MOSFET – Power, N-Channel,
SUPERFET III, FRFET
650 V, 46 A, 65 mW
NTHL065N65S3HF
Description
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET is very suitable for the
various power system for miniaturization and higher efficiency.
SUPERFET III FRFET MOSFET’s optimized reverse recovery
performance of body diode can remove additional component and
improve system reliability.
www.onsemi.com
VDSS
RDS(on) MAX
ID MAX
650 V
65 mΩ @ 10 V
46 A
D
G
Features
•
•
•
•
•
•
700 V @ TJ = 150°C
Typ. RDS(on) = 54 mW
Ultra Low Gate Charge (Typ. Qg = 98 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 876 pF)
100% Avalanche Tested
This Device is Pb−Free and is RoHS Compliant
G D
S
Applications
•
•
•
•
S
TO−247−3LD
CASE 340CX
Telecom / Server Power Supplies
Industrial Power Supplies
EV Charger
USP / Solar
MARKING DIAGRAM
$Y&Z&3&K
NTHL065
N65S3HF
$Y
= ON Semiconductor Logo
&Z
= Assembly Plant Code
&3
= Numeric Date Code
&K
= Lot Code
NTHL065N65S3HF = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
November, 2020 − Rev. 1
1
Publication Order Number:
NTHL065N65S3HF/D
NTHL065N65S3HF
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
Drain Current
ID
Value
Unit
650
V
DC
±30
V
AC (f > 1 Hz)
±30
Continuous (TC = 25°C)
46
Continuous (TC = 100°C)
30
Pulsed (Note 1)
115
A
A
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy (Note 2)
635
mJ
IAS
Avalanche Current (Note 2)
5.3
A
EAR
Repetitive Avalanche Energy (Note 1)
3.37
mJ
dv/dt
MOSFET dv/dt
100
V/ns
Peak Diode Recovery dv/dt (Note 3)
50
Power Dissipation
TC = 25°C
337
W
Derate Above 25°C
2.7
W/°C
−55 to +150
°C
300
°C
PD
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
TL
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. IAS = 5.3 A, RG = 25 W, starting TJ = 25°C.
3. ISD ≤ 23 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
Thermal Resistance, Junction to Case, Max.
RqJA
Thermal Resistance, Junction to Ambient, Max.
Value
Unit
0.37
_C/W
40
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
NTHL065N65S3HF
NTHL065N65S3HF
TO−247
Tube
N/A
N/A
30 Units
www.onsemi.com
2
NTHL065N65S3HF
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VGS = 0 V, ID = 1 mA, TJ = 25°C
650
−
−
V
VGS = 0 V, ID = 1 mA, TJ = 150°C
700
−
−
V
ID = 15 mA, Referenced to 25°C
−
0.63
−
V/°C
VDS = 650 V, VGS = 0 V
−
−
10
mA
VDS = 520 V, TC = 125°C
−
153
−
VGS = ±30 V, VDS = 0 V
−
−
±100
nA
3.0
−
5.0
V
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
DBVDSS / DTJ Breakdown Voltage Temperature Coefficient
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 1.3 mA
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 23 A
−
54
65
mW
Forward Transconductance
VDS = 20 V, ID = 23 A
−
31
−
S
VDS = 400 V, VGS = 0 V, f = 1 MHz
−
4075
−
pF
−
95
−
pF
gFS
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Coss(eff.)
Effective Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
−
876
−
pF
Coss(er.)
Energy Related Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
−
160
−
pF
Total Gate Charge at 10V
VDS = 400 V, ID = 23 A, VGS = 10 V
(Note 4)
−
98
−
nC
−
30
−
nC
−
38
−
nC
f = 1 MHz
−
1.5
−
W
VDD = 400 V, ID = 23 A,
VGS = 10 V, Rg = 2.7 Ω
(Note 4)
−
33
−
ns
−
24
−
ns
Qg(tot)
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance
SWITCHING CHARACTERISTICS
td(on)
Turn−On Delay Time
tr
Turn−On Rise Time
td(off)
Turn−Off Delay Time
−
79
−
ns
Turn−Off Fall Time
−
14
−
ns
tf
SOURCE−DRAIN DIODE CHARACTERISTICS
IS
Maximum Continuous Source to Drain Diode Forward Current
−
−
46
A
ISM
Maximum Pulsed Source to Drain Diode Forward Current
−
−
115
A
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, ISD = 23 A
−
−
1.3
V
trr
Reverse Recovery Time
−
116
−
ns
Qrr
Reverse Recovery Charge
VDD = 400 V, ISD = 23 A,
dIF/dt = 100 A/ms
−
488
−
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
www.onsemi.com
3
NTHL065N65S3HF
TYPICAL PERFORMANCE CHARACTERISTICS
200
10
1
150°C
10
Notes:
1. 250 ms Pulse Test
2. TC = 25°C
1
1
10
2
20
4
6
8
10
VDS, Drain−Source Voltage [V]
VGS, Gate−Source Voltage [V]
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.08
1000
Note: TC = 25°C
IS, Reverse Drain Current [A]
RDS(ON),
Drain−Source On−Resistance [W]
25°C
−55°C
0.1
0.2
Notes:
1. VDS = 20 V
2. 250 ms Pulse Test
100
ID Drain Current [A]
ID Drain Current [A]
300
VGS = 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
100
0.07
VGS = 10 V
0.06
VGS = 20 V
0.05
0.04
0
20
40
60
80
100
Notes:
1. VGS = 0 V
2. 250 ms Pulse Test
100
10
150°C
1
25°C
0.1
−55°C
0.01
0.001
120
0.0
ID, Drain Current [A]
0.5
1.0
1.5
2.0
VSD, Body Diode Forward Voltage [V]
Figure 3. On−Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
10
100000
Capacitance [pF]
VGS, Gate−Source Voltage [V]
Note: ID = 23 A
Ciss
10000
1000
Coss
100
10
1
0.1
Notes:
1. VGS = 0 V
2. f = 1 MHz
ciss = cgs + cgd (cds = shorted)
coss = cds + cgd
crss = cgd
0.1
1
10
Crss
100
8
VDS = 400 V
6
4
2
0
1000
VDS = 130 V
0
20
40
60
80
100
VDS, Drain−Source Voltage [V]
Qg, Total Gate Charge [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
www.onsemi.com
4
NTHL065N65S3HF
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
2.5
Notes:
1. VGS = 0 V
2. ID = 15 mA
1.1
RDS(ON), [Normalized]
Drain−Source On−Resistance
BVDSS, [Normalized]
Drain−Source Breakdown Voltage
1.2
1.0
0.9
Notes:
1. VGS = 10 V
2. ID = 23 A
2.0
1.5
1.0
0.5
0.0
0.8
−50
0
50
100
150
−50
TJ, Junction Temperature [5C]
100
150
Figure 8. On−Resistance Variation vs.
Temperature
50
500
30 ms
40
ID, Drain Current [A]
100
ID, Drain Current [A]
50
TJ, Junction Temperature [5C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
100 ms
1 ms
10
Operation in This Area
is Limited by RDS(on)
10 ms
DC
Notes:
1. TC = 25°C
2. TJ = 150°C
3. Single Pulse
1
1
30
20
10
0
0.1
10
100
25
1000
50
75
100
125
150
VDS, Drain−Source Voltage
TC, Case Temperature [5C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs.
Case Temperature
25
20
EOSS [mJ]
0
15
10
5
0
0
130
260
390
520
650
VDS, Drain to Source Voltage
Figure 11. Eoss vs. Drain to Source Voltage
www.onsemi.com
5
NTHL065N65S3HF
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
r(t), Normalized Effective Transient
Thermal Resistance
2
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
PDM
t1
t2
Notes:
ZqJC(t) = r(t) × RqJC
RqJC = 0.37°C/W
Peak TJ = PDM × ZqJC(t) + TC
Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001
−5
10
−4
10
−3
10
−2
−1
10
10
10
0
t, Rectangular Pulse Duration (sec)
Figure 12. Transient Thermal Response Curve
www.onsemi.com
6
10
1
10
2
NTHL065N65S3HF
VGS
RL
Qg
VDS
VGS
Qgs
Qgd
DUT
IG = Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
RL
VDS
VDS
90%
90%
90%
VDD
VGS
RG
VGS
DUT
VGS
10%
td(on)
10%
tr
tf
td(off)
ton
toff
Figure 14. Resistive Switching Test Circuit & Waveforms
L
E AS + 1 @ LI AS
2
VDS
BVDSS
ID
IAS
RG
VDD
DUT
VGS
2
ID(t)
VDD
VDS(t)
tp
tp
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
www.onsemi.com
7
Time
NTHL065N65S3HF
+
DUT
VSD
−
ISD
L
Driver
RG
Same Type
as DUT
VGS
− dv/dt controlled by RG
− ISD controlled by pulse period
D+
VGS
(Driver)
VDD
Gate Pulse Width
Gate Pulse Period
10 V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(DUT)
VDD
VSD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET and FREFT are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United
States and/or other countries.
www.onsemi.com
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
DOCUMENT NUMBER:
DESCRIPTION:
XXXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
98AON93302G
TO−247−3LD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative