NTLJD3182FZ

NTLJD3182FZ Power MOSFET and Schottky Diode Features −20 V, −4.0 A, mCoolt Single P−Channel & Schottky Barrier Diode, ESD • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent • • • • • • Thermal Conduction Lowest RDS(on) Solution in 2x2 mm Package Footprint Same as SC−88 Package Low Profile (< 0.8 mm) for Easy Fit in Thin Environments ESD Protected High Current Schottky Diode: 2 A Current Rating This is a Pb−Free Device http://onsemi.com P−CHANNEL MOSFET V(BR)DSS RDS(on) Max 100 mW @ −4.5 V −20 V 144 mW @ −2.5 V 200 mW @ −1.8 V −4.0 A ID Max Applications • Optimized for Battery and Load Management Applications in • • Portable Equipment Li−Ion Battery Charging and Protection Circuits DC−DC Buck Circuit Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State t≤5s Steady State t≤5s Steady State TA = 25°C TA = 85°C TA = 25°C PD TA = 25°C TA = 25°C TA = 85°C TA = 25°C PD IDM TJ, TSTG IS TL ID Symbol VDSS VGS ID SCHOTTKY DIODE VR Max 20 V S VF Max 0.47 V A IF Max 2.0 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Value −20 ±8.0 −3.2 −2.3 −4.0 1.5 2.3 −2.2 −1.6 0.71 −16 −55 to 150 −1.0 260 W A °C A °C A N/C D Pin 1 A W D Unit V V A G K SCHOTTKY DIODE P−CHANNEL MOSFET D K MARKING DIAGRAM WDFN6 CASE 506AN 1 2 JJMG G 3 6 5 4 tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) Parameter Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current JJ = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS 1 2 D 3 (Top View) 4 S K 6 5 K G SCHOTTKY MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol VRRM VR IF Value 30 30 2.0 Unit V V A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size, (30 mm2, 2 oz Cu). © Semiconductor Components Industries, LLC, 2008 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. December, 2008 − Rev. 0 1 Publication Order Number: NTLJD3180PZ/D NTLJD3182FZ THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – Steady State Min Pad (Note 4) Junction−to−Ambient – t ≤ 5 s (Note 3) Symbol RqJA RqJA RqJA Max 83 177 54 °C/W Unit 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm2, 2 oz Cu). MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On−Resistance VGS(TH) VGS(TH)/TJ RDS(on) VGS = −4.5 V, ID = −2.0 A VGS = −2.5 V, ID = −2.0 A VGS = −1.8 V, ID = −1.7 A Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Forward Recovery Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Time td(ON) tr td(OFF) tf VSD tRR ta tb QRR VGS = 0 V, dISD/dt = 100 A/ms, IS = −1.0 A TJ = 25°C TJ = 125°C VGS = −4.5 V, VDD = −5.0 V, ID = −2.0 A, RG = 2.0 W 6.6 9.0 14 12.5 −0.73 −0.62 23 13 10 10 nC ns −1.0 ns gFS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = −4.5 V, VDS = −10 V, ID = −2.0 A VDS = −16 V, ID = −2.0 A CHARGES, CAPACITANCES AND GATE RESISTANCE VGS = 0 V, f = 1.0 MHz, VDS = −10 V 450 90 62 5.2 0.3 0.84 1.5 7.8 nC pF VGS = VDS, ID = −250 mA −0.4 2.0 68 90 125 6.5 100 144 200 S −1.0 V mV/°C mW V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, ID = −250 mA ID = −250 mA, Ref to 25°C VDS = −16 V, VGS = 0 V TJ = 25°C TJ = 85°C −20 13 −1.0 −10 ±10 mA V mV/°C mA Symbol Test Conditions Min Typ Max Unit VDS = 0 V, VGS = ±8.0 V DRAIN−SOURCE DIODE CHARACTERISTICS VGS = 0 V, IS = −1.0 A V 5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTLJD3182FZ SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current Symbol VF IR Test Conditions IF = 100 mA IF = 1.0 A VR = 30 V VR = 20 V VR = 10 V Capacitance C VR = 5.0 V, f = 1.0 MHz Test Conditions IF = 100 mA IF = 1.0 A IR VR = 30 V VR = 20 V VR = 10 V Min Min Typ 0.34 0.47 17 3.0 2.0 38 Max 0.39 0.53 20 8.0 4.5 pF mA Unit V SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 85°C unless otherwise noted) Parameter Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current Symbol VF Typ 0.22 0.40 0.22 0.11 0.06 Max 0.35 0.50 2.5 1.6 1.2 mA Unit V SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 125°C unless otherwise noted) Parameter Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current Symbol VF IR Test Conditions IF = 100 mA IF = 1.0 A VR = 30 V VR = 20 V VR = 10 V Min Typ 0.20 0.40 2.0 1.1 0.63 Max 0.29 0.47 20 10.9 8.4 mA Unit V ORDERING INFORMATION Device Order Number NTLJD3182FZTAG NTLJD3182FZTBG Package Type WDFN6 (Pb−Free) WDFN6 (Pb−Free) Tape & Reel Size† 3000 / Tape & Reel 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. http://onsemi.com 3 NTLJD3182FZ TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 8 −ID, DRAIN CURRENT (AMPS) −2.2 V VGS = −2.5 V to −5 V TJ = 25°C −2.0 V −1.8 V −1.6 V −1.4 V −1.2 V 0 −1.0 V 0 1 2 3 4 5 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −ID, DRAIN CURRENT (AMPS) 8 VDS ≥ 5 V 6 6 4 4 2 2 TJ = 25°C TJ = 125°C TJ = −55°C 1.5 2 2.5 3 0 0 0.5 1 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.12 0.1 0.08 0.06 0.04 0.02 2.0 TJ = 25°C TJ = −55°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.32 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0 1.5 Figure 2. Transfer Characteristics VGS = −4.5 V TJ = 125°C TJ = 25°C VGS = −1.8 V VGS = −2.5 V VGS = −4.5 V 2.5 3.5 4.5 5.5 6.5 7.5 4.0 6.0 8.0 −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current and Gate Voltage 100000 VGS = 0 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.75 1.5 ID = −2 A VGS = −4.5 V −IDSS, LEAKAGE (nA) 10000 1.25 1.0 TJ = 150°C 1000 TJ = 125°C 0.75 0.5 −50 −25 0 25 50 75 100 125 150 100 0 4 8 12 16 20 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 4 NTLJD3182FZ TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) -V GS, GATE-TO-SOURCE VOLTAGE (VOLTS) 600 TJ = 25°C VGS = 0 V Ciss 5 QT 4 3 2 1 0 QGS QGD C, CAPACITANCE (pF) 400 VGS 200 Coss 0 0 Crss 5 10 15 DRAIN−TO−SOURCE VOLTAGE (VOLTS) 20 ID = −3.8 A TJ = 25°C 0 1 3 5 2 4 QG, TOTAL GATE CHARGE (nC) 6 Figure 7. Capacitance Variation Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge 1000 −IS, SOURCE CURRENT (AMPS) VDD = −5.0 V ID = −2.0 A VGS = −4.5 V t, TIME (ns) 100 td(off) tf tr 10 td(on) 2 VGS = 0 V TJ = 25°C 1.5 1 0.5 1 1 10 RG, GATE RESISTANCE (OHMS) 100 0 0 0.6 0.2 0.4 0.8 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) 1.0 Figure 9. Resistive Switching Time Variation versus Gate Resistance 100 −ID, DRAIN CURRENT (AMPS) Figure 10. Diode Forward Voltage versus Current 10 100 ms 1 ms 10 ms VGS = 20 V SINGLE PULSE TC = 25°C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 0.1 dc 0.01 1 10 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 100 Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 5 NTLJD3182FZ TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) EFFECTIVE TRANSIENT THERMAL RESISTANCE 1000 D = 0.5 0.2 0.1 10 0.05 0.02 1 0.01 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 t2 DUTY CYCLE, D = t1/t2 0.01 t, TIME (s) 0.1 1 t1 P(pk) *See Note 2 on Page 1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TA = P(pk) RqJA(t) 100 10 100 1000 Figure 12. Thermal Response http://onsemi.com 6 NTLJD3182FZ TYPICAL SCHOTTKY PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) IF , INSTANTANEOUS FORWARD CURRENT (AMPS) I F, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 10 1.0 TJ = 85°C TJ = 125°C TJ = 25°C TJ = −55°C 1.0 TJ = 85°C TJ = 125°C 0.1 0.1 0.2 0.3 0.4 TJ = 25°C 0.5 0.6 0.7 0.8 0.9 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM FORWARD VOLTAGE (VOLTS) Figure 13. Typical Forward Voltage Figure 14. Maximum Forward Voltage 1.0E+0 I R , REVERSE CURRENT (AMPS) 100E-3 10E-3 TJ = 125°C TJ = 85°C I R , MAXIMUM REVERSE CURRENT (AMPS) 1.0E+0 100E-3 TJ = 125°C 10E-3 1.0E-3 TJ = 85°C 1.0E-3 100E-6 10E-6 100E-6 10E-6 1.0E-6 0 10 20 30 TJ = 25°C TJ = 25°C 1.0E-6 0 10 20 30 100E-9 100E-9 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 15. Typical Reverse Current Figure 16. Maximum Reverse Current http://onsemi.com 7 NTLJD3182FZ PACKAGE DIMENSIONS WDFN6, 2x2 CASE 506AN−01 ISSUE D D A B EXPOSED Cu MOLD CMPD NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. DIM A A1 A3 b D D2 E E2 e F K L L1 MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 2.00 BSC 0.57 0.67 2.00 BSC 0.90 1.10 0.65 BSC 0.15 BSC 0.25 REF 0.20 0.30 --0.10 PLATING PIN ONE REFERENCE E 0.10 C 0.10 C TOP VIEW A3 A A1 C 0.10 C 0.08 C NOTE 4 DETAIL B SIDE VIEW 0.10 C A D2 L 1 3 D2 F 6X DETAIL A E2 0.10 C A K e 6 4 6X b 0.10 C A 0.05 C B 6X NOTE 3 BOTTOM VIEW mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative ÉÉ ÉÉ ÇÇÇ ÇÇ ÉÉÉ DETAIL B OPTIONAL CONSTRUCTIONS ÍÍÍ ÍÍÍ ÍÍÍ L L1 OPTIONAL CONSTRUCTIONS L DETAIL A SEATING PLANE SOLDERMASK DEFINED MOUNTING FOOTPRINT 1.74 0.77 1.10 0.47 2.30 B PACKAGE OUTLINE 2X B 1 0.35 0.65 PITCH DIMENSIONS: MILLIMETERS http://onsemi.com 8 NTLJD3182FZ/D