NTMFS0D5N03CT1G

DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel, SO8-FL V(BR)DSS 30 V, 0.52 mW, 464 A RDS(ON) MAX ID MAX 0.52 mW @ 10 V 30 V 464 A 0.78 mW @ 4.5 V NTMFS0D5N03C D (5−8) Features • Advanced Package (5x6mm) with Excellent Thermal Conduction • Ultra Low RDS(on) to Improve System Efficiency • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS G (4) Compliant S (1,2,3) Applications • • • • • N−CHANNEL MOSFET ORing Motor Drive Power Load Switch DC−DC Converters Battery Management and Protection MARKING DIAGRAMS D DFN5 (SO−8FL) CASE 506EZ MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 464 A Continuous Drain Current RqJC (Note 2) Power Dissipation RqJC (Note 2) Continuous Drain Current RqJA (Notes 1, 2) Power Dissipation RqJA (Notes 1, 2) Pulsed Drain Current TC = 25°C Steady State TC =100°C TC = 25°C TA = 25°C Steady State PD ID 200 W A 65 PD 3.9 W TA = 25°C, tp = 10 ms IDM 900 A Operating Junction and Storage Temperature Range Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) D D A Y W ZZ = Assembly Location = Year = Work Week = Lot Traceabililty ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 46 TA = 25°C Single Pulse Drain−to−Source Avalanche Energy (IL = 96 Apk) D 0D5N3C AYWZZ 328 TA = 100°C Source Current (Body Diode) 1 S S S G IS 166 A EAS 467 mJ TJ, TSTG −55 to +175 °C TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in2 pad, 2 oz Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. © Semiconductor Components Industries, LLC, 2020 October, 2021 − Rev. 4 1 Publication Order Number: NTMFS0D5N03C/D NTMFS0D5N03C THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case – Steady State (Note 1) Parameter RqJC 0.8 Junction−to−Ambient – Steady State (Note 1) RqJA 38 Unit °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 250 mA. ref to 25°C Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS VGS = 0 V, VDS = 30 V V 11 mV/°C TJ = 25°C 1.0 TJ = 125°C 100 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 330 mA VGS(TH)/TJ ID = 330 mA. ref to 25°C −5.9 mA 100 nA 2.2 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Threshold Temperature Coefficient 1.3 mV/°C Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 30 A 0.43 0.52 mW Drain−to−Source On Resistance RDS(on) VGS = 4.5 V, ID = 30 A 0.62 0.78 mW Forward Transconductance gFS VDS = 3 V, ID = 30 A 208 S Gate Resistance RG TA = 25°C 0.4 W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 146 Total Gate Charge QG(TOT) 80 Threshold Gate Charge QG(TH) Gate−to−Drain Charge QGD Gate−to−Source Charge QGS Total Gate Charge 13000 VGS = 0 V, VDS = 15 V, f = 1 MHz VGS = 4.5 V, VDS = 15 V; ID = 30 A 6540 pF 20 nC 13 33 QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 178 nC SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 29 VGS = 10 V, VDS = 15 V, ID = 30 A, RG = 3.0 W tf 13 ns 108 20 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = 0 V, IS = 30 A TJ = 25°C 0.75 TJ = 125°C 0.58 VGS = 0 V, dIS/dt = 100 A/ms, VDS = 15 V, IS = 30 A 1.2 V 103 ns 160 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS0D5N03C TYPICAL CHARACTERISTICS 500 ID, DRAIN CURRENT (A) 3.2 V 3.4 V 3.0 V 300 250 2.8 V 200 150 2.6 V 100 0 2.4 V 0 0.5 1.0 1.5 2.0 2.5 300 250 200 TJ = 25°C 150 100 3.0 1.5 1.0 2.0 TJ = −55°C 2.5 3.0 3.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 1.6 1.4 1.2 1.0 0.8 0.6 0.4 3 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 4.0 1.0 TJ = 25°C 0.8 VGS = 4.5 V 0.6 VGS = 10 V 0.4 0.2 0 50 100 150 200 250 300 350 400 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.9 1M VGS = 10 V ID = 30 A TJ = 175°C 100K 1.5 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 0.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1.8 1.7 TJ = 125°C 0 0 TJ = 25°C ID = 30 A 2 400 350 50 2.0 0.2 VDS = 3 V 450 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 400 350 50 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 500 VGS = 10 V to 3.6 V 450 1.3 1.1 0.9 TJ = 150°C TJ = 125°C 10K TJ = 85°C 1K 100 TJ = 25°C 10 0.7 0.5 −50 −25 0 25 50 75 100 125 150 175 1 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 30 NTMFS0D5N03C TYPICAL CHARACTERISTICS 10K COSS 1K 100 10 VGS = 0 V TJ = 25°C f = 1 MHz 0 10K 5 CRSS 10 15 20 25 30 4 QGS QGD 3 VDS = 15 V ID = 30 A TJ = 25°C 2 1 0 0 30 60 90 120 150 180 100 VGS = 0 V td(off) tr 10 1 10 10 1 TJ = 125°C 0.1 100 TJ = 25°C 0.3 0.4 0.5 0.6 TJ = −55°C 0.7 0.8 0.9 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 1K 10 ms 100 IPEAK, DRAIN CURRENT (A) IDS, DRAIN CURRENT (A) 6 5 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge td(on) 100 ms 10 0.1 8 7 Figure 7. Capacitance Variation 100 1 9 QG, TOTAL GATE CHARGE (nC) tf 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS = 10 V VDS = 15 V ID = 30 A 1K t, TIME (ns) VGS, GATE−TO−SOURCE VOLTAGE (V) CISS IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) 100K TC = 25°C Single Pulse VGS ≤ 10 V 1 ms 10 ms 100 ms 1s RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 TJ(initial) = 25°C 10 1 0.00001 100 TJ(initial) = 100°C 0.0001 0.001 0.01 0.1 1 VDS, DRAIN−TO−SOUORCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 10 NTMFS0D5N03C TYPICAL CHARACTERISTICS 1 50% Duty Cycle ZqJC (°C/W) 20% 0.1 10% 5% 2% 0.01 1% Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device NTMFS0D5N03CT1G Marking Package Shipping† 0D5N3C DFN5 (Pb−Free) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 506EZ ISSUE A DATE 25 AUG 2021 1 SCALE 2:1 q q GENERIC MARKING DIAGRAM* 1 XXXXXX AYWZZ XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON24855H DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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