MOSFET - Power, Single
P-Channel, WDFN6
-20 V
NTLJS7D2P02P8Z
Features
• Small Footprint (4 mm2) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS
Compliant
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RDS(on) MAX
V(BR)DSS
Applications
−20 V
• Battery Management
• Protection
• Power Load Switch
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±8.0
V
ID
−13.1
A
Steady
State
Power Dissipation
RqJA (Notes 1, 3)
Continuous Drain Current RqJA (Notes 2, 3)
Steady
State
Power Dissipation
RqJA (Notes 2, 3)
Pulsed Drain Current
TA = 25°C
TA = 85°C
−9.5
TA = 25°C
PD
2.40
W
TA = 25°C
ID
−7.9
A
TA = 85°C
PD
0.86
TA = 25°C, tp = 10 ms
IDM
52
A
TJ, Tstg
−55 to
+150
°C
TL
260
°C
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
D
P−CHANNEL MOSFET
MARKING
DIAGRAM
W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
WDFN6 (2.05x2.05)
CASE 483AV
YW
ZZ
A
7D2
YWZZ
A7D2
= Date Code
= Assembly Lot Code
= Assembly Site Code
= Specific Device Code
ORDERING INFORMATION
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
G
−5.7
TA = 25°C
Operating Junction and Storage Temperature
Range
−13.1 A
S
Symbol
Continuous Drain Current RqJA (Notes 1, 3)
11 mW @ −2.5 V
ELECTRICAL CONNECTION
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
9 mW @ −4.5 V
ID MAX
Symbol
Value
Unit
Junction−to−Ambient − Steady State (Note 1)
RqJA
52
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
145
See detailed ordering, marking and shipping information in the
package dimensions section on page 4 of this data sheet.
1. Surface−mounted on FR4 board using 1 in2 pad size, 2 oz. Cu pad.
2. Surface−mounted on FR4 board using minimum pad size, 2 oz. Cu pad.
3. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
Actual continuous current will be limited by thermal & electro−mechanical
application board design. RqCA is determined by the user’s board design.
© Semiconductor Components Industries, LLC, 2018
August, 2020 − Rev. 0
1
Publication Order Number:
NTLJS7D2P02P8Z/D
NTLJS7D2P02P8Z
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = −250 mA
−20
Drain−to−Source Breakdown
Voltage Temperature Coefficient
V(BR)DSS/
TJ
ID = −250 mA, ref to 25°C
Zero Gate Voltage Drain Current
IDSS
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Gate−to−Source Leakage Current
VGS = 0 V,
VDS = −16 V
V
14.4
mV/°C
TJ = 25°C
−1
TJ = 125°C
−10
mA
IGSS
VDS = 0 V, VGS = ±8.0 V
VGS(TH)
VGS = VDS, ID = 250 mA
VGS/TJ
ID = −250 mA, ref to 25°C
−3.3
RDS(on)
VGS = −4.5 V, ID = −10 A
7.1
9.0
VGS = −2.5 V, ID = −5 A
9.1
11
VDS = −5 V, ID = −10 A
59
S
2790
pF
±10
mA
−1.5
V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
gFS
−0.4
mV/°C
mW
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
VGS = 0 V, VDS = −10 V,
f = 1.0 MHz
412
Crss
369
Total Gate Charge
QG(TOT)
26.7
nC
Threshold Gate Charge
QG(TH)
1.4
nC
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
VGS = −4.5 V, VDS = −10 V,
ID = −10 A
3.7
6.7
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
9.3
tr
25.1
td(off)
VGS = −4.5 V, VDD = −15 V,
ID = −10 A, RG = 6 W
tf
ns
224
130
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Reverse Recovery Charge
QRR
VGS = 0 V,
IS = −10 A
TJ = 25°C
0.74
TJ = 125°C
0.65
VGS = 0 V, dlS/dt = −100 A/ms,
IS = −10 A
1.2
V
20
ns
5.4
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTLJS7D2P02P8Z
TYPICAL CHARACTERISTICS
14
VGS = −10 V to −1.4 V
−ID, DRAIN CURRENT (A)
12
10
8
−1.2 V
6
4
2
10
8
TJ = 25°C
6
4
0
2
1
0
3
Figure 2. Transfer Characteristics
20
15
10
5
1.5
2.0
3.0
2.5
3.5
4.0
4.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
14
TJ = 25°C
VGS = −1.8 V
12
10
VGS = −2.5 V
8
VGS = −4.5 V
6
4
4
−IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
100K
VGS = −4.5 V
ID = −10 A
1.2
1.0
0.8
0.6
0
25
50
75
100
125
6
7
8
10
9
12
11
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.6
−25
5
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage (V)
0.4
−50
3
2
Figure 1. On−Region Characteristics
TJ = 25°C
ID = −10 A
1.4
TJ = −55°C
1
0
−VGS, GATE−TO−SOURCE VOLTAGE (V)
25
0
1.0
TJ = 125°C
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
30
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (mW)
12
2
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
−ID, DRAIN CURRENT (A)
14
150
TJ = 150°C
10K
TJ = 125°C
1K
TJ = 85°C
100
10
1
TJ = 25°C
5
7
9
11
13
15
17
19
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTLJS7D2P02P8Z
TYPICAL CHARACTERISTICS
−VGS, GATE−TO−SOURCE VOLTAGE (V)
10K
C, CAPACITANCE (pF)
CISS
1K
COSS
CRSS
100
f = 1 MHz
VGS = 0 V
TJ = 25°C
10
1
0
5
10
15
20
10
VDS = −10 V
ID = −10 A
TJ = 25°C
9
8
7
6
5
4
3 QGS
QGD
2
1
0
0
20
10
30
40
50
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
60
1K
VGS = 0 V
IS, SOURCE CURRENT (A)
t, TIME (ns)
td(off)
tf
tr
100
td(on)
10
1
VGS = −4.5 V
VDS = −15 V
ID = −10 A
10
1
10
TJ = 25°C
TJ = 125°C
TJ = −55°C
1
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
DEVICE ORDERING INFORMATION
Device
NTLJS7D2P02P8ZTAG
Package
Shipping†
WDFN6
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 2.05X2.05, 0.65P
CASE 483AV
ISSUE A
DOCUMENT NUMBER:
DESCRIPTION:
98AON13671G
WDFN6 2.05X2.05, 0.65P
DATE 02 APR 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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