE (°C) 100 0 0 TJ, JUNCTION TEMPERATURE (°C) ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 2.0 0 −75 −50 −25 100 125 150 175 1000 0.1 VGS = 10 V ID = 28.5 A 2.5 100 200 300 400 500 600 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. EOSS vs. Drain−to−Source Voltage www.onsemi.com 4 150 NTHL041N60S5H TYPICAL CHARACTERISTICS ZqJC(t), EFFECTIVE TRANSIENT THERMAL IMPEDANCE (°C/W) 1 D = 0.5 0.1 D = 0.2 D = 0.1 D = 0.05 D = 0.02 0.01 0.001 Notes: ZqJC(t) = 0.38°C/W Max Duty Cycle, D = t1/t2 TJM = PDM x ZqJC(t) + TC D = 0.01 Single Pulse 0.00001 0.0001 0.001 0.01 t, RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Impedance www.onsemi.com 5 0.1 1 NTHL041N60S5H VGS RL Qg VDD VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 Time NTHL041N60S5H + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC or its subsidiaries in the United States and/or other countries. www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE A DATE 06 JUL 2020 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG DOCUMENT NUMBER: DESCRIPTION: XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 98AON93302G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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