NTMFS0D6N03CT1G

DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel, SO8-FL V(BR)DSS 30 V, 0.62 mW, 433 A RDS(ON) MAX ID MAX 0.62 mW @ 10 V 30 V 433 A 0.9 mW @ 4.5 V NTMFS0D6N03C D (5−8) Features • Advanced Package (5x6mm) with Excellent Thermal Conduction • Ultra Low RDS(on) to Improve System Efficiency • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS G (4) Compliant S (1,2,3) Applications • • • • N−CHANNEL MOSFET ORing Motor Drive Power Load Switch Battery Management and Protection MARKING DIAGRAMS D DFN5 (SO−8FL) CASE 506EZ MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V 433 A Continuous Drain Current RqJC (Note 2) Power Dissipation RqJC (Note 2) Continuous Drain Current RqJA (Notes 1, 2) Power Dissipation RqJA (Notes 1, 2) Pulsed Drain Current TC = 25°C Steady State Steady State ID TC =100°C 306 TC = 25°C PD 200 W TA = 25°C ID 60 A TA = 100°C 42 TA = 25°C PD 3.9 W TA = 25°C, tp = 10 ms IDM 900 A IS 156 A EAS 1032 mJ TJ, TSTG −55 to +175 °C TL 260 °C Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL = 45.4 Apk) Operating Junction and Storage Temperature Range Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 1 S S S G D 0D6N3C AYWZZ D D A Y W ZZ = Assembly Location = Year = Work Week = Lot Traceabililty ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in2 pad, 2 oz Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. © Semiconductor Components Industries, LLC, 2020 October, 2021 − Rev. 4 1 Publication Order Number: NTMFS0D6N03C/D NTMFS0D6N03C THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case – Steady State (Note 1) Parameter RqJC 0.8 Junction−to−Ambient – Steady State (Note 1) RqJA 38 Junction−to−Ambient – Steady State (Note 2) RqJA 134 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 250 mA. ref to 25°C Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS VGS = 0 V, VDS = 30 V V 12 mV/°C TJ = 25°C 1.0 TJ = 125°C 100 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 280 mA mA 100 nA 2.2 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Threshold Temperature Coefficient 1.3 VGS(TH)/TJ ID = 280 mA. ref to 25°C −5.7 Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 30 A 0.52 0.62 mV/°C mW Drain−to−Source On Resistance RDS(on) VGS = 4.5 V, ID = 30 A 0.72 0.9 mW Forward Transconductance gFS VDS = 3 V, ID = 30 A 150 S Gate Resistance RG TA = 25°C 0.4 W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 161 Total Gate Charge QG(TOT) 65 Threshold Gate Charge QG(TH) Gate−to−Drain Charge QGD Gate−to−Source Charge QGS Total Gate Charge 10500 VGS = 0 V, VDS = 15 V, f = 1 MHz VGS = 4.5 V, VDS = 15 V; ID = 30 A 5740 pF 16 nC 12 27 QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 145 nC SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 24 VGS = 10 V, VDS = 15 V, ID = 30 A, RG = 3.0 W tf 12 ns 89 19 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = 0 V, IS = 30 A TJ = 25°C 0.75 TJ = 125°C 0.60 VGS = 0 V, dIS/dt = 100 A/ms, VDS = 15 V, IS = 30 A 1.2 V 97 ns 135 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS0D6N03C TYPICAL CHARACTERISTICS 450 450 3.4 V 300 3.0 V 250 200 2.8 V 150 2.6 V 100 2.4 V 50 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) VGS = 10 V to 3.6 V 350 0 0.5 1.0 1.5 2.0 2.5 3.0 TJ = 25°C 100 TJ = 125°C 0.5 1.5 1.0 TJ = −55°C 2.5 2.0 3.0 3.5 Figure 2. Transfer Characteristics 1.2 1.0 0.8 0.6 0.4 0.2 3 4 5 6 7 8 9 10 VGS, GATE VOLTAGE (V) Figure 3. On−Resistance vs. Gate−to−Source Voltage 4.0 1.0 TJ = 25°C 0.8 VGS = 4.5 V 0.6 VGS = 10 V 0.4 0.2 0 0 50 100 150 200 250 300 350 400 ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1000000 VGS = 10 V ID = 30 A TJ = 175°C 100000 1.5 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 150 Figure 1. On−Region Characteristics 1.4 1.3 1.1 0.9 TJ = 150°C 10000 TJ = 125°C 1000 TJ = 85°C 100 TJ = 25°C 10 0.7 0.5 −50 200 VGS, GATE−TO−SOURCE VOLTAGE (V) 1.6 1.7 250 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1.8 1.9 300 0 0 TJ = 25°C ID = 30 A 2 350 50 2.0 0 VDS = 3 V 400 3.2 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 400 −25 0 25 50 75 100 125 150 175 1 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 30 NTMFS0D6N03C TYPICAL CHARACTERISTICS CISS 10,000 C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) 100,000 COSS 1000 100 0 1000 5 10 25 30 5 QGS 4 QGD 3 VDS = 15 V ID = 30 A TJ = 25°C 2 1 0 0 30 60 120 90 150 100 VGS = 10 V VDS = 15 V ID = 30 A VGS = 0 V td(off) tf tr 1 10 10 1 TJ = 125°C 0.1 0.3 100 0.4 0.5 TJ = 25°C 0.6 0.7 TJ = −55°C 0.8 0.9 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 10 ms IPEAK, DRAIN CURRENT (A) IDS, DRAIN CURRENT (A) 6 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1000 100 100 ms 10 0.1 7 Figure 7. Capacitance Variation 10 1 8 QG, TOTAL GATE CHARGE (nC) td(on) 1 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 t, TIME (ns) 20 15 IS, SOURCE CURRENT (A) 10 CRSS VGS = 0 V TJ = 25°C f = 1 MHz 10 TC = 25°C Single Pulse VGS ≤ 10 V 1 ms 10 ms 100 ms 1s RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 10 TJ(initial) = 100°C 1 0.00001 100 0.0001 0.001 TJ(initial) = 25°C 0.01 0.1 1 VDS, DRAIN−TO−SOUORCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 10 NTMFS0D6N03C TYPICAL CHARACTERISTICS 1 50% Duty Cycle ZqJC (°C/W) 20% 0.1 10% 5% 2% 0.01 1% Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device NTMFS0D6N03CT1G Marking Package Shipping† 0D6N3C DFN5 (Pb−Free) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 506EZ ISSUE A DATE 25 AUG 2021 1 SCALE 2:1 q q GENERIC MARKING DIAGRAM* 1 XXXXXX AYWZZ XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON24855H DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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