NTLJF4156N

L1 Vin C1 ON/OFF GND Vin C1 Vin GND C1 ON/OFF ON/OFF D1 C2 Vout Q1 FETKY GND L1 Vout FETKY Q1 Q1 D1 D1 C2 Vout C2 GND R1 Typical Uses for FETKY® Devices (MOSFET + Schottky Co-packaged) Introduction In consumer electronic circuits, Schottky diodes are often seen working with power MOSFETs to implement system level power solutions. There are different reasons for integrating a Schottky diode with a MOSFET. Typical examples of these circuits include reverse protection, asynchronous DC/DC conversion, free-wheeling rectification, switching efficiency improvement, and more. Protection Circuit GND GND FETKY The Schottky diode actually provides a by-pass channel and keeps D1 reverse voltage across the MOSFET to less than a P-N diode drop. Vin Vout C1 GND Vin C1 ON/OFF GND ON/OFF FETKY Q1 D1 C2 R1 GND Vout E xamples DC-DC Buck Circuit A MOSFET plus a Schottky diode is the most typical buck converter circuit seen throughout the portable electronics market. The Schottky diode is used as a rectifying element closing the current loop after the main switch turns off. FETKY L1 Vin C1 ON/OFF GND Vin D1 C2 Vout Q1 FETKY D1 C2 R1 GND Protection Circuit Switching Efficiency Improvement Vin Vout Q1 A Schottky diode can be placed in parallel L1 C2 synchronous with the R1 C1 Vin Vout rectifying MOSFET ON/OFF efficiency. It conducts during the deadto improve FETKY time between the on/off cycle of the two power MOSFETs preventing GND the body diode of the bottom MOSFET from turning on andGND storing Q1 charge during the dead-time. This approach can improve efficiency D1 C1 C2 as much as 2%. L1 Vin GND Vout Q1 FETKY DC-DC Buck Circuit FETKY Q1 D1 GND L1 GND Vout C1 C2 Li-Ion Charging Circuit FETKY D1 C1 C2 The FETKY device can be used Q1charging elements for multiple as ON/OFF D1 power sources such as car battery charger, wall charger, or USB Vin Vout connection. A Schottky is preferred over a standard diodeGND because GND of the lower Vf rON/OFF ating resulting in minimum power consumption during Q1 C2 R1 normal C1 operations. GND Vin C1 GND Vin C1 ON/OFF GND Vin ON/OFF GND GND Switching Circuit FETKY D1 Portfolio Please see our lastest portfolio of FETKY devices on the reverse side of this card. For additional information on our FETKY, and other MOSFET portfolio devices, please visit our website at w ww.onsemi.com. GND Vout C2 R1 GND Q1 FETKY D1 Li-Ion Charging Circuit Q1 FETKY D1 C2 Vout FETKY is a registered trademark of International Rectifier. R1 GND Vout Orderable FETKY Devices from ON Semiconductor mCool™ Products in WDFN (2 x 2 mm) Device (Max Rating) NTLJF3117P NTLJF4156N NTLJF3118N* *Coming soon. Polarity P-Channel N-Channel N-Channel BVDSS -20 V 30 V 20 V RDS(on) at VGS = 4.5 V 100 mW 70 mW 60 mW Vf If = 1 A 0.47 V 0.47 V 0.365 V Ir Vr = 10 V 1200 mA 1200 mA 1200 mA Pd 1.5 W 1.5 W 1.5 W ChipFET™ Package (3 x 2 mm) Device (Max Rating) NTHD3100F NTHD4P02 NTHD4N02 Polarity P-Channel P-Channel N-Channel BVDSS -20 V -20 V 20 V RDS(on) at VGS = 4.5 V 80 mW 155 mW 80 mW Vf If = 1 A 0.575 V 0.575 V 0.365 V Ir Vr = 10 V 1 mA 1 mA 750 mA Pd 1.1 W 1.1 W 0.91 W SO-8 Dual Package (5 x 6 mm) Device (Max Rating) NTMSD3P303 NTMSD3P102 NTMSD6N303 Polarity P-Channel P-Channel N-Channel BVDSS -30 V -20 V 20 V RDS(on) at VGS = 4.5 V 85 mW 125 mW 40 mW Vf If = 1 A 0.42 V 0.58 V 0.42 V Ir Vr = 10 V 250 mA 500 mA 250 mA Pd 2.0 W 2.0 W 2.0 W mCool is a trademark of Semiconductor Components Industries, LLC. FETKY is a registered trademark of International Rectifier. ChipFET is a trademark of Vishay Siliconix. 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