NTMC1300R2
Power MOSFET
3 Amps, 30 Volts
Complementary SO−8 Dual
Features
• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Miniature SO−8 Surface Mount Package
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3 AMPERES, 30 VOLTS
73 mW @ VGS = 10 V (Typ)
(N−Channel)
100 mW @ VGS = 10 V (Typ)
(P−Channel)
Applications
• DC−DC Converters
• Power Management in Portable and Battery Powered Products, i.e.:
•
Computers, Printers, Cellular and Cordless Phones
Low Voltage Motor Controls in Mass Storage Products, i.e.: Disk
Drives, Tape Drives
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage − Continuous
VGS
±20
V
Drain Current − Continuous (Note 1)
N−Channel
P−Channel
ID
Drain Current − Continuous (Note 2)
N−Channel
P−Channel
ID
Drain Current − Continuous (Note 3)
N−Channel
P−Channel
ID
PD
2.0
W
TJ, Tstg
−65 to
150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 10 Vdc,
IL = 2.45 Apk, L = 25 mH, RG = 25 W)
EAS
75
mJ
Thermal Resistance
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Junction−to−Ambient (Note 3)
RqJA
Apk
8.5
7.0
SO−8, Dual
CASE 751
STYLE 11
8
EC1300
LYWW
1
EC1300
L
Y
WW
= Device Code
= Location Code
= Year
= Work Week
PIN ASSIGNMENT
TL
°C/W
178.5
106
62.5
Source−1
1
8
Drain−1
Gate−1
2
7
Drain−1
Source−2
3
6
Drain−2
4
5
Drain−2
Gate−2
260
°C
1. When surface mounted to an FR−4 board using minimum recommended pad
size, (Cu Area 0.412 in2), Steady State.
2. When surface mounted to an FR−4 board using 1″ pad size, (Cu Area
0.412 in2), Steady State.
3. When surface mounted to an FR−4 board using 1″ pad size, (Cu Area
0.412 in2), T ≤ 10 Seconds.
August, 2006 − Rev. 1
MARKING
DIAGRAM
Adc
3.6
3.0
Total Power Dissipation @ TA = 25°C
(Note 3)
© Semiconductor Components Industries, LLC, 2006
S2
S1
Adc
2.8
2.3
IDM
Maximum Lead Temperature for
Soldering Purposes for 10 Seconds
G2
G1
Adc
2.2
1.8
Drain Current − Pulsed
N−Channel
P−Channel
Operating and Storage
Temperature Range
D2
D1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
P−Channel
N−Channel
1
(Top View)
ORDERING INFORMATION
Device
NTMC1300R2
Package
Shipping
SO−8
2500/Tape & Reel
Publication Order Number:
NTMC1300R2/D
NTMC1300R2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
V(BR)DSS
−
30
−
−
Vdc
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 30 Vdc, TJ = 25°C)
IDSS
(N)
(P)
−
−
−
−
1.0
1.0
μAdc
Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
−
−
−
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
VGS(th)
(N)
(P)
1.0
1.0
1.8
1.6
2.2
2.2
Vdc
Static Drain−to−Source On−State Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
RDS(on)
(N)
(P)
−
−
0.073
0.100
0.090
0.140
W
Static Drain−to−Source On−State Resistance
(VGS = 4.5 Vdc, ID = 1.5 Adc)
RDS(on)
(N)
(P)
−
−
0.093
0.150
0.130
0.200
W
gFS
(N)
(P)
−
−
4.0
4.0
−
−
mhos
Ciss
(N)
(P)
−
−
190
325
300
550
pF
Coss
(N)
(P)
−
−
75
110
150
175
Crss
(N)
(P)
−
−
30
40
60
75
td(on)
(N)
(P)
−
−
10
9.0
20
20
tr
(N)
(P)
−
−
7.0
11
15
20
td(off)
(N)
(P)
−
−
20
25
35
40
tf
(N)
(P)
−
−
5.0
13
15
25
QT
(N)
(P)
−
−
3.0
10
5.0
15
Qgs
(N)
(P)
−
−
1.0
1.5
−
−
Qgd
(N)
(P)
−
−
1.5
4.0
−
−
VSD
(N)
(P)
−
−
0.85
0.81
1.1
1.1
Vdc
trr
(N)
(P)
−
−
11
20
−
−
ns
ta
(N)
(P)
−
−
8.0
16
−
−
tb
(N)
(P)
−
−
3.0
4.0
−
−
Qrr
(N)
(P)
−
−
0.005
0.020
−
−
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 μA)
ON CHARACTERISTICS (Notes 4 & 6)
Forward Transconductance
(VDS = 3.0 Vdc, ID = 1.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 20 Vdc,
VGS = 0 Vdc,
f = 1.0 MHz)
Output Capacitance
Reverse Transfer
Capacitance
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
(VDD = 24 Vdc,
ID = 2.0 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω)
Turn−Off Delay Time
Fall Time
Gate Charge
(VDS = 16 Vdc,
ID = 2.0 Adc,
VGS = 4.5 Vdc)
ns
nC
BODY−DRAIN DIODE RATINGS (Note 6)
Diode Forward On−Voltage
(IS = 1.7 Adc,
VGS = 0 Vdc)
Reverse Recovery Time
(IS = 2.0 Adc,
VGS = 0 Vdc,
dIS/dt = 100 A/μs)
Reverse Recovery Stored
Charge
4. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
6. Negative signs for P−Channel device omitted for clarity.
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2
μC
NTMC1300R2
TYPICAL ELECTRICAL CHARACTERISTICS
N−Channel
4.6 V
12
TJ = 25°C
4.2 V
4.8 V
9
4.0 V
5.2 V
6.5 V
8.0 V
6
−ID, DRAIN CURRENT (AMPS)
I D, DRAIN CURRENT (AMPS)
12
P−Channel
3.6 V
10 V
3.2 V
3
0
VGS = 2.6 V
0
2.8 V
7
8
9
1
2
3
4
5
6
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
TJ = −55°C
TJ = 100°C
12
TJ = 25°C
8
4
5
6
7
3
4
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
1
2
−3.6 V
−3.2 V
3
VGS = −2.6 V
0
0.15
0.125
0.10
0.075
0.05
5
7
9
3
4
6
8
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
10
16
TJ = −55°C
TJ = 25°C
TJ = 100°C
12
8
4
1
5
6
7
2
3
4
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
8
Figure 4. Transfer Characteristics
ID = 3.0 A
TJ = 25°C
2
−2.8 V
1
2
3
4
5
6
7
8
9
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
VDS ≥ −10 V
0
8
0.20
0.025
−4.0 V
6
Figure 3. Transfer Characteristics
0.175
−4.2 V
−8.0 V
20
16
TJ = 25°C
Figure 2. On−Region Characteristics
20
VDS ≥ 10 V
−4.6 V
−5.2 V
−6.5 V
Figure 1. On−Region Characteristics
0
−4.8 V
9
0
10
−10 V
0.25
ID = −3.0 A
TJ = 25°C
0.225
0.20
0.175
0.15
0.125
0.10
0.075
0.05
2
Figure 5. On−Resistance versus
Gate−To−Source Voltage
3
4
6
8
5
7
9
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. On−Resistance versus
Gate−To−Source Voltage
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3
10
NTMC1300R2
N−Channel
0.20
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TYPICAL ELECTRICAL CHARACTERISTICS
TJ = 25°C
VGS = 4.5 V
0.16
0.12
VGS = 10 V
0.08
0.04
2
4
6
14
16
8
10
12
ID, DRAIN CURRENT (AMPS)
18
20
P−Channel
0.32
0.20
0.16
VGS = −10 V
0.12
0.08
0.04
2
4
8
10
12
14
16
18
Figure 8. On−Resistance versus Drain Current
and Gate Voltage
1.6
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
ID = 3.0 A
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
−50
−25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
ID = −3.0 A
VGS = −10 V
1.4
1.2
1.0
0.8
0.6
−50
150
Figure 9. On−Resistance Variation with
Temperature
−25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
150
Figure 10. On−Resistance Variation with
Temperature
1000
1000
VGS = 0 V
TJ = 150°C
−IDSS, LEAKAGE (nA)
VGS = 0 V
IDSS, LEAKAGE (nA)
6
−ID, DRAIN CURRENT (AMPS)
1.6
100
10
TJ = 100°C
1
VGS = −4.5 V
0.24
Figure 7. On−Resistance versus Drain Current
and Gate Voltage
RDS(on) , DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
TJ = 25°C
0.28
0
15
20
5
10
25
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
10
1
30
TJ = 150°C
TJ = 100°C
0
Figure 11. Drain−To−Source Leakage
Current versus Voltage
15
20
5
10
25
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 12. Drain−To−Source Leakage
Current versus Voltage
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4
30
NTMC1300R2
N−Channel
VDS = 0 V
VGS = 0 V
TJ = 25°C
400
Crss
300
200
Ciss
100
Coss
10
5
0
VGS VDS
5
10
15
TJ = 25°C
Crss
600
500
400
Ciss
300
200
100
Crss
0
Ciss
700
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
Ciss
P−Channel
800
0
20
VDS = 0 V VGS = 0 V
10
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
5
16
VGS
Qgd
2
ID = 3 A
TJ = 25°C
0.5
0
1
1.5
2
2.5
3
8
2
0
3.5
3
Qg, TOTAL GATE CHARGE (nC)
30
20
18
0
16
VGS
Qgs
14
Qgd
12
10
8
VDS
0
1
2
3
4
6
ID = −3 A
TJ = 25°C
1
6
5
7
8
9
4
10
2
0
Qg, TOTAL GATE CHARGE (nC)
Figure 16. Gate−To−Source and
Drain−To−Source Voltage versus Total Charge
100
100
VDD = 24 V
ID = 1.0 A
VGS = 10 V
td(off)
tf
td(on)
10
tr
1
td (off)
tf
VDD = −24 V
ID = −1.0 A
VGS = −10 V
t, TIME (ns)
t, TIME (ns)
25
20
QT
Figure 15. Gate−To−Source and
Drain−To−Source Voltage versus Total Charge
1
15
4
12
4
1
0
V DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
VGS , GATE−TO−SOURCE VOLTAGE (VOLTS)
3
5
20
VDS
Qgs
10
Figure 14. Capacitance Variation
QT
4
0
5
−VGS −VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
Figure 13. Capacitance Variation
5
Coss
Crss
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
500
10
1
100
tr
td (on)
10
1
RG, GATE RESISTANCE (OHMS)
10
RG, GATE RESISTANCE (OHMS)
Figure 17. Resistive Switching Time
Variation versus Gate Resistance
Figure 18. Resistive Switching Time
Variation versus Gate Resistance
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5
100
NTMC1300R2
N−Channel
P−Channel
−IS, SOURCE CURRENT (AMPS)
10
VGS = 0 V
TJ = 25°C
8
6
4
2
0
0.4
0.6
0.8
VGS = 0 V
TJ = 25°C
8
6
4
2
0
1.2
1.0
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 19. Diode Forward Voltage versus Current
Figure 20. Diode Forward Voltage versus Current
di/dt = 300 A/μs
Standard Cell Density
trr
High Cell Density
trr
tb
ta
I S , SOURCE CURRENT
IS, SOURCE CURRENT (AMPS)
10
t, TIME
Figure 21. Reverse Recovery Time (trr)
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6
NTMC1300R2
INFORMATION FOR USING THE SO−8 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to ensure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self−align when
subjected to a solder reflow process.
0.060
1.52
0.275
7.0
0.155
4.0
0.024
0.6
0.050
1.270
inches
mm
SOLDERING PRECAUTIONS
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
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7
NTMC1300R2
TYPICAL SOLDER HEATING PROFILE
temperature versus time. The line on the graph shows the
actual temperature that might be experienced on the surface
of a test board at or near a central solder joint. The two
profiles are based on a high density and a low density
board. The Vitronics SMD310 convection/infrared reflow
soldering system was used to generate this profile. The type
of solder used was 62/36/2 Tin Lead Silver with a melting
point between 177 −189°C. When this type of furnace is
used for solder reflow work, the circuit boards and solder
joints tend to heat first. The components on the board are
then heated by conduction. The circuit board, because it has
a large surface area, absorbs the thermal energy more
efficiently, then distributes this energy to the components.
Because of this effect, the main body of a component may
be up to 30 degrees cooler than the adjacent solder joints.
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 22 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems, but it is a good starting point. Factors
that can affect the profile include the type of soldering
system in use, density and types of components on the
board, type of solder used, and the type of board or
substrate material being used. This profile shows
STEP 1
PREHEAT
ZONE 1
“RAMP”
200°C
STEP 2
STEP 3
VENT
HEATING
“SOAK” ZONES 2 & 5
“RAMP”
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
STEP 4
HEATING
ZONES 3 & 6
“SOAK”
160°C
STEP 5
STEP 6
STEP 7
HEATING
VENT
COOLING
ZONES 4 & 7
205° TO 219°C
“SPIKE”
PEAK AT
170°C
SOLDER
JOINT
150°C
150°C
100°C
140°C
100°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
5°C
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 22. Typical Solder Heating Profile
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8
NTMC1300R2
PACKAGE DIMENSIONS
SO−8
CASE 751−07
ISSUE AA
−X−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER
SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN
EXCESS OF THE D DIMENSION AT MAXIMUM
MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
A
8
5
S
B
1
0.25 (0.010)
M
Y
M
4
−Y−
K
G
C
N
X 45 _
SEATING
PLANE
−Z−
0.10 (0.004)
H
D
0.25 (0.010)
M
Z Y
S
X
M
J
S
DIM
A
B
C
D
G
H
J
K
M
N
S
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8_
0.25
0.50
5.80
6.20
STYLE 11:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0_
8_
0.010
0.020
0.228
0.244
SOURCE 1
GATE 1
SOURCE 2
GATE 2
DRAIN 2
DRAIN 2
DRAIN 1
DRAIN 1
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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NTMC1300R2/D
