NTJD3158CT4G

NTJD3158C Power MOSFET 20 V, +0.63/-0.82 A, SC-88 Complementary, ESD Protected Features • • • • • Complementary N- and P-Channel MOSFET Small Size Dual SC-88 Package Reduced Gate Charge to Improve Switching Response Independently Connected Devices to Provide Design Flexibility This is a Pb-Free Device http://onsemi.com V(BR)DSS N-Ch 20 V P-Ch -20 V RDS(on) Max 375 mW @ 4.5 V 445 mW @ 2.5 V 300 mW @ -4.5 V 500 mW @ -2.5 V SC-88 (SOT-363) (6-Leads) ID Max 0.63 A Applications • DC-DC Conversion Circuits • Load/Power Switching with Level Shift MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage N-Channel Continuous Drain Current (Note 1) P-Channel Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current Steady State t≤5s Steady State t≤5s Steady State t≤5s N-Ch P-Ch TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C tp = 10 ms PD ID Symbol VDSS VGS ID Value 20 ±12 0.63 0.46 0.72 -0.82 -0.59 -0.93 0.27 0.35 IDM 1.3 -1.6 TJ, Tstg IS TL -55 to 150 0.46 260 °C A °C A W A D2 Unit V V A G1 S1 -0.82 A 1 6 D1 N-Ch 2 5 G2 P-Ch 3 4 S2 (Top View) MARKING DIAGRAM & PIN ASSIGNMENT D1 G2 S2 1 SC-88 (SOT-363) CASE 419B STYLE 26 TG M G 6 TG MG G 1 S1 G1 D2 = Specific Device Code = Date Code = Pb-Free Package Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient – Steady State (Note 1) Junction-to-Ambient – t ≤ 5 s (Note 1) Junction-to-Lead (Drain) – Steady State (Note 1) Symbol RqJA RqJA RqJL Max 460 357 226 Unit °C/W (Note: Microdot may be in either location) ORDERING INFORMATION Device NTJD3158CT1G Package SC-88 (Pb-Free) SC-88 (Pb-Free) Shipping† 3000/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). NTJD3158CT4G 10000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 1 January, 2008 - Rev. 0 Publication Order Number: NTJD3158C/D NTJD3158C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter OFF CHARACTERISTICS (Note 3) Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current V(BR)DSS V(BR)DSS/ TJ IDSS IGSS N P N P P ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Drain-to-Source On Resistance VGS(TH) RDS(on) N P N P N P Forward Transconductance gFS N P CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge CISS COSS CRSS QG(TOT) QGS QGD N P N P N P N P N P N P SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Forward Diode Voltage td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf VSD N P N P IS = 0.23 A IS = -0.48 A IS = 0.23 A IS = -0.48 A P VGS = -4.5 V, VDD = -10 V, ID = -0.5 A, RG = 20 W N VGS = 4.5 V, VDD = 10 V, ID = 0.5 A, RG = 20 W 83 227 786 506 5.8 6.5 13.5 3.5 0.76 -0.8 0.63 -0.66 1.1 -1.2 V ns f = 1 MHz, VGS = 0 V VDS = 20 V VDS = -20 V VDS = 20 V VDS = -20 V VDS = 20 V VDS = -20 V VGS = 4.5 V, VDS = 10 V, ID = 0.63 A VGS = -4.5 V, VDS = -15 V, ID = -0.88 A VGS = 4.5 V, VDS = 10 V, ID = 0.63 A VGS = -4.5 V, VDS = -15 V, ID = -0.88 A VGS = 4.5 V, VDS = 10 V, ID = 0.63 A VGS = -4.5 V, VDS = -10 V, ID = -0.88 A 33 155 13 25 2.8 18 1.3 2.2 0.2 0.5 0.4 0.65 3.0 nC 5.0 22 46 pF ID = 250 mA ID = -250 mA VGS = 4.5 V, ID = 0.63 A VGS = -4.5 V, ID = -0.88 A VGS = 2.5 V, ID = 0.40 A VGS = -2.5 V, ID = -0.71 A VDS = 4.0 V, ID = 0.63 A VDS = -10 V, ID = -0.88 A 0.6 -0.45 290 255 360 345 2.0 3.0 375 300 445 500 S mW 1.5 V VGS = 0 V, VDS = 16 V VGS = 0 V, VDS = -16 V VDS = 0 V, VGS = ±12 V VDS = 0 V, VGS = ±4.5 V VDS = 0 V, VGS = ±12 V 6.0 N P VGS = 0 V ID = 250 mA ID = -250 mA 20 -20 22 1.0 1.0 ±10 ±1.0 mA mV/°C mA V Symbol N/P Test Condition Min Typ Max Unit DRAIN-SOURCE DIODE CHARACTERISTICS VGS = 0 V, TJ = 25°C VGS = 0 V, TJ = 125°C 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTJD3158C TYPICAL PERFORMANCE CURVES (N-Ch) (TJ = 25°C unless otherwise noted) 1.4 ID, DRAIN CURRENT (AMPS) 1.2 1 0.8 0.6 0.4 1.4 V 0.2 1.2 V 0 0 0 2 4 6 8 10 0 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1.6 V VGS = 4.5 V to 2.2 V VGS = 2 V 1.8 V TJ = 25°C ID, DRAIN CURRENT (AMPS) 1.2 VDS ≥ 10 V 1 0.8 0.6 0.4 0.2 TJ = 125°C 25°C TJ = -55°C 0.4 0.8 1.2 2 1.6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 2.4 Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.7 0.6 0.5 0.4 TJ = 25°C TJ = -55°C TJ = 125°C 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.2 Figure 2. Transfer Characteristics VGS = 4.5 V VGS = 2.5 V TJ = 125°C TJ = 25°C TJ = -55°C 0.3 0.2 0.1 0 0 0.2 0.4 1 0.8 0.6 ID, DRAIN CURRENT (AMPS) 1.2 1.4 0.6 0.4 1 0.8 ID, DRAIN CURRENT (AMPS) 1.2 1.4 Figure 3. On-Resistance vs. Drain Current and Temperature 2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 0 -25 0 25 50 75 100 125 150 ID = 0.63 A VGS = 4.5 V and 2.5 V 80 Figure 4. On-Resistance vs. Drain Current and Temperature TJ = 25°C VGS = 0 V C, CAPACITANCE (pF) 60 40 Ciss 20 Coss Crss 0 5 10 15 20 TJ, JUNCTION TEMPERATURE (°C) DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 NTJD3158C TYPICAL PERFORMANCE CURVES (N-Ch) (TJ = 25°C unless otherwise noted) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 IS, SOURCE CURRENT (AMPS) QG(TOT) 4 VGS 3 QGS QGD 0.7 VGS = 0 V 0.6 0.5 0.4 0.3 0.2 0.1 0 1.4 0 0.2 0.4 0.6 TJ = 150°C TJ = 25°C 0.8 1 2 1 0 0 0.2 ID = 0.63 A TJ = 25°C 0.4 0.6 0.8 1 Qg, TOTAL GATE CHARGE (nC) 1.2 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 7. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge Figure 8. Diode Forward Voltage vs. Current http://onsemi.com 4 NTJD3158C TYPICAL PERFORMANCE CURVES (P-Ch) (TJ = 25°C unless otherwise noted) 1 VGS = -4.5, -3.5 & -2.5 V -ID, DRAIN CURRENT (AMPS) -2 V 0.75 TJ = 25°C -1.75 V -ID, DRAIN CURRENT (AMPS) 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 2 0 25°C TJ = -55°C 0.5 1 1.5 2 2.5 3 3.5 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 125°C VDS ≥ -20 V 0.5 -1.5 V 0.25 -1.25 V -1 V 0 0.4 0.8 1.2 1.6 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0 Figure 9. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.3 VGS = -4.5 V TJ = 125°C 0.25 2.5 Figure 10. Transfer Characteristics TJ = 25°C 2.0 VGS = -1.8 V 1.5 0.2 TJ = 25°C 1.0 0.15 TJ = -55°C 0.5 0 0.4 VGS = -2.5 V VGS = -4.5 V 0.5 0.6 0.7 0.8 0.9 1 0.1 0 0.25 0.5 0.75 1 -ID, DRAIN CURRENT (AMPS) -ID, DRAIN CURRENT (AMPS) Figure 11. On-Resistance vs. Drain Current and Temperature 2.0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -50 ID = -0.88 A VGS = -4.5 V 10000 Figure 12. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V -IDSS, LEAKAGE CURRENT (nA) TJ = 150°C 1000 TJ = 125°C 100 10 -25 0 25 50 75 100 125 150 0 TJ, JUNCTION TEMPERATURE (°C) 10 5 15 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 20 Figure 13. On-Resistance Variation with Temperature Figure 14. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 5 NTJD3158C TYPICAL PERFORMANCE CURVES (P-Ch) (TJ = 25°C unless otherwise noted) -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 350 Ciss 300 C, CAPACITANCE (pF) 250 200 150 100 50 0 10 VDS = 0 V VGS = 0 V TJ = 25°C 5 QT 4 Crss 3 Q1 2 Q2 1 0 0 0.4 ID = -0.88 A TJ = 25°C 0.8 1.2 1.6 Qg, TOTAL GATE CHARGE (nC) 2 Coss 5 0 5 10 15 20 VGS VDS GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 15. Capacitance Variation Figure 16. Gate-to-Source Voltage vs. Total Gate Charge 100 -IS, SOURCE CURRENT (AMPS) 0.5 VGS = 0 V TJ = 25°C 0.4 t, TIME (ns) 10 td(off) tr td(on) tf VDD = -10 V ID = -0.8 A VGS = -4.5 V 10 RG, GATE RESISTANCE (OHMS) 100 0.3 0.2 0.1 0 1 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 17. Resistive Switching Time Variation vs. Gate Resistance Figure 18. Diode Forward Voltage vs. Current http://onsemi.com 6 NTJD3158C PACKAGE DIMENSIONS SC-88/SC70-6/SOT-363 CASE 419B-02 ISSUE W e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. 4 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 D 6 5 HE 1 2 3 -E- b 6 PL 0.2 (0.008) M E M DIM A A1 A3 b C D E e L HE A3 C A STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 A1 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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