NTMFS4839NH

NTMFS4839NH Power MOSFET Features 30 V, 64 A, Single N−Channel, SO−8FL • • • • • Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices* http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 5.5 mW @ 10 V 10.3 mW @ 4.5 V 64 A ID MAX Applications • Refer to Application Note AND8195/D • CPU Power Delivery • DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA − tv10 sec Power Dissipation RqJA tv10 sec Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current Steady State Symbol VDSS VGS ID PD ID PD ID PD ID PD IDM TJ, TSTG IS dV/dt EAS Value 30 ±20 15 11 2.17 1.13 24 17 5.7 2.9 9.5 7.0 0.87 0.45 64 46 42.4 22 192 −55 to +150 35 6 109 Unit V V A D (5,6) TA = 25°C TA = 85°C TA = 25°C TA = 85°C TA = 25°C TA = 85°C TA = 25°C TA = 85°C TA = 25°C TA = 85°C TA = 25°C TA = 85°C TC = 25°C TC = 85°C TC = 25°C TC = 25°C TA = 25°C, tp = 10 ms G (4) S (1,2,3) N−CHANNEL MOSFET W A W A 1 MARKING DIAGRAM D S S S G 4839NH AYWWG G D D W A SO−8 FLAT LEAD CASE 488AA STYLE 1 D W A °C A V/ns mJ Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V, IL = 27 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NTMFS4839NHT1G NTMFS4839NHT3G Package SO−8FL (Pb−Free) SO−8FL (Pb−Free) Shipping† 1500 / Tape & Reel 5000 / Tape & Reel TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2010 May, 2010 − Rev. 4 1 Publication Order Number: NTMFS4839NH/D NTMFS4839NH THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – Steady State (Note 4) Junction−to−Ambient (tv10 sec) 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size. Symbol RqJC RqJA RqJA RqJA Value 2.95 57.6 143.3 22 °C/W Unit ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/ TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) VGS = 10 V to 11.5 V VGS = 4.5 V Forward Transconductance gFS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) VGS = 11.5 V, VDS = 15 V; ID = 30 A VGS = 4.5 V, VDS = 15 V; ID = 30 A VGS = 0 V, f = 1 MHz, VDS = 12 V ID = 30 A ID = 15 A ID = 30 A ID = 15 A VDS = 1.5 V, ID = 50 A CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Total Gate Charge SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 13.4 22.5 16 5.3 20 33.7 24 7.9 ns 1744 355 191 12.9 2.2 5.2 5.4 31 2354 479 296 19.5 3.3 7.8 8.0 43.5 nC nC pF VGS = 0 V, VDS = 24 V TJ = 25 °C TJ = 125°C VGS = 0 V, ID = 250 mA 30 27.5 1 10 ±100 V mV/°C mA nA Symbol Test Condition Min Typ Max Unit Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VDS = 0 V, VGS = ±20 V VGS = VDS, ID = 250 mA 1.5 2.1 5.5 4.3 4.3 8.2 7.8 60 2.5 V mV/°C 5.5 mW 10.3 S 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTMFS4839NH ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD tRR ta tb QRR LS LD LG RG TA = 25°C VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A VGS = 0 V, IS = 30 A TJ = 25°C TJ = 125°C 0.83 0.73 19.3 10.1 9.2 6.3 nC ns 1.2 V td(ON) tr td(OFF) tf VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 8.1 19.6 23.2 3.4 12.2 29.4 34.9 5.1 ns Symbol Test Condition Min Typ Max Unit Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance Gate Inductance Gate Resistance 0.93 0.005 1.84 0.9 nH nH nH W 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 NTMFS4839NH 90 85 80 75 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 4.6 V 4.8 V 5.0 V 7.0 V 10 V 4.4 V 4.2 V 4.0 V 3.8 V 3.6 V 3.4 V VGS = 3.2 V 0 1 2 3 4 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 5 TJ = 25°C ID, DRAIN CURRENT (A) 80 70 60 50 40 30 20 10 0 1 TC = 125°C TC = 25°C ID, DRAIN CURRENT (A) TC = −55°C 7 Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 2 3 4 5 6 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.02 0.019 0.018 0.017 0.016 0.015 0.014 0.013 0.012 0.011 0.01 0.009 0.008 0.007 0.006 0.005 0.004 0.003 0.002 3.0 ID = 30 A TJ = 25°C 4.0 5.0 6.0 7.0 8.0 9.0 10 11 0.012 0.0115 0.011 0.0105 0.01 0.0095 0.009 0.0085 0.008 0.0075 0.007 0.0065 0.006 0.0055 0.005 0.0045 0.004 0.0035 0.003 0.0025 0.002 0.0015 0.001 VGS = 4.5 V VGS = 11.5 V 10 15 20 25 30 35 40 45 50 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance versus Gate−to−Source Voltage Figure 4. On−Resistance versus Drain Current and Gate Voltage RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 −55 −35 −15 ID = 30 A VGS = 10 V IDSS, LEAKAGE (nA) 10000 1000 100 10 1 0.1 VGS = 0 V TJ = 150°C TJ = 125°C TJ = 25°C 5 25 45 65 85 105 125 145 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 4 NTMFS4839NH 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 15 12 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C CISS 10.5 9 7.5 6 4.5 3 1.5 0 0 2 4 6 8 QGS QGD VDD = 15 V VGS = 0 V − 11.5 V ID = 30 A TJ = 25°C 10 12 14 16 18 20 22 24 26 28 Qg, TOTAL GATE CHARGE (nC) QT C, CAPACITANCE (pF) COSS CRSS 10 5 VGS 0 VDS 5 10 15 20 25 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Gate Charge 100 VDS = 15 V ID = 15 A VGS = 11.5 V t, TIME (ns) tr 10 td(on) tf 30 25 20 15 10 5 0 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (V) 1.0 VGS = 0 V TJ = 25°C td(off) 1 1 10 RG, GATE RESISTANCE (W) 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance IS, SOURCE CURRENT (A) Figure 10. Diode Forward Voltage versus Current ID, DRAIN CURRENT (A) VGS = 20 V Single Pulse TC = 25°C 10 ms EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) 1000 110 100 90 80 70 60 50 40 30 20 10 0 25 50 75 100 125 ID = 27 A 100 100 ms 10 1 ms RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 10 ms dc 100 1 150 175 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 5 NTMFS4839NH 80 70 60 50 gFS, (S) 40 30 20 10 0 0 20 40 60 VDS = 1.5 V 80 100 DRAIN CURRENT (A) Figure 13. GFS versus Drain Current http://onsemi.com 6 NTMFS4839NH PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA−01 ISSUE D 0.20 C D 2 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 2X A B 5 2X D1 0.20 C E1 2 E c 4X q A1 1 2 3 4 TOP VIEW 3X C SEATING PLANE 0.10 C A 0.10 C SIDE VIEW 8X e DETAIL A DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 −−− 4.22 6.15 BSC 5.50 5.80 6.10 3.45 −−− 4.30 1.27 BSC 0.51 0.61 0.71 0.51 −−− −−− 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ −−− 12 _ DETAIL A SOLDERING FOOTPRINT* 1.270 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 3X b e/2 1 4 0.750 4X 0.10 0.05 CAB c L 1.000 4X 0.965 1.330 0.495 3.200 0.475 2X 2X K E2 L1 6 5 0.905 4.530 2X M G D2 BOTTOM VIEW 1.530 4.560 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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