NTMFS0D7N03CGT1G

MOSFET - Power, Single N-Channel, SO8-FL 30 V, 0.65 mW, 409 A NTMFS0D7N03CG Features • • • • Wide SOA to Improve Inrush Current Management Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 30 V 0.65 mW @ 10 V 409 A Applications • Hot Swap Application • Power Load Switch • Battery Management and Protection D (5−8) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter G (4) Symbol Value Unit Drain−to−Source Voltage VDSS 30 V S (1,2,3) Gate−to−Source Voltage VGS ±20 V N−CHANNEL MOSFET ID 409 A Continuous Drain Current RqJC (Note 2) Power Dissipation RqJC (Note 2) Continuous Drain Current RqJA (Notes 1, 2) Power Dissipation RqJA (Notes 1, 2) Pulsed Drain Current TC = 25°C Steady State TC =100°C TC = 25°C TA = 25°C Steady State 289 PD ID TA = 100°C 187 4.0 W TA = 25°C, tp = 10 ms IDM 900 A IS 155 A EAS 1080 mJ TJ, TSTG −55 to +175 °C 260 °C Operating Junction and Storage Temperature Range Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) DFN5 (SO−8FL) CASE 506EZ 42 PD Single Pulse Drain−to−Source Avalanche Energy (IL = 40.8 Apk) D A 59 TA = 25°C Source Current (Body Diode) MARKING DIAGRAMS W TL 1 S S S G D 0D7NG AYWZZ D D A Y W ZZ = Assembly Location = Year = Work Week = Lot Traceabililty ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in2 pad, 2 oz Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. © Semiconductor Components Industries, LLC, 2019 June, 2021 − Rev. 6 1 Publication Order Number: NTMFS0D7N03CG/D NTMFS0D7N03CG THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case – Steady State (Note 1) Parameter RqJC 0.8 Junction−to−Ambient – Steady State (Note 1) RqJA 38 Junction−to−Ambient – Steady State (Note 2) RqJA 134 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 250 mA. ref to 25°C Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS VGS = 0 V, VDS = 30 V V 11 mV/°C TJ = 25°C 1.0 TJ = 125°C 100 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 280 mA VGS(TH)/TJ ID = 280 mA. ref to 25°C −5.1 RDS(on) VGS = 10 V, ID = 30 A 0.55 Forward Transconductance gFS VDS = 3 V, ID = 30 A 100 Gate Resistance RG TA = 25°C 0.4 3.0 8600 12300 16000 mA 100 nA 2.2 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On Resistance 1.3 mV/°C 0.65 mW S W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS 4000 5800 7500 Reverse Transfer Capacitance CRSS 50 88 360 Total Gate Charge QG(TOT) 103 147 191 Threshold Gate Charge QG(TH) 13 19 25 Gate−to−Source Charge QGS 24 34 44 Gate−to−Drain Charge QGD 5.2 8.6 20.5 VGS = 0 V, VDS = 15 V, f = 1 MHz VGS = 10 V, VDS = 15 V; ID = 30 A pF nC SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 28 VGS = 10 V, VDS = 15 V, ID = 30 A, RG = 3.0 W tf 13 ns 85 16 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = 0 V, IS = 30 A TJ = 25°C 0.78 TJ = 125°C 0.62 VGS = 0 V, dIS/dt = 100 A/ms, VDS = 15 V, IS = 30 A 1.2 V 98 ns 143 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS0D7N03CG TYPICAL CHARACTERISTICS 500 350 ID, DRAIN CURRENT (A) 400 450 5.0 V VGS = 10 V to 6 V 4.5 V 300 250 4.0 V 200 3.5 V 150 100 3.0 V 50 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 0 0.5 1.0 1.5 2.0 2.5 3.0 300 TJ = 25°C 250 200 150 100 TJ = 125°C 0 1.5 2.0 TJ = −55°C 2.5 3.0 3.5 4.0 Figure 2. Transfer Characteristics 4 3 2 1 5 4 6 7 8 9 10 VGS, GATE VOLTAGE (V) 4.5 5.0 1.0 TJ = 25°C 0.8 0.6 VGS = 10 V 0.4 0.2 0 5 10 15 20 25 35 30 40 45 50 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.0 1.E+05 VGS = 10 V ID = 30 A TJ = 175°C 1.E+04 TJ = 150°C 1.5 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 1.5 Figure 1. On−Region Characteristics TJ = 25°C ID = 30 A 1.0 TJ = 125°C 1.E+03 0.5 0 −50 1.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 5 3 400 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 6 0 VDS = 3 V 350 50 0 2.5 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 500 5.5 V 450 TJ = 85°C 1.E+02 −25 0 25 50 75 100 125 150 175 1.E+01 TJ = 25°C 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 30 NTMFS0D7N03CG TYPICAL CHARACTERISTICS CISS 10K C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) 100K COSS 1K 10 VGS = 0 V TJ = 25°C f = 1 MHz 0 1000 5 CRSS 10 15 20 25 8 7 6 5 4 QGD QGS 3 VDS = 15 V ID = 30 A TJ = 25°C 2 1 0 0 60 30 90 120 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 100 td(off) VGS = 10 V VDS = 15 V ID = 30 A tf tr td(on) 10 1 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 t, TIME (ns) 30 IS, SOURCE CURRENT (A) 100 10 1 10 VGS = 0 V 10 1 0.1 100 150 TJ = 125°C 0.3 0.4 TJ = −55°C TJ = 25°C 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 1000 10 ms 100 Curve is based on 10% de−rating from typical failure points 0.5 ms 1 ms 10 1 0.1 IPEAK (A) ID, DRAIN CURRENT (A) TJ(initial) = 25°C 10 ms TC = 25°C Single Pulse VGS ≤ 10 V 1s RDS(on) Limit Thermal Limit Package Limit 0.1 1 TJ(initial) = 100°C 10 1 10 100 0.00001 0.0001 0.001 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 0.01 NTMFS0D7N03CG TYPICAL CHARACTERISTICS 1 ZqJC (°C/W) 50% Duty Cycle 0.1 0.01 20% 10% 5% 2% 1% Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 13. Thermal Impedance DEVICE ORDERING INFORMATION Device NTMFS0D7N03CGT1G Marking Package Shipping† 0D7NG DFN5 (Pb−Free) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 506EZ ISSUE A DATE 25 AUG 2021 1 SCALE 2:1 q q GENERIC MARKING DIAGRAM* 1 XXXXXX AYWZZ XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON24855H DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative