NTJD3158C
Power MOSFET
20 V, +0.63/-0.82 A,
SC-88 Complementary, ESD Protected
Features
•Complementary N- and P-Channel MOSFET
•Small Size Dual SC-88 Package
•Reduced Gate Charge to Improve Switching Response
•Independently Connected Devices to Provide Design Flexibility
•This is a Pb-Free Device
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V(BR)DSS
RDS(on) Max
N-Ch
20 V
375 mW @ 4.5 V
P-Ch
-20 V
300 mW @ -4.5 V
Symbol
Value
Unit
Drain-to-Source Voltage
VDSS
20
V
Gate-to-Source Voltage
VGS
±12
V
ID
0.63
A
N-Channel
Continuous Drain
Current (Note 1)
Steady State
t≤5s
P-Channel
Continuous Drain
Current (Note 1)
Steady State
t≤5s
Power Dissipation
(Note 1)
TA = 25°C
TA = 85°C
0.46
TA = 25°C
0.72
TA = 25°C
-0.59
TA = 25°C
-0.93
t≤5s
N-Ch
P-Ch
TA = 25°C
tp = 10 ms
PD
1
6
D1
N-Ch
G1
2
5
G2
D2
3
4
S2
P-Ch
(Top View)
0.35
IDM
MARKING DIAGRAM &
PIN ASSIGNMENT
A
1.3
D1 G2 S2
-1.6
-55 to
150
°C
Source Current (Body Diode)
IS
0.46
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
THERMAL RESISTANCE RATINGS
Parameter
S1
W
0.27
TJ, Tstg
Operating Junction and Storage Temperature
SC-88 (SOT-363)
(6-Leads)
A
-0.82
TA = 85°C
Steady State
Pulsed Drain
Current
ID
-0.82 A
500 mW @ -2.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
0.63 A
445 mW @ 2.5 V
Applications
•DC-DC Conversion Circuits
•Load/Power Switching with Level Shift
ID Max
Symbol
Max
Unit
Junction-to-Ambient – Steady State (Note 1)
RqJA
460
°C/W
Junction-to-Ambient – t ≤ 5 s (Note 1)
RqJA
357
Junction-to-Lead (Drain) – Steady State (Note 1)
RqJL
226
6
1
TG MG
G
SC-88 (SOT-363)
CASE 419B
STYLE 26
1
S1 G1 D2
TG
M
G
= Specific Device Code
= Date Code
= Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
Device
Package
Shipping†
NTJD3158CT1G
SC-88
(Pb-Free)
3000/Tape & Reel
NTJD3158CT4G
SC-88
(Pb-Free)
10000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
January, 2008 - Rev. 0
1
Publication Order Number:
NTJD3158C/D
NTJD3158C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
N/P
Drain-to-Source
Breakdown Voltage
V(BR)DSS
N
Drain-to-Source Breakdown
Voltage Temperature Coefficient
V(BR)DSS/
TJ
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS (Note 3)
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
VGS = 0 V
P
IDSS
IGSS
ID = 250 mA
20
ID = -250 mA
-20
V
22
mV/°C
N
VGS = 0 V, VDS = 16 V
1.0
P
VGS = 0 V, VDS = -16 V
1.0
N
VDS = 0 V, VGS = ±12 V
±10
P
VDS = 0 V, VGS = ±4.5 V
±1.0
P
VDS = 0 V, VGS = ±12 V
mA
mA
6.0
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Drain-to-Source On Resistance
Forward Transconductance
VGS(TH)
RDS(on)
gFS
N
ID = 250 mA
0.6
P
ID = -250 mA
-0.45
1.5
V
mW
N
VGS = 4.5 V, ID = 0.63 A
290
375
P
VGS = -4.5 V, ID = -0.88 A
255
300
N
VGS = 2.5 V, ID = 0.40 A
360
445
500
P
VGS = -2.5 V, ID = -0.71 A
345
N
VDS = 4.0 V, ID = 0.63 A
2.0
P
VDS = -10 V, ID = -0.88 A
3.0
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
CISS
COSS
N
VDS = 20 V
33
P
VDS = -20 V
155
N
P
Reverse Transfer Capacitance
f = 1 MHz, VGS = 0 V
Gate-to-Source Charge
Gate-to-Drain Charge
13
25
VDS = 20 V
2.8
CRSS
N
QG(TOT)
N
VGS = 4.5 V, VDS = 10 V, ID = 0.63 A
1.3
P
VGS = -4.5 V, VDS = -15 V, ID = -0.88 A
2.2
QGS
N
VGS = 4.5 V, VDS = 10 V, ID = 0.63 A
0.2
P
VGS = -4.5 V, VDS = -15 V, ID = -0.88 A
0.5
P
Total Gate Charge
VDS = 20 V
VDS = -20 V
QGD
VDS = -20 V
46
pF
22
5.0
18
N
VGS = 4.5 V, VDS = 10 V, ID = 0.63 A
0.4
P
VGS = -4.5 V, VDS = -10 V, ID = -0.88 A
0.65
VGS = 4.5 V, VDD = 10 V,
ID = 0.5 A, RG = 20 W
227
3.0
nC
SWITCHING CHARACTERISTICS (Note 3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(ON)
83
N
tr
td(OFF)
tf
td(ON)
ns
786
506
5.8
P
tr
VGS = -4.5 V, VDD = -10 V,
ID = -0.5 A, RG = 20 W
td(OFF)
tf
6.5
13.5
3.5
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
N
P
N
P
VGS = 0 V, TJ = 25°C
VGS = 0 V, TJ = 125°C
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
IS = 0.23 A
0.76
1.1
IS = -0.48 A
-0.8
-1.2
IS = 0.23 A
0.63
IS = -0.48 A
-0.66
V
NTJD3158C
TYPICAL PERFORMANCE CURVES (N-Ch) (TJ = 25°C unless otherwise noted)
1.2
VGS = 4.5 V to 2.2 V
1.2
TJ = 25°C
VDS ≥ 10 V
VGS = 2 V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
1.4
1.8 V
1
0.8
1.6 V
0.6
0.4
1.4 V
0.2
1
0.8
0.6
0.4
TJ = 125°C
0.2
25°C
1.2 V
0.7
TJ = -55°C
0
2
4
6
8
10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
0
0.4
0.8
1.2
2
1.6
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
0
0
VGS = 4.5 V
0.6
0.5
TJ = 125°C
0.4
TJ = 25°C
0.3
TJ = -55°C
0.2
0.1
0
0
0.4
1
0.8
0.6
ID, DRAIN CURRENT (AMPS)
0.2
1.2
1.4
0.7
TJ = 125°C
0.5
0.4
TJ = 25°C
0.3
TJ = -55°C
0.2
0.1
0
0
0.2
0.6
0.4
1
0.8
ID, DRAIN CURRENT (AMPS)
1.4
80
ID = 0.63 A
VGS = 4.5 V
and 2.5 V
TJ = 25°C
C, CAPACITANCE (pF)
VGS = 0 V
1.6
1.4
1.2
1
60
40
Ciss
20
Coss
0.8
0.6
-50
1.2
Figure 4. On-Resistance vs. Drain Current and
Temperature
2
RDS(on), DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
VGS = 2.5 V
0.6
Figure 3. On-Resistance vs. Drain Current and
Temperature
1.8
2.4
Crss
0
-25
0
25
50
75
100
125
150
0
5
10
15
TJ, JUNCTION TEMPERATURE (°C)
DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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3
20
NTJD3158C
0.7
5
QG(TOT)
IS, SOURCE CURRENT (AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (N-Ch) (TJ = 25°C unless otherwise noted)
4
VGS
3
QGS
2
QGD
1
ID = 0.63 A
TJ = 25°C
0
0
0.2
0.4
0.6
0.8
1
Qg, TOTAL GATE CHARGE (nC)
1.2
VGS = 0 V
0.6
0.5
0.4
0.3
0.2
TJ = 150°C
0.1
TJ = 25°C
0
1.4
0
0.2
0.4
0.6
0.8
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 7. Gate-to-Source and
Drain-to-Source Voltage vs. Total Charge
Figure 8. Diode Forward Voltage vs. Current
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4
1
NTJD3158C
TYPICAL PERFORMANCE CURVES (P-Ch) (TJ = 25°C unless otherwise noted)
1
1
TJ = 25°C
-2 V
-ID, DRAIN CURRENT (AMPS)
-ID, DRAIN CURRENT (AMPS)
VGS = -4.5, -3.5 & -2.5 V
-1.75 V
0.75
0.5
-1.5 V
0.25
-1.25 V
-1 V
0
0.4
0
0.8
1.6
1.2
VDS ≥ -20 V
0.9
0.8
0.7
0.6
0.5
0.4
125°C
0.3
0.2
25°C
0.1
TJ = -55°C
0
2
0
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 10. Transfer Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
Figure 9. On-Region Characteristics
0.3
VGS = -4.5 V
TJ = 125°C
0.25
0.2
TJ = 25°C
0.15
TJ = -55°C
0.1
0
0.25
0.5
1
0.75
-ID, DRAIN CURRENT (AMPS)
2.5
TJ = 25°C
2.0
VGS = -1.8 V
1.5
1.0
0.5
VGS = -2.5 V
0
0.4
0.6
0.7
0.8
0.9
1
10000
VGS = 0 V
ID = -0.88 A
VGS = -4.5 V
-IDSS, LEAKAGE CURRENT (nA)
RDS(on), DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
0.5
Figure 12. On-Resistance vs. Drain Current
and Gate Voltage
2.0
1.6
1.4
TJ = 150°C
1000
1.2
1.0
0.8
0.6
0.4
0.2
0
-50
VGS = -4.5 V
-ID, DRAIN CURRENT (AMPS)
Figure 11. On-Resistance vs. Drain Current
and Temperature
1.8
0.5
1
1.5
2
2.5
3
3.5
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
TJ = 125°C
100
10
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
10
5
15
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 13. On-Resistance Variation with
Temperature
Figure 14. Drain-to-Source Leakage Current
vs. Voltage
0
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5
20
NTJD3158C
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (P-Ch) (TJ = 25°C unless otherwise noted)
350
VDS = 0 V
Ciss
VGS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
300
250
Crss
200
150
100
50
Coss
0
10
5
VGS
0
VDS
5
10
15
20
5
QT
4
3
Q1
1
ID = -0.88 A
TJ = 25°C
0
0
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
0.4
0.8
1.2
1.6
Qg, TOTAL GATE CHARGE (nC)
2
Figure 16. Gate-to-Source Voltage vs. Total
Gate Charge
Figure 15. Capacitance Variation
100
0.5
-IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
Q2
2
td(off)
tr
10
td(on)
VDD = -10 V
ID = -0.8 A
VGS = -4.5 V
tf
1
VGS = 0 V
TJ = 25°C
0.4
0.3
0.2
0.1
0
1
10
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
-VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
RG, GATE RESISTANCE (OHMS)
Figure 17. Resistive Switching Time Variation
vs. Gate Resistance
Figure 18. Diode Forward Voltage vs. Current
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
1
SCALE 2:1
DATE 11 DEC 2012
2X
aaa H D
D
H
A
D
6
5
GAGE
PLANE
4
1
2
L
L2
E1
E
DETAIL A
3
aaa C
2X
bbb H D
2X 3 TIPS
e
B
6X
b
ddd
TOP VIEW
C A-B D
M
A2
DETAIL A
A
6X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
ccc C
A1
SIDE VIEW
C
SEATING
PLANE
END VIEW
c
RECOMMENDED
SOLDERING FOOTPRINT*
6X
DIM
A
A1
A2
b
C
D
E
E1
e
L
L2
aaa
bbb
ccc
ddd
MILLIMETERS
MIN
NOM MAX
−−−
−−−
1.10
0.00
−−−
0.10
0.70
0.90
1.00
0.15
0.20
0.25
0.08
0.15
0.22
1.80
2.00
2.20
2.00
2.10
2.20
1.15
1.25
1.35
0.65 BSC
0.26
0.36
0.46
0.15 BSC
0.15
0.30
0.10
0.10
GENERIC
MARKING DIAGRAM*
6
XXXMG
G
6X
0.30
INCHES
NOM MAX
−−− 0.043
−−− 0.004
0.035 0.039
0.008 0.010
0.006 0.009
0.078 0.086
0.082 0.086
0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.006 BSC
0.006
0.012
0.004
0.004
MIN
−−−
0.000
0.027
0.006
0.003
0.070
0.078
0.045
0.66
1
2.50
0.65
PITCH
XXX = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
*Date Code orientation and/or position may
vary depending upon manufacturing location.
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC−88/SC70−6/SOT−363
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
DATE 11 DEC 2012
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
STYLE 2:
CANCELLED
STYLE 3:
CANCELLED
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. COLLECTOR
4. EMITTER
5. BASE
6. ANODE
STYLE 5:
PIN 1. ANODE
2. ANODE
3. COLLECTOR
4. EMITTER
5. BASE
6. CATHODE
STYLE 6:
PIN 1. ANODE 2
2. N/C
3. CATHODE 1
4. ANODE 1
5. N/C
6. CATHODE 2
STYLE 7:
PIN 1. SOURCE 2
2. DRAIN 2
3. GATE 1
4. SOURCE 1
5. DRAIN 1
6. GATE 2
STYLE 8:
CANCELLED
STYLE 9:
PIN 1. EMITTER 2
2. EMITTER 1
3. COLLECTOR 1
4. BASE 1
5. BASE 2
6. COLLECTOR 2
STYLE 10:
PIN 1. SOURCE 2
2. SOURCE 1
3. GATE 1
4. DRAIN 1
5. DRAIN 2
6. GATE 2
STYLE 11:
PIN 1. CATHODE 2
2. CATHODE 2
3. ANODE 1
4. CATHODE 1
5. CATHODE 1
6. ANODE 2
STYLE 12:
PIN 1. ANODE 2
2. ANODE 2
3. CATHODE 1
4. ANODE 1
5. ANODE 1
6. CATHODE 2
STYLE 13:
PIN 1. ANODE
2. N/C
3. COLLECTOR
4. EMITTER
5. BASE
6. CATHODE
STYLE 14:
PIN 1. VREF
2. GND
3. GND
4. IOUT
5. VEN
6. VCC
STYLE 15:
PIN 1. ANODE 1
2. ANODE 2
3. ANODE 3
4. CATHODE 3
5. CATHODE 2
6. CATHODE 1
STYLE 16:
PIN 1. BASE 1
2. EMITTER 2
3. COLLECTOR 2
4. BASE 2
5. EMITTER 1
6. COLLECTOR 1
STYLE 17:
PIN 1. BASE 1
2. EMITTER 1
3. COLLECTOR 2
4. BASE 2
5. EMITTER 2
6. COLLECTOR 1
STYLE 18:
PIN 1. VIN1
2. VCC
3. VOUT2
4. VIN2
5. GND
6. VOUT1
STYLE 19:
PIN 1. I OUT
2. GND
3. GND
4. V CC
5. V EN
6. V REF
STYLE 20:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
STYLE 21:
PIN 1. ANODE 1
2. N/C
3. ANODE 2
4. CATHODE 2
5. N/C
6. CATHODE 1
STYLE 22:
PIN 1. D1 (i)
2. GND
3. D2 (i)
4. D2 (c)
5. VBUS
6. D1 (c)
STYLE 23:
PIN 1. Vn
2. CH1
3. Vp
4. N/C
5. CH2
6. N/C
STYLE 24:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
STYLE 25:
PIN 1. BASE 1
2. CATHODE
3. COLLECTOR 2
4. BASE 2
5. EMITTER
6. COLLECTOR 1
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
STYLE 27:
PIN 1. BASE 2
2. BASE 1
3. COLLECTOR 1
4. EMITTER 1
5. EMITTER 2
6. COLLECTOR 2
STYLE 28:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
STYLE 29:
PIN 1. ANODE
2. ANODE
3. COLLECTOR
4. EMITTER
5. BASE/ANODE
6. CATHODE
STYLE 30:
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
6. DRAIN 1
Note: Please refer to datasheet for
style callout. If style type is not called
out in the datasheet refer to the device
datasheet pinout or pin assignment.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC−88/SC70−6/SOT−363
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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