NTK3134N
MOSFET – Power, Single,
N-Channel with ESD
Protection, SOT-723
20 V, 890 mA
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Features
•
•
•
•
•
N−Channel Switch with Low RDS(on)
44% Smaller Footprint and 38% Thinner than SC89
Low Threshold Levels Allowing 1.5 V RDS(on) Rating
Operated at Low Logic Level Gate Drive
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V(BR)DSS
20 V
ID Max
890 mA
0.26 W @ 2.5 V
790 mA
0.43 W @ 1.8 V
700 mA
0.56 W @ 1.5 V
200 mA
SOT−723 (3−LEAD)
Applications
•
•
•
•
RDS(on) TYP
0.20 W @ 4.5 V
3
Load/Power Switching
Interface Switching
Logic Level Shift
Battery Management for Ultra Small Portable Electronics
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
V
Gate−to−Source Voltage
VGS
±8
V
ID
890
mA
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
640
t≤5s
TA = 25°C
990
Steady
State
TA = 25°C
PD
t≤5s
Continuous Drain
Current (Note 2)
Steady
State
Power Dissipation
(Note 2)
Pulsed Drain
Current
ID
TA = 85°C
TA = 25°C
tp = 10 ms
Operating Junction and Storage
Temperature
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
mW
450
May, 2019 − Rev. 4
Top View
1 − Gate
2 − Source
3 − Drain
KF M
SOT−723
CASE 631AA
STYLE 5
mA
750
1
KF
M
= Specific Device Code
= Date Code
540
PD
310
mW
IDM
1.8
A
TJ, TSTG
−55 to
150
°C
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces)
2. Surface mounted on FR4 board using the minimum recommended pad size
© Semiconductor Components Industries, LLC, 2014
2
MARKING DIAGRAM
550
TA = 25°C
1
1
ORDERING INFORMATION
Device
Package
Shipping†
NTK3134NT1G
SOT−723
4000 / Tape & Reel
NTK3134NT5G
SOT−723
8000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTK3134N/D
NTK3134N
THERMAL RESISTANCE RATINGS
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 3)
Parameter
RqJA
280
°C/W
Junction−to−Ambient – t = 5 s (Note 3)
RqJA
228
Junction−to−Ambient – Steady State Minimum Pad (Note 4)
RqJA
400
3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
4. Surface mounted on FR4 board using the minimum recommended pad size
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = 250 mA
20
Drain−to−Source Breakdown
Voltage Temperature Coefficient
V(BR)DSS/TJ
ID = 250 mA, Reference to 25°C
Zero Gate Voltage Drain Current
IDSS
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown
Voltage
Gate−to−Source Leakage Current
VGS = 0 V,
VDS = 16 V
V
18
mV/°C
TJ = 25°C
1.0
TJ = 125°C
2.0
IGSS
VDS = 0 V, VGS = ±4.5 V
VGS(TH)
VGS = VDS, ID = 250 mA
±0.5
mA
mA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
0.45
1.2
2.4
gFS
V
mV/°C
VGS = 4.5 V, ID = 890 mA
0.20
0.35
VGS = 2.5 V, ID = 780 mA
0.26
0.45
VGS = 1.8 V, ID = 700 mA
0.43
0.65
VGS = 1.5 V, ID = 200 mA
0.56
1.2
VDS = 10 V, ID = 800 mA
1.6
VGS = 0 V, f = 1 MHz, VDS = 16 V
79
120
W
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
13
20
Reverse Transfer Capacitance
CRSS
9.0
15
pF
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn On Delay Time
Rise Time
TurnOff Delay Time
Fall Time
td(ON)
tr
VGS = 4.5 V, VDS = 10 V, ID = 500 mA,
RG = 10 W
ns
6.7
4.8
td(OFF)
17.3
tf
7.4
DRAIN SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
VGS = 0 V, IS = 350 mA
TJ = 25°C
VGS = 0 V, dISD/dt = 100 A/ms,
IS = 1.0 A, VDD = 20 V
0.75
8.1
Charge Time
ta
Discharge Time
tb
1.7
QRR
3.0
Reverse Recovery Charge
1.2
V
ns
6.4
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width = 300 ms, duty cycle = 2%
6. Switching characteristics are independent of operating junction temperatures
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2
NTK3134N
TYPICAL CHARACTERISTICS
2.0
2.0 V
VDS ≥ 5 V
VGS = 4.5 V to 2.2 V
1.5
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
2.0
1.8 V
TJ = 25°C
1.0
1.6 V
1.5 V
0.5
1.5
1.0
TJ = 25°C
0.5
TJ = 125°C
1.4 V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
0
6
1.25
1.5
1.75
Figure 2. Transfer Characteristics
ID = 0.89 A
TJ = 25°C
1.00
0.75
0.50
0.25
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
VGS, GATE VOLTAGE (V)
2.0
0.30
TJ = 25°C
0.28
0.25
VGS = 2.5 V
0.23
0.20
VGS = 4.5 V
0.18
0.15
0.3
0.6
0.8
1.1
1.3
1.6
1.8
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
0.6
VGS = 0 V
VGS = 1.5 V, ID = 200 mA
0.5
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
1.0
Figure 1. On−Region Characteristics
1.25
1
0.75
VGS, GATE−TO−SOURCE VOLTAGE (V)
1.50
0
TJ = −55°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
0.4
VGS = 2.5 V, ID = 710 mA
0.3
TJ = 150°C
1000
VGS = 1.8 V, ID = 710 mA
TJ = 125°C
100
0.2
0.1
−60 −35
VGS = 4.5 V, ID = 1 A
−10
15
40
65
90
10
140
115
5.0
10
15
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
20
NTK3134N
TYPICAL CHARACTERISTICS
140
100
120
100
t, TIME (ns)
Ciss
80
60
td(off)
10
td(on)
tr
40
0
tf
Coss
20
Crss
0
2
4
6
8
10
12
14
16
18
1
20
1
10
100
DRAIN−TO−SOURCE VOLTAGE (V)
RG, GATE RESISTANCE (W)
Figure 7. Capacitance Variation
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
1.0
150°C
VGS = 0 V
0.9
IS, SOURCE CURRENT (A)
C, CAPACITANCE (pF)
VDD = 10 V
ID = 500 mA
VGS = 4.5 V
VGS = 0 V
TJ = 25°C
0.8
125°C
25°C
0.7
0.6
0.5
0.4
0.3
TJ = −55°C
0.2
0.1
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
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4
1.0
NTK3134N
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
b1
A
−Y−
3
E
1
2X
HE
2
2X
e
b
C
0.08 X Y
SIDE VIEW
TOP VIEW
3X
1
3X
DIM
A
b
b1
C
D
E
e
HE
L
L2
L
L2
BOTTOM VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.29 REF
0.15
0.20
0.25
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
2X
0.40
2X
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
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