NTK3043NT5G

NTK3043N MOSFET – Power, N-Channel with ESD Protection, SOT-723 20 V, 285 mA www.onsemi.com Features • • • • • • • Enables High Density PCB Manufacturing 44% Smaller Footprint than SC−89 and 38% Thinner than SC−89 Low Voltage Drive Makes this Device Ideal for Portable Equipment Low Threshold Levels, VGS(TH) < 1.3 V Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin Environments such as Portable Electronics Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels Using the Same Basic Topology These are Pb−Free and Halogen−Free Devices V(BR)DSS RDS(on) TYP ID Max 1.5 W @ 4.5 V 2.4 W @ 2.5 V 20 V 285 mA 5.1 W @ 1.8 V 6.8 W @ 1.65 V Top View 3 Applications • Interfacing, Switching • High Speed Switching • Cellular Phones, PDAs MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±10 V Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C tv5s TA = 25°C Steady State TA = 85°C ID Power Dissipation (Note 2) mA MARKING DIAGRAM 285 440 TA = 25°C PD mW 545 TA = 25°C Steady State 185 2 1 − Gate 2 − Source 3 − Drain 255 tv5s Continuous Drain Current (Note 2) 1 ID TA = 85°C mA 155 KA SOT−723 CASE 631AA STYLE 5 1 PD 310 IDM 400 mA TJ, TSTG −55 to 150 °C Source Current (Body Diode) (Note 2) IS 286 mA Device Package Shipping† Lead Temperature for Soldering Purposes (1/8” from case for 10 seconds) TL 260 °C NTK3043NT1G SOT−723* 4000 / Tape & Reel NTK3043NT5G SOT−723* 8000 / Tape & Reel Pulsed Drain Current TA = 25°C 210 M Parameter tp = 10 ms Operating Junction and Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2. Surface−mounted on FR4 board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2013 July, 2019 − Rev. 5 KA M mW 1 = Device Code = Date Code ORDERING INFORMATION †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *These packages are inherently Pb−Free. Publication Order Number: NTK3043N/D NTK3043N THERMAL RESISTANCE RATINGS Symbol Max Junction−to−Ambient – Steady State (Note 3) Parameter RqJA 280 Junction−to−Ambient – t = 5 s (Note 3) RqJA 228 Junction−to−Ambient – Steady State Minimum Pad (Note 4) RqJA 400 Unit °C/W 3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 4. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Condition Symbol Min 20 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage VGS = 0 V, ID = 100 mA V(BR)DSS Drain−to−Source Breakdown Voltage Temperature Coefficient ID = 100 mA, Reference to 25°C V(BR)DSS/TJ Zero Gate Voltage Drain Current VGS = 0 V, VDS = 16 V Gate−to−Source Leakage Current TJ = 25°C V 27 IDSS 1 TJ = 125°C VDS = 0 V, VGS = ±5 V mV/°C 10 IGSS mA 1 mA 1.3 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS = VDS, ID = 250 mA Gate Threshold Temperature Coefficient Drain−to−Source On Resistance 0.4 VGS(TH)/TJ −2.4 RDS(ON) 1.5 3.4 VGS = 4.5V, ID = 255 mA 1.6 3.8 VGS = 2.5 V, ID = 1 mA 2.4 4.5 VGS = 1.8 V, ID = 1 mA 5.1 10 VGS = 1.65 V, ID = 1 mA 6.8 15 VGS = 4.5V, ID = 10 mA Forward Transconductance VGS(TH) mV/°C W VDS = 5 V, ID = 100 mA gFS 0.275 S TA = 25°C RG 2.2 kW CISS 11 COSS 8.3 CRSS 2.7 td(ON) 13 Gate Resistance CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance VGS = 0 V, f = 1 MHz, VDS = 10 V Reverse Transfer Capacitance pF SWITCHING CHARACTERISTICS, VGS= 4.5 V (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time VGS = 4.5 V, VDD = 5 V, ID = 10 mA, RG = 6 W Fall Time tr 15 td(OFF) 94 tf 55 VSD 0.83 ns DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage TJ = 25°C VGS = 0 V, IS= 286 mA TJ = 125°C Reverse Recovery Time Charge Time Discharge Time VGS = 0 V, VDD = 20 V, dISD/dt = 100 A/ms, IS = 286 mA Reverse Recovery Charge 5. Pulse Test: pulse width v 300 ms, duty cycle v 2% 6. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2 0.69 tRR 9.1 ta 7.1 tb 2.0 QRR 3.7 1.2 V ns nC NTK3043N TYPICAL PERFORMANCE CURVES 0.3 VDS ≥ 5 V VGS = 3 V to 10 V ID, DRAIN CURRENT (AMPS) 2.5 V TJ = 25°C 0.2 2.2 V 2.0 V 0.1 1.8 V 1.6 V 1.4 V 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 1 3 2 5 4 TJ = 25°C Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 3 2 1 2 3 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TJ = 25°C 5 4 VGS = 2.5 V 3 2 1 VGS = 4.5 V 0 0.2 0.1 0.3 ID, DRAIN CURRENT (AMPS) Figure 4. On−Resistance vs. Drain Current and Gate Voltage 9.0 1000 8.0 2.5 6 Figure 3. On−Resistance vs. Gate−to−Source Voltage VGS = 0 V VGS = 1.65 V, ID = 1 mA 7.0 6.0 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE TJ = −55°C 1.5 2 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 4 VGS = 1.8 V, ID = 10 mA 5.0 4.0 VGS = 2.5 V, ID = 10 mA 3.0 2.0 100 TJ = 150°C TJ = 125°C 10 VGS = 4.5 V, ID = 10 mA 1.0 0 −50 TJ = 125°C 1 ID = 0.255 A TJ = 25°C 1 0.1 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 5 0 0.2 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) 0.3 −25 0 25 50 75 100 125 150 1 5 10 15 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 20 NTK3043N TYPICAL PERFORMANCE CURVES 25 TJ = 25°C Ciss C, CAPACITANCE (pF) 20 Crss 15 Ciss 10 Coss 5 0 10 VDS = 0 V 5 VGS = 0 V 0 VGS 5 Crss 10 15 20 VDS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 1000 t, TIME (ns) VDD = 5 V ID = 10 mA VGS = 4.5 V td(off) tf 100 tr td(on) 10 1 1 10 RG, GATE RESISTANCE (OHMS) 100 Figure 8. Resistive Switching Time Variation vs. Gate Resistance IS, SOURCE CURRENT (AMPS) 0.4 VGS = 0 V TJ = 25°C 0.3 0.2 0.1 TJ = 150°C TJ = 125°C 0 0.4 TJ = −55°C 0.5 0.7 0.6 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Diode Forward Voltage vs. Current www.onsemi.com 4 1.0 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE D DATE 10 AUG 2009 SCALE 4:1 −X− D b1 A −Y− 3 E 1 2X HE 2 2X e b C 0.08 X Y 3X 1 3X DIM A b b1 C D E e HE L L2 SIDE VIEW TOP VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. L GENERIC MARKING DIAGRAM* L2 BOTTOM VIEW STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN XX M 1 XX M RECOMMENDED SOLDERING FOOTPRINT* = Specific Device Code = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. 2X 0.40 2X MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON12989D SOT−723 Electronic versions are uncontrolled except when accessed directly from the Document Repository. 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