NTMFS4826NET1G

NTMFS4826NE Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability These are Pb−Free Devices* http://onsemi.com V(BR)DSS Applications 30 V • CPU Power Delivery • DC−DC Converters • High Side Switching Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 15 A TA = 25°C Continuous Drain Current RqJA (Note 1) TA = 85°C 2.16 W Continuous Drain Current RqJA v 10 sec TA = 25°C ID 24.3 A Power Dissipation RqJA, t v 10 sec TA = 25°C PD 5.67 W TA = 25°C ID 9.5 A TA = 85°C 6.9 TA = 25°C PD 0.87 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 66 A Power Dissipation RqJC (Note 1) TC = 25°C PD 41.7 W TA = 25°C IDM 132 A TA = 25°C IDmaxpkg 100 A TJ, TSTG −40 to +150 °C IS 41.7 A TC = 85°C tp=10ms Current limited by package Operating Junction and Storage Temperature Source Current (Body Diode) 47.8 Drain to Source dV/dt dV/dt 6 V/ns Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, IL = 27 Apk, L = 0.3 mH, RG = 25 W) EAS 109 mJ Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2010 December, 2010 − Rev. 0 55 A G (4) MARKING DIAGRAM 17.5 Power Dissipation RqJA (Note 2) Pulsed Drain Current 8.7 mW @ 4.5 V S (1,2,3) PD Steady State 66 A N−CHANNEL MOSFET TA = 25°C Continuous Drain Current RqJA (Note 2) 5.9 mW @ 10 V 10.8 Power Dissipation RqJA (Note 1) TA = 85°C ID MAX D (5,6) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter RDS(ON) MAX 1 D 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 S S S G 4826NE AYWWG G D D D A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NTMFS4826NET1G SO−8FL (Pb−Free) 1500 / Tape & Reel NTMFS4826NET3G SO−8FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: NTMFS4826NE/D NTMFS4826NE THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case (Drain) Parameter RqJC 3.0 Junction−to−Ambient – Steady State (Note 1) RqJA 57.8 Junction−to−Ambient – Steady State (Note 2) RqJA 143.5 Junction−to−Ambient − t v 10 sec RqJA 22.1 Junction−to−Top RqJT 9.7 Unit °C/W 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 25 VGS = 0 V, VDS = 24 V mV/°C TJ = 25 °C 1 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±16 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.5 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance VGS(TH)/TJ RDS(on) 1.45 1.8 4.6 VGS = 10 V to 11.5 V ID = 30 A 4.3 ID = 15 A 4.2 VGS = 4.5 V ID = 30 A 6.6 ID = 15 A 6.5 gFS VDS = 1.5 V, ID = 30 A mV/°C 5.9 8.7 62 mW S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 170 Total Gate Charge QG(TOT) 13.5 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge 1850 VGS = 0 V, f = 1 MHz, VDS = 12 V VGS = 4.5 V, VDS = 15 V; ID = 30 A 333 1.7 5.1 pF 20 nC 4.5 QG(TOT) VGS = 11.5 V, VDS = 15 V, ID = 30 A 32 nC SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 14.4 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 39.8 18.6 5.2 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns NTMFS4826NE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 4) td(ON) Turn−On Delay Time Rise Time 9.5 tr Turn−Off Delay Time td(OFF) Fall Time 22 VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W ns 25 tf 4.6 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time VGS = 0 V, IS = 30 A TJ = 25°C 0.84 TJ = 125°C 0.73 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge 1.0 V 13.2 8.5 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A ns 4.7 QRR 3.5 nC Source Inductance LS 0.93 nH Drain Inductance LD Gate Inductance LG Gate Resistance RG PACKAGE PARASITIC VALUES 0.005 TA = 25°C 1.84 0.9 W 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. 130 10 V 120 110 100 90 80 70 60 50 40 30 20 10 0 0 VGS = 4.2 V TJ = 25°C 4.0 V 5.0 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TYPICAL CHARACTERISTICS 3.8 V 4.5 V 3.6 V 3.4 V 3.2 V 3.0 V 2.8 V 2.6 V 1 2 3 4 5 6 120 110 100 90 80 70 VDS ≥ 10 V 60 50 40 30 20 10 0 TJ = 125°C TJ = 25°C TJ = −55°C 0 1 2 3 4 5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics http://onsemi.com 3 6 NTMFS4826NE RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) TYPICAL CHARACTERISTICS 0.020 0.018 ID = 30 A TJ = 25°C 0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0 2 3 4 6 5 7 8 9 11 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.010 0.009 0.008 VGS = 4.5 V 0.007 0.006 0.005 VGS = 11.5 V 0.004 0.003 0.002 0.001 0 15 20 30 35 45 40 50 55 60 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10,000 1.70 VGS = 0 V ID = 30 A VGS = 10 V 1.55 IDSS, LEAKAGE (nA) 1.40 TJ = 150°C 1000 1.25 1.10 0.95 0.80 TJ = 125°C 100 0.65 0.50 −50 −25 0 25 50 75 100 125 10 150 2 4 TJ, JUNCTION TEMPERATURE (°C) 12 11 10 VGS, GATE−TO−SOURCE VOLTAGE (V) Ciss 1750 1500 1250 TJ = 25°C 1000 Coss 750 500 Crss 250 0 0 5 10 15 20 10 12 14 16 20 18 25 16 QT 14 VDS VGS 9 8 12 10 7 6 8 5 4 6 Qgd Qgs 3 ID = 30 A TJ = 25°C 2 1 0 0 5 10 15 20 25 30 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge http://onsemi.com 4 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 2250 8 Figure 6. Drain−to−Source Leakage Current vs. Voltage 2500 2000 6 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature C, CAPACITANCE (pF) 25 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = 25°C 4 2 0 NTMFS4826NE TYPICAL CHARACTERISTICS 1000 IS, SOURCE CURRENT (A) VDS = 15 V ID = 15 A VGS = 11.5 V t, TIME (ns) 100 td(off) tr 10 td(on) tf 1 ID, DRAIN CURRENT (A) 1000 10 100 0.5 0.6 0.7 0.8 0.9 Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 10 ms 100 ms 10 1 ms 10 ms dc 1 0.1 0.4 VSD, SOURCE−TO−DRAIN VOLTAGE (V) VGS = 20 V Single Pulse TC = 25°C 100 VGS = 0 V TJ = 25°C RG, GATE RESISTANCE (W) EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) 1 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 100 110 100 ID = 27 A 90 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE(°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature 120 100 100 125°C 100°C 25°C Id (A) gFS (S) 80 60 10 40 20 0 VDS = 1.5 V 0 10 20 30 40 50 60 70 80 1 90 100 110 120 0.1 1 10 100 1000 DRAIN CURRENT (A) PULSE WIDTH (ms) Figure 13. gFS vs. Drain Current Figure 14. Avalanche Characteristics http://onsemi.com 5 10,000 NTMFS4826NE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA−01 ISSUE D 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D 2 A B D1 6 2X 0.20 C 5 4X E1 1 2 3 q E 2 c A1 4 TOP VIEW C 3X e 0.10 C SEATING PLANE DETAIL A A 0.10 C SIDE VIEW 8X DETAIL A b 0.10 C A B 0.05 c e/2 L 1 MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 −−− 4.22 6.15 BSC 5.50 5.80 6.10 3.45 −−− 4.30 1.27 BSC 0.51 0.61 0.71 0.51 −−− −−− 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ −−− 12 _ SOLDERING FOOTPRINT* 3X STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 4X 1.270 0.750 4X 1.000 0.965 4 K 1.330 2X 0.905 2X E2 L1 6 G DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q 0.495 M 4.530 3.200 0.475 5 D2 2X 1.530 BOTTOM VIEW 4.560 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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