NTMFD4C88NT3G

NTMFD4C88N PowerPhase, Dual N-Channel SO8FL 30 V, High Side 20 A / Low Side 24 A Features • • • • Co−Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications www.onsemi.com V(BR)DSS RDS(ON) MAX 5.4 mW @ 10 V Q1 Top FET 30 V 20 A 8.1 mW @ 4.5 V Q2 Bottom FET 30 V • DC−DC Converters • System Voltage Rails • Point of Load ID MAX 4.4 mW @ 10 V 24 A 6.0 mW @ 4.5 V D1 (3, 4, 9) (1) G1 (2) S1 SW (5, 6, 7) (8) G2 S2 (10) PIN CONNECTIONS Figure 1. Typical Application Circuit D1 4 100 D1 3 EFFICIENCY (%) 95 S1 2 5 SW 9 D1 10 S2 6 SW 7 SW G1 1 8 G2 90 (Bottom View) 85 MARKING DIAGRAM 80 VIN = 12 V VOUT = 1.2 V VGS = 5 V FSW = 300 kHz TA = 25°C 75 70 0 5 10 15 LOAD CURRENT (A) 20 1 DFN8 CASE 506CR 4C88N AYWZZ 1 25 4C88N A Y W ZZ Figure 2. Typical Efficiency Performance POWERPHASEGEVB Evaluation Board = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION See detailed ordering and shipping information on page 10 of this data sheet. © Semiconductor Components Industries, LLC, 2015 August, 2015 − Rev. 1 1 Publication Order Number: NTMFD4C88N/D NTMFD4C88N MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Q1 Drain−to−Source Voltage Q2 Gate−to−Source Voltage Q1 Gate−to−Source Voltage Q2 Continuous Drain Current RqJA (Note 1) TA = 25°C Q1 Symbol Value Unit VDSS 30 V VGS ±20 V ID 15.4 TA = 85°C TA = 25°C 11.1 Q2 18.7 TA = 85°C Power Dissipation RqJA (Note 1) TA = 25°C Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C A 13.5 Q1 PD 1.89 ID 21.0 W Q2 Q1 TA = 85°C TA = 25°C Steady State 15.1 Q2 25.4 TA = 85°C Power Dissipation RqJA ≤ 10 s (Note 1) TA = 25°C Continuous Drain Current RqJA (Note 2) TA = 25°C A 18.3 Q1 PD 3.51 ID 11.7 W Q2 Q1 TA = 85°C TA = 25°C 8.5 Q2 14.2 TA = 85°C Power Dissipation RqJA (Note 2) TA = 25 °C Pulsed Drain Current TA = 25°C tp = 10 ms A 10.3 Q1 PD 1.10 W IDM 160 A Q2 Operating Junction and Storage Temperature Q1 Q2 Q1 240 TJ, TSTG −55 to +150 °C IS 10 A Q2 Source Current (Body Diode) Q1 Q2 Drain to Source DV/DT Single Pulse Drain−to−Source Avalanche Energy (TJ = 25C, VDD = 50 V, VGS = 10 V, L = 0.1 mH, RG = 25 W) 10 dV/dt 6 V/ns mJ IL = 20 Apk Q1 EAS 20 IL = 24 Apk Q2 EAS 29 TL 260 Lead Temperature for Soldering Purposes (1/8” from case for 10 s) °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2. www.onsemi.com 2 NTMFD4C88N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Ambient – Steady State (Note 3) Parameter RqJA 66.0 Junction−to−Ambient – Steady State (Note 4) RqJA 113.7 Junction−to−Ambient – (t ≤ 10 s) (Note 3) RqJA 35.6 Unit °C/W 3. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter FET Symbol Test Condition V(BR)DSS VGS = 0 V, ID = 250 mA Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Q1 Drain−to−Source Breakdown Voltage Temperature Coefficient Q1 Q2 Q2 Zero Gate Voltage Drain Current Gate−to−Source Leakage Current 18 mV / °C 17 VGS = 0 V, VDS = 24 V IDSS Q2 TJ = 25°C 1 TJ = 125°C 10 TJ = 25°C 1 VGS = 0 V, VDS = 24 V Q1 Q2 30 V(BR)DSS / TJ Q1 V 30 IGSS VGS = 0 V, VDS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA 100 100 nA ON CHARACTERISTICS (Note 5) Q1 Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Q2 Q1 Q2 VGS(TH) / TJ Q1 RDS(on) Q2 1.3 2.2 1.3 2.2 4.5 V mV / °C 4.6 VGS = 10 V ID = 10 A 4.3 5.4 VGS = 4.5 V ID = 10 A 6.5 8.1 VGS = 10 V ID = 20 A 2.8 4.4 VGS = 4.5 V ID = 20 A 4.0 6.0 mW CAPACITANCES Q1 Input Capacitance Q2 1252 CISS 1546 Q1 Output Capacitance Q2 610 COSS VGS = 0 V, f = 1 MHz, VDS = 15 V Q1 Reverse Capacitance Q2 841 pF 126 CRSS 39 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 NTMFD4C88N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter FET Symbol Test Condition Min Typ Max Unit CHARGES, CAPACITANCES & GATE RESISTANCE Q1 Total Gate Charge Q2 10.9 QG(TOT) 11 Q1 Threshold Gate Charge Q2 1.2 QG(TH) Q1 Gate−to−Source Charge Q2 1.6 VGS = 4.5 V, VDS = 15 V; ID = 10 A QGS Q2 5.4 QGD 2.9 Q1 Total Gate Charge Q2 22.2 QG(TOT) VGS = 10 V, VDS = 15 V; ID = 10 A RG Q1 Gate Resistance nC 4.4 Q1 Gate−to−Drain Charge 3.4 24.2 1.0 TA = 25°C Q2 1.0 nC W SWITCHING CHARACTERISTICS (Note 6) Q1 Turn−On Delay Time Q2 9.4 td(ON) 10.7 Q1 Rise Time 19 tr Q2 VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W Q1 Turn−Off Delay Time Q2 td(OFF) 16 ns 19.3 Q1 Fall Time 4.8 4.6 tf Q2 4.7 SWITCHING CHARACTERISTICS (Note 6) Q1 Turn−On Delay Time Q2 6.8 td(ON) 7.5 Q1 Rise Time Q2 17 tr VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W Q1 Turn−Off Delay Time Q2 td(OFF) Q2 20.6 ns 24.8 Q1 Fall Time 2.7 2.64 tf 2.88 DRAIN−SOURCE DIODE CHARACTERISTICS VGS = 0 V, IS = 10 A Q1 Forward Voltage VSD Q2 VGS = 0 V, IS = 10 A TJ = 25°C 0.82 TJ = 125°C 0.64 TJ = 25°C 0.8 TJ = 125°C 0.62 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 4 NTMFD4C88N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter FET Symbol Test Condition Min Typ Max Unit DRAIN−SOURCE DIODE CHARACTERISTICS Q1 Reverse Recovery Time Q2 29 tRR 16.7 Q1 Charge Time Q2 14.2 ta VGS = 0 V, dIS/dt = 100 A/ms, IS = 10 A Q1 Discharge Time Q2 19.5 tb Q2 15.0 36.2 Q1 Reverse Recovery Charge ns 18.1 QRR 27.4 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 5 NTMFD4C88N TYPICAL CHARACTERISTICS − Q1 100 4.5 V to 10 V 100 4.0 V 90 TJ = 25°C 90 3.8 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 80 70 3.6 V 60 3.4 V 50 40 3.2 V 30 3.0 V 20 2.8 V VGS = 2.6 V 10 70 60 50 40 30 20 TJ = 125°C 1 2 3 4 0 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. On−Region Characteristics Figure 4. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.026 0.024 0.022 ID = 20 A 0.020 0.018 0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 3 TJ = −55°C TJ = 25°C 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 80 10 0 4 5 6 7 8 9 10 0.009 0.008 TJ = 25°C VGS = 4.5 V 0.007 0.006 0.005 VGS = 10 V 0.004 0.003 10 20 30 40 50 60 70 VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 5. On−Resistance vs. Gate−to−Source Voltage Figure 6. On−Resistance vs. Drain Current and Gate Voltage 1600 1.7 1.6 1.5 VGS = 10 V ID = 20 A 1400 C, CAPACITANCE (pF) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE (W) VDS = 5 V 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 −50 VGS = 0 V TJ = 25°C Ciss 1200 1000 Coss 800 600 400 Crss 200 0 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. On−Resistance Variation with Temperature Figure 8. Capacitance Variation www.onsemi.com 6 30 NTMFD4C88N 11 20 QT 10 18 IS, SOURCE CURRENT (A) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS − Q1 9 VGS = 4.5 V VDS = 15 V ID = 30 A TJ = 25°C 8 7 6 5 4 QGS QGD 3 2 14 12 10 8 6 4 2 0 1 0 0 1 3 2 4 6 5 7 8 9 0.1 11 10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 QG, TOTAL GATE CHARGE (nC) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 10. Diode Forward Voltage vs. Current 1000 1000 ID, DRAIN CURRENT (A) VGS = 10 V VDS = 15 V ID = 15 A t, TIME (ns) TJ = 25°C 16 td(off) tf 100 tr td(on) 10 VGS ≤ 10 V Single Pulse TC = 25°C 100 10 ms 100 ms 1 ms 10 10 ms 1 RDS(on) Limit Thermal Limit Package Limit dc 0.1 1 1 100 10 0.1 1 10 100 RG, GATE RESISTANCE (W) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Resistive Switching Time Variation vs. Gate Resistance Figure 12. Maximum Rated Forward Biased Safe Operating Area 100 50% Duty Cycle R(t) (°C/W) 10 1 0.1 0.01 20% 10% 5% 2% 1% PCB Cu Area 650 mm2 PCB Cu thk 1 oz Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 13. Thermal Characteristics www.onsemi.com 7 1 10 100 1000 NTMFD4C88N 4.5 V to 10 V 3.8 V TJ = 25°C 70 3.6 V 3.4 V 3.2 V 3.0 V 2.8 V 50 40 30 TJ = 25°C 20 TJ = 125°C 10 TJ = −55°C 0 1 2 3 4 0 5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 14. On−Region Characteristics Figure 15. Transfer Characteristics 9 ID = 30 A TJ = 25°C 8 7 6 5 4 3 2 1 0 3 2 0.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 10 4 5 6 7 8 9 10 7 TJ = 25°C 6 5 VGS = 4.5 V 4 VGS = 10 V 3 2 1 10 20 30 40 50 60 ID, DRAIN CURRENT (A) Figure 16. On−Resistance vs. Gate−to−Source Voltage Figure 17. On−Resistance vs. Drain Current and Gate Voltage 1.5 1800 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 −50 70 2000 VGS = 10 V ID = 30 A C, CAPACITANCE (pF) 1.6 4.5 8 VGS, GATE VOLTAGE (V) 1.7 RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE (W) VDS = 5 V 60 VGS = 2.6 V 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 80 4.0 V ID, DRAIN CURRENT (A) 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) TYPICAL CHARACTERISTICS − Q2 Ciss 1600 1400 Coss VGS = 0 V TJ = 25°C f = 1 MHz 1200 1000 800 600 400 200 Crss 0 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 18. On−Resistance Variation with Temperature Figure 19. Capacitance Variation www.onsemi.com 8 30 NTMFD4C88N 11 20 QT 10 18 IS, SOURCE CURRENT (A) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS − Q2 9 VGS = 4.5 V VDS = 15 V ID = 30 A TJ = 25°C 8 7 6 5 4 QGS 3 QGD 2 14 12 10 8 6 4 2 0 1 0 0 2 6 4 8 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 QG, TOTAL GATE CHARGE (nC) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 20. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 21. Diode Forward Voltage vs. Current 1000 VGS = 10 V VDS = 15 V ID = 15 A ID, DRAIN CURRENT (A) 1000 t, TIME (ns) TJ = 25°C 16 td(off) tr 100 tf td(on) 10 VGS ≤ 10 V Single Pulse TC = 25°C 100 10 ms 100 ms 1 ms 10 ms 10 1 RDS(on) Limit Thermal Limit Package Limit dc 0.1 1 1 10 100 0.1 1 10 100 RG, GATE RESISTANCE (W) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 22. Resistive Switching Time Variation vs. Gate Resistance Figure 23. Maximum Rated Forward Biased Safe Operating Area 100 50% Duty Cycle R(t) (°C/W) 10 1 0.1 0.01 20% 10% 5% 2% 1% PCB Cu Area 650 mm2 PCB Cu thk 1 oz Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 24. Thermal Characteristics www.onsemi.com 9 1 10 100 1000 NTMFD4C88N ORDERING INFORMATION Package Shipping† NTMFD4C88NT1G DFN8 (Pb−Free) 1500 / Tape & Reel NTMFD4C88NT3G DFN8 (Pb−Free) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 10 NTMFD4C88N PACKAGE DIMENSIONS DFN8 5x6, 1.27P PowerPhase FET CASE 506CR ISSUE C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS b AND b1 APPLY TO PLATED TERMINAL AND ARE MEASURED BETWEEN 0.15 AND 0.25 MM FROM THE TIPS. 4. COPLANARITY APPLIES TO THE EXPOSED PADS AS WELL AS THE TERMINALS. 5. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST POINT ON THE PACKAGE BODY. 0.20 C D A B D1 8 PIN ONE IDENTIFIER 7 ÉÉ ÉÉ 1 2 6 2X 0.20 C 5 E1 E 4X h 3 c 4 A1 TOP VIEW A 0.10 C DETAIL A 0.10 C C NOTE 4 SIDE VIEW 8X b 0.10 M 0.05 M 1 5X DETAIL A L 6X SEATING PLANE NOTE 6 0.10 C A B C C A B NOTE 3 1 E3 b2 0.10 M C A B E2 G RECOMMENDED SOLDERING FOOTPRINT* L2 D3 e/2 e BOTTOM VIEW MILLIMETERS MAX MIN 1.10 0.90 0.00 0.05 0.40 0.60 0.40 0.60 0.20 0.30 5.15 BSC 4.90 5.10 3.70 3.90 2.96 3.16 6.15 BSC 5.80 6.00 2.37 2.57 1.05 1.25 1.36 1.56 1.27 BSC 0.625 BSC 1.615 BSC −−− 12 _ 0.34 0.59 1.68 1.93 D2 G1 E4 M DIM A A1 b b2 c D D1 D2 D3 E E1 E2 E3 E4 e G G1 h L L2 5.50 4.05 SUPPLEMENTAL BOTTOM VIEW 1.27 PITCH 0.62 2.07 5X 0.75 0.54 1.22 2.67 1.66 5X 0.71 2.31 0.76 0.23 0.98 6.50 6X 0.65 4.10 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 11 NTMFD4C88N ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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