NTJD4158CT1G

NTJD4158C Small Signal MOSFET 30 V/−20 V, +0.25/−0.88 A, Complementary, SC−88 Features • • • • • • • • Leading 20 V Trench for Low RDS(on) Performance ESD Protected Gate SC−88 Package for Small Footprint (2 x 2 mm) This is a Pb−Free Device http://onsemi.com V(BR)DSS N−Ch 30 V P−Ch −20 V RDS(on) Typ 1.0 W @ 4.5 V 1.5 W @ 2.5 V 215 mW @ −4.5 V 345 mW @ −2.5 V SC−88 (SOT−363) (6−Leads) S1 Value 30 −20 ±20 ±12 0.25 0.18 −0.88 −0.63 Unit V G1 V D2 A (Top View) 3 4 S2 2 5 G2 1 6 D1 ID Max 0.25 A −0.88 A Applications DC−DC Conversion Load/Power Management Load Switch Cell Phones, MP3s, Digital Cameras, PDAs MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage N−Channel Continuous Drain Current (Note 1) P−Channel Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current N−Ch P−Ch N−Ch P−Ch Steady State Steady State Steady State N−Ch P−Ch TA = 25°C TA = 85°C TA = 25°C TA = 85°C TA = 25°C tp = 10 ms PD IDM TJ, Tstg IS TL ID VGS Symbol VDSS MARKING DIAGRAM & PIN ASSIGNMENT W A °C A °C 1 SC−88 (SOT−363) CASE 419B STYLE 26 6 D1 G2 S2 TCD M G G 1 S1 G1 D2 0.27 0.5 −3.0 −55 to 150 0.25 −0.48 260 Operating Junction and Storage Temperature Source Current (Body Diode) N−Ch P−Ch Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TCD M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) Symbol RqJA Max 460 Unit °C/W THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 1) ORDERING INFORMATION Device NTJD4158CT1G Package SC−88 (Pb−Free) Shipping† 3000 Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 March, 2009 − Rev. 2 1 Publication Order Number: NTJD4158C/D NTJD4158C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter OFF CHARACTERISTICS (Note 3) Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/ TJ IDSS N P N P N P N P N P N P N P N P N P N P N P N P N P N P N P N P N P N VGS = 4.5 V, VDD = 5.0 V, ID = 250 mA, RG = 50 W P VGS = −4.5 V, VDD = −10 V, ID = −0.5 A, RG = 20 W VGS = 0 V ID = 250 mA ID = −250 mA 30 −20 33 −9.0 VGS = 0 V, VDS = 30 V TJ = 25°C VGS = 0 V, VDS = −16 V VGS = 0 V, VDS = 30 V TJ = 125°C VGS = 0 V, VDS = −16 V VDS = 0 V, VGS = 10 V VDS = 0 V, VGS = −4.5 V VGS = VDS ID = 100 mA ID = −250 mA 0.8 −0.45 1.0 1.0 0.5 0.5 1.0 1.0 1.2 3.2 −2.7 1.0 0.215 1.5 0.345 0.08 3.0 20 155 19 25 7.25 18 0.9 2.2 0.2 0.2 0.3 0.5 0.2 0.65 15 66 56 78 5.8 6.5 13.5 3.5 0.65 −0.8 0.45 −0.66 12.4 TBD 0.7 −1.2 1.5 mA V mV/ °C mA Symbol N/P Test Condition Min Typ Max Unit Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Gate Threshold Temperature Coefficient Drain−to−Source On Resistance IGSS VGS(TH) VGS(TH)/ TJ RDS(on) V mV/ °C Forward Transconductance gFS VGS = 4.5 V, ID = 10 mA VGS = −4.5 V, ID = −0.88 A VGS = 2.5 V, ID = 10 mA VGS = −2.5 V, ID = −0.71 A VDS = 3.0 V, ID = 10 mA VDS = −10 V, ID = −0.88 A VDS = 5.0 V VDS = −20 V VDS = 5.0 V f = 1 MHz, VGS = 0 V VDS = −20 V VDS = 5.0 V VDS = −20 V VGS = 5.0 V, VDS = 24 V, ID = 0.1 A VGS = −4.5 V, VDS = −10 V, ID = −0.88 A VGS = 5.0 V, VDS = 24 V, ID = 0.1 A VGS = −4.5 V, VDS = −10 V, ID = −0.88 A VGS = 5.0 V, VDS = 24 V, ID = 0.1 A VGS = −4.5 V, VDS = −10 V, ID = −0.88 A VGS = 5.0 V, VDS = 24 V, ID = 0.1 A VGS = −4.5 V, VDS = −10 V, ID = −0.88 A 1.5 0.260 2.5 0.500 W S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge CISS COSS CRSS QG(TOT) QG(TH) QGS QGD 33 225 32 40 12 30 1.5 3.5 pF nC SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Forward Diode Voltage td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf VSD ns DRAIN−SOURCE DIODE CHARACTERISTICS N P N P N P VGS = 0 V, TJ = 25°C VGS = 0 V, TJ = 125°C VGS = 0 V, dIS/dt = 8.0 A/ms VGS = 0 V, dIS/dt = 100 A/ms IS = 10 mA IS = −0.48 A IS = 10 mA IS = −0.48 A IS = 10 mA IS = −0.48 mA V Reverse Recovery Time tRR ns 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTJD4158C TYPICAL N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 0.2 ID, DRAIN CURRENT (AMPS) 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0 0.25 0.5 0.75 1 1.25 1.5 1.8 V 2V VGS = 10 V to 2.8 V VGS = 2.6 V 2.4 V TJ = 25°C 2.2 V ID, DRAIN CURRENT (AMPS) 0.2 VDS = 5 V 0.15 0.1 TJ = 125°C 0.05 TJ = −55°C 1 1.25 1.5 1.75 2.25 2 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 2.5 25°C 0 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.005 0.055 0.105 0.155 ID, DRAIN CURRENT (AMPS) 0.205 TJ = −55°C TJ = 25°C VGS = 4.5 V TJ = 125°C 2.5 Figure 2. Transfer Characteristics TJ = 25°C 2.0 VGS = 2.5 V 1.5 1.0 0.5 0 0.005 VGS = 4 V 0.055 0.105 0.155 ID, DRAIN CURRENT (AMPS) 0.205 Figure 3. On−Resistance vs. Drain Current and Temperature 2 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.75 1.5 1.25 1 0.75 0.5 0.25 0 −50 −25 0 25 50 75 100 125 150 10 1000 Figure 4. On−Resistance vs. Drain Current and Gate Voltage ID = 0.01 A VGS = 4.5 V VGS = 0 V IDSS, LEAKAGE (nA) TJ = 150°C 100 TJ = 125°C 0 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NTJD4158C TYPICAL N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 50 40 30 20 10 0 10 5 QG 4 3 QGS 2 1 0 QGD VDS = 0 V Ciss Crss VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) Ciss Coss Crss 5 0 5 10 15 20 25 ID = 0.1 A TJ = 25°C 0 0.4 0.8 0.2 0.6 QG, TOTAL GATE CHARGE (nC) 1 VGS VDS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Gate Charge 1000 IS, SOURCE CURRENT (AMPS) VDD = 5.0 V ID = 0.25 A VGS = 4.5 V t, TIME (ns) 0.1 0.08 0.06 0.04 0.02 0 0.5 VGS = 0 V TJ = 25°C 100 td(off) tf tr td(on) 10 1 10 RG, GATE RESISTANCE (OHMS) 100 0.55 0.6 0.65 0.7 0.75 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTJD4158C TYPICAL P−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 1 −ID, DRAIN CURRENT (AMPS) −2 V VGS = −4.5, −3.5 & −2.5 V TJ = 25°C −1.75 V −ID, DRAIN CURRENT (AMPS) 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 25°C TJ = −55°C 0.5 1 1.5 2 2.5 3 3.5 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 125°C VDS ≥ −20 V 0.75 0.5 −1.5 V 0.25 −1.25 V −1 V 0 0.4 0.8 1.2 1.6 2 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0 Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.3 VGS = −4.5 V 0.25 TJ = 125°C 0.5 Figure 2. Transfer Characteristics TJ = 25°C 0.4 VGS = −2.5 V 0.3 0.2 0.1 0 0.4 VGS = −4.5 V 0.2 TJ = 25°C 0.15 TJ = −55°C 0.1 0 0.25 0.5 0.75 1 0.5 0.6 0.7 0.8 0.9 1 −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Drain Current and Temperature 2.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 −50 10000 −IDSS, LEAKAGE CURRENT (nA) Figure 4. On−Resistance vs. Drain Current and Gate Voltage ID = −0.88 A VGS = −4.5 V VGS = 0 V TJ = 150°C 1000 TJ = 125°C 100 −25 0 25 50 75 100 125 150 10 0 10 5 15 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 20 TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 5 NTJD4158C TYPICAL P−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 350 300 C, CAPACITANCE (pF) 250 200 150 100 50 0 10 5 0 5 10 Coss 15 20 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 5 QT 4 3 Q1 2 1 0 Q2 Ciss VDS = 0 V VGS = 0 V TJ = 25°C Crss ID = −0.88 A TJ = 25°C 0 0.4 0.8 1.2 1.6 Qg, TOTAL GATE CHARGE (nC) 2 VGS VDS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 −IS, SOURCE CURRENT (AMPS) 0.5 0.4 0.3 0.2 0.1 0 Figure 8. Gate−to−Source Voltage vs. Total Gate Charge VGS = 0 V TJ = 25°C t, TIME (ns) 10 td(off) tr td(on) tf VDD = −10 V ID = −0.8 A VGS = −4.5 V 10 RG, GATE RESISTANCE (OHMS) 100 1 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 6 NTJD4158C PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W D e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. MILLIMETERS DIM MIN NOM MAX A 0.80 0.95 1.10 A1 0.00 0.05 0.10 A3 0.20 REF b 0.10 0.21 0.30 C 0.10 0.14 0.25 D 1.80 2.00 2.20 E 1.15 1.25 1.35 e 0.65 BSC L 0.10 0.20 0.30 HE 2.00 2.10 2.20 STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 6 5 4 HE 1 2 3 −E− b 6 PL 0.2 (0.008) M E M A3 C A A1 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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