NTJS4160N

NTJS4160N Power MOSFET 30 V, 3.2 A, Single N-Channel, SC-88 Features • Offers an Low RDS(on) Solution in the SC-88 Package • Low Profile (< 1.1 mm) Allows it to fit Easily into Extremely Thin • • • Environments such as Portable Electronics Operates at Standard Logic Level Gate Drive Low Gate Charge This is a Pb-Free Device V(BR)DSS 30 V http://onsemi.com RDS(on) TYP 45 mW @ 10 V 65 mW @ 4.5 V ID Max 3.2 A Applications • DC-DC Converters (Buck and Boost Circuit) • Optimized for Battery Powered Portable Equipment such as, • • Cell Phones, PDAs, Media Players, etc. Load Management Battery Charging and OV IC Protection Circuits MARKING DIAGRAM 6 1 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t≤1s Power Dissipation (Note 1) Steady State t≤1s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current TA = 25 °C Steady State TA = 85 °C TA = 25 °C PD IDM TJ, TSTG IS TL ID TA = 25 °C TA = 85 °C TA = 25 °C PD TA = 25 °C 0.95 1.8 1.3 0.3 10 -55 to 150 1.3 260 W A A Symbol VDSS VGS ID Value 30 ±20 2.6 1.9 3.2 0.62 W Unit V V A SC-88 (SOT 363) CASE 419B STYLE 28 T7 MG G 1 T7 = Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) SC-88 (SOT-363) D 1 6 D D 2 5 D tp = 10 ms G 3 Top View 4 S Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) °C A °C ORDERING INFORMATION Device NTJS4160NT1G Package SC-88 (Pb-Free) Shipping† 3000 Units/Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface mounted on FR4 board using the minimum recommended pad size. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 1 March, 2008 - Rev. 1 Publication Order Number: NTJS4160N/D NTJS4160N THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient – Steady State (Note 3) Junction-to-Ambient - t ≤ 1 s (Note 3) Junction-to-Ambient – Steady State (Note 4) Symbol RqJA RqJA RqJA Max 200 132 420 Unit °C/W 3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V, ID = 250 mA ID = 250 mA, ref to 25°C VGS = 0 V, VDS = 24 V TJ = 25°C TJ = 125°C 30 20 1.0 10 100 -200 nA V mV/°C mA Symbol Test Condition Min Typ Max Unit Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = +20 V VDS = 0 V, VGS = -20 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH) VGS(TH)/TJ RDS(on) VGS = 10 V, ID = 2.6 A VGS = 4.5 V, ID = 2.2 A Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 1.3 A TJ = 25°C TJ = 125°C 0.79 0.67 10.3 VGS = 0 V, dIS/dt = 100 A/ms, IS = 1.3 A 7.2 3.1 4.0 nC ns 1.2 V td(ON) tr td(OFF) tf VGS = 4.5 V, VDD = 15 V, ID = 1.0 A, RG = 6.0 W 8.7 7.2 10.9 1.9 15 13 19 4.0 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = 4.5 V, VDS = 15 V, ID = 2.6 A VGS = 0 V, f = 1.0 MHz, VDS = 10 V 230 62 39 2.75 0.37 0.87 1.1 nC pF gFS VGS = 5.0 V, ID = 3.0 A VGS = VDS, ID = 250 mA 0.8 -5.0 45 65 4.2 60 85 S 2.4 V mV/°C mW Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge tRR Ta Tb QRR 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTJS4160N TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 10 9 ID, DRAIN CURRENT (AMPS) 8 7 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.0 V 2.8 V 2.6 V 2.4 V 3.5 4 TJ = 25°C 3.4 V 3.2 V 6V to 10 V 5V 4.0 V VGS = 3.8 V 3.6 V ID, DRAIN CURRENT (AMPS) 10 9 8 7 6 5 4 3 2 1 0 1 25°C TJ = 150°C TJ = -55°C 1.5 2 2.5 3 3.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 4 VDS ≥ 4 V VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.4 TJ = 25°C 0.35 ID = 2.6 A 0.3 0.25 0.2 0.15 0.1 0.05 0 1.0 2.0 3.0 6.0 7.0 8.0 5.0 VGS, GATE VOLTAGE (V) 4.0 9.0 10 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.1 Figure 2. Transfer Characteristics TJ = 25°C VGS = 4.5 V 0.05 VGS = 10 V 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 ID, DRAIN CURRENT (AMPS) 9.0 10 Figure 3. On-Resistance vs. Gate Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage 1000 1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 ID = 2.6 A 4.5 < VGS < 10 V VGS = 0 V TJ = 150°C IDSS, LEAKAGE (nA) 100 TJ = 125°C 10 1 -25 0 25 50 75 100 125 150 0 10 15 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTJS4160N TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VGS = 0 V VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 400 350 C, CAPACITANCE (pF) 300 250 200 150 100 50 0 0 10 5 15 20 25 DRAIN-TO-SOURCE VOLTAGE (VOLTS) 30 Crss Coss Ciss TJ = 25°C 5 QT VDS QGS 3 10 2 5 ID = 2.6 A TJ = 25°C 0 1 2 3 QG, TOTAL GATE CHARGE (nC) QGD VGS 20 VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 4 15 1 0 0 Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 100 IS, SOURCE CURRENT (AMPS) VDD = 15 V ID = 1.0 A VGS = 4.5 V t, TIME (ns) 10 td(off) td(on) tr tf 1 1 10 RG, GATE RESISTANCE (OHMS) 100 1.3 VGS = 0 V 1.2 1.1 TJ = 150°C 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.4 0.5 0.6 TJ = 125°C TJ = 25°C TJ = -40°C 0.7 0.8 0.9 1.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTJS4160N PACKAGE DIMENSIONS SC-88 (SOT-363) CASE 419B-02 ISSUE W D e STYLE 28: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 6 5 4 HE 1 2 3 -E- b 6 PL 0.2 (0.008) M E M DIM A A1 A3 b C D E e L HE A3 C A SOLDERING FOOTPRINT* 0.50 0.0197 A1 L 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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