NTMFS4923NET3G

NTMFS4923NE Power MOSFET 30 V, 91 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability These Devices are Pb−Free, Halogen Free and are RoHS Compliant Applications http://onsemi.com V(BR)DSS 30 V • CPU Power Delivery, DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Unit VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 21.4 A TA = 25°C TA = 100°C TA = 25°C PD 2.63 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 38.8 A Continuous Drain Current RqJA (Note 2) TA = 100°C 4.8 mW @ 4.5 V 75 A G (4) S (1,2,3) TA = 25°C Steady State 24.5 PD 8.7 D TA = 25°C ID TA = 100°C 12.7 A 8.0 PD 0.93 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 91 A Power Dissipation RqJC (Note 1) TC = 25°C PD 48 W TA = 25°C, tp = 10 ms IDM 275 A TC = 85°C Current Limited by Package MARKING DIAGRAM W TA = 25°C TA = 25°C Operating Junction and Storage Temperature Source Current (Body Diode) 66 SO−8 FLAT LEAD CASE 488AA STYLE 1 A Y W ZZ S S S G 4923NE AYWZZ D D D = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION 100 A TJ, TSTG −40 to +150 °C Device Package Shipping† IS 44 A NTMFS4923NET1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NTMFS4923NET3G SO−8 FL (Pb−Free) 5000 / Tape & Reel dV/dt 6 V/ns Single Pulse Drain−to−Source Avalanche Energy TJ = 25°C, VDD = 24 V, VGS = 10 V, IL = 47 Apk, L = 0.1 mH, RG = 25 W EAS 110 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2012 1 IDmax Drain to Source DV/DT May, 2012 − Rev. 1 91 A N−CHANNEL MOSFET Power Dissipation RqJA (Note 2) Pulsed Drain Current 3.3 mW @ 10 V 13.5 Power Dissipation RqJA (Note 1) Power Dissipation RqJA ≤ 10 s (Note 1) ID MAX D (5,6) Value Drain−to−Source Voltage Continuous Drain Current RqJA (Note 1) RDS(ON) MAX 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTMFS4923NE/D NTMFS4923NE THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case (Drain) Parameter RqJC 2.6 Junction−to−Ambient – Steady State (Note 3) RqJA 47.5 Junction−to−Ambient – Steady State (Note 4) RqJA 134.8 Junction−to−Ambient – (t ≤ 10 s) (Note 3) RqJA 14.4 Junction−to−Top RqJT 8.3 Unit °C/W 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 15 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.0 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) 1.63 4.0 VGS = 10 V VGS = 4.5 V Forward Transconductance 1.2 gFS ID = 30 A 2.7 ID = 15 A 2.7 ID = 30 A 3.7 ID = 15 A 3.7 VDS = 1.5 V, ID = 15 A mV/°C 3.3 4.8 32 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) 22 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge VGS = 0 V, f = 1 MHz, VDS = 15 V VGS = 4.5 V, VDS = 15 V; ID = 30 A 3579 4850 1264 1710 39 59 5.6 10.2 pF nC 3.0 QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 49.4 nC SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 16.3 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 20 27.5 6.6 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns NTMFS4923NE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 11.2 tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 18.7 ns 28.3 12.1 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.85 TJ = 125°C 0.72 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 30 A 1.1 V 44.4 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 21.6 ns 22.8 QRR 45 nC Source Inductance LS 0.65 nH Drain Inductance LD 0.005 nH Gate Inductance LG 1.84 nH Gate Resistance RG PACKAGE PARASITIC VALUES TA = 25°C 1.1 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 2.0 W NTMFS4923NE TYPICAL CHARACTERISTICS 7V 140 160 100 3.4 V 80 3.2 V 60 3.0 V 40 2.8 V 20 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 140 3.8 V 3.6 V 4.5 120 TJ = 25°C VGS = 4.0 V 0 1 2 3 120 100 80 40 0 4 TJ = 125°C TJ = −55°C 1.0 1.5 2.5 2.0 3.0 3.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = 30 A TJ = 25°C 0.008 0.007 0.006 0.005 0.004 3.0 4.0 5.0 6.0 7.0 8.0 9.0 VGS (V) 10 0.0050 0.0048 0.0046 0.0044 0.0042 0.0040 0.0038 0.0036 0.0034 0.0032 0.0030 0.0028 0.0026 0.0024 0.0022 0.0020 TJ = 25°C VGS = 4.5 V VGS = 10 V 20 40 60 80 100 120 140 160 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10,000 VGS = 0 V TJ = 150°C IDSS, LEAKAGE (nA) 1.9 1.8 ID = 30 A 1.7 VGS = 10 V 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 −50 −25 0 4.0 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = 25°C 60 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.014 0.013 0.012 0.011 0.010 0.009 0.003 0.002 2.0 VDS = 10 V 20 2.4 V 2.6 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 4.2 V 10 V 160 ID, DRAIN CURRENT (A) 180 1000 25 50 75 100 125 150 TJ = 125°C TJ = 85°C 100 10 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 30 NTMFS4923NE 4500 C, CAPACITANCE (pF) 4000 VGS = 0 V TJ = 25°C Ciss 3500 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 3000 2500 2000 Coss 1500 1000 500 0 Crss 0 5 10 15 20 25 30 8 7 6 5 Qgd 4 Qgs 3 TJ = 25°C VDD = 15 V VGS = 10 V ID = 30 A 2 1 0 0 5 15 10 20 25 30 35 40 50 45 Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 30 IS, SOURCE CURRENT (A) td(off) tf 100 t, TIME (ns) 9 Qg, TOTAL GATE CHARGE (nC) VDD = 15 V ID = 15 A VGS = 10 V tr td(on) 10 1 10 TJ = 125°C 15 10 TJ = 25°C 5 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 10 ms 100 ms 1 ms 10 ms 0 ≤ VGS ≤ 20 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 0.1 dc 1 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) 0.01 0.01 20 VSD, SOURCE−TO−DRAIN VOLTAGE (V) 10 0.1 VGS = 0 V RG, GATE RESISTANCE (W) 100 1 25 0 100 1000 ID, DRAIN CURRENT (A) QT VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1 11 10 100 130 120 110 100 90 80 70 60 50 40 30 20 10 0 ID = 29 A 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 150 NTMFS4923NE TYPICAL CHARACTERISTICS 1000 Duty Cycle = 50% 10 20% 10% 5% 2% 1 1% 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 PULSE TIME (sec) Figure 13. Thermal Response 70 60 50 GFS (S) R(t) (°C/W) 100 40 30 20 10 0 0 10 20 30 40 50 60 70 ID (A) Figure 14. GFS vs. ID http://onsemi.com 6 80 90 100 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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