NTMFD4C86NT3G

NTMFD4C86N PowerPhase, Dual N-Channel SO8FL 30 V, High Side 20 A / Low Side 32 A Features • • • • Co−Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications www.onsemi.com V(BR)DSS RDS(on) MAX 5.4 mW @ 10 V Q1 Top FET 30 V 20 A 8.1 mW @ 4.5 V Q2 Bottom FET 30 V • DC−DC Converters • System Voltage Rails • Point of Load ID MAX 2.6 mW @ 10 V 32 A 3.4 mW @ 4.5 V D1 (3, 4, 9) (1) G1 (2) S1 SW (5, 6, 7) (8) G2 S2 (10) PIN CONNECTIONS Figure 1. Typical Application Circuit D1 4 100 D1 3 EFFICIENCY (%) 95 S1 2 5 SW 9 D1 10 S2 6 SW 7 SW G1 1 8 G2 90 (Bottom View) 85 MARKING DIAGRAM 80 VIN = 12 V VOUT = 1.2 V VGS = 5 V FSW = 300 kHz TA = 25°C 75 70 0 5 10 15 LOAD CURRENT (A) 20 1 DFN8 CASE 506CR 4C86N AYWZZ 1 25 4C86N A Y W ZZ Figure 2. Typical Efficiency Performance POWERPHASEGEVB Evaluation Board = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION See detailed ordering and shipping information on page 10 of this data sheet. © Semiconductor Components Industries, LLC, 2016 September, 2016 − Rev. 3 1 Publication Order Number: NTMFD4C86N/D NTMFD4C86N MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Q1 Drain−to−Source Voltage Q2 Gate−to−Source Voltage Q1 Gate−to−Source Voltage Q2 Continuous Drain Current RqJA (Note 1) TA = 25°C Q1 Symbol Value Unit VDSS 30 V VGS ±20 V ID 14.8 TA = 85°C TA = 25°C 10.7 Q2 23.7 TA = 85°C Power Dissipation RqJA (Note 1) TA = 25°C Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C A 17.1 Q1 PD 1.89 ID 20.2 W Q2 Q1 TA = 85°C TA = 25°C Steady State 14.5 Q2 32.3 TA = 85°C Power Dissipation RqJA ≤ 10 s (Note 1) TA = 25°C Continuous Drain Current RqJA (Note 2) TA = 25°C A 23.3 Q1 PD 3.51 ID 11.3 W Q2 Q1 TA = 85°C TA = 25°C 8.1 Q2 18.1 TA = 85°C Power Dissipation RqJA (Note 2) TA = 25 °C Pulsed Drain Current TA = 25°C tp = 10 ms A 13.0 Q1 PD 1.10 W IDM 160 A TJ, TSTG −55 to +150 °C IS 10 A Q2 Operating Junction and Storage Temperature Q1 Q2 Q1 280 Q2 Source Current (Body Diode) Q1 Q2 Drain to Source DV/DT Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, L = 0.1 mH, RG = 25 W) 10 dV/dt 6 V/ns 20 mJ IL = 20 Apk Q1 EAS IL = 40 Apk Q2 EAS 80 TL 260 Lead Temperature for Soldering Purposes (1/8” from case for 10 s) °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2. www.onsemi.com 2 NTMFD4C86N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case (Top) – Steady State (Note 3) Parameter RqJC 3.3 Junction−to−Ambient – Steady State (Note 3) RqJA 66.0 Junction−to−Ambient – Steady State (Note 4) RqJA 113.7 Junction−to−Ambient – (t ≤ 10 s) (Note 3) RqJA 35.6 Unit °C/W 3. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter FET Symbol Test Condition V(BR)DSS VGS = 0 V, ID = 250 mA Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Q1 Drain−to−Source Breakdown Voltage Temperature Coefficient Q1 Q2 V(BR)DSS / TJ Zero Gate Voltage Drain Current Q1 IDSS Q2 Q2 Gate−to−Source Leakage Current Q1 30 17 mV / °C 16.5 VGS = 0 V, VDS = 24 V VGS = 0 V, VDS = 24 V IGSS V 30 TJ = 25°C 1 TJ = 125°C 10 TJ = 25°C 1 VGS = 0 V, VDS = +20 V mA 100 Q2 100 nA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Q1 VGS(TH) VGS = VDS, ID = 250 mA Q2 Negative Threshold Temperature Coefficient Q1 Drain−to−Source On Resistance Q1 Q2 VGS(TH) / TJ RDS(on) Q2 1.3 2.2 1.3 2.2 4.5 V mV / °C 4.6 VGS = 10 V ID = 30 A 4.3 5.4 VGS = 4.5 V ID = 18 A 6.5 8.1 VGS = 10 V ID = 30 A 1.7 2.6 VGS = 4.5 V ID = 12.5 A 2.4 3.4 mW CAPACITANCES Q1 Input Capacitance Q2 1153 CISS 3050 Q1 Output Capacitance Q2 532 COSS VGS = 0 V, f = 1 MHz, VDS = 15 V Q1 Reverse Capacitance Q2 1650 pF 107 CRSS 77 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 NTMFD4C86N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter FET Symbol Test Condition Min Typ Max Unit CHARGES, CAPACITANCES & GATE RESISTANCE Q1 Total Gate Charge Q2 10.9 QG(TOT) 21.6 Q1 Threshold Gate Charge Q2 1.2 QG(TH) Q1 Gate−to−Source Charge Q2 1.4 VGS = 4.5 V, VDS = 15 V; ID = 30 A QGS Q2 5.4 QGD 5.5 Q1 Total Gate Charge Q2 22.2 QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A RG Q1 Gate Resistance nC 8.6 Q1 Gate−to−Drain Charge 3.4 47.5 1.0 TA = 25°C Q2 1.0 nC W SWITCHING CHARACTERISTICS (Note 6) Q1 Turn−On Delay Time Q2 8.9 td(ON) 8.3 Q1 Rise Time 21.2 tr Q2 VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W Q1 Turn−Off Delay Time Q2 td(OFF) 15.3 ns 19.3 Q1 Fall Time 15.1 4.4 tf Q2 4.2 SWITCHING CHARACTERISTICS (Note 6) Q1 Turn−On Delay Time Q2 6.7 td(ON) 6.3 Q1 Rise Time Q2 19.5 tr VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W Q1 Turn−Off Delay Time Q2 td(OFF) Q2 20.1 ns 22.8 Q1 Fall Time 13.8 2.8 tf 3.2 DRAIN−SOURCE DIODE CHARACTERISTICS VGS = 0 V, IS = 10 A Q1 Forward Voltage VSD Q2 VGS = 0 V, IS = 10 A TJ = 25°C 0.80 TJ = 125°C 0.60 TJ = 25°C 0.78 TJ = 125°C 0.62 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 4 NTMFD4C86N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter FET Symbol Test Condition Min Typ Max Unit DRAIN−SOURCE DIODE CHARACTERISTICS Q1 Reverse Recovery Time Q2 29.1 tRR 33.7 Q1 Charge Time Q2 14.5 ta VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A Q1 Discharge Time Q2 17.4 tb Q2 14.6 16.3 Q1 Reverse Recovery Charge ns 21 QRR 27.5 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 5 NTMFD4C86N TYPICAL CHARACTERISTICS − Q1 100 4.5 V to 10 V 100 4.0 V 90 TJ = 25°C 90 3.8 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 80 70 3.6 V 60 3.4 V 50 40 3.2 V 30 3.0 V 20 2.8 V VGS = 2.6 V 10 70 60 50 40 30 20 TJ = 125°C 1 2 3 4 0 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. On−Region Characteristics Figure 4. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.026 0.024 0.022 ID = 30 A 0.020 0.018 0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 3 TJ = −55°C TJ = 25°C 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 80 10 0 4 5 6 7 8 9 10 0.009 0.008 TJ = 25°C VGS = 4.5 V 0.007 0.006 0.005 VGS = 10 V 0.004 0.003 10 20 30 40 50 60 70 VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 5. On−Resistance vs. Gate−to−Source Voltage Figure 6. On−Resistance vs. Drain Current and Gate Voltage 2000 1.7 1.6 1.5 1800 VGS = 10 V ID = 30 A C, CAPACITANCE (pF) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE (W) VDS = 3 V 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 −50 VGS = 0 V TJ = 25°C f = 1 MHz 1600 1400 Ciss 1200 1000 Coss 800 600 400 Crss 200 0 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. On−Resistance Variation with Temperature Figure 8. Capacitance Variation www.onsemi.com 6 30 NTMFD4C86N 20 12 QT 18 10 IS, SOURCE CURRENT (A) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS − Q1 VGS = 45 V VDS = 15 V ID = 30 A TJ = 25°C 8 6 4 QGS QGD 2 14 12 10 8 6 4 2 0 0 0 2 6 4 8 0.1 10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 QG, TOTAL GATE CHARGE (nC) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 10. Diode Forward Voltage vs. Current 1000 1000 ID, DRAIN CURRENT (A) VGS = 10 V VDS = 15 V ID = 15 A t, TIME (ns) TJ = 25°C 16 td(off) tf 100 tr td(on) 10 VGS ≤ 10 V Single Pulse TC = 25°C 100 10 ms 100 ms 1 ms 10 10 ms 1 RDS(on) Limit Thermal Limit Package Limit dc 0.1 1 1 100 10 0.1 1 10 100 RG, GATE RESISTANCE (W) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Resistive Switching Time Variation vs. Gate Resistance Figure 12. Maximum Rated Forward Biased Safe Operating Area 100 50% Duty Cycle R(t) (°C/W) 10 1 0.1 0.01 20% 10% 5% 2% 1% PCB Cu Area 650 mm2 PCB Cu thk 1 oz Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 13. Thermal Characteristics www.onsemi.com 7 1 10 100 1000 NTMFD4C86N TYPICAL CHARACTERISTICS − Q2 160 3.6 V 3.2 V 3.8 V to 10 V 100 3.0 V 80 60 2.8 V 40 2.6 V 20 0 1 2 3 4 80 60 TJ = 125°C 40 TJ = −55°C TJ = 25°C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 14. On−Region Characteristics Figure 15. Transfer Characteristics ID = 30 A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 3 4 5 6 7 8 9 10 4.0 3.0 TJ = 25°C VGS = 4.5 V 2.5 2.0 VGS = 10 V 1.5 1.0 0.5 0 25 50 75 100 125 150 VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 16. On−Resistance vs. Gate−to−Source Voltage Figure 17. On−Resistance vs. Drain Current and Gate Voltage 10000 1.8 1.6 VGS = 10 V ID = 30 A Ciss 1.4 C, CAPACITANCE (pF) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE (mW) 100 0 5 4.5 2 120 20 VGS = 2.4 V 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 140 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 140 120 VDS = 3 V TJ = 25°C 3.4 V ID, DRAIN CURRENT (A) 160 1.2 1.0 0.8 0.6 0.4 Coss 1000 Crss 100 VGS = 0 V TJ = 25°C f = 1 MHz 0.2 0 −50 10 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 18. On−Resistance Variation with Temperature Figure 19. Capacitance Variation www.onsemi.com 8 30 NTMFD4C86N 1.00E+06 12 QT 8 6 4 QGS QGD VGS = 4.5 V VDS = 15 V ID = 30 A TJ = 25°C 2 0 0 4 12 8 VGS = 0 V 1.00E+05 16 IDSS, LEAKAGE (nA) 10 TJ = 150°C 1.00E+04 TJ = 125°C 1.00E+03 TJ = 85°C 1.00E+02 1.00E+01 1.00E+00 0 20 5 10 15 20 25 30 QG, TOTAL GATE CHARGE (nC) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 20. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 21. Drain−to−Source Leakage Current vs. Voltage 20 18 IS, SOURCE CURRENT (A) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS − Q2 TJ = 25°C 16 14 12 10 8 6 4 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 22. Diode Forward Voltage vs. Current www.onsemi.com 9 0.9 35 NTMFD4C86N TYPICAL CHARACTERISTICS − Q2 1000 1000 td(off) 100 ID, DRAIN CURRENT (A) t, TIME (ns) VGS = 10 V VDS = 15 V ID = 15 A tf tr td(on) 10 VGS ≤ 10 V Single Pulse TC = 25°C 100 10 ms 100 ms 1 ms 10 10 ms 1 RDS(on) Limit Thermal Limit Package Limit dc 0.1 1 1 10 100 0.1 1 10 100 RG, GATE RESISTANCE (W) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 23. Resistive Switching Time Variation vs. Gate Resistance Figure 24. Maximum Rated Forward Biased Safe Operating Area 100 50% Duty Cycle R(t) (°C/W) 10 1 0.1 0.01 20% 10% 5% 2% 1% PCB Cu Area 650 mm2 PCB Cu thk 1 oz Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 25. Thermal Characteristics ORDERING INFORMATION Package Shipping† NTMFD4C86NT1G DFN8 (Pb−Free) 1500 / Tape & Reel NTMFD4C86NT3G DFN8 (Pb−Free) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 10 NTMFD4C86N PACKAGE DIMENSIONS DFN8 5x6, 1.27P PowerPhase FET CASE 506CR ISSUE C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS b AND b1 APPLY TO PLATED TERMINAL AND ARE MEASURED BETWEEN 0.15 AND 0.25 MM FROM THE TIPS. 4. COPLANARITY APPLIES TO THE EXPOSED PADS AS WELL AS THE TERMINALS. 5. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST POINT ON THE PACKAGE BODY. 0.20 C D A B D1 8 PIN ONE IDENTIFIER 7 ÉÉ ÉÉ 1 2 6 2X 0.20 C 5 E1 E 4X h 3 c 4 A1 TOP VIEW A 0.10 C DETAIL A 0.10 C C NOTE 4 SIDE VIEW 8X b 0.10 M 0.05 M 1 5X DETAIL A L 6X SEATING PLANE NOTE 6 0.10 C A B C C A B NOTE 3 1 E3 b2 0.10 M C A B E2 G RECOMMENDED SOLDERING FOOTPRINT* L2 D3 e/2 e BOTTOM VIEW MILLIMETERS MAX MIN 1.10 0.90 0.00 0.05 0.40 0.60 0.40 0.60 0.20 0.30 5.15 BSC 4.90 5.10 3.70 3.90 2.96 3.16 6.15 BSC 5.80 6.00 2.37 2.57 1.05 1.25 1.36 1.56 1.27 BSC 0.625 BSC 1.615 BSC −−− 12 _ 0.34 0.59 1.68 1.93 D2 G1 E4 M DIM A A1 b b2 c D D1 D2 D3 E E1 E2 E3 E4 e G G1 h L L2 5.50 4.05 SUPPLEMENTAL BOTTOM VIEW 1.27 PITCH 0.62 2.07 5X 0.75 0.54 1.22 2.67 1.66 5X 0.71 2.31 0.76 0.23 0.98 6.50 6X 0.65 4.10 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 11 NTMFD4C86N ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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