NTJD2152PT4G

NTJD2152P Trench Small Signal MOSFET 8 V, Dual P−Channel, SC−88 ESD Protection http://onsemi.com Features • • • • • Leading –8 V Trench for Low RDS(ON) Performance ESD Protected Gate Small Footprint (2 x 2 mm) Same Package as SC−70−6 Pb−Free Packages are Available V(BR)DSS RDS(on) TYP ID Max 0.22 W @ −4.5 V −8 V −0.775 A 0.32 W @ −2.5 V 0.51 W @ −1.8 V Applications • • • • Load Power switching DC−DC Conversion Li−Ion Battery Charging Circuits Cell Phones, Media Players, Digital Cameras, PDAs SOT−363 SC−88 (6 LEADS) S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Value Unit Drain−to−Source Voltage VDSS −8.0 V Gate−to−Source Voltage VGS ±8.0 V ID −0.775 A Parameter Continuous Drain Current (Based on RqJA) Steady State TA = 25 °C Power Dissipation (Based on RqJA) Steady State TA = 25 °C Continuous Drain Current (Based on RqJL) Steady State TA = 25 °C Power Dissipation (Based on RqJL) Steady State TA = 85 °C −0.558 PD TA = 85 °C 0.14 ID D1 G2 S2 −0.8 TA = 25 °C Pulsed Drain Current W 0.55 PD ±1.2 A TJ, TSTG −55 to 150 °C Continuous Source Current (Body Diode) IS −0.775 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Operating Junction and Storage Temperature 1 6 TA M G G SC−88/SOT−363 0.29 IDM t ≤10 ms MARKING DIAGRAM & PIN ASSIGNMENT A −1.1 TA = 85 °C TA = 85 °C Top View W 0.27 CASE 419B STYLE 28 1 S1 G1 D2 TA M G = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) THERMAL RESISTANCE RATINGS (Note 1) Parameter Symbol Typ Max Unit ORDERING INFORMATION Junction−to−Ambient – Steady State RqJA 400 460 °C/W Junction−to−Lead (Drain) – Steady State RqJL 194 226 See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 3 1 Publication Order Number: NTJD2152/D NTJD2152P ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated) Symbol Test Condition Min Typ Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −8.0 −10.5 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ −6.0 mV/°C Parameter Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −6.4 V 1.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±8.0 V 10 mA VGS(TH) VGS = VDS, ID = −250 mA −1.0 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) Forward Transconductance gFS −0.45 −0.83 2.2 mV/ °C VGS = −4.5 V, ID = −0.57 A 0.22 0.3 VGS = −2.5 V, ID = −0.48 A 0.32 0.46 VGS = −1.8 V, ID = −0.20 A 0.51 0.9 VGS = −4.0 V, ID = −0.57 A 2.0 W S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1.0 MHz, VDS = −8.0 V VGS = −4.5 V, VDS = −5.0 V, ID = −0.6 A 160 225 38 55 28 40 2.2 4.0 Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS 0.5 Gate−to−Drain Charge QGD 0.5 pF nC 0.1 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr VGS = −4.5 V, VDD = −4.0 V, ID = −0.5 A, RG = 8.0 W ns 13 23 td(OFF) 50 tf 36 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD tRR VGS = 0 V, IS = −0.23 A TJ = 25°C 0.76 TJ = 125°C 0.63 VGS = 0 V, dIS/dt = 100 A/ms, IS = −0.77 A 2. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 78 1.1 V ns NTJD2152P TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VGS = −4.5 V to −2.6 V VGS = −2.2 V −2 V −1.8 V 1 0.8 −1.6 V 0.6 0.4 −1.4 V 0.2 −1.2 V 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (AMPS) 1.2 1.4 TJ = 25°C 0.5 2 4 6 VDS ≥ −10 V 1.2 1 0.8 0.6 TJ = 125°C 0.4 25°C 0.2 TJ = −55°C 0 8 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1.6 0.4 0.8 1.2 2 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (AMPS) 1.4 VGS = −4.5 V 0.4 0.3 TJ = 125°C TJ = 25°C 0.2 TJ = −55°C 0.1 0 0.2 0 0.6 0.8 0.4 1 −ID, DRAIN CURRENT (AMPS) 1.2 1.4 0.5 TJ = 25°C 0.3 TJ = −55°C 0.2 0.1 0 0 0.2 0.6 0.4 0.8 1 −ID, DRAIN CURRENT (AMPS) 300 ID = −0.7 A VGS = −4.5 V and −2.5 V C, CAPACITANCE (pF) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = 125°C 1.2 1 0.8 −25 0 25 50 75 100 125 1.2 1.4 Figure 4. On−Resistance vs. Drain Current and Temperature 1.6 0.6 −50 VGS = −2.5 V 0.4 Figure 3. On−Resistance vs. Drain Current and Temperature 1.4 2.4 150 TJ = 25°C VGS = 0 V 240 Ciss 180 120 Coss 60 0 −8 Crss −6 −4 −2 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 0 NTJD2152P 5 0.7 QG(TOT) 4 −IS, SOURCE CURRENT (AMPS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VGS 3 QGS 2 1 0 QGD ID = −0.6 A TJ = 25°C 0 0.4 0.8 1.2 1.6 2 Qg, TOTAL GATE CHARGE (nC) VGS = 0 V 0.6 0.5 0.4 0.3 0.2 TJ = 150°C 0.1 TJ = 25°C 0 2.4 0 0.2 0.4 0.6 0.8 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 8. Diode Forward Voltage vs. Current http://onsemi.com 4 1 NTJD2152P ORDERING INFORMATION Package Type Tape and Reel Size† NTJD2152PT1 SOT−363 3000 / Tape & Reel NTJD2152PT1G SOT−363 (Pb−Free) 3000 / Tape & Reel NTJD2152PT2 SOT−363 3000 / Tape & Reel NTJD2152PT2G SOT−363 (Pb−Free) 3000 / Tape & Reel NTJD2152PT4 SOT−363 10,000 / Tape & Reel NTJD2152PT4G SOT−363 (Pb−Free) 10,000 / Tape & Reel Device Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y 1 SCALE 2:1 DATE 11 DEC 2012 2X aaa H D D H A D 6 5 GAGE PLANE 4 1 2 L L2 E1 E DETAIL A 3 aaa C 2X bbb H D 2X 3 TIPS e B 6X b ddd TOP VIEW C A-B D M A2 DETAIL A A 6X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H. 5. DATUMS A AND B ARE DETERMINED AT DATUM H. 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP. 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT. ccc C A1 SIDE VIEW C SEATING PLANE END VIEW c RECOMMENDED SOLDERING FOOTPRINT* 6X DIM A A1 A2 b C D E E1 e L L2 aaa bbb ccc ddd MILLIMETERS MIN NOM MAX −−− −−− 1.10 0.00 −−− 0.10 0.70 0.90 1.00 0.15 0.20 0.25 0.08 0.15 0.22 1.80 2.00 2.20 2.00 2.10 2.20 1.15 1.25 1.35 0.65 BSC 0.26 0.36 0.46 0.15 BSC 0.15 0.30 0.10 0.10 GENERIC MARKING DIAGRAM* 6 XXXMG G 6X 0.30 INCHES NOM MAX −−− 0.043 −−− 0.004 0.035 0.039 0.008 0.010 0.006 0.009 0.078 0.086 0.082 0.086 0.049 0.053 0.026 BSC 0.010 0.014 0.018 0.006 BSC 0.006 0.012 0.004 0.004 MIN −−− 0.000 0.027 0.006 0.003 0.070 0.078 0.045 0.66 1 2.50 0.65 PITCH XXX = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *Date Code orientation and/or position may vary depending upon manufacturing location. *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42985B SC−88/SC70−6/SOT−363 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y DATE 11 DEC 2012 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 STYLE 2: CANCELLED STYLE 3: CANCELLED STYLE 4: PIN 1. CATHODE 2. CATHODE 3. COLLECTOR 4. EMITTER 5. BASE 6. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. COLLECTOR 4. EMITTER 5. BASE 6. CATHODE STYLE 6: PIN 1. ANODE 2 2. N/C 3. CATHODE 1 4. ANODE 1 5. N/C 6. CATHODE 2 STYLE 7: PIN 1. SOURCE 2 2. DRAIN 2 3. GATE 1 4. SOURCE 1 5. DRAIN 1 6. GATE 2 STYLE 8: CANCELLED STYLE 9: PIN 1. EMITTER 2 2. EMITTER 1 3. COLLECTOR 1 4. BASE 1 5. BASE 2 6. COLLECTOR 2 STYLE 10: PIN 1. SOURCE 2 2. SOURCE 1 3. GATE 1 4. DRAIN 1 5. DRAIN 2 6. GATE 2 STYLE 11: PIN 1. CATHODE 2 2. CATHODE 2 3. ANODE 1 4. CATHODE 1 5. CATHODE 1 6. ANODE 2 STYLE 12: PIN 1. ANODE 2 2. ANODE 2 3. CATHODE 1 4. ANODE 1 5. ANODE 1 6. CATHODE 2 STYLE 13: PIN 1. ANODE 2. N/C 3. COLLECTOR 4. EMITTER 5. BASE 6. CATHODE STYLE 14: PIN 1. VREF 2. GND 3. GND 4. IOUT 5. VEN 6. VCC STYLE 15: PIN 1. ANODE 1 2. ANODE 2 3. ANODE 3 4. CATHODE 3 5. CATHODE 2 6. CATHODE 1 STYLE 16: PIN 1. BASE 1 2. EMITTER 2 3. COLLECTOR 2 4. BASE 2 5. EMITTER 1 6. COLLECTOR 1 STYLE 17: PIN 1. BASE 1 2. EMITTER 1 3. COLLECTOR 2 4. BASE 2 5. EMITTER 2 6. COLLECTOR 1 STYLE 18: PIN 1. VIN1 2. VCC 3. VOUT2 4. VIN2 5. GND 6. VOUT1 STYLE 19: PIN 1. I OUT 2. GND 3. GND 4. V CC 5. V EN 6. V REF STYLE 20: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR STYLE 21: PIN 1. ANODE 1 2. N/C 3. ANODE 2 4. CATHODE 2 5. N/C 6. CATHODE 1 STYLE 22: PIN 1. D1 (i) 2. GND 3. D2 (i) 4. D2 (c) 5. VBUS 6. D1 (c) STYLE 23: PIN 1. Vn 2. CH1 3. Vp 4. N/C 5. CH2 6. N/C STYLE 24: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE STYLE 25: PIN 1. BASE 1 2. CATHODE 3. COLLECTOR 2 4. BASE 2 5. EMITTER 6. COLLECTOR 1 STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 STYLE 27: PIN 1. BASE 2 2. BASE 1 3. COLLECTOR 1 4. EMITTER 1 5. EMITTER 2 6. COLLECTOR 2 STYLE 28: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN STYLE 29: PIN 1. ANODE 2. ANODE 3. COLLECTOR 4. EMITTER 5. BASE/ANODE 6. CATHODE STYLE 30: PIN 1. SOURCE 1 2. DRAIN 2 3. DRAIN 2 4. SOURCE 2 5. GATE 1 6. DRAIN 1 Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. DOCUMENT NUMBER: DESCRIPTION: 98ASB42985B SC−88/SC70−6/SOT−363 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative