NTLJD3119C

NTLJD3119C Power MOSFET Features 20 V/−20 V, 4.6 A/−4.1 A, mCoolt Complementary, 2x2 mm, WDFN Package • Complementary N−Channel and P−Channel MOSFET • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • • • Conduction Footprint Same as SC−88 Package Leading Edge Trench Technology for Low On Resistance 1.8 V Gate Threshold Voltage Low Profile (< 0.8 mm) for Easy Fit in Thin Environments This is a Pb−Free Device V(BR)DSS N−Channel 20 V http://onsemi.com RDS(on) MAX 65 mW @ 4.5 V 75 mW @ 2.5 V 120 mW @ 1.8 V P−Channel −20 V 100 mW @ −4.5 V 135 mW @ −2.5 V 200 mW @ −1.8 V ID MAX 3.8 A 2.0 A 1.7 A −4.1 A −2.0 A −1.6 A Applications • Synchronous DC−DC Conversion Circuits • Load/Power Management of Portable Devices like PDA’s, Cellular • Phones and Hard Drives Color Display and Camera Flash Regulators Parameter Drain−to−Source Voltage Gate−to−Source Voltage N−Channel Continuous Drain Current (Note 1) P−Channel Continuous Drain Current (Note 1) Power Dissipation (Note 1) N−Channel Continuous Drain Current (Note 2) P−Channel Continuous Drain Current (Note 2) Power Dissipation (Note 2) Steady State t≤5s Steady State t≤5s Steady State t≤5s Steady State Steady State N−Ch P−Ch N−Ch P−Ch TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 85°C PD IDM TJ, TSTG TL ID MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol VDSS VGS ID Value 20 −20 ±8.0 3.8 2.8 4.6 −3.3 −2.4 −4.1 1.5 2.3 2.6 1.9 −2.3 −1.6 0.71 18 −20 −55 to 150 260 W A °C °C A Unit V D2 D1 WDFN6 CASE 506AN MARKING DIAGRAM 1 JMMG 2 G 3 6 5 4 Pin 1 V A JD = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ID A PIN CONNECTIONS S1 G1 D1 1 2 D2 D2 3 (Top View) 4 S2 6 5 D1 G2 PD W ID A Steady TA = 25°C State N−Ch Pulsed Drain Current tp = 10 ms P−Ch Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) ORDERING INFORMATION Device NTLJD3119CTAG NTLJD3119CTBG Package WDFN6 (Pb−Free) WDFN6 (Pb−Free) Shipping† 3000/Tape & Reel 3000/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm2, 2 oz Cu. © Semiconductor Components Industries, LLC, 2006 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. October, 2006 − Rev. 0 1 Publication Order Number: NTLJD3119C/D NTLJD3119C THERMAL RESISTANCE RATINGS Parameter SINGLE OPERATION (SELF−HEATED) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – Steady State Min Pad (Note 4) Junction−to−Ambient – t ≤ 5 s (Note 3) DUAL OPERATION (EQUALLY HEATED) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – Steady State Min Pad (Note 4) Junction−to−Ambient – t ≤ 5 s (Note 3) RqJA RqJA RqJA 58 133 40 °C/W RqJA RqJA RqJA 83 177 54 °C/W Symbol Max Unit 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm2, 2 oz Cu). http://onsemi.com 2 NTLJD3119C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS V(BR)DSS/TJ IDSS N P Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current N P N P N P Gate−to−Source Leakage Current IGSS N P ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(TH) VGS(TH)/TJ RDS(on) N P Gate Threshold Temperature Coefficient Drain−to−Source On Resistance N P N P N P N P Forward Transconductance gFS N P CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS COSS CRSS QG(TOT) QG(TH) QGS QGD N P Output Capacitance N P Reverse Transfer Capacitance N P Total Gate Charge N P Threshold Gate Charge N P Gate−to−Source Charge N P Gate−to−Drain Charge N P f = 1.0 MHz, VGS = 0 V VDS = 10 V VDS = −10 V VDS = 10 V VDS = −10 V VDS = 10 V VDS = −10 V VGS = 4.5 V, VDS = 10 V, ID = 3.8 A VGS = −4.5 V, VDS = −10 V, ID = −2.0 A VGS = 4.5 V, VDS = 10 V, ID = 3.8 A VGS = −4.5 V, VDS = −10 V, ID = −2.0 A VGS = 4.5 V, VDS = 10 V, ID = 3.8 A VGS = −4.5 V, VDS = −10 V, ID = −2.0 A VGS = 4.5 V, VDS = 10 V, ID = 3.8 A VGS = −4.5 V, VDS = −10 V, ID = −.02 A 271 531 72 91 43 56 3.7 5.5 0.3 0.7 0.6 1.0 1.0 1.4 nC pF VGS = 4.5 V , ID = 3.8 A VGS = −4.5 V , ID = −4.1 A VGS = 2.5 V , ID = 2.0 A VGS = −2.5 V, ID = −2.0 A VGS = 1.8 V , ID = 1.7 A VGS = −1.8 V, ID = −1.6 A VDS = 10 V, ID = 1.7 A VDS = −5.0 V , ID = −2.0 A VGS = VDS ID = 250 mA ID = −250 mA 0.4 −0.4 0.7 −0.7 −3.0 2.44 37 75 46 101 65 150 4.2 3.1 65 100 75 135 120 200 S mW 1.0 −1.0 mV/°C V VGS = 0 V, VDS = 16 V VGS = 0 V, VDS = −16 V VGS = 0 V, VDS = 16 V VGS = 0 V, VDS = −16 V TJ = 25 °C TJ = 85 °C VGS = 0 V ID = 250 mA ID = −250 mA 20 −20 10.4 9.95 1.0 −1.0 10 −10 ±100 ±100 nA mA mV/°C V Symbol N/P Test Conditions Min Typ Max Unit VDS = 0 V, VGS = ±8.0 V VDS = 0 V, VGS = ±8.0 V http://onsemi.com 3 NTLJD3119C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol N/P Test Conditions Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf VSD N P N P Reverse Recovery Time tRR ta tb QRR N P Charge Time N P Discharge Time N P Reverse Recovery Charge N P 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. VGS = 0 V, dIS / dt = 100 A/ms IS = 1.0 A IS = −1.0 A IS = 1.0 A IS = −1.0 A IS = 1.0 A IS = −1.0 A IS = 1.0 A IS = −1.0 A IS = 1.0 A IS = −1.0 A IS = 1.0 A IS = −1.0 A P VGS = −4.5 V, VDD = −10 V, ID = −2.0 A, RG = 2.0 W N VGS = 4.5 V, VDD = 16 V, ID = 1.0 A, RG = 2.0 W 3.8 4.7 11.1 5.8 5.2 13.2 13.7 19.1 ns DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VGS = 0 V, TJ = 25 °C VGS = 0 V, TJ = 125 °C 0.69 −0.75 0.52 −0.64 10.2 16.2 6.0 10.6 4.2 5.6 3.0 5.7 nC ns 1.0 −1.0 V http://onsemi.com 4 NTLJD3119C TYPICAL PERFORMANCE CURVES − N−CHANNEL (TJ = 25°C unless otherwise noted) 10 ID, DRAIN CURRENT (AMPS) VGS = 4 V to 2.2 V 10 ID, DRAIN CURRENT (AMPS) 2.0 V 1.8 V 8 6 4 TJ = 25°C VDS ≥ 10 V 8 6 4 2 0 TJ = 25°C 1.6 V 1.4 V 1.2 V 0 0.5 1 1.5 2 2.5 3 3.5 4 2 0 TJ = 100°C TJ = −55°C 1 1.5 2 2.5 VGS, GATE−TO−SOURCE VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.1 0.09 0.08 0.07 0.06 0.05 0.04 0.03 1.0 2.0 3.0 4.0 5.0 6.0 TJ = 25°C ID = 3.8 A RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 1 2 Figure 2. Transfer Characteristics TJ = 25°C VGS = 1.8 V VGS = 2.5 V VGS = 4.5 V 3 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current and Gate Voltage 10000 VGS = 0 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 −50 −25 0 25 50 75 100 125 150 ID = 3.8 A VGS = 4.5 V IDSS, LEAKAGE (nA) TJ = 150°C 1000 TJ = 100°C 100 2 4 6 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 5 NTLJD3119C TYPICAL PERFORMANCE CURVES − N−CHANNEL (TJ = 25°C unless otherwise noted) TJ = 25°C VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 600 500 C, CAPACITANCE (pF) 400 300 200 100 0 10 Crss Ciss VDS = 0 V VGS = 0 V 5 QT 4 3 2 1 0 20 VDS , DRAIN−TO−SOURCE VOLTAGE (VOLTS) 16 12 8 4 0 VDS QGS QGD VGS Coss ID = 3.8 A TJ = 25°C 0 1 2 3 QG, TOTAL GATE CHARGE (nC) 4 5 VGS 0 VDS 5 10 15 20 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 100 IS, SOURCE CURRENT (AMPS) VDD = 16 V ID = 1.0 A VGS = 4.5 V t, TIME (ns) Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge 2 VGS = 0 V TJ = 25°C td(off) tf tr td(on) 1.5 10 1 0.5 1 1 10 RG, GATE RESISTANCE (W) 100 0 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current http://onsemi.com 6 NTLJD3119C TYPICAL PERFORMANCE CURVES − P−CHANNEL (TJ = 25°C unless otherwise noted) 5 −ID, DRAIN CURRENT (AMPS) 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 VGS = −1.9 V to −6 V TJ = 25°C −1.8 V −1.7 V −1.6 V −1.5 V −1.4 V −1.3 V −1.2 V 4 4.5 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) −ID, DRAIN CURRENT (AMPS) 5 4 3 2 TJ = 25°C 1 TJ = 125°C 0 0 0.5 1 TJ = −55°C 1.5 2 2.5 3 VDS ≥ 10 V −VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 11. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.1 VGS = −4.5 V 0.09 0.08 0.07 0.06 0.05 0.04 1.0 TJ = 25°C TJ = 100°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.15 Figure 12. Transfer Characteristics TJ = 25°C VGS = −2.5 V 0.1 VGS = −4.5 V 0.05 TJ = −55°C 1.5 2.0 2.5 0 1 2 3 −ID, DRAIN CURRENT (A) 4 5 −ID, DRAIN CURRENT (A) Figure 13. On−Resistance versus Drain Current RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.6 1.4 1.2 1.0 0.8 0.6 −50 ID = −2.2 A VGS = −4.5 V −IDSS, LEAKAGE (nA) 10000 Figure 14. On−Resistance versus Drain Current and Gate Voltage VGS = 0 V TJ = 150°C 1000 100 TJ = 100°C −25 0 25 50 75 100 125 150 10 2 4 6 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 15. On−Resistance Variation with Temperature Figure 16. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 7 NTLJD3119C TYPICAL PERFORMANCE CURVES − P−CHANNEL (TJ = 25°C unless otherwise noted) VDS = 0 V VGS = 0 V Ciss TJ = 25°C −V GS, GATE−TO−SOURCE VOLTAGE (VOLTS) 1200 1000 C, CAPACITANCE (pF) 800 600 400 200 0 Crss Coss 5 QT 4 3 2 1 0 20 −V DS , DRAIN−TO−SOURCE VOLTAGE (VOLTS) 16 12 8 4 0 VDS QGS QGD VGS ID = −2.2 A TJ = 25°C 0 1 5 2 3 4 QG, TOTAL GATE CHARGE (nC) 6 5 VGS 0 VDS 5 10 15 20 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 17. Capacitance Variation 1000 −Is, SOURCE CURRENT (AMPS) VDD = −15 V ID = −2.2 A VGS = −4.5 V t, TIME (ns) 100 tf tr 10 td(off) td(on) Figure 18. Gate−To−Source and Drain−To−Source Voltage versus Total Charge 3 2.5 2 1.5 1 0.5 0 0 VGS = 0 V TJ = 150°C 0.1 0.2 0.3 0.4 0.5 0.6 TJ = 25°C 0.7 0.8 0.9 1.0 1 1 10 RG, GATE RESISTANCE (W) 100 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 19. Resistive Switching Time Variation versus Gate Resistance 100 −ID, DRAIN CURRENT (AMPS) Figure 20. Diode Forward Voltage versus Current 10 TC = 25°C TJ = 150°C SINGLE PULSE 10 ms 100 ms 1 ms 1 *See Note 2 on Page 1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 10 ms 0.1 dc 100 0.01 10 1 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 21. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 8 NTLJD3119C TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) EFFECTIVE TRANSIENT THERMAL RESISTANCE 1000 D = 0.5 0.2 0.1 10 0.05 0.02 1 0.01 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 t2 DUTY CYCLE, D = t1/t2 0.01 t, TIME (s) 0.1 1 t1 P(pk) *See Note 2 on Page 1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TA = P(pk) RqJA(t) 100 10 100 1000 Figure 22. Thermal Response http://onsemi.com 9 NTLJD3119C PACKAGE DIMENSIONS WDFN6, 2x2 CASE 506AN−01 ISSUE B D A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. DIM A A1 A3 b D D2 E E2 e K L J MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 2.00 BSC 0.57 0.77 2.00 BSC 0.90 1.10 0.65 BSC 0.25 REF 0.20 0.30 0.15 REF PIN ONE REFERENCE E 2X 0.10 C 2X 0.10 C 0.10 C 6X 0.08 C D2 6X L 6X K ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative ÍÍÍ ÍÍÍ ÍÍÍ A3 A1 D2 e 1 3 2X E2 6 6X 4 A C SEATING PLANE 6X SOLDERMASK DEFINED MOUNTING FOOTPRINT* 2.30 6X 4X 0.43 1 0.35 0.65 PITCH b 6X 0.25 B 2X J 0.10 C A 0.05 C BOTTOM VIEW NOTE 3 0.72 1.05 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 10 NTLJD3119C/D