NTMFD4C20NT3G

NTMFD4C20N MOSFET – Power, Dual, N-Channel, SO8FL 30 V, High Side 18 A / Low Side 27 A Features • • • • www.onsemi.com Co−Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX 7.3 mW @ 10 V Q1 Top FET 30 V • DC−DC Converters • System Voltage Rails • Point of Load 18 A 10.8 mW @ 4.5 V Q2 Bottom FET 30 V Applications ID MAX 3.4 mW @ 10 V 27 A 5.2 mW @ 4.5 V D1 (2, 3, 4, 9) (1) G1 S1/D2 (10) (8) G2 S2 (5, 6, 7) PIN CONNECTIONS D1 4 D1 3 D1 2 5 S2 9 D1 6 S2 10 S1/D2 7 S2 G1 1 8 G2 (Bottom View) MARKING DIAGRAM 1 DFN8 CASE 506BX 4C20N AYWZZ 1 4C20N A Y W ZZ = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2013 May, 2019− Rev. 4 1 Publication Order Number: NTMFD4C20N/D NTMFD4C20N MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Q1 Drain−to−Source Voltage Q2 Gate−to−Source Voltage Q1 Gate−to−Source Voltage Q2 Continuous Drain Current RqJA (Note 1) TA = 25°C Q1 Symbol Value Unit VDSS 30 V VGS ±20 V ID 12 TA = 85°C TA = 25°C 8.6 Q2 18 TA = 85°C Power Dissipation RqJA (Note 1) TA = 25°C Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C 13 Q1 PD Q2 Q1 Steady State ID TA = 25°C Continuous Drain Current RqJA (Note 2) TA = 25°C 27.4 Q1 PD Q1 ID Pulsed Drain Current TA = 25°C tp = 10 ms 13.7 A 9.9 Q1 PD Q2 Operating Junction and Storage Temperature W 9.1 6.6 Q2 TA = 85°C TA = 25 °C 4.37 4.6 TA = 85°C Power Dissipation RqJA (Note 2) A 19.8 Q2 TA = 25°C W 18.2 13.1 Q2 TA = 85°C Power Dissipation RqJA ≤ 10 s (Note 1) 1.88 1.97 TA = 85°C TA = 25°C A Q1 W 1.15 IDM 55 TJ, TSTG −55 to +150 °C IS 4.0 A Q2 Q1 1.09 A 82 Q2 Source Current (Body Diode) Q1 Q2 Drain to Source DV/DT Single Pulse Drain−to−Source Avalanche Energy (TJ = 25C, VDD = 50 V, VGS = 10 V, L = 0.1 mH, RG = 25 W) 4.2 dV/dt 6 V/ns 16 mJ IL = 18 Apk Q1 EAS IL = 29 Apk Q2 EAS 42 TL 260 Lead Temperature for Soldering Purposes (1/8” from case for 10 s) °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2. www.onsemi.com 2 NTMFD4C20N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Ambient – Steady State (Note 3) FET Symbol Value Q1 RqJA 66.5 Q2 Junction−to−Ambient – Steady State (Note 4) 63.3 Q1 RqJA 114.3 Q2 Junction−to−Ambient – (t ≤ 10 s) (Note 3) 108.7 Q1 RqJA °C/W 28.6 Q2 Junction−to−Case – (Drain) Unit 27.2 Q1 RqJC 5.4 Q2 3.7 3. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter FET Symbol Test Condition Min Drain−to−Source Breakdown Voltage Q1 V(BR)DSS VGS = 0 V, ID = 250 mA 30 VGS = 0 V, ID = 1 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient Q1 Zero Gate Voltage Drain Current Q1 Typ Max Unit OFF CHARACTERISTICS Q2 Q2 V(BR)DSS/ TJ IDSS Q2 Gate−to−Source Leakage Current Q1 mV/°C 14.5 12 VGS = 0 V, VDS = 24 V VGS = 0 V, VDS = 24 V IGSS V TJ = 25°C 1 TJ = 125°C 10 TJ = 25°C 10 VDS = 0 V, VGS = ±20 V ±100 Q2 mA nA ±100 ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Q1 VGS(TH) VGS = VDS, ID = 250 mA Q2 Negative Threshold Temperature Coefficient Q1 Drain−to−Source On Resistance Q1 Q2 Q1 2.1 1.3 VGS(TH)/ TJ RDS(on) Q2 Forward Transconductance 1.3 gFS V 2.1 mV/°C 4.7 5.1 VGS = 10 V ID = 10 A 5.8 7.3 VGS = 4.5 V ID = 10 A 8.7 10.8 VGS = 10 V ID = 20 A 2.7 3.4 VGS = 4.5 V ID = 20 A 4.0 5.2 VDS = 1.5 V, ID = 10 A Q2 43 68 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 mW S NTMFD4C20N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter FET Symbol Test Condition Min Typ Max Unit CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Reverse Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Total Gate Charge Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 970 CISS COSS 1950 VGS = 0 V, f = 1 MHz, VDS = 15 V pF 990 125 CRSS 50 9.3 QG(TOT) 13 1.6 QG(TH) VGS = 4.5 V, VDS = 15 V; ID = 10 A QGS 3.3 nC 3.3 6.0 4.2 QGD QG(TOT) 430 3.0 VGS = 10 V, VDS = 15 V; ID = 10 A 19 nC 29 SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Q1 Q2 Q1 tr Q2 Q1 Q2 9.0 td(ON) 11 33 VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W td(OFF) Q1 ns 15 20 5.0 tf Q2 32 5.0 SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Q1 Q2 Q1 tr Q2 Q1 Q2 6.0 td(ON) 8.0 26 VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W td(OFF) Q1 ns 18 25 4.0 tf Q2 26 4.0 DRAIN−SOURCE DIODE CHARACTERISTICS VGS = 0 V, IS = 3 A Q1 Forward Voltage VSD Q2 VGS = 0 V, IS = 3 A 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 4 TJ = 25°C 0.75 TJ = 125°C 0.62 TJ = 25°C 0.45 TJ = 125°C 0.37 1.0 0.70 V NTMFD4C20N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter FET Symbol Test Condition Min Typ Max Unit DRAIN−SOURCE DIODE CHARACTERISTICS Reverse Recovery Time Q1 Q2 Q1 Charge Time Q2 Q1 Discharge Time Q2 Reverse Recovery Charge Q1 Q2 23 tRR 38 11.6 ta ns 18.6 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 11.4 tb 19.4 10 QRR nC 25 PACKAGE PARASITIC VALUES Source Inductance Drain Inductance Gate Inductance Gate Resistance Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 0.38 LS nH 0.65 0.054 LD nH 0.007 TA = 25°C 1.5 LG nH 1.5 RG 0.3 1.0 2.0 0.3 1.0 2.0 W 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTMFD4C20NT1G Package Shipping† DFN8 (Pb−Free) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NTMFD4C20N TYPICAL CHARACTERISTICS − Q1 4.0 V 4.2 V to 10 V 80 3.8 V TJ = 25°C ID, DRAIN CURRENT (A) 3.6 V 3.4 V 3.2 V 3.0 V 2.8 V 1 2 4 3 40 30 TJ = 125°C 20 TJ = 25°C TJ = −55°C 0 2.0 2.5 3.0 3.5 4.0 Figure 2. Transfer Characteristics ID = 30 A 0.012 0.010 0.008 0.006 0.004 4.0 5.0 6.0 7.0 8.0 9.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 4.5 5.0 0.020 0.018 TJ = 25°C 0.016 0.014 0.012 VGS = 4.5 V 0.010 0.008 VGS = 10 V 0.006 0.004 0.002 10 20 30 40 50 60 70 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.7 10000 VGS = 0 V ID = 30 A VGS = 10 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.5 Figure 1. On−Region Characteristics 0.014 1.5 1.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.016 1.6 0.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.018 3.0 50 0 5 0.020 0.002 60 10 2.6 V 0 VDS = 5 V 70 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 65 60 55 50 45 40 35 30 25 20 15 10 5 0 1.4 1.3 1.2 1.1 1.0 1000 TJ = 150°C TJ = 125°C 100 TJ = 85°C 0.9 0.8 0.7 −50 −25 0 25 50 75 100 125 150 10 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 6 30 NTMFD4C20N TYPICAL CHARACTERISTICS − Q1 C, CAPACITANCE (pF) VGS = 0 V TJ = 25°C Ciss 1000 VGS, GATE−TO−SOURCE VOLTAGE (V) 1200 800 Coss 600 400 Crss 200 0 0 5 10 15 20 25 30 QT 8 6 Qgs 4 Qgd TJ = 25°C VDD = 15 V VGS = 10 V ID = 30 A 2 0 0 2 4 6 8 10 20 IS, SOURCE CURRENT (A) 18 td(on) tr td(off) tf 1 10 16 14 12 10 8 6 4 0 0.4 100 20 VGS = 0 V TJ = 125°C 2 TJ = 25°C 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 10 ms 100 ms 10 1 ms 10 ms 1 0 V < VGS < 10 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 0.01 0.1 dc 1 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) RG, GATE RESISTANCE (W) 100 ID, DRAIN CURRENT (A) 18 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 0.01 16 Figure 7. Capacitance Variation 100 0.1 14 Qg, TOTAL GATE CHARGE (nC) VDD = 15 V ID = 15 A VGS = 10 V 1 12 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 t, TIME (ns) 10 100 14 ID = 17 A 12 10 8 6 4 2 0 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature www.onsemi.com 7 150 NTMFD4C20N TYPICAL CHARACTERISTICS − Q1 100 Duty Cycle = 50% R(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Response 100 60 ID, DRAIN CURRENT (A) 50 GFS (S) 40 30 20 10 0 0 10 20 30 40 50 60 70 TA = 25°C 1 1.E−08 80 TA = 85°C 10 1.E−07 1.E−06 1.E−05 1.E−04 1.E−03 ID (A) PULSE WIDTH (SECONDS) Figure 14. GFS vs. ID Figure 15. Avalanche Characteristics www.onsemi.com 8 NTMFD4C20N 0.028 0.026 0.024 0.022 0.020 0.018 0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 3.0 TJ = 25°C 3.8 V 3.6 V 4 V to 6.5 V ID, DRAIN CURRENT (A) 140 130 10 V 120 110 100 90 80 70 60 50 40 30 20 10 0 0 3.4 V 3.2 V 3.0 V 2.8 V 2.6 V 1 2 3 5 4 140 130 VDS = 5 V 120 110 100 90 80 70 60 50 40 30 20 10 0 0 0.5 1.0 2.0 2.5 3.0 3.5 4.0 Figure 17. Transfer Characteristics ID = 30 A TJ = 25°C 4.0 5.0 6.0 7.0 8.0 9.0 0.008 4.5 TJ = 25°C 0.007 0.006 0.005 VGS = 4.5 V 0.004 VGS = 10 V 0.003 0.002 10 10 20 30 40 50 60 70 ID, DRAIN CURRENT (A) Figure 19. On−Resistance vs. Drain Current and Gate Voltage 10000 1.7 VGS = 0 V ID = 30 A VGS = 10 V TJ = 150°C IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = −55°C 1.5 Figure 16. On−Region Characteristics Figure 18. On−Resistance vs. VGS 1.5 TJ = 25°C VGS, GATE−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) 1.6 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) TYPICAL CHARACTERISTICS − Q2 1.4 1.3 1.2 1.1 1.0 1000 TJ = 125°C 100 TJ = 85°C 0.9 0.8 0.7 −50 −25 0 25 50 75 100 125 150 10 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 20. On−Resistance Variation with Temperature Figure 21. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 9 30 NTMFD4C20N 3000 VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 2750 2500 2250 Ciss 2000 1750 1500 1250 1000 Coss 750 500 250 0 Crss 0 5 10 15 20 25 30 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS − Q2 QT 8 6 4 Qgd Qgs TJ = 25°C VDD = 15 V VGS = 10 V ID = 30 A 2 0 0 4 8 12 16 28 Figure 22. Capacitance Variation Figure 23. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 20 IS, SOURCE CURRENT (A) 18 td(off) td(on) 100 tr tf 10 1 10 16 14 12 10 8 6 4 0 0.4 100 32 VGS = 0 V TJ = 125°C TJ = 25°C 2 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 24. Resistive Switching Time Variation vs. Gate Resistance Figure 25. Diode Forward Voltage vs. Current 100 10 ms 100 ms 1 ms 10 10 ms 1 0.1 0.01 0.01 0 V < VGS < 10 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 0.1 dc 1 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) RG, GATE RESISTANCE (W) 1000 ID, DRAIN CURRENT (A) 24 Qg, TOTAL GATE CHARGE (nC) VDD = 15 V ID = 15 A VGS = 10 V 1 20 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 t, TIME (ns) 10 100 45 ID = 29 A 40 35 30 25 20 15 10 5 0 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 26. Maximum Rated Forward Biased Safe Operating Area Figure 27. Maximum Avalanche Energy vs. Starting Junction Temperature www.onsemi.com 10 150 NTMFD4C20N TYPICAL CHARACTERISTICS − Q2 100 Duty Cycle = 50% R(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 100 1000 PULSE TIME (sec) Figure 28. Thermal Response 100 120 ID, DRAIN CURRENT (A) 100 GFS (S) 80 60 40 20 0 0 10 20 30 40 50 60 70 TA = 25°C 1 1.E−07 80 TA = 85°C 10 1.E−06 1.E−05 1.E−04 ID (A) PULSE WIDTH (SECONDS) Figure 29. GFS vs. ID Figure 30. Avalanche Characteristics www.onsemi.com 11 1.E−03 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual−Asymmetrical) CASE 506BX ISSUE D DATE 24 JUN 2014 1 SCALE 2:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.25 MM FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PADS AS WELL AS THE TERMINALS. 5. DIMENSIONS b AND L ARE MEASURED AT THE PACKAGE SURFACE 6. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 7. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST POINT ON THE PACKAGE BODY. 2X 0.20 C D A D1 8 ÉÉ ÉÉ 1 2 2X 0.20 C 5 E1 E 4X h NOTE 6 PIN ONE IDENTIFIER B NOTE 6 7 6 3 c 4 DIM A A1 b b1 c D D1 D2 E E1 E2 E3 e h k k1 k2 L A1 NOTE 7 TOP VIEW 0.10 C DETAIL A A 0.10 C NOTE 4 C SIDE VIEW DETAIL A e DETAIL B e/2 1 SEATING PLANE 4 8X E3 k k1 k2 E2 8 0.10 REF DETAIL B 5 D2 BOTTOM VIEW 8X MILLIMETERS MAX MIN 1.10 0.90 0.00 0.05 0.41 0.61 0.41 0.61 0.23 0.33 5.00 5.30 4.50 5.10 3.50 4.22 6.00 6.30 5.50 6.10 2.27 2.67 0.82 1.22 1.27 BSC −−− 12 _ 0.39 0.59 0.56 0.76 0.73 0.93 0.35 0.55 GENERIC MARKING DIAGRAM* 1 XXXXXX AYWZZ XXXXXX= Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability b 0.10 C A B 0.05 C NOTE 3 *This information is generic. Please refer to device data sheet for actual part marking. 6X b1 NOTE 3 RECOMMENDED SOLDERING FOOTPRINT* L PACKAGE OUTLINE STYLE 1: PIN 1. GATE 1 2. DRAIN 1 3. DRAIN 1 4. DRAIN 1 5. SOURCE 2 6. SOURCE 2 7. SOURCE 2 8. GATE 2 9. DRAIN 1 10. SOURCE 1/DRAIN 2 5.35 8X 0.69 8X 0.64 1.97 2.68 6.45 2.33 1.22 4X 1.27 PITCH 0.69 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON54291E Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DFN8 5X6, 1.27P DUAL FLAG (SO8FL−DUAL−ASYMMETRICAL) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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