NTLJS4149PTAG

NTLJS4149P Power MOSFET Features -30 V, -5.9 A, mCoolt Single P-Channel, 2x2 mm, WDFN Package • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • Conduction 2x2 mm Footprint Same as SC-88 Package Low Profile (< 0.8 mm) for Easy Fit in Thin Environments This is a Pb-Free Device V(BR)DSS -30 V http://onsemi.com RDS(on) MAX 62 mW @ -4.5 V 75 mW @ -2.5 V S Applications • Li Ion Battery Linear Mode Charging for Portable Power Management in Noisy Environment • DC-DC Conversion Buck/Boost Circuits • High Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t≤5s Power Dissipation (Note 1) Steady State t≤5s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current TA = 25°C Steady State TA = 85°C TA = 25°C ID PD IDM TJ, TSTG IS TL TA = 25°C TA = 85°C TA = 25°C TA = 25°C PD 3.2 -2.7 -2.0 0.7 -18 -55 to 150 -1.5 260 W A °C D A °C G D A ID Symbol VDSS VGS Value -30 ±12 -4.5 -3.3 -5.9 1.9 W Pin 1 Unit V V A S G D P-CHANNEL MOSFET D WDFN6 CASE 506AP MARKING DIAGRAM 1 2 J9MG G 3 6 5 4 J9 = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) PIN CONNECTIONS 1 2 3 S (Top View) 6 5 4 D D S tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) D Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size. ORDERING INFORMATION Device NTLJS4149PTAG NTLJS4149PTBG Package WDFN6 (Pb-Free) WDFN6 (Pb-Free) Shipping† 3000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 1 July, 2007 - Rev. 0 Publication Order Number: NTLJS4149P/D NTLJS4149P THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient – Steady State (Note 3) Junction-to-Ambient – t ≤ 5 s (Note 3) Junction-to-Ambient – Steady State Min Pad (Note 4) Symbol RqJA RqJA RqJA Max 65 38 180 Unit °C/W 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface Mounted on FR4 Board using the minimum recommended pad size. MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On-Resistance VGS(TH) VGS(TH)/TJ RDS(on) VGS = -4.5 V, ID = -2.0 A VGS = -2.5 V, ID = -2.0 A VGS = -4.5 V, ID = -4.5 A Forward Transconductance gFS VDS = -6.0 V, ID = -3.0 A CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf TJ = 25°C TJ = 85°C VGS = -4.5 V, VDS = -15 V, ID = -2.0 A, RG = 2.0 W 6.9 11 60 55 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = -4.5 V, VDS = -15 V, ID = -2.0 A 960 VGS = 0 V, f = 1.0 MHz, VDS = -15 V 130 80 9.9 0.8 1.45 2.75 15 nC pF VGS = VDS, ID = -250 mA -0.4 3.1 43 56 43 10 62 75 62 S -1.0 V mV/°C mW V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, ID = -250 mA ID = -250 mA, Ref to 25°C TJ = 25°C TJ = 85°C -30 -1.8 -0.1 -1.0 -1.0 -10 ±0.1 mA V mV/°C mA Symbol Test Conditions Min Typ Max Unit VDS = -24 V, VGS = 0 V VDS = 0 V, VGS = ±12 V DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD tRR ta tb QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = -1.5 A VGS = 0 V, IS = -1.5 A -0.75 -0.65 35 10 25 0.016 mC 60 ns -1.2 V 5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTLJS4149P TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 10 VGS = -1.9 V to -7 V -ID, DRAIN CURRENT (AMPS) 8 TJ = 25°C -1.8 V -ID, DRAIN CURRENT (AMPS) 8 -1.7 V -1.6 V -1.5 V -1.4 V 2 0 0 1 2 3 4 5 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) -1.3 V -1.2 V -1.1 V 10 VDS ≥ -10 V 6 6 4 4 TJ = 100°C 2 0 0.5 TJ = 25°C TJ = -55°C 1 1.5 2 2.5 3 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.2 ID = -2.0 A TJ = 25°C 0.15 0.07 TJ = 25°C 0.06 VGS = -2.5 V 0.05 0.1 0.05 0.04 VGS = -4.5 V 0 1 2 3 4 5 6 0.03 1 2 3 4 5 6 7 8 9 10 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) -ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Gate-to-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 ID = -2.0 A VGS = -4.5 V -IDSS, LEAKAGE (nA) 1.4 10000 100000 Figure 4. On-Resistance versus Drain Current and Gate Voltage VGS = 0 V 1.2 TJ = 150°C 1.0 1000 TJ = 100°C 100 0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (°C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 NTLJS4149P TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) -V GS, GATE-TO-SOURCE VOLTAGE (VOLTS) 2400 VDS = 0 V Ciss VGS = 0 V TJ = 25°C 5 QT 4 VDS 3 VGS 12 QGS 16 20 -V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) C, CAPACITANCE (pF) 1800 1200 Crss 600 Coss 0 10 5 0 5 -VGS -VDS 10 15 20 25 30 2 QGD 8 1 0 0 2 ID = -4.5 A TJ = 25°C 6 4 8 QG, TOTAL GATE CHARGE (nC) 4 0 10 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 -Is, SOURCE CURRENT (AMPS) VDD = -24 V ID = -2.0 A VGS = -4.5 V t, TIME (ns) 100 Figure 8. Gate-To-Source and Drain-To-Source Voltage versus Total Charge 8 7 6 5 4 3 2 1 0 0.2 0.4 0.8 0.6 1.0 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 1.2 td(off) tf tr VGS = 0 V TJ = 25°C 10 td(on) 1 1 10 RG, GATE RESISTANCE (OHMS) 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 NTLJS4149P PACKAGE DIMENSIONS WDFN6 2x2 CASE 506AP-01 ISSUE B D A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. CENTER TERMINAL LEAD IS OPTIONAL. TERMINAL LEAD IS CONNECTED TO TERMINAL LEAD # 4. 6. PINS 1, 2, 5 AND 6 ARE TIED TO THE FLAG. DIM A A1 A3 b b1 D D2 E E2 e K L L2 J J1 MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 0.51 0.61 2.00 BSC 1.00 1.20 2.00 BSC 1.10 1.30 0.65 BSC 0.15 REF 0.20 0.30 0.20 0.30 0.27 REF 0.65 REF PIN ONE REFERENCE 2X 0.10 C 2X 0.10 C 0.10 C 7X 0.08 C 6X L 1 3 E2 NOTE 5 K mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT:  Literature Distribution Center for ON Semiconductor  P.O. Box 5163, Denver, Colorado 80217 USA  Phone : 303-675-2175 or 800-344-3860 Toll Free USA/Canada  Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada  Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free  USA/Canada Europe, Middle East and Africa Technical Support:  Phone: 421 33 790 2910 Japan Customer Focus Center  Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative ÍÍÍ ÍÍÍ ÍÍÍ A3 A1 D2 4X E A C e L2 b1 6X SEATING PLANE SOLDERMASK DEFINED MOUNTING FOOTPRINT* 2.30 0.10 C A 0.05 C B 1.10 6X 6X 0.43 1 1.25 0.35 6 4 b 6X 0.60 0.35 J J1 BOTTOM VIEW 0.10 C A 0.05 C B NOTE 3 0.34 0.66 DIMENSIONS: MILLIMETERS 0.65 PITCH *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NTLJS4149P/D