NTJD4401NT4

NTJD4401N, NVJD4401N MOSFET – Dual, N-Channel, Small Signal, ESD Protection, SC-88 20 V www.onsemi.com Features • • • • • • Small Footprint (2 x 2 mm) Low Gate Charge N−Channel Device ESD Protected Gate Same Package as SC−70 (6 Leads) AEC−Q101 Qualified and PPAP Capable − NVJD4401N These Devices are Pb−Free and are RoHS Compliant V(BR)DSS RDS(on) Typ 0.29 W @ 4.5 V 20 V 0.63 A 0.36 W @ 2.5 V Applications • • • • ID Max SC−88 (SOT−363) Load Power Switching Li−Ion Battery Supplied Devices Cell Phones, Media Players, Digital Cameras, PDAs DC−DC Conversion S1 1 6 D1 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) G1 2 5 G2 D2 3 4 S2 Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±12 V ID 0.63 A Continuous Drain Current (Based on RqJA) Steady State TA = 25°C Power Dissipation (Based on RqJA) Steady State TA = 25°C Continuous Drain Current (Based on RqJL) Steady State TA = 25°C Power Dissipation (Based on RqJL) Steady State TA = 85°C PD W 0.27 TA = 85°C ID A 0.91 TA = 85°C 0.65 TA = 25°C 0.55 W 0.29 IDM ±1.2 A TJ, TSTG −55 to 150 °C Continuous Source Current (Body Diode) IS 0.63 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C TA = 85°C t ≤10 ms Operating Junction and Storage Temperature MARKING DIAGRAM & PIN ASSIGNMENT 0.14 PD Pulsed Drain Current Top View 0.46 D1 G2 S2 1 SC−88/SOT−363 CASE 419B STYLE 28 6 TD M G G 1 S1 G1 D2 TD M G = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) THERMAL RESISTANCE RATINGS (Note 1) Parameter Symbol Typ Max Junction−to−Ambient – Steady State RqJA 400 458 Junction−to−Lead (Drain) – Steady State RqJL 194 252 Units ORDERING INFORMATION °C/W See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq. © Semiconductor Components Industries, LLC, 2015 May, 2019 − Rev. 7 1 Publication Order Number: NTJD4401N/D NTJD4401N, NVJD4401N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Symbol Test Condition Min Typ Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 20 27 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 22 mV/ °C Parameter Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 16 V 1.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±12 V 10 mA VGS(TH) VGS = VDS, ID = 250 mA 1.5 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) Forward Transconductance gFS 0.6 0.92 −2.1 mV/ °C VGS = 4.5 V, ID = 0.63 A 0.29 0.375 VGS = 2.5 V, ID = 0.40 A 0.36 0.445 VDS = 4.0 V, ID = 0.63 A 2.0 W S CHARGES AND CAPACITANCES CISS Input Capacitance Output Capacitance Reverse Transfer Capacitance COSS CRSS VGS = 0 V, f = 1.0 MHz, VDS = 20 V 33 46 13 22 2.8 5.0 1.3 3.0 Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 0.4 td(ON) 0.083 tr 0.227 VGS = 4.5 V, VDS = 10 V, ID = 0.63 A pF nC 0.1 0.2 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(OFF) VGS = 4.5 V, VDD = 10 V, ID = 0.5 A, RG = 20 W tf ms 0.786 0.506 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR VGS = 0 V, IS =0.23 A TJ = 25°C TJ = 125°C VGS = 0 V, dIS/dt = 100 A/ms, IS = 0.63 A 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 0.76 1.1 V 0.63 0.410 ms NTJD4401N, NVJD4401N TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VGS = 4.5 V to 2.2 V 1.2 VDS ≥ 10 V ID, DRAIN CURRENT (AMPS) VGS = 2 V 1.8 V 1 0.8 1.6 V 0.6 0.4 1.4 V 0.2 0.7 1 0.8 0.6 0.4 TJ = 125°C 0.2 25°C 1.2 V 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 1.2 TJ = 25°C 2 4 6 8 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0 0.4 0.8 1.2 2 1.6 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics VGS = 4.5 V 0.6 0.5 TJ = 125°C 0.4 TJ = 25°C 0.3 TJ = −55°C 0.2 0.1 0 0 TJ = −55°C 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) 1.4 0.4 1 0.6 0.8 ID, DRAIN CURRENT (AMPS) 0.2 1.2 1.4 0.7 TJ = 125°C 0.5 0.4 TJ = 25°C 0.3 TJ = −55°C 0.2 0.1 0 0 0.2 0.6 0.4 1 0.8 ID, DRAIN CURRENT (AMPS) 1.4 80 ID = 0.63 A VGS = 4.5 V and 2.5 V TJ = 25°C C, CAPACITANCE (pF) VGS = 0 V 1.6 1.4 1.2 1 60 40 Ciss 20 Coss 0.8 0.6 −50 1.2 Figure 4. On−Resistance vs. Drain Current and Temperature 2 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) VGS = 2.5 V 0.6 Figure 3. On−Resistance vs. Drain Current and Temperature 1.8 2.4 Crss −25 0 25 50 75 100 125 150 0 0 5 10 15 TJ, JUNCTION TEMPERATURE (°C) DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Capacitance Variation www.onsemi.com 3 20 NTJD4401N, NVJD4401N 5 0.7 QG(TOT) 4 IS, SOURCE CURRENT (AMPS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VGS 3 QGS 2 QGD 1 0 ID = 0.63 A TJ = 25°C 0 0.2 0.4 0.6 0.8 1 Qg, TOTAL GATE CHARGE (nC) 1.2 0.5 0.4 0.3 0.2 TJ = 150°C 0.1 TJ = 25°C 0 1.4 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE VGS = 0 V 0.6 Figure 8. Diode Forward Voltage vs. Current 1000 D = 0.5 100 0.2 0.1 0.05 10 0.02 0.01 SINGLE PULSE 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME t,(s) Figure 9. Thermal Response ORDERING INFORMATION Package Shipping† NTJD4401NT1G SC−88 (Pb−Free) 3000 / Tape & Reel NVJD4401NT1G SC−88 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y 1 SCALE 2:1 DATE 11 DEC 2012 2X aaa H D D H A D 6 5 GAGE PLANE 4 1 2 L L2 E1 E DETAIL A 3 aaa C 2X bbb H D 2X 3 TIPS e B 6X b ddd TOP VIEW C A-B D M A2 DETAIL A A 6X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H. 5. DATUMS A AND B ARE DETERMINED AT DATUM H. 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP. 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT. ccc C A1 SIDE VIEW C SEATING PLANE END VIEW c RECOMMENDED SOLDERING FOOTPRINT* 6X DIM A A1 A2 b C D E E1 e L L2 aaa bbb ccc ddd MILLIMETERS MIN NOM MAX −−− −−− 1.10 0.00 −−− 0.10 0.70 0.90 1.00 0.15 0.20 0.25 0.08 0.15 0.22 1.80 2.00 2.20 2.00 2.10 2.20 1.15 1.25 1.35 0.65 BSC 0.26 0.36 0.46 0.15 BSC 0.15 0.30 0.10 0.10 GENERIC MARKING DIAGRAM* 6 XXXMG G 6X 0.30 INCHES NOM MAX −−− 0.043 −−− 0.004 0.035 0.039 0.008 0.010 0.006 0.009 0.078 0.086 0.082 0.086 0.049 0.053 0.026 BSC 0.010 0.014 0.018 0.006 BSC 0.006 0.012 0.004 0.004 MIN −−− 0.000 0.027 0.006 0.003 0.070 0.078 0.045 0.66 1 2.50 0.65 PITCH XXX = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *Date Code orientation and/or position may vary depending upon manufacturing location. *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42985B SC−88/SC70−6/SOT−363 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y DATE 11 DEC 2012 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 STYLE 2: CANCELLED STYLE 3: CANCELLED STYLE 4: PIN 1. CATHODE 2. CATHODE 3. COLLECTOR 4. EMITTER 5. BASE 6. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. COLLECTOR 4. EMITTER 5. BASE 6. CATHODE STYLE 6: PIN 1. ANODE 2 2. N/C 3. CATHODE 1 4. ANODE 1 5. N/C 6. CATHODE 2 STYLE 7: PIN 1. SOURCE 2 2. DRAIN 2 3. GATE 1 4. SOURCE 1 5. DRAIN 1 6. GATE 2 STYLE 8: CANCELLED STYLE 9: PIN 1. EMITTER 2 2. EMITTER 1 3. COLLECTOR 1 4. BASE 1 5. BASE 2 6. COLLECTOR 2 STYLE 10: PIN 1. SOURCE 2 2. SOURCE 1 3. GATE 1 4. DRAIN 1 5. DRAIN 2 6. GATE 2 STYLE 11: PIN 1. CATHODE 2 2. CATHODE 2 3. ANODE 1 4. CATHODE 1 5. CATHODE 1 6. ANODE 2 STYLE 12: PIN 1. ANODE 2 2. ANODE 2 3. CATHODE 1 4. ANODE 1 5. ANODE 1 6. CATHODE 2 STYLE 13: PIN 1. ANODE 2. N/C 3. COLLECTOR 4. EMITTER 5. BASE 6. CATHODE STYLE 14: PIN 1. VREF 2. GND 3. GND 4. IOUT 5. VEN 6. VCC STYLE 15: PIN 1. ANODE 1 2. ANODE 2 3. ANODE 3 4. CATHODE 3 5. CATHODE 2 6. CATHODE 1 STYLE 16: PIN 1. BASE 1 2. EMITTER 2 3. COLLECTOR 2 4. BASE 2 5. EMITTER 1 6. COLLECTOR 1 STYLE 17: PIN 1. BASE 1 2. EMITTER 1 3. COLLECTOR 2 4. BASE 2 5. EMITTER 2 6. COLLECTOR 1 STYLE 18: PIN 1. VIN1 2. VCC 3. VOUT2 4. VIN2 5. GND 6. VOUT1 STYLE 19: PIN 1. I OUT 2. GND 3. GND 4. V CC 5. V EN 6. V REF STYLE 20: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR STYLE 21: PIN 1. ANODE 1 2. N/C 3. ANODE 2 4. CATHODE 2 5. N/C 6. CATHODE 1 STYLE 22: PIN 1. D1 (i) 2. GND 3. D2 (i) 4. D2 (c) 5. VBUS 6. D1 (c) STYLE 23: PIN 1. Vn 2. CH1 3. Vp 4. N/C 5. CH2 6. N/C STYLE 24: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE STYLE 25: PIN 1. BASE 1 2. CATHODE 3. COLLECTOR 2 4. BASE 2 5. EMITTER 6. COLLECTOR 1 STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 STYLE 27: PIN 1. BASE 2 2. BASE 1 3. COLLECTOR 1 4. EMITTER 1 5. EMITTER 2 6. COLLECTOR 2 STYLE 28: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN STYLE 29: PIN 1. ANODE 2. ANODE 3. COLLECTOR 4. EMITTER 5. BASE/ANODE 6. CATHODE STYLE 30: PIN 1. SOURCE 1 2. DRAIN 2 3. DRAIN 2 4. SOURCE 2 5. GATE 1 6. DRAIN 1 Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. DOCUMENT NUMBER: DESCRIPTION: 98ASB42985B SC−88/SC70−6/SOT−363 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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