NTLGF3402P

NTLGF3402P Power MOSFET and Schottky Diode −20 V, −3.9 A FETKY), P−Channel, 2.0 A Schottky Barrier Diode, DFN6 http://onsemi.com Features • • • • • Flat Lead 6 Terminal Package 3x3x1 mm Enhanced Thermal Characteristics Low VF and Low Leakage Schottky Diode Reduced Gate Charge to Improve Switching Response This is a Pb−Free Device MOSFET V(BR)DSS −20 V RDS(on) TYP 110 mW @ −4.5 V ID MAX −3.9 A SCHOTTKY DIODE VR MAX 20 V VF TYP 0.36 V IF MAX 2.0 A Applications • Buck Converter • High Side DC−DC Conversion Circuits • Power Management in Portable, HDD and Computing MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State t ≤ 10 s Power Dissipation (Note 1) Steady State t ≤ 10 s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current TA = 25°C Steady State TA = 85°C TA = 25°C tp = 10 ms PD IDM TJ, TSTG IS TL ID TA = 25°C TA = 85°C TA = 25°C PD TA = 25°C 3.0 −2.3 −1.7 1.14 11 −55 to 150 1.1 260 W A °C A °C A Symbol VDSS VGS ID Value −20 ±12 −2.7 −2.0 −3.9 1.6 W Unit V V A 3 2 5 1 2 3 6 4 Heatsink 1, 6 2, 5 3 4 5 4 1 6 = Anode = Source = Gate = Drain/Cathode MARKING DIAGRAMS DFN6 CASE 506AH 1 3402 A Y WW G 1 3402 AYWW G Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NTLGF3402PT1G NTLGF3402PT2G Package DFN6 (Pb−Free) DFN6 (Pb−Free) Shipping† 3000 / Tape & Reel 3000 / Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size (Cu area = 0.5 in sq). †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 1 March, 2006 − Rev. 1 Publication Order Number: NTLGF3402P/D NTLGF3402P SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Symbol VRRM VR IF Max 20 20 2.0 Unit V V A THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 2) Junction−to−Ambient – t ≤ 10 s (Note 2) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – t ≤ 10 s (Note 3) Symbol RqJA RqJA RqJA RqJA Max 110 58 79 41 Unit °C/W °C/W °C/W °C/W 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS TJ = 25°C TJ = 125°C VGS = 0 V, ID = −250 mA −20 −9.0 −1.0 −5.0 ±100 nA V mV/°C mA Symbol Test Conditions Min Typ Max Unit VDS = −16 V, VGS = 0 V Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On−Resistance IGSS VDS = 0 V, VGS = ±12 V VGS(TH) VGS(TH)/TJ RDS(on) VGS = VDS, ID = −250 mA −0.6 2.7 −2.0 V mV/°C VGS = −4.5, ID = −2.7 A VGS = −2.5, ID = −1.0 A 110 190 4.8 140 225 mW Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time gFS VDS = −10 V, ID = −2.7 A S CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = −4.5 V, VDS = −10 V, ID = −2.7 A VGS = 0 V, f = 1.0 MHz, VDS = −10 V 230 105 40 3.8 0.32 0.7 1.6 350 225 75 10 pF nC td(ON) tr td(OFF) tf VGS = −4.5 V, VDD = −16 V, ID = −2.7 A, RG = 2.4 W 6.2 22 25 34 15 30 45 60 ns 4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTLGF3402P MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD tRR ta tb QRR VGS = 0 V, IS = −1.1 A , dIS/dt = 100 A/ms VGS = 0 V, IS = −1.1 A TJ = 25°C −0.8 53 15 38 37 nC −1.2 V ns SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current Symbol VF Test Conditions IF = 0.1 A IF = 1.0 A IR VR = 5 V, TJ = 100°C VR = 10 V VR = 20 V 6. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. 70 225 Min Typ 0.32 0.36 Max 0.34 0.39 12 mA mA Unit V http://onsemi.com 3 NTLGF3402P TYPICAL P−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 6 −ID, DRAIN CURRENT (AMPS) 5 4 3 2 1 0 0 0.4 0.8 1.2 1.6 2 6 −ID, DRAIN CURRENT (AMPS) −2.6 V TJ = 25°C 5 4 3 2 25°C 1 0 2.8 1 TJ = −55°C 1.5 2 2.5 3 3.5 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 4 100°C −2.8 V VDS ≥ −10 V VGS = −3 V to −10 V −2.4 V −2.2 V −2 V −1.8 V −1.6 V 2.4 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.25 Figure 2. Transfer Characteristics 0.2 ID = −2.7 A TJ = 25°C TJ = 25°C 0.2 VGS = −2.5 V 0.15 0.1 0.1 VGS = −4.5 V 0.05 1.5 0 2 6 7 8 9 4 3 5 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 10 2.5 −ID, DRAIN CURRENT (AMPS) 3.5 Figure 3. On−Resistance vs. Gate−to−Source Voltage 1.5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) ID = −2.7 A VGS = −4.5 V −IDSS, LEAKAGE (nA) 1000 10000 Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150°C 1 100 TJ = 100°C 0.5 −50 10 −25 0 25 50 75 100 125 150 5 10 15 20 −TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 NTLGF3402P TYPICAL P−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VDS = 0 V 600 C, CAPACITANCE (pF) CISS 500 400 300 200 100 0 10 5 0 5 10 15 20 CRSS COSS VGS = 0 V TJ = 25°C −VGS, GATE−TO−SOURCE VOLTAGE (V) 700 6 12 10 −VGS 8 6 4 ID = −2.7 A TJ = 25°C 0 0 1 2 3 4 Qg, TOTAL GATE CHARGE (nC) 2 0 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) QT 4 −VDS QGS 2 QGD −VGS −VDS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 tf td(off) tr t, TIME (ns) 10 −IS, SOURCE CURRENT (AMPS) Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge VGS = 0 V TJ = 100°C 1 TJ = 150°C TJ = 25°C 10 td(on) VDS = −16 V ID = −2.7 A VGS = −4.5 V 1 1 10 RG, GATE RESISTANCE (OHMS) 100 0.1 0.4 TJ = −55°C 0.5 0.6 0.7 0.8 0.9 1.0 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE Figure 10. Diode Forward Voltage vs. Current 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.1 0.01 t, TIME (s) 1 10 100 1000 Figure 11. FET Thermal Response http://onsemi.com 5 NTLGF3402P TYPICAL SCHOTTKY PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 TJ = 100°C 1 TJ = 125°C 1 TJ = 100°C TJ = 25°C TJ = −40°C 0.30 0.50 TJ = 125°C TJ = 25°C 0.30 0.50 0.1 0.10 0.1 0.10 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 12. Typical Forward Voltage 1E+0 IR, REVERSE CURRENT (AMPS) IR, MAXIMUM REVERSE CURRENT (AMPS) 1E+0 Figure 13. Maximum Forward Voltage 100E−3 TJ = 125°C 100E−3 TJ = 125°C TJ = 100°C 10E−3 TJ = 100°C 1E−3 10E−3 1E−3 100E−6 TJ = 25°C 10E−6 0 10 VR, REVERSE VOLTAGE (VOLTS) 100E−6 TJ = 25°C 10E+0 0 10 VR, REVERSE VOLTAGE (VOLTS) 20 20 Figure 14. Typical Reverse Current PFO, AVERAGE POWER DISSIPATION (WATTS) Figure 15. Maximum Reverse Current IO, AVERAGE FORWARD CURRENT (AMPS) 3.5 freq = 20 kHz 3 2.5 2 1.5 1 0.5 0 25 dc square wave Ipk/Io = p Ipk/Io = 5 Ipk/Io = 10 Ipk/Io = 20 1.8 1.6 1.4 1.2 square wave Ipk/Io = p Ipk/Io = 5 Ipk/Io = 10 dc 1 Ipk/Io = 20 0.8 0.6 0.4 0.2 0 0 0.5 1 1.5 2 2.5 3 3.5 IO, AVERAGE FORWARD CURRENT (AMPS) 45 65 85 105 125 145 TL, LEAD TEMPERATURE (°C) Figure 16. Current Derating Figure 17. Forward Power Dissipation http://onsemi.com 6 NTLGF3402P Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.1 0.01 t, TIME (s) 1 10 100 1000 Figure 18. Thermal Response Junction−to−Ambient http://onsemi.com 7 NTLGF3402P PACKAGE DIMENSIONS DFN6 3*3 MM, 0.95 PITCH CASE 506AH−01 ISSUE O D A B 2X 0.15 C 2X 0.15 C 0.10 C 6X 0.08 C SIDE VIEW D2 6X L 1 3 6X K 6 4 6X FETKY is a registered trademark of International Rectifier Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. ÇÇÇ ÇÇÇ ÇÇÇ ÇÇÇ PIN 1 REFERENCE NOTES: 1. DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMESNION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. MILLIMETERS MIN NOM MAX 0.80 0.90 1.00 0.00 0.03 0.05 0.20 REF 0.35 0.40 0.45 3.00 BSC 2.40 2.50 2.60 3.00 BSC 1.50 1.60 1.70 0.95 BSC 0.21 −−− −−− 0.30 0.40 0.50 E DIM A A1 A3 b D D2 E E2 e K L SEATING PLANE TOP VIEW A (A3) A1 e 4X C 0.450 0.0177 SOLDERING FOOTPRINT* 0.950 0.0374 E2 3.31 0.130 b (NOTE 3) 1.700 0.685 0.10 C A B BOTTOM VIEW 0.05 C 0.63 0.025 2.60 0.1023 SCALE 10:1 mm inches http://onsemi.com 8 NTLGF3402P/D