MOSFET - Power, Single
N-Channel, PQFN8 5x6
150 V, 11.5 mW, 78 A
NTMFS011N15MC
Features
•
•
•
•
Small Footprint (5 x 6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
150 V
Typical Applications
•
•
•
•
MAXIMUM RATINGS (TJ = 25°C, Unless otherwise specified)
Drain−to−Source Breakdown Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJC (Note
2)
Steady
State
TC = 25°C
Steady
State
TA = 25°C
Power Dissipation
RqJA (Note 1, 2)
Pulsed Drain Current
TA = 25°C, tp = 250
ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (IAV = 39 A, L = 0.1 mH)
Lead Temperature Soldering Reflow for Soldering Purposes (1/8” from case for 10 s)
Symbol
Value
Unit
V(BR)DSS
150
V
VGS
±20
V
ID
78
A
PD
147
W
ID
10.7
A
35 A
13.2 mW @ 8 V
18 A
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
D
© Semiconductor Components Industries, LLC, 2013
S
S
Top
S
PD
2.7
W
IDM
259
A
MARKING DIAGRAM
TJ, Tstg
−55 to
+150
°C
IS
133
A
EAS
76.1
mJ
TL
300
°C
1
D
D
D
Pin 1
Bottom
PQFN8 5x6
(Power 56)
CASE 483AE
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in2 pad size, 1 oz Cu pad.
2. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
March, 2020 − Rev. 1
11.5 mW @ 10 V
G
Power Dissipation
RqJC (Note 2)
Continuous Drain
Current RqJA (Note
1, 2)
ID MAX
N−Channel MOSFET
Synchronous Rectification
AC−DC and DC−DC Power Supplies
AC−DC Adapters (USB PD) SR
Load Switch
Parameter
RDS(ON) MAX
XXXXXX
AYWZZ
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Publication Order Number:
NTMFS011N15MC/D
NTMFS011N15MC
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
Junction−to−Case – Steady State (Note 5)
RqJA
Junction−to−Ambient – Steady State (Note 5)
Max
Unit
0.85
°C/W
46
ORDERING INFORMATION
Device
Device Marking
Package
Shipping (Qty / Packing)†
NTMFS011N15MC
NTMFS011N15MC
PQFN8 5x6 (Power 56)
(Pb−Free/Halogen Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Test Conditions
Min
V(BR)DSS
Drain*to*Source Breakdown Voltage
VGS = 0 V, ID = 250 mA
150
V(BR)DSS / TJ
Drain*to*Source Breakdown Voltage
Temperature Coefficient
Symbol
Typ
Max
Unit
OFF CHARACTERISTICS
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate*to*Source Leakage Current
ID = 250 mA, ref to 25°C
VGS = 0 V, VDS = 120 V
V
85
TJ = 25°C
mV/°C
1
TJ = 125°C
mA
100
VDS = 0 V, VGS = ±20 V
±100
nA
4.5
V
ON CHARACTERISTICS (Note 3)
V
V
GS(TH)
/T
GS(TH)
J
R
DS(on)
g
FS
RG
Gate Threshold Voltage
VGS = VDS, ID = 194 mA
Negative Threshold Temperature
Coefficient
ID = 250 mA, ref to 25°C
Drain*to*Source On Resistance
Forward Transconductance
2.5
3.35
−7.2
mV/°C
VGS = 10 V, ID = 35 A
9.0
11.5
VGS = 8 V, ID = 18 A
9.7
13.2
VDS = 10 V, ID = 18 A
96
116
S
TA = 25°C
0.9
1.1
W
2478
3592
pF
728
1092
7.9
15
30.6
46
46
Gate−Resistance
mW
CHARGES & CAPACITANCES
C
C
ISS
Input Capacitance
OSS
Output Capacitance
C
RSS
VGS = 0 V, f = 1 MHz, VDS = 75 V
Reverse Transfer Capacitance
Q
G(TOT)
Total Gate Charge
Q
G(TOT)
VGS = 8 V, VDS = 75 V, ID = 35 A
Total Gate Charge
30.7
Q
GS
Gate−to−Source Charge
12.8
Q
SW
Switching Charge
Q
GD
Gate−to−Drain Charge
Q
OSS
V
GP
VGS = 10 V, VDS = 75 V, ID = 35 A
nC
9.4
4.5
Output Charge
VGS = 0 V, VDD = 75 V
95
Plateau Voltage
VGS = 10 V, VDS = 75 V, ID = 35 A
5.1
V
19.8
ns
SWITCHING CHARACTERISTICS (Note 3)
td(ON)
tr
td(OFF)
tf
Turn*On Delay Time
Rise Time
Turn*Off Delay Time
VGS = 10 V, VDS = 75 V, ID = 35 A,
RG = 6 W
Fall Time
4.7
25.5
4.0
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2
NTMFS011N15MC
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
VSD
Forward Diode Voltage
tRR
Reverse Recovery Time
QRR
Reverse Recovery Charge
tRR
Reverse Recovery Time
QRR
Reverse Recovery Charge
VGS = 0 V, IS = 35 A
TJ = 25°C
0.869
TJ = 125°C
0.725
V
VGS = 0 V, dIS/dt = 300 A/ms,
IS = 35 A
48.8
ns
227
nC
VGS = 0 V, dIS/dt = 1000 A/ms,
IS = 35 A
36.4
ns
407
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
NOTES:
4. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RqCA is determined
by the user’s board design.
a) 46°C/W when mounted on
a 1 in2 pad of 2 oz copper.
5.
6.
7.
8.
b) 116°C/W when mounted on
a minimum pad of 2 oz copper.
Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
EAS of 196 mJ is based on starting TJ = 25_C; L = 3 mH, IAS = 12.7 A, VDD = 100 V, VGS = 15 V. 100% tested at L = 0.1 mH, IAS = 41 A.
Pulsed ID please refer to Fig 11 SOA graph for more details.
Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by
thermal & electro−mechanical application board design.
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3
NTMFS011N15MC
200
ID, DRAIN CURRENT (A)
VGS = 10 V
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
180
160
NORMALIZED DRAIN−TO−SOURCE
ON−RESISTANCE
TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)
8V
7V
140
120
100
80
6V
60
40
5V
20
0
0
1
2
3
4
5
VGS = 6 V VGS = 7 V
5
VGS =
8V
4
3
VGS = 10 V
2
1
0
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
0
60
120
180
240
300
ID, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
50
NORMALIZED DRAIN−TO−SOURCE
ON−RESISTANCE
ID = 35 A
VGS = 10 V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−25
200
0
25
75
50
100
125
30
25
TJ = 125°C
20
15
TJ = 25°C
10
5
150
5
4
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. Normalized On−Resistance vs.
Junction Temperature
Figure 4. On−Resistance vs. Gate−to−Source
Voltage
125
100
75
TJ = 25°C
50
25
TJ = 150°C
2
ID = 35 A
35
TJ, JUNCTION TEMPERATURE (°C)
IS, REVERSE DRAIN CURRENT (A)
150
40
0
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
VDS = 10 V
175
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
45
rDS(on), DRAIN−TO−SOURCE
ON−RESISTANCE (mW)
2.0
ID, DRAIN CURRENT (A)
VGS = 5 V
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
2.2
0
6
3
4
TJ = −55°C
5
6
7
VGS = 0 V
100
10
TJ = 25°C
1
0.2
8
TJ = 150°C
TJ = −55°C
0.4
0.6
0.8
1.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source−to−Drain Diode Forward
Voltage vs. Source Current
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4
1.2
NTMFS011N15MC
10K
10
VDD = 25 V
VDS = 75 V
ID = 35 A
TJ = 25°C
8
Ciss
VDD = 50 V
VDD = 75 V
6
4
100
0
10
5
20
15
30
25
1
35
1
100
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain−to−Source
Voltage
100
90
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
0.1
Qg, GATE CHARGE (nC)
100
10
TJ = 100°C
1
0.001
TJ = 25°C
TJ = 125°C
0.01
0.1
10
1
100
VGS = 10 V
60
50
VGS = 8 V
40
30
20
RqJC = 0.85°C/W
25
50
75
100
125
TC, CASE TEMPERATURE (°C)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
150
100K
P(PK), PEAK TRANSIENT POWER (W)
100
1 ms
100 ms
10 ms
10
0.1
70
tAV, TIME IN AVALANCHE (ms)
10 ms
1
80
10
0
1K
ID, DRAIN CURRENT (A)
Crss
VGS = 0 V
TJ = 25°C
f = 1 MHz
10
2
0
Coss
1K
CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)
Single Pulse
RqJC = 0.85°C/W
TC = 25°C
100 ms/DC
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
100
Single Pulse
RqJC = 0.85°C/W
TC = 25°C
10K
1K
100
10
0.00001
0.0001
0.001
0.01
0.1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
1
NTMFS011N15MC
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)
1
50% Duty Cycle
20%
0.1
0.01
10%
5%
PDM
2%
t1
t2
NOTES:
ZqJC(t) = r(t) x RqJC
RqJC = 0.85°C/W
Peak TJ = PDM x ZqJC(t) + TC
Duty Cycle, D = t1/t2
1%
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction−to−Case Transient Thermal Response Curve
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6
0.1
1
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE B
DOCUMENT NUMBER:
DESCRIPTION:
98AON13655G
PQFN8 5X6, 1.27P
DATE 06 JUL 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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