MOSFET - SiC Power, Single
N-Channel
900 V, 60 mW, 46 A
NTHL060N090SC1
Features
•
•
•
•
•
•
Typ. RDS(on) = 60 mW @ VGS = 15 V
Typ. RDS(on) = 43 mW @ VGS = 18 V
Ultra Low Gate Charge (typ. QG(tot) = 87 nC)
Low Effective Output Capacitance (typ. Coss = 113 pF)
100% UIL Tested
These Devices are RoHS Compliant
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V(BR)DSS
RDS(on) MAX
ID MAX
900 V
84 mW @ 15 V
46 A
Typical Applications
N−CHANNEL MOSFET
• UPS
• DC/DC Converter
• Boost Inverter
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
900
V
Gate−to−Source Voltage
VGS
+22/−8
V
Recommended Operation Values of Gate−to−
Source Voltage
VGSop
+15/−5
V
ID
46
A
PD
221
W
ID
32
A
PD
110
W
IDM
184
A
TJ, Tstg
−55 to
+175
°C
IS
22
A
EAS
162
mJ
Parameter
Continuous Drain
Current RqJC
Power Dissipation RqJC
Continuous Drain
Current RqJC
Power Dissipation RqJC
TC < 175°C
Steady
State
S
TC = 25°C
Steady
TC = 100°C
State
Pulsed Drain Current
(Note 2)
G
TA = 25°C
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 18 A, L = 1 mH) (Note 3)
G
D
S
TO−247−3LD
CASE 340CX
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
$Y&Z&3&K
NTHL060
N090SC1
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case (Note 1)
RqJC
0.68
°C/W
Junction−to−Ambient (Note 1)
RqJA
40
°C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. EAS of 162 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 18 A, VDD =
100 V, VGS = 15 V.
© Semiconductor Components Industries, LLC, 2018
April, 2021 − Rev. 3
1
$Y
&Z
&3
&K
NTHL060N090SC1
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Publication Order Number:
NTHL060N090SC1/D
NTHL060N090SC1
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 1 mA
900
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
ID = 1 mA, referenced to 25_C
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
IGSS
Gate Threshold Voltage
VGS(th)
VGS = VDS, ID = 5 mA
Recommended Gate Voltage
VGOP
V
574
mV/_C
mA
VGS = 0 V, VDS = 900 V, TJ = 25_C
100
VGS = 0 V, VDS = 900 V, TJ = 175_C
250
VGS = +22/−8 V, VDS = 0 V
±1
mA
ON CHARACTERISTICS
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
gFS
1.8
2.7
−5
VGS = 15 V, ID = 20 A, TJ = 25_C
60
4.3
V
+15
V
84
mW
VGS = 18 V, ID = 20 A, TJ = 25_C
43
VGS = 15 V, ID = 20 A, TJ = 175_C
76
VDS = 20 V, ID = 20 A
17
S
1770
pF
135
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
11
Total Gate Charge
QG(tot)
87
Threshold Gate Charge
QG(th)
17
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Gate Resistance
VGS = 0 V, f = 1 MHz, VDS = 450 V
VGS = −5/15 V, VDS = 720 V, ID = 10 A
113
nC
27
26
RG
f = 1 MHz
3.0
W
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(on)
22
40
tr
33
66
31
74
11
20
Rise Time
Turn−Off Delay Time
td(off)
Fall Time
tf
VGS = −5/15 V, VDS = 720 V,
ID = 20 A, RG = 2.5 W,
Inductive Load
Turn-On Switching Loss
EON
Turn-Off Switching Loss
EOFF
23
Total Switching Loss
ETOT
487
ns
mJ
464
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−to−Source Diode
Forward Current
ISD
Pulsed Drain−to−Source Diode Forward Current (Note 2)
ISDM
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
VGS = −5 V, TJ = 25_C
VGS = −5 V, TJ = 25_C
VGS = −5 V, ISD = 10 A, TJ = 25_C
22
A
184
A
3.9
V
18
ns
Reverse Recovery Charge
QRR
84
nC
Reverse Recovery Energy
EREC
1.0
mJ
Peak Reverse Recovery Current
IRRM
VGS = −5/15 V, ISD = 30 A,
dIS/dt = 1000 A/ms, VDS = 720 V
9.0
A
Charge Time
ta
10
ns
Discharge Time
tb
8.0
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NTHL060N090SC1
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
Figure 3. On−Resistance Variation with
Temperature
Figure 4. On−Resistance vs. Gate−to−Source
Voltage
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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3
NTHL060N090SC1
TYPICAL CHARACTERISTICS
Figure 7. Gate−to−Source Voltage vs. Total
Charge
Figure 8. Capacitance vs. Drain−to−Source
Voltage
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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4
NTHL060N090SC1
TYPICAL CHARACTERISTICS
Figure 13. Junction−to−Ambient Thermal Response
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
NTHL060N090SC1
NTHL060N090SC1
TO−247
Long Lead
Tube
N/A
N/A
30 Units
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
DOCUMENT NUMBER:
DESCRIPTION:
XXXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
98AON93302G
TO−247−3LD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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