NTK3139PT1G

NTK3139P MOSFET – Power, Single, P-Channel with ESD Protection, SOT-723 -20 V, -780 mA www.onsemi.com Features • • • • • P−channel Switch with Low RDS(on) 44% Smaller Footprint and 38% Thinner than SC−89 Low Threshold Levels Allowing 1.5 V RDS(on) Rating Operated at Low Logic Level Gate Drive These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS −20 V Applications RDS(on) TYP ID Max 0.38 W @ −4.5 V −780 mA 0.52 W @ −2.5 V −660 mA 0.70 W @ −1.8 V −100 mA 0.95 W @ −1.5 V −100 mA SOT−723 (3−LEAD) • Load/Power Switching • Interfacing, Logic Switching • Battery Management for Ultra Small Portable Electronics 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±6 V ID −780 mA Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C −570 tv5s TA = 25°C −870 Steady State TA = 25°C PD Steady State Power Dissipation (Note 2) Top View 1 − Gate 2 − Source 3 − Drain mW 450 550 TA = 25°C ID TA = 85°C TA = 25°C −480 310 mW IDM −1.2 A Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C tp = 10 ms KD M mA −660 PD Pulsed Drain Current 2 MARKING DIAGRAM tv5s Continuous Drain Current (Note 2) 1 SOT−723 CASE 631AA STYLE 5 1 KD = Specific Device Code M = Date Code ORDERING INFORMATION Device Package NTK3139PT1G Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2. Surface mounted on FR4 board using the minimum recommended pad size NTK3139PT1H NTK3139PT5G NTK3139PT5H Shipping† 4000 / Tape & Reel SOT−723 Pb−Free 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 July, 2019 − Rev. 2 1 Publication Order Number: NTK3139P/D NTK3139P THERMAL RESISTANCE RATINGS Symbol Max Unit Junction−to−Ambient – Steady State (Note 3) Parameter RqJA 280 °C/W Junction−to−Ambient – t = 5 s (Note 3) RqJA 228 Junction−to−Ambient – Steady State Minimum Pad (Note 4) RqJA 400 3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 4. Surface mounted on FR4 board using the minimum recommended pad size MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VGS = 0 V, ID = −250 mA −20 −16.5 ID = −250 mA, Reference to 25°C VGS = 0 V, VDS = −16V V mV/°C TJ = 25°C −1.0 TJ = 125°C −2.0 IGSS VDS = 0 V, VGS = ±4.5 V VGS(TH) VGS = VDS, ID = −250 mA mA ±2.0 mA −1.2 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient −0.45 2.4 VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) mV/°C VGS = −4.5 V, ID = −780 mA 0.38 0.48 VGS = −2.5 V, ID = −660 mA 0.52 0.67 VGS = −1.8 V, ID = −100 mA 0.70 0.95 VGS = −1.5 V, ID = −100 mA 0.95 2.20 W Forward Transconductance gFS VDS = −10 V, ID = −540 mA 1.2 S Gate Resistance RG TA = 25°C 112 W CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS 113 170 Output Capacitance COSS 15 25 Reverse Transfer Capacitance CRSS 9.0 15 VGS = 0 V, f = 1 MHz, VDS = −16 V pF SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn On Delay Time Rise Time TurnOff Delay Time Fall Time td(ON) tr td(OFF) 9.0 VGS = −4.5 V, VDS = −10 V, ID = −200 mA, RG = 10 W tf 5.8 ns 32.7 20.3 DRAIN SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time Discharge Time Reverse Recovery Charge ta tb VGS = 0 V, IS = −350 mA TJ = 25°C −0.8 13.2 VGS = 0 V, dISD/dt = 100 A/ms, IS = −1.0 A, VDD = −20 V QRR www.onsemi.com 2 V ns 11.8 1.4 5.0 5. Pulse Test: pulse width = 300 ms, duty cycle = 2% 6. Switching characteristics are independent of operating junction temperatures −1.2 nC NTK3139P TYPICAL CHARACTERISTICS VDS ≥ −5 V 1.5 TJ = 25°C −ID, DRAIN CURRENT (A) −2.2 V −2.0 V 1.0 −1.8 V −1.6 V −1.5 V 0.5 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 1.8 VGS = −4.5 V to −2.5 V −1.4 V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0.9 TJ = 25°C 0.6 TJ = 125°C 0.3 TJ = −55°C 0.75 2.25 Figure 2. Transfer Characteristics ID = −0.78 A TJ = 25°C 1.5 1.0 0.5 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 −VGS, GATE VOLTAGE (V) 0.8 TJ = 25°C 0.7 VGS = −2.5 V 0.6 0.5 VGS = −4.5 V 0.4 0.3 0.2 0.4 0.7 0.9 1.2 1.4 1.7 1.9 −ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10,000 1.2 VGS = 0 V VGS = −1.5 V, ID = −100 mA 1.0 −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 1.75 Figure 1. On−Region Characteristics 2.0 VGS = −1.8 V, ID = −100 mA 0.8 1.25 −VGS, GATE−TO−SOURCE VOLTAGE (V) 2.5 1 1.2 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 3.0 0 1.5 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (A) 2.0 1000 VGS = −2.5 V, ID = −550 mA 0.6 0.4 TJ = 150°C TJ = 125°C 100 VGS = −4.5 V, ID = −630 mA 0.2 −60 −35 −10 15 40 65 90 10 140 115 5.0 10 15 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 20 NTK3139P TYPICAL CHARACTERISTICS 150 120 VDD = −10 V ID = −200 mA VGS = −4.5 V t, TIME (ns) td(off) 90 60 30 0 tf 10 td(on) tr Coss Crss 0 2 4 6 8 10 12 14 16 18 1 20 1 10 100 −DRAIN−TO−SOURCE VOLTAGE (V) RG, GATE RESISTANCE (W) Figure 7. Capacitance Variation Figure 8. Resistive Switching Time Variation vs. Gate Resistance 2.0 −IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) 100 VGS = 0 V TJ = 25°C Ciss 150°C VGS = 0 V 125°C 1.5 25°C 1.0 TJ = −55°C 0.5 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current www.onsemi.com 4 1.2 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE D DATE 10 AUG 2009 SCALE 4:1 −X− D b1 A −Y− 3 E 1 2X HE 2 2X e b C 0.08 X Y 3X 1 3X DIM A b b1 C D E e HE L L2 SIDE VIEW TOP VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. L GENERIC MARKING DIAGRAM* L2 BOTTOM VIEW STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN XX M 1 XX M RECOMMENDED SOLDERING FOOTPRINT* = Specific Device Code = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. 2X 0.40 2X MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON12989D SOT−723 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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