NTJD4105C
MOSFET – Small Signal,
Complementary, SC-88
20 V / -8.0 V, +0.63 A / -0.775 A
Features
•
•
•
•
•
Complementary N and P Channel Device
Leading −8.0 V Trench for Low RDS(on) Performance
ESD Protected Gate − ESD Rating: Class 1
SC−88 Package for Small Footprint (2 x 2 mm)
Pb−Free Packages are Available
http://onsemi.com
V(BR)DSS
RDS(on) TYP
0.29 W @ 4.5 V
N−Ch 20 V
0.63 A
0.36 W @ 2.5 V
Applications
•
•
•
•
ID Max
0.22 W @ −4.5 V
DC−DC Conversion
Load/Power Switching
Single or Dual Cell Li−Ion Battery Supplied Devices
Cell Phones, MP3s, Digital Cameras, PDAs
P−Ch −8.0 V
0.51 W @ −1.8 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
N−Ch
Drain−to−Source Voltage
VDSS
P−Ch
N−Ch
Gate−to−Source Voltage
Continuous Drain Current
− Steady State
(Based on RqJL)
N−Ch
P−Ch
N−Ch
P−Ch
TA = 25°C
Value
Unit
20
V
−8.0
VGS
±12
ID
0.63
P−Ch
Continuous Drain Current
− Steady State
(Based on RqJA)
V
0.46
TA = 25°C
−0.775
TA = 85°C
−0.558
TA = 25°C
0.91
TA = 85°C
0.65
TA = 25°C
−1.1
TA = 85°C
A
IDM
±1.2
A
Power Dissipation − Steady State
(Based on RqJA)
TA = 25°C
PD
0.27
W
TA = 85°C
0.14
Power Dissipation − Steady State
(Based on RqJL)
TA = 25°C
0.55
TA = 85°C
0.29
Junction−to−Lead (Drain)
– Steady State
Typ
Max
°C
IS
0.63
A
May, 2019 − Rev. 2
2
5
G2
D2
3
4
S2
MARKING DIAGRAM &
PIN ASSIGNMENT
TL
260
RqJA
400
CASE 419B
STYLE 28
1
S1 G1 D2
°C
°C/W
460
RqJL
TC M G
G
SC−88/SOT−363
−0.775
194
TC
M
G
= Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
226
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.
© Semiconductor Components Industries, LLC, 2006
G1
1
−55 to
150
Max
Typ
D1
D1 G2 S2
THERMAL RESISTANCE RATINGS (Note 1)
Junction−to−Ambient
– Steady State
6
6
TJ,
TSTG
P−Ch
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
1
−0.8
tp ≤ 10 ms
N−Ch
S1
Top View
Pulsed Drain Current
Source Current (Body Diode)
SOT−363
SC−88 (6−LEADS)
±8.0
TA = 85°C
Operating Junction and Storage Temperature
−0.775 A
0.32 W @ −2.5 V
1
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Publication Order Number:
NTJD4105C/D
NTJD4105C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
N/P
Drain−to−Source
Breakdown Voltage
V(BR)DSS
Drain−to−Source Breakdown
Voltage Temperature Coefficient
V(BR)DSS
/ TJ
N
P
N
Parameter
Test Condition
Min
Typ
20
−8.0
27
−10.5
22
Max
Units
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source
Leakage Current
IGSS
VGS = 0 V
ID = 250 mA
ID = −250 mA
P
N
P
N
P
V
mV/ °C
−6.0
VGS = 0 V, VDS = 16 V
VGS = 0 V, VDS = −6.4 V
TJ = 25 °C
VDS = 0 V
VGS = ±12 V
VGS = ±8.0
VGS = VDS
ID = 250 mA
ID = −250 mA
1.0
1.0
10
10
mA
1.5
−1.0
V
mA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
Gate Threshold
Temperature Coefficient
VGS(TH) /
TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
N
P
N
P
N
P
N
P
P
N
P
0.6
−0.45
VGS = 4.5 V ID = 0.63 A
VGS = −4.5 V, ID = −0.57 A
VGS = 2.5 V, ID = 0.40 A
VGS = −2.5 V, ID = −0.48 A
VGS = −1.8 V, ID = −0.20 A
VDS = 4.0 V ID = 0.63 A
VDS = −4.0 V, ID = −0.57 A
0.92
−0.83
−2.1
2.2
0.29
0.22
0.36
0.32
0.51
2.0
2.0
VDS = 20 V
VDS = −8.0V
VDS = 20 V
f = 1 MHz, VGS = 0 V
VDS = −8.0 V
VDS = 20 V
VDS = −8.0 V
VGS = 4.5 V, VDS = 10 V, ID = 0.7 A
VGS = −4.5 V, VDS = −5.0 V, ID = −0.6 A
VGS = 4.5 V, VDS = 10 V, ID = 0.7 A
VGS = −4.5 V, VDS = −5.0 V, ID = −0.6 A
VGS = 4.5 V, VDS = 10 V, ID = 0.7 A
VGS = −4.5 V, VDS = −5.0 V, ID = −0.6 A
VGS = 4.5 V, VDS = 10 V, ID = 0.7 A
VGS = −4.5 V, VDS = −5.0 V, ID = −0.6 A
33
160
13
38
2.8
28
1.3
2.2
0.1
0.1
0.2
0.5
0.4
0.5
−mV/ °C
0.375
0.30
0.445
0.46
0.90
W
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
N
P
N
P
N
P
N
P
N
P
N
P
N
P
46
225
22
55
5.0
40
3.0
4.0
pF
nC
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
tf
td(ON)
tr
td(OFF)
tf
N
VGS = 4.5 V, VDD = 10 V,
ID = 0.5 A, RG = 20 W
P
VGS = −4.5 V, VDD = −4.0 V,
ID = −0.5 A, RG = 8.0 W
ms
0.083
0.227
0.786
0.506
0.013
0.023
0.050
0.036
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
tRR
N
P
N
P
N
P
VGS = 0 V, TJ = 25°C
VGS = 0 V, TJ = 125°C
VGS = 0 V,
dIS/dt = 90 A/ms
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
IS = 0.23 A
IS = −0.23 A
IS = 0.23 A
IS = −0.23 A
IS = 0.23 A
IS = −0.23 A
0.76
0.76
0.63
0.63
0.410
0.078
1.1
1.1
V
ms
NTJD4105C
TYPICAL N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS = 4.5 V to 2.2 V
1.2
VDS ≥ 10 V
ID, DRAIN CURRENT (AMPS)
VGS = 2 V
1.8 V
1
0.8
1.6 V
0.6
0.4
1.4 V
0.2
0.7
1
0.8
0.6
0.4
TJ = 125°C
0.2
25°C
1.2 V
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
1.2
TJ = 25°C
2
4
6
8
10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0
0.4
0.8
1.2
2
1.6
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
VGS = 4.5 V
0.6
0.5
TJ = 125°C
0.4
TJ = 25°C
0.3
TJ = −55°C
0.2
0.1
0
0
TJ = −55°C
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (AMPS)
1.4
0.4
1
0.6
0.8
ID, DRAIN CURRENT (AMPS)
0.2
1.4
1.2
0.7
TJ = 125°C
0.5
0.4
TJ = 25°C
0.3
TJ = −55°C
0.2
0.1
0
0
0.2
0.6
0.4
1
0.8
ID, DRAIN CURRENT (AMPS)
1.4
80
ID = 0.63 A
VGS = 4.5 V
and 2.5 V
TJ = 25°C
C, CAPACITANCE (pF)
VGS = 0 V
1.6
1.4
1.2
1
60
40
Ciss
20
Coss
0.8
0.6
−50
1.2
Figure 4. On−Resistance vs. Drain Current and
Temperature
2
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
VGS = 2.5 V
0.6
Figure 3. On−Resistance vs. Drain Current and
Temperature
1.8
2.4
Crss
−25
0
25
50
75
100
125
150
0
0
5
10
15
TJ, JUNCTION TEMPERATURE (°C)
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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3
20
NTJD4105C
5
0.7
QG(TOT)
4
IS, SOURCE CURRENT (AMPS)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS
3
QGS
2
QGD
1
0
ID = 0.63 A
TJ = 25°C
0
0.2
0.4
0.6
0.8
1
Qg, TOTAL GATE CHARGE (nC)
1.2
VGS = 0 V
0.6
0.5
0.4
0.3
0.2
TJ = 150°C
0.1
TJ = 25°C
0
1.4
0
0.2
0.4
0.6
0.8
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 7. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 8. Diode Forward Voltage vs. Current
http://onsemi.com
4
1
NTJD4105C
TYPICAL P−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS = −4.5 V to −2.6 V
VGS = −2.2 V
−2 V
−1.8 V
1
0.8
−1.6 V
0.6
0.4
−1.4 V
0.2
−1.2 V
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (AMPS)
1.2
1.4
TJ = 25°C
0.5
2
4
6
VDS ≥ −10 V
1.2
1
0.8
0.6
TJ = 125°C
0.4
25°C
0.2
TJ = −55°C
0
8
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1.6
0.4
0.8
1.2
2
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 9. On−Region Characteristics
Figure 10. Transfer Characteristics
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (AMPS)
1.4
VGS = −4.5 V
0.4
0.3
TJ = 125°C
TJ = 25°C
0.2
TJ = −55°C
0.1
0
0.2
0
0.6
0.8
0.4
1
−ID, DRAIN CURRENT (AMPS)
1.2
1.4
0.5
VGS = −2.5 V
TJ = 125°C
0.4
TJ = 25°C
0.3
TJ = −55°C
0.2
0.1
0
0
0.6
0.4
0.8
1
−ID, DRAIN CURRENT (AMPS)
300
ID = −0.7 A
VGS = −4.5 V
and −2.5 V
C, CAPACITANCE (pF)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.6
1.2
1
0.8
0.6
−50
0.2
−25
0
25
50
75
100
125
1.2
1.4
Figure 12. On−Resistance vs. Drain Current
and Temperature
Figure 11. On−Resistance vs. Drain Current
and Temperature
1.4
2.4
150
TJ = 25°C
VGS = 0 V
240
Ciss
180
120
Coss
60
0
−8
Crss
−6
−4
−2
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. On−Resistance Variation with
Temperature
Figure 14. Capacitance Variation
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5
0
NTJD4105C
5
0.7
QG(TOT)
4
−IS, SOURCE CURRENT (AMPS)
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL P−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS
3
QGS
2
1
0
QGD
ID = −0.6 A
TJ = 25°C
0
0.4
0.8
1.2
1.6
2
Qg, TOTAL GATE CHARGE (nC)
VGS = 0 V
0.6
0.5
0.4
0.3
0.2
TJ = 150°C
0.1
TJ = 25°C
0
2.4
0
0.2
0.4
0.6
0.8
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 15. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 16. Diode Forward Voltage vs. Current
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6
1
NTJD4105C
ORDERING INFORMATION
Package
Shipping†
NTJD4105CT1
SOT−363
3000 / Tape & Reel
NTJD4105CT1G
SOT−363
(Pb−Free)
3000 / Tape & Reel
NTJD4105CT2
SOT−363
3000 / Tape & Reel
NTJD4105CT2G
SOT−363
(Pb−Free)
3000 / Tape & Reel
NTJD4105CT4
SOT−363
10,000 / Tape & Reel
NTJD4105CT4G
SOT−363
(Pb−Free)
10,000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
1
SCALE 2:1
DATE 11 DEC 2012
2X
aaa H D
D
H
A
D
6
5
GAGE
PLANE
4
1
2
L
L2
E1
E
DETAIL A
3
aaa C
2X
bbb H D
2X 3 TIPS
e
B
6X
b
ddd
TOP VIEW
C A-B D
M
A2
DETAIL A
A
6X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
ccc C
A1
SIDE VIEW
C
SEATING
PLANE
END VIEW
c
RECOMMENDED
SOLDERING FOOTPRINT*
6X
DIM
A
A1
A2
b
C
D
E
E1
e
L
L2
aaa
bbb
ccc
ddd
MILLIMETERS
MIN
NOM MAX
−−−
−−−
1.10
0.00
−−−
0.10
0.70
0.90
1.00
0.15
0.20
0.25
0.08
0.15
0.22
1.80
2.00
2.20
2.00
2.10
2.20
1.15
1.25
1.35
0.65 BSC
0.26
0.36
0.46
0.15 BSC
0.15
0.30
0.10
0.10
GENERIC
MARKING DIAGRAM*
6
XXXMG
G
6X
0.30
INCHES
NOM MAX
−−− 0.043
−−− 0.004
0.035 0.039
0.008 0.010
0.006 0.009
0.078 0.086
0.082 0.086
0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.006 BSC
0.006
0.012
0.004
0.004
MIN
−−−
0.000
0.027
0.006
0.003
0.070
0.078
0.045
0.66
1
2.50
0.65
PITCH
XXX = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
*Date Code orientation and/or position may
vary depending upon manufacturing location.
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC−88/SC70−6/SOT−363
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
DATE 11 DEC 2012
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
STYLE 2:
CANCELLED
STYLE 3:
CANCELLED
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. COLLECTOR
4. EMITTER
5. BASE
6. ANODE
STYLE 5:
PIN 1. ANODE
2. ANODE
3. COLLECTOR
4. EMITTER
5. BASE
6. CATHODE
STYLE 6:
PIN 1. ANODE 2
2. N/C
3. CATHODE 1
4. ANODE 1
5. N/C
6. CATHODE 2
STYLE 7:
PIN 1. SOURCE 2
2. DRAIN 2
3. GATE 1
4. SOURCE 1
5. DRAIN 1
6. GATE 2
STYLE 8:
CANCELLED
STYLE 9:
PIN 1. EMITTER 2
2. EMITTER 1
3. COLLECTOR 1
4. BASE 1
5. BASE 2
6. COLLECTOR 2
STYLE 10:
PIN 1. SOURCE 2
2. SOURCE 1
3. GATE 1
4. DRAIN 1
5. DRAIN 2
6. GATE 2
STYLE 11:
PIN 1. CATHODE 2
2. CATHODE 2
3. ANODE 1
4. CATHODE 1
5. CATHODE 1
6. ANODE 2
STYLE 12:
PIN 1. ANODE 2
2. ANODE 2
3. CATHODE 1
4. ANODE 1
5. ANODE 1
6. CATHODE 2
STYLE 13:
PIN 1. ANODE
2. N/C
3. COLLECTOR
4. EMITTER
5. BASE
6. CATHODE
STYLE 14:
PIN 1. VREF
2. GND
3. GND
4. IOUT
5. VEN
6. VCC
STYLE 15:
PIN 1. ANODE 1
2. ANODE 2
3. ANODE 3
4. CATHODE 3
5. CATHODE 2
6. CATHODE 1
STYLE 16:
PIN 1. BASE 1
2. EMITTER 2
3. COLLECTOR 2
4. BASE 2
5. EMITTER 1
6. COLLECTOR 1
STYLE 17:
PIN 1. BASE 1
2. EMITTER 1
3. COLLECTOR 2
4. BASE 2
5. EMITTER 2
6. COLLECTOR 1
STYLE 18:
PIN 1. VIN1
2. VCC
3. VOUT2
4. VIN2
5. GND
6. VOUT1
STYLE 19:
PIN 1. I OUT
2. GND
3. GND
4. V CC
5. V EN
6. V REF
STYLE 20:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
STYLE 21:
PIN 1. ANODE 1
2. N/C
3. ANODE 2
4. CATHODE 2
5. N/C
6. CATHODE 1
STYLE 22:
PIN 1. D1 (i)
2. GND
3. D2 (i)
4. D2 (c)
5. VBUS
6. D1 (c)
STYLE 23:
PIN 1. Vn
2. CH1
3. Vp
4. N/C
5. CH2
6. N/C
STYLE 24:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
STYLE 25:
PIN 1. BASE 1
2. CATHODE
3. COLLECTOR 2
4. BASE 2
5. EMITTER
6. COLLECTOR 1
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
STYLE 27:
PIN 1. BASE 2
2. BASE 1
3. COLLECTOR 1
4. EMITTER 1
5. EMITTER 2
6. COLLECTOR 2
STYLE 28:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
STYLE 29:
PIN 1. ANODE
2. ANODE
3. COLLECTOR
4. EMITTER
5. BASE/ANODE
6. CATHODE
STYLE 30:
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
6. DRAIN 1
Note: Please refer to datasheet for
style callout. If style type is not called
out in the datasheet refer to the device
datasheet pinout or pin assignment.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC−88/SC70−6/SOT−363
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
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