NTHL095N65S3H

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MOSFET – Power, N-Channel, SUPERFET) III, FAST 650 V, 95 mW, 30 A NTHL095N65S3H www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET FAST series helps minimize various power systems and improve system efficiency. VDSS RDS(ON) MAX ID MAX 650 V 95 mW @ 10 V 30 A D Features • • • • • • 700 V @ TJ = 150°C Typ. RDS(on) = 77 mW Ultra Low Gate Charge (Typ. Qg = 58 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 522 pF) 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant G S Applications • Telecom / Server Power Supplies • Industrial Power Supplies • UPS / Solar G D S TO−247 Long Leads CASE 340CX MARKING DIAGRAM T095N 65S3H AYWWZZ T095N65S3H A YWW ZZ = Specific Device Code = Assembly Plant Code = Data Code (Year & Week) = Lot ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 March, 2021 − Rev. 3 1 Publication Order Number: NTHL095N65S3H/D NTHL095N65S3H ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V − DC ±30 V − AC (f > 1 Hz) ±30 − Continuous (TC = 25°C) 30 − Continuous (TC = 100°C) 18 IDM Drain Current 84 A EAS Single Pulsed Avalanche Energy (Note 2) 284 mJ IAS Avalanche Current (Note 2) 5.5 A EAR Repetitive Avalanche Energy (Note 1) 2.08 mJ dv/dt MOSFET dv/dt 120 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD TJ, TSTG TL − Pulsed (Note 1) A Power Dissipation (TC = 25°C) 208 W − Derate Above 25°C 1.67 W/°C −55 to +150 °C 260 °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 5.5 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 15 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit RqJC Thermal Resistance, Junction to Case, Max. 0.60 _C/W RqJA Thermal Resistance, Junction to Ambient, Max. 40 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NTHL095N65S3H T095N65S3H TO−247 (Pb−Free / Halogen Free) Tube N/A N/A 30 Units www.onsemi.com 2 NTHL095N65S3H ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit VGS = 0 V, ID = 1 mA, TJ = 25_C 650 − − V VGS = 0 V, ID = 1 mA, TJ = 150_C 700 − − V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS/DTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25_C − 0.63 − V/_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V − − 1 mA VDS = 520 V, TC = 125_C − 1.8 − IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V − − ±100 nA VGS = VDS, ID = 2.8 mA 2.4 − 4.0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 15 A − 77 95 mW Forward Transconductance VDS = 20 V, ID = 15 A − 30 − S VDS = 400 V, VGS = 0 V, f = 250 kHz − 2833 − pF − 43 − pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 522 − pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 75 − pF VDS = 400 V, ID = 15 A, VGS = 10 V (Note 4) − 58 − nC − 14 − nC Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance − 15 − nC f = 1 MHz − 1.2 − W VDD = 400 V, ID = 15 A, VGS = 10 V, Rg = 4.7 W (Note 4) − 24 − ns − 7.4 − ns SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time − 69 − ns Turn-Off Fall Time − 2.4 − ns Maximum Continuous Source to Drain Diode Forward Current − − 30 A ISM Maximum Pulsed Source to Drain Diode Forward Current − − 84 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 15 A − − 1.2 V VDD = 400 V, ISD = 15 A, dIF/dt = 100 A/ms − 367 − ns − 6.3 − mC tf SOURCE-DRAIN DIODE CHARACTERISTICS IS trr Reverse Recovery Time Qrr Reverse Recovery Charge Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 NTHL095N65S3H TYPICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) 6.0 V ID, DRAIN CURRENT (A) 5.0 V 40 30 4.5 V 20 10 250 ms Pulse Test VDS = 20 V 10 TJ = 25°C VGS = 4.0 V 5 0 0.20 10 1 20 15 100 IS, REVERSE DRAIN CURRENT (A) VGS = 10 V VGS = 20 V 0.05 40 20 60 80 100 10 1 0.1 TJ = 150°C 0 0.2 TJ = 25°C 0.4 0.6 TJ = −55°C 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS = 0 V f = 250 KHz Ciss 103 102 Coss 101 Crss 100 0 VGS = 0 V 250 ms Pulse Test ID, DRAIN CURRENT (A) 104 10−1 6 Figure 2. Transfer Characteristics 0.10 105 5 4 Figure 1. On−Region Characteristics TC = 25°C 0 3 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.15 0 TJ = −55°C TJ = 150°C 2 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 106 CAPACITANCE (pF) 100 250 ms Pulse Test TC = 25°C 7.0 V 50 0 RDS(on), DRAIN−SOURCE ON−RESISTANCE 10 V VGS, GATE−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) 60 100 200 300 400 500 600 10 VDS = 130 V ID = 15 A 8 VDS = 400 V 6 4 2 0 0 10 20 30 40 50 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 4 60 NTHL095N65S3H TYPICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) 1.2 3.0 RDS(ON), NORMALIZED DRAIN− SOURCE ON−RESISTANCE BVDSS, NORMALIZED DRAIN−TO− SOURCE BREAKDOWN VOLTAGE VGS = 0 V ID = 10 mA 1.1 1.0 0.9 0.8 −75 −50 −25 0 25 50 75 1.5 1.0 0.5 50 75 100 125 150 175 Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On−Resistance Variation vs. Temperature 40 10 100 ms Operation in this Area is Limited by RDS(on) 1 1 ms 10 ms TC = 25°C TJ = 150°C Single Pulse 1 20 10 DC 100 10 30 1000 0 25 75 100 125 TC, CASE TEMPERATURE (°C) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 8 6 4 2 0 50 VDS, DRAIN−SOURCE VOLTAGE (V) 10 EOSS (mJ) 25 TJ, JUNCTION TEMPERATURE (°C) 10 ms 0 0 TJ, JUNCTION TEMPERATURE (°C) ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 2.0 0 −75 −50 −25 100 125 150 175 100 0.1 VGS = 10 V ID = 15 A 2.5 100 200 300 400 500 600 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. EOSS vs. Drain to Source Voltage www.onsemi.com 5 150 NTHL095N65S3H TYPICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 P DM 0.01 Single Pulse t1 t2 0.01 0.00001 0.0001 0.001 0.01 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Impedance www.onsemi.com 6 ZqJC(t) = r(t) x RqJC RqJC = 0.60°C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1/t2 0.1 1 NTHL095N65S3H VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time NTHL095N65S3H + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC. FRFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 NTHL095N65S3H PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE A www.onsemi.com 9 NTHL095N65S3H ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 www.onsemi.com 10 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative