DATA SHEET
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MOSFET - Power, Single
N-Channel, SO8-FL
V(BR)DSS
30 V, 0.74 mW, 337 A
RDS(ON) MAX
ID MAX
0.74 mW @ 10 V
30 V
337 A
1.15 mW @ 4.5 V
NTMFS0D8N03C
D (5−8)
Features
• Advanced Package (5x6mm) with Excellent Thermal Conduction
• Ultra Low RDS(on) to Improve System Efficiency
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
G (4)
Compliant
S (1,2,3)
Applications
•
•
•
•
•
N−CHANNEL MOSFET
ORing
Motor Drive
Power Load Switch
DC−DC Converters
Battery Management and Protection
MARKING
DIAGRAMS
D
S
SO−8 FLAT LEAD
S
CASE 488AA
S
STYLE 1
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
337
A
Continuous Drain
Current RqJC
(Note 2)
Power Dissipation
RqJC (Note 2)
Continuous Drain
Current RqJA
(Notes 1, 2)
Power Dissipation
RqJA (Notes 1, 2)
Pulsed Drain Current
TC = 25°C
Steady
State
TC =100°C
TC = 25°C
TA = 25°C
Steady
State
PD
ID
150
W
A
54
PD
3.8
W
TA = 25°C, tp = 10 ms
IDM
900
A
Operating Junction and Storage Temperature
Range
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceabililty
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
38
TA = 25°C
Single Pulse Drain−to−Source Avalanche
Energy (IL = 51.9 Apk)
D
D
238
TA = 100°C
Source Current (Body Diode)
1
D
0D8N3C
AYWZZ
IS
125
A
EAS
135
mJ
TJ, TSTG
−55 to
+175
°C
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in2 pad, 2 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
© Semiconductor Components Industries, LLC, 2020
October, 2021 − Rev. 3
1
Publication Order Number:
NTMFS0D8N03C/D
NTMFS0D8N03C
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case – Steady State (Note 1)
Parameter
RqJC
1.0
Junction−to−Ambient – Steady State (Note 1)
RqJA
39
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
ID = 250 mA. ref to 25°C
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
VGS = 0 V,
VDS = 30 V
V
13
mV/°C
TJ = 25°C
1.0
TJ = 125°C
100
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 200 mA
VGS(TH)/TJ
ID = 280 mA. ref to 25°C
−5.4
mA
100
nA
2.2
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Threshold Temperature Coefficient
1.3
mV/°C
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 20 A
0.62
0.74
mW
Drain−to−Source On Resistance
RDS(on)
VGS = 4.5 V, ID = 20 A
0.92
1.15
mW
Forward Transconductance
gFS
VDS = 3 V, ID = 20 A
136
S
Gate Resistance
RG
TA = 25°C
0.92
W
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
122
Total Gate Charge
QG(TOT)
50
Threshold Gate Charge
QG(TH)
Gate−to−Drain Charge
QGD
Gate−to−Source Charge
QGS
Total Gate Charge
7690
VGS = 0 V, VDS = 15 V, f = 1 MHz
VGS = 4.5 V, VDS = 15 V; ID = 20 A
4000
pF
11
nC
9
18
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 20 A
110
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
20
VGS = 10 V, VDS = 15 V,
ID = 20 A, RG = 3.0 W
tf
10
ns
81
15
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Reverse Recovery Charge
QRR
VGS = 0 V,
IS = 10 A
TJ = 25°C
0.72
TJ = 125°C
0.6
VGS = 0 V, dIS/dt = 100 A/ms,
VDS = 15 V, IS = 20 A
1.2
V
78
ns
104
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS0D8N03C
TYPICAL CHARACTERISTICS
450
300
3.2 V
250
200
3.0 V
150
2.8 V
100
2.6 V
50
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
3.4 V
350
0
0.5
1.0
1.5
2.0
2.5
3.0
250
200
150
TJ = 25°C
100
1.0
1.5
TJ = −55°C
2.5
2.0
3.0
3.5
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
0.4
3
4
5
6
7
9
8
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
4.0
1.4
TJ = 25°C
1.2
VGS = 4.5 V
1.0
0.8
VGS = 10 V
0.6
0.4
0.2
0
50
100
150
200
250
300
350 400 450
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.9
1M
VGS = 10 V
ID = 20 A
TJ = 175°C
100K
1.5
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
0.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
1.8
1.7
TJ = 125°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ = 25°C
ID = 20 A
2
300
0
0
2.0
0.2
350
50
2.4 V
0
VDS = 3 V
400
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
400
450
3.6 V
VGS = 10 V to 4 V
1.3
1.1
0.9
TJ = 150°C
TJ = 125°C
10K
TJ = 85°C
1K
TJ = 25°C
100
10
0.7
0.5
−50 −25
0
25
50
75
100
125
150
175
1
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
30
NTMFS0D8N03C
TYPICAL CHARACTERISTICS
COSS
1K
100
10
CRSS
VGS = 0 V
TJ = 25°C
f = 1 MHz
0
1K
t, TIME (ns)
VGS, GATE−TO−SOURCE VOLTAGE (V)
CISS
10K
5
10
20
15
25
30
6
5
4
QGS
3
QGD
VDS = 15 V
ID = 20 A
TJ = 25°C
2
1
0
0
30
60
120
90
100
VGS = 10 V
VDS = 15 V
ID = 20 A
VGS = 0 V
td(off)
tf
tr
1
10
10
1
0.1
100
TJ = 125°C
TJ = 25°C
0.3
0.4
0.5
0.6
0.7
TJ = −55°C
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
IPEAK, DRAIN CURRENT (A)
1K
IDS, DRAIN CURRENT (A)
7
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
10 ms
100
100 ms
10
0.1
8
Figure 7. Capacitance Variation
td(on)
1
9
QG, TOTAL GATE CHARGE (nC)
100
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
IS, SOURCE CURRENT (A)
C, CAPACITANCE (pF)
100K
TC = 25°C
Single Pulse
VGS ≤ 10 V
1 ms
10 ms
100 ms
1s
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
TJ(initial) = 25°C
10
1
0.00001
100
TJ(initial) = 100°C
0.0001
0.001
0.01
0.1
1
VDS, DRAIN−TO−SOUORCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
10
NTMFS0D8N03C
TYPICAL CHARACTERISTICS
10
ZqJC (°C/W)
1 50% Duty Cycle
0.1
20%
10%
5%
2%
0.01
1%
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
NTMFS0D8N03CT1G
Marking
Package
Shipping†
0D8N3C
DFN5
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
DATE 25 JUN 2018
SCALE 2:1
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
A1
4
TOP VIEW
C
DETAIL A
0.10 C
SEATING
PLANE
A
0.10 C
SIDE VIEW
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
GENERIC
MARKING DIAGRAM*
DETAIL A
1
0.10
b
C A B
0.05
c
8X
XXXXXX
AYWZZ
e/2
e
L
1
4
K
RECOMMENDED
SOLDERING FOOTPRINT*
E2
PIN 5
(EXPOSED PAD)
L1
M
2X
0.495
4.560
2X
1.530
G
D2
2X
BOTTOM VIEW
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
0.475
3.200
4.530
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
1.330
STYLE 2:
2X
PIN 1. ANODE
0.905
2. ANODE
3. ANODE
4. NO CONNECT
0.965
5. CATHODE
1
4X
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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