NTMFS1D15N03CGT1G

MOSFET - Power, Single N-Channel, SO8-FL 30 V, 1.15 mW, 245 A NTMFS1D15N03CG Features • Advanced Package (5x6 mm) with Excellent Thermal Conduction • Ultra Low RDS(on) to Improve System Efficiency • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Hot Swap Application • Power Load Switch • Battery Management and Protection www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 30 V 1.15 mW @ 10 V 245 A D (5) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 245 A Parameter Continuous Drain Current RqJC (Note 2) TC = 25°C Power Dissipation RqJC (Note 2) Continuous Drain Current RqJA (Notes 1, 2) Power Dissipation RqJA (Notes 1, 2) Pulsed Drain Current Steady State Steady State TC = 100°C S (1,2,3) 173 TC = 25°C PD 124 W TA = 25°C ID 43 A TA = 100°C TA = 25°C TA = 25°C, tp = 10 ms Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 23.2 A) Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) N−CHANNEL MOSFET MARKING DIAGRAM 30 PD 3.8 W IDM 900 A IS 112 A EAS 354 mJ TJ, Tstg −55 to + 175 °C TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter G (4) Symbol Value Unit °C/W Junction−to−Case − Steady State (Note 1) RqJC 1.2 Junction−to−Ambient − Steady State (Note 1) RqJA 40 1 DFN5 (SO−8FL) CASE 488AA STYLE 1 D S S S G D 1D15NG AYWZZ D D 1D15NG= Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information on page 5 of this data sheet. in2, 1. Surface−mounted on FR4 board using a 1 2 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown. They are not constants and are only valid for the particular conditions noted. Actual continuous current will be limited by thermal & electro−mechanical application board design. RqCA is determined by the user’s board design. © Semiconductor Components Industries, LLC, 2019 April, 2021 − Rev. 6 1 Publication Order Number: NTMFS1D15N03CG/D NTMFS1D15N03CG ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 250 mA, ref to 25°C Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VGS = 0 V, VDS = 30 V V 14 mV/°C TJ = 25°C 1.0 TJ = 125°C 100 IGSS VDS = 0 V, VGS = 20 V 100 mA nA ON CHARACTERISTICS (Note 3) VGS(TH) VGS = VDS, ID = 160 mA VGS(TH)/TJ ID = 160 mA, ref to 25°C −4.7 RDS(on) VGS = 10 V, ID = 20 A 0.92 Forward Transconductance gFS VDS = 3 V, ID = 20 A 61 Gate Resistance RG TA = 25°C 1.7 Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On Resistance 1.3 2.2 V mV/°C 1.15 mW W CHARGES & CAPACITANCES Input Capacitance CISS Output Capacitance COSS 7300 Reverse Transfer Capacitance CRSS 99 Total Gate Charge QG(TOT) 94 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 6.9 td(ON) 18 VGS = 0 V, VDS = 15 V, f = 1 MHz VGS = 10 V, VDS = 15 V; ID = 20 A 3600 pF 11 nC 19 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 20 A, RG = 3 W tf 13 ns 72 15 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = 0 V, IS = 10 A TJ = 25°C 0.75 TJ = 125°C 0.60 VGS = 0 V, VDS = 15 V, IS = 20 A, dIS/dt = 100 A/ms 1.2 V 77 ns 102 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS1D15N03CG TYPICAL CHARACTERISTICS VGS = 10 V to 6 V 250 5.0 V 200 4.5 V 150 4.0 V 100 3.5 V 50 3.0 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 VDS = 3 V 300 0 0.5 1.0 1.5 2.0 2.5 TJ = 25°C 150 100 TJ = 125°C 3.0 4.5 3 4 5 6 7 8 9 10 VGS, GATE VOLTAGE (V) TJ = 25°C 6.0 4.0 2.0 VGS = 10 V 0 0 20 40 60 80 ID, DRAIN CURRENT (A) 1.E−04 TJ = 175°C 1.E−05 TJ = 150°C IDSS, LEAKAGE (nA) 1.6 1.4 TJ = 125°C 1.E−06 1.2 1.0 TJ = 85°C 1.E−07 0.8 0.6 1.E−08 TJ = 25°C 0.4 0 100 120 140 160 180 200 Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 10 V ID = 20 A −25 5.0 8.0 Figure 3. On−Resistance vs. Gate−to−Source Voltage RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 4.0 Figure 2. Transfer Characteristics 2.0 0.2 −50 3.5 Figure 1. On−Region Characteristics 4.0 2.0 3.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 6.0 1.8 2.5 2.0 1.5 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 20 A 2 200 0 1.0 8.0 0 250 50 2.5 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 300 350 5.5 V ID, DRAIN CURRENT (A) 350 25 50 75 100 125 150 175 1.E−09 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 30 NTMFS1D15N03CG TYPICAL CHARACTERISTICS CISS 10,000 C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) 100,000 COSS 1000 100 0 1000 5 10 15 25 30 8 7 6 5 4 QGS QGD 3 VDS = 15 V ID = 20 A TJ = 25°C 2 1 0 0 10 20 30 40 50 60 70 80 90 100 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 VGS = 10 V VDS = 15 V ID = 20 A VGS = 0 V td(off) tf td(on) tr 10 1 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 t, TIME (ns) 20 IS, SOURCE CURRENT (A) 10 CRSS VGS = 0 V TJ = 25°C f = 1 MHz 10 1 10 8 6 4 2 0 0.3 100 TJ = 125°C 0.4 TJ = 25°C 0.5 0.6 TJ = −55°C 0.7 0.8 0.9 1 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 1000 10 ms 100 ms TJ(initial) = 25°C 1 ms 10 1 0.1 TC = 25°C Single Pulse VGS ≤ 10 V IPEAK (A) IDS (A) 100 10 ms Curve is based on 10% de−rating from typical failure points 100 ms RDS(on) Limit Thermal Limit Package Limit 0.1 10 1 1 0.00001 100 TJ(initial) = 100°C 10 0.0001 0.001 VDS (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 0.01 NTMFS1D15N03CG TYPICAL CHARACTERISTICS 10 ZqJC (°C/W) 1 50% Duty Cycle 0.1 0.01 20% 10% 5% 2% 1% Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 13. Thermal Impedance DEVICE ORDERING INFORMATION Device NTMFS1D15N03CGT1G Marking Package Shipping† 1D15NG DFN5 (Pb−Free) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative