NTMD4884NF

NTMD4884NF Power MOSFET and Schottky Diode Features 30 V, 5.7 A, Single N-Channel with 30 V, 2.8 A, Schottky Barrier Diode • FETKYt Surface Mount Package Saves Board Space • Independent Pin-Out for MOSFET and Schottky Allowing for • • • Design Flexibility Low RDS(on) MOSFET and Low VF Schottky to Minimize Conduction Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb-Free Device V(BR)DSS 30 V http://onsemi.com N-CHANNEL MOSFET RDS(on) Max 48 mW @ 10 V 70 mW @ 4.5 V ID Max 5.7 A Applications • Disk Drives • DC-DC Converters • Printers MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Rating Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJA t < 10 s (Note 1) Power Dissipation RqJA t < 10 s (Note 1) Pulsed Drain Current TA = 25°C TA = 70°C TA = 25°C TA = 25°C Steady State TA = 70°C TA = 25°C TA = 25°C TA = 70°C TA = 25°C TA = 25°C, tp = 10 ms PD IDM TJ, TSTG IS TL PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 4.7 3.8 1.6 3.3 2.6 0.77 5.7 4.5 2.3 19 -55 to +150 1.3 260 W A °C A °C W A W A Unit V V A SCHOTTKY DIODE VR Max 30 V VF Max 0.5 V IF Max 2.8 A S A G D N-Channel MOSFET C Schottky Diode MARKING DIAGRAM & PIN ASSIGNMENT CCDD 8 8 1 SOIC-8 CASE 751 STYLE 18 1 AASG 4884NF AYWW G Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 4884NF = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package SCHOTTKY MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, (Note 1) Steady State t < 10 s VRRM VR IF 30 30 2.8 4.1 V V A NTMD4884NFR2G SOIC-8 2500/Tape & Reel (Pb-Free) ORDERING INFORMATION Device Package Shipping† †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 1 March, 2008 - Rev. 0 Publication Order Number: NTMD4884NF/D NTMD4884NF THERMAL RESISTANCE MAXIMUM RATINGS Parameter MOSFET & Schottky Junction-to-Ambient – Steady State (Note 1) Junction-to-Ambient – t ≤10 s Steady State (Note 1) Junction-to-FOOT (Drain) Equivalent to RqJC Junction-to-Ambient – Steady State (Note 2) 1. Surface-mounted on FR4 board using 1 inch sq pad size, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. Symbol RqJA RqJA RqJF RqJA Max 79 54 50 163 °C/W Unit ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance Forward Transconductance Gate Resistance VGS(TH) VGS(TH)/TJ RDS(on) gFS RG VGS = 10 V VGS = 4.5 V ID = 4.0 A ID = 3.5 A VGS = VDS, ID = 250 mA 1.0 5.0 34 50 10 2.4 3.6 48 70 2.5 V mV/°C mW S W V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, VDS = 24 V TJ = 25°C TJ = 125°C VGS = 0 V, ID = 250 mA 30 24 1.0 20 ±100 V mV/°C mA nA Symbol Test Condition Min Typ Max Unit VDS = 0 V, VGS = ±20 V VDS = 5.0 V, ID = 4.0 A CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-TO-SOURCE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Time VSD tRR ta tb QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 4.0 A VGS = 0 V ID = 1.3 A TJ = 25°C TJ = 125°C 0.8 0.65 9.2 6.0 3.2 3.3 nC 20 ns 1.0 V td(ON) tr td(OFF) tf VGS = 10 V, VDS = 15 V, ID = 1.0 A, RG = 6.0 W 6.0 6.5 14 1.4 12 13 26 7.0 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) VGS = 10 V, VDS = 15 V, ID = 4.0 A VGS = 4.5 V, VDS = 15 V, ID = 4.0 A 280 VGS = 0 V, f = 1.0 MHz, VDS = 15 V 60 32 2.8 0.4 1.2 1.0 5.6 8.0 nC 360 80 42 4.2 nC pF http://onsemi.com 2 NTMD4884NF ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Condition Min Typ Max Unit SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Maximum Instantaneous Forward Voltage Symbol VF Test Conditions IF = 0.1 A IF = 2.0 A Maximum Instantaneous Reverse Current IR VR = 10 V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C Min Typ 0.26 0.11 0.4 0.35 0.020 10 Max 0.28 0.13 0.50 0.46 0.25 37 mA Unit V 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. TYPICAL CHARACTERISTICS 15 10 V 5V ID, DRAIN CURRENT (A) 12 VGS = 4.0 V 4.2 V 4.5 V TJ = 25°C 15 3.8 V ID, DRAIN CURRENT (A) 12 VDS ≥ 10 V 3.6 V 9 3.4 V 6 3.2 V 3 0 0 1 2 3 2.6 V 4 3.0 V 2.8 V 9 6 TJ = 125°C TJ = 25°C TJ = -55°C 0 1 2 3 4 5 VGS, GATE-TO-SOURCE VOLTAGE (V) 3 0 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.08 0.07 0.06 0.05 0.04 0.03 0.02 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (V) ID = 4 A TJ = 25°C 0.06 Figure 2. Transfer Characteristics TJ = 25°C VGS = 4.5 V 0.05 0.04 VGS = 10 V 0.03 0.02 2 3 4 5 6 7 8 9 10 11 12 13 14 15 ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage http://onsemi.com 3 NTMD4884NF TYPICAL CHARACTERISTICS 1.500 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.375 1.250 1.125 1.000 0.875 0.750 -50 10 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) ID = 4 A VGS = 10 V IDSS, LEAKAGE (nA) 1000 10,000 VGS = 0 V TJ = 150°C TJ = 125°C 100 Figure 5. On-Resistance Variation with Temperature VGS, GATE-TO-SOURCE VOLTAGE (V) 350 TJ = 25°C 300 C, CAPACITANCE (pF) Ciss 250 200 150 100 50 0 0 VGS = 0 V 5 10 15 20 DRAIN-TO-SOURCE VOLTAGE (V) Coss Crss 25 10 Figure 6. Drain-to-Source Leakage Current vs. Voltage QT VGS 8 6 Q1 Q2 4 2 0 0 1 2 3 4 ID = 4 A TJ = 25°C 5 6 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 100 IS, SOURCE CURRENT (A) VDD = 15 V ID = 1.0 A VGS = 10 V t, TIME (ns) 10 td(off) tf td(on) tr 1 3.0 2.5 2.0 1.5 1.0 0.5 0 1 10 RG, GATE RESISTANCE (W) 100 0 Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge VGS = 0 V TJ = 25°C 0.1 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTMD4884NF TYPICAL CHARACTERISTICS 1000 0.5 0.2 0.1 0.05 0.02 0.01 100 R(t) (°C/W) 10 1 0.1 0.01 Single Pulse 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 11. Thermal Response - RqJA at Steady State (min pad) 100 0.5 R(t) (°C/W) 0.2 10 0.1 0.05 0.02 1 0.01 0.1 Single Pulse 0.01 0.001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 12. Thermal Response - RqJA at Steady State (1 inch sq pad) IF, INSTANTANEOUS FORWARD CURRENT (A) 100 IF, INSTANTANEOUS FORWARD CURRENT (A) 100 10 TJ = 125°C 1 10 TJ = 125°C 1 TJ = 85°C TJ = 25°C 0.1 0.1 0.3 0.5 0.7 0.9 1.1 1.3 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V) TJ = 85°C TJ = 25°C 0.1 0.1 0.3 TJ = -55°C 0.5 0.7 0.9 1.1 1.3 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 13. Typical Forward Voltage Figure 14. Maximum Forward Voltage http://onsemi.com 5 NTMD4884NF TYPICAL CHARACTERISTICS IR, MAXIMUM REVERSE CURRENT (A) 100E-3 IR, REVERSE CURRENT (A) TJ = 125°C 10E-3 TJ = 85°C 1E-3 100E-3 TJ = 125°C 10E-3 TJ = 85°C 1E-3 100E-6 TJ = 25°C 10E-6 1E-6 0 10 20 VR, REVERSE VOLTAGE (V) 100E-6 TJ = 25°C 10E-6 1E-6 0 10 20 30 VR, REVERSE VOLTAGE (V) 30 Figure 15. Typical Reverse Current 1000 Figure 16. Maximum Reverse Current TJ = 25°C C, CAPACITANCE (pF) 100 10 0 5 10 15 20 25 30 35 VR, REVERSE VOLTAGE (V) Figure 17. Capacitance http://onsemi.com 6 NTMD4884NF PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUE AH -XA 8 5 B 1 4 S 0.25 (0.010) M Y M -YG C -ZH D 0.25 (0.010) M SEATING PLANE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244 N X 45 _ 0.10 (0.004) M ZY S J X S DIM A B C D G H J K M N S SOLDERING FOOTPRINT* 1.52 0.060 STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. FETKY is a registered trademark of International Rectifier Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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