NTHL125N65S3H

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MOSFET – Power, N-Channel, SUPERFET) III, FAST 650 V, 125 mW, 24 A NTHL125N65S3H www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET FAST series helps minimize various power systems and improve system efficiency. VDSS RDS(ON) MAX ID MAX 650 V 125 mW @ 10 V 24 A D Features • • • • • • 700 V @ TJ = 150°C Typ. RDS(on) = 108 mW Ultra Low Gate Charge (Typ. Qg = 44 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 379 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant G S Applications • Telecom / Server Power Supplies • Industrial Power Supplies • UPS / Solar G D S TO−247 Long Leads CASE 340CX MARKING DIAGRAM T125N 65S3H AYWWZZ T125N65S3H A YWW ZZ = Specific Device Code = Assembly Plant Code = Data Code (Year & Week) = Lot ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 September, 2020 − Rev. 0 1 Publication Order Number: NTHL125N65S3H/D NTHL125N65S3H ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V − DC ±30 V − AC (f > 1 Hz) ±30 − Continuous (TC = 25°C) 24 − Continuous (TC = 100°C) 15 IDM Drain Current 67 A EAS Single Pulsed Avalanche Energy (Note 2) 216 mJ IAS Avalanche Current (Note 2) 4.7 A EAR Repetitive Avalanche Energy (Note 1) 1.71 mJ dv/dt MOSFET dv/dt 120 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD TJ, TSTG TL − Pulsed (Note 1) A Power Dissipation (TC = 25°C) 171 W − Derate Above 25°C 1.37 W/°C −55 to +150 °C 260 °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 4.7 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 12 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit RqJC Thermal Resistance, Junction to Case, Max. 0.73 _C/W RqJA Thermal Resistance, Junction to Ambient, Max. 40 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NTHL125N65S3H T125N65S3H TO−247 Tube N/A N/A 30 Units www.onsemi.com 2 NTHL125N65S3H ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit VGS = 0 V, ID = 1 mA, TJ = 25_C 650 − − V VGS = 0 V, ID = 1 mA, TJ = 150_C 700 − − V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS/DTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25_C − 0.63 − V/_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V − − 1 mA VDS = 520 V, TC = 125_C − 1.3 − IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V − − ±100 nA VGS = VDS, ID = 2.1 mA 2.4 − 4.0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 12 A − 108 125 mW Forward Transconductance VDS = 20 V, ID = 12 A − 26 − S VDS = 400 V, VGS = 0 V, f = 250 kHz − 2200 − pF − 34 − pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 379 − pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 56 − pF VDS = 400 V, ID = 12 A, VGS = 10 V (Note 4) − 44 − nC − 11 − nC Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance − 12 − nC f = 1 MHz − 1.1 − W VDD = 400 V, ID = 12 A, VGS = 10 V, Rg = 7.5 W (Note 4) − 22 − ns − 9.2 − ns SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time − 66 − ns Turn-Off Fall Time − 2.3 − ns Maximum Continuous Source to Drain Diode Forward Current − − 24 A ISM Maximum Pulsed Source to Drain Diode Forward Current − − 67 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 12 A − − 1.2 V VDD = 400 V, ISD = 12 A, dIF/dt = 100 A/ms − 314 − ns − 4.5 − mC tf SOURCE-DRAIN DIODE CHARACTERISTICS IS trr Reverse Recovery Time Qrr Reverse Recovery Charge Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 NTHL125N65S3H TYPICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) VGS = 10.0 V 40 100 250 ms Pulse Test TC = 25°C ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 50 VGS = 7.0 V VGS = 5.0 V VGS = 6.0 V 30 20 VGS = 4.5 V 10 VDS = 20 V 250 ms Pulse Test 25°C 150°C 10 −55°C VGS = 4.0 V 10 1 20 15 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics VGS = 10 V VGS = 20 V 0.1 30 20 10 40 VGS = 0 V 250 ms Pulse Test 10 150°C 25°C 1 −55°C 0.1 50 0 ID, DRAIN CURRENT (A) VGS, GATE−SOURCE VOLTAGE (V) CAPACITANCE (pF) Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 104 103 Ciss 102 Coss 101 Crss 100 0 100 200 300 400 0.8 0.6 1.0 1.2 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 106 VGS = 0 V f = 250 kHz 105 0.4 0.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage 10−1 6 5 4 VGS, GATE−SOURCE VOLTAGE (V) TC = 25°C 0 3 VDS, DRAIN−SOURCE VOLTAGE (V) 0.2 0 2 100 0.3 RDS(on), DRAIN−SOURCE ON−RESISTANCE (W) 5 0 IS, REVERSE DRAIN CURRENT (A) 0 500 600 10 ID = 12.0 A 8 VDS = 130 V 6 VDS = 400 V 4 2 0 0 10 20 30 40 Qg, TOTAL GATE CHARGE (nC) VDS, DRAIN−SOURCE VOLTAGE (V) Figure 6. Gate Charge Characteristics Figure 5. Capacitance Characteristics www.onsemi.com 4 50 NTHL125N65S3H TYPICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (continued) 3.0 VGS = 0 V ID = 10 mA RDS(ON), DRAIN−SOURCE ON−RESISTANCE (NORMALIZED) NORMALIZED DRAIN−SOURCE BREAKDOWN VOLTAGE 1.2 1.1 1.0 0.9 0.8 −75 −50 −25 0 25 50 75 100 125 150 175 2.0 1.5 1.0 0.5 0 −75 −50 −25 25 50 75 100 125 150 175 Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On−Resistance Variation vs. Temperature 30 ID, DRAIN CURRENT (A) 100 ms 10 1 ms Operation in this Area is Limited by RDS(on) 1 10 ms DC TC = 25°C TJ = 150°C Single Pulse 10 1 1000 100 25 20 15 10 5 0 25 8 7 6 5 4 3 2 1 0 100 200 300 400 75 100 125 Figure 10. Maximum Drain Current vs. Case Temperature Figure 9. Maximum Safe Operating Area 0 50 TC, CASE TEMPERATURE (°C) VDS, DRAIN−SOURCE VOLTAGE (V) Eoss (mJ) 0 TJ, JUNCTION TEMPERATURE (°C) 10 ms ID, DRAIN CURRENT (A) 2.5 TJ, JUNCTION TEMPERATURE (°C) 100 0.1 VGS = 10 V ID = 12.0 A 500 600 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. EOSS vs. Drain to Source Voltage www.onsemi.com 5 150 NTHL125N65S3H r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (continued) 1 D = 0.5 Duty Cycle −Descending Order P DM D = 0.2 0.1 D = 0.1 D = 0.05 D = 0.02 t1 t2 ZqJC(t) = r(t) x RqJC RqJC = 0.73°C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1/t2 D = 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Response Curve www.onsemi.com 6 0.1 1 NTHL125N65S3H VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time NTHL125N65S3H + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC. FRFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 NTHL125N65S3H PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE A www.onsemi.com 9 NTHL125N65S3H ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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