MOSFET - N-Channel
Shielded Gate PowerTrench[
150 V, 14 mW, 61 A
NTMFS015N15MC
Features
•
•
•
•
•
Small Footprint (5 x 6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
100% UIL Tested
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(ON) MAX
ID MAX
150 V
14 mW @ 10 V
61 A
Typical Applications
•
•
•
•
D
Synchronous Rectification
AC−DC and DC−DC Power Supplies
AC−DC Adapters (USB PD) SR
Load Switch
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
S
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
150
V
Gate−to−Source Voltage
VGS
±20
V
ID
61
A
PD
108.7
W
Parameter
Continuous Drain
Current RqJC (Note 2)
Power Dissipation
RqJC (Note 2)
Continuous Drain
Current RqJA
(Notes 1, 2)
Power Dissipation
RqJA (Notes 1, 2)
Pulsed Drain Current
Steady
State
Steady
State
TC = 25°C
N−CHANNEL MOSFET
Pin 1
Top
ID
9.2
A
PD
2.5
W
IDM
302
A
S
S
Power 56
(PQFN8)
CASE 483AE
Bottom
TA = 25°C
TC = 25°C, tp = 100 ms
Operating Junction and Storage Temperature
Range
TJ, Tstg
−55 to
+150
°C
Single Pulse Drain−to−Source Avalanche
Energy (IL = 10 Apk, L = 3 mH)
EAS
150
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
MARKING DIAGRAM
S
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using a 1 in2, 2 oz. Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
D
1515MC
AYWZZ
G
D
D
D
1515MC = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS015N15MC
(Pb−Free/Halogen Free)
Power 56
(PQFN8)
3000 / Tape
& Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2020
May, 2020 − Rev. 1
1
Publication Order Number:
NTMFS015N15MC/D
NTMFS015N15MC
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case − Steady State (Note 2)
Parameter
RqJC
1.15
°C/W
Junction−to−Ambient − Steady State (Notes 1, 2)
RqJA
50
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
150
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
ID = 250 mA, ref to 25°C
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
VGS = 0 V,
VDS = 120 V
V
109
TJ = 25°C
mV/°C
Zero Gate Voltage Drain Current
IDSS
1.0
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 162 mA
VGS(TH)/TJ
ID = 162 mA, ref to 25°C
−7.6
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 29 A
10.2
14
mW
Drain−to−Source On Resistance
RDS(on)
VGS = 8 V, ID = 15 A
11.1
16.2
mW
gFS
VDS = 10 V, ID = 29 A
56
mA
±100
nA
4.5
V
ON CHARACTERISTICS
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Forward Transconductance
2.5
mV/°C
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
2120
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
10.5
Gate−Resistance
RG
0.6
Total Gate Charge
QG(TOT)
27
Threshold Gate Charge
QG(TH)
7
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
4
Plateau Voltage
VGP
5.5
V
Output Charge
QOSS
66
nC
VGS = 0 V, f = 1 MHz, VDS = 75 V
VGS = 10 V, VDS = 75 V; ID = 29 A
VDD = 75 V, VGS = 0 V
595
pF
1.2
W
nC
11
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
16
VGS = 10 V, VDD = 75 V,
ID = 29 A, RG = 6 W
tf
5
ns
21
4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Reverse Recovery Charge
QRR
Reverse Recovery Time
tRR
Reverse Recovery Charge
QRR
VGS = 0 V,
IS = 29 A
TJ = 25°C
VGS = 0 V, VDD = 75 V
dIS/dt = 300 A/ms, IS = 29 A
VGS = 0 V, VDD = 75 V
dIS/dt = 1000 A/ms, IS = 29 A
0.86
49
1.2
V
ns
197
nC
34
ns
345
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NTMFS015N15MC
NOTES:
3. Switching characteristics are independent of operating junction temperatures.
4. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. RqCA is determined
by the user’s board design.
a) 50°C/W when mounted on
a 1 in2 pad of 2 oz copper.
b) 125°C/W when mounted on
a minimum pad of 2 oz copper.
SS
SF
DS
DF
G
SS
SF
DS
DF
G
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3
NTMFS015N15MC
TYPICAL CHARACTERISTICS
6
8.0 V
10 V
RDS(on), NORMALIZED DRAIN−TO−
SOURCE ON−RESISTANCE
160
ID, DRAIN CURRENT (A)
7.0 V
120
80
6.0 V
40
VGS = 5.5 V
0
0
2
1
3
4
5
6
8
7
9
10
4
7V
3
8V
2
10 V
1
0
0
80
40
160
120
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
80
ID = 29 A
VGS = 10 V
2.0
RDS(on), ON−RESISTANCE (mW)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE ON−RESISTANCE
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
ID, DRAIN CURRENT (A)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−75 −50
−25
0
50
25
75
100
125
150
60
40
TJ = 125°C
20
TJ = 25°C
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (°C)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. Normalized On−Resistance vs.
Junction Temperature
Figure 4. On−Resistance vs. Gate−to−Source
Voltage
IS, REVERSE DRAIN CURRENT (A)
VDS = 10 V
120
80
TJ = 25°C
40
TJ = 150°C
2
ID = 29 A
0
160
ID, DRAIN CURRENT (A)
5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
2.2
0
VGS = 6.0 V
5.5 V
3
4
TJ = −55°C
5
6
7
200
100
10
1
0.1
0.01
0.001
8
VGS = 0 V
TJ = 150°C
TJ = −55°C
TJ = 25°C
0
0.2
0.4
0.6
0.8
1.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source−to−Drain Diode Forward
Voltage vs. Source Current
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4
1.2
NTMFS015N15MC
10
10K
VDD = 25 V
ID = 29 A
8
CISS
VDD = 75 V
VDD = 50 V
CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
6
4
0
0
12
6
18
1
30
24
100 150
10
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain−to−Source
Voltage
100K
VGS = 10 V
PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS = 8 V
30
20
10
RqJC = 1.15°C/W
50
25
75
125
100
10K
1K
100
10
0.00001
150
0.0001
0.001
0.01
0.1
TC, CASE TEMPERATURE (°C)
t, PULSE WIDTH (s)
Figure 9. Drain Current vs. Case Temperature
Figure 10. Peak Power
100
ID, DRAIN CURRENT (A)
1000
TJ(initial) = 25°C
10
TJ(initial) = 100°C
TJ(initial) = 150°C
1
0.1
Qg, GATE CHARGE (nC)
40
0
CRSS
10
f = 1 MHz
VGS = 0 V
60
50
COSS
100
2
70
IAS, AVALANCHE CURRENT(A)
1K
0.001
0.01
0.1
1
10
100
TC = 25°C
Single Pulse
RqJC = 1.15°C/W
100
1
10 ms
100 ms
10
0.1
1 ms
10 ms
1
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
100 ms/DC
10
100 200
tAV, TIME IN AVALANCHE (mS)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Unclamped Inductive Switching
Capability
Figure 12. Forward Bias Safe Operating Area
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5
NTMFS015N15MC
TYPICAL CHARACTERISTICS
ZqJC, EFFECTIVE TRANSIENT
THERMAL RESISTANCE (°C/W)
10
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.001
P DM
0.01
Single Pulse
t1
t2
0.00001
0.0001
0.001
0.01
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Impedance
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6
Notes:
RqJC = 1.15°C/W
Peak TJ = PDM x ZqJC (t) + TC
Duty Cycle, D = t1/t2
0.1
1
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE B
DOCUMENT NUMBER:
DESCRIPTION:
98AON13655G
PQFN8 5X6, 1.27P
DATE 06 JUL 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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