NTMFS4925NET1G

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Other names and brands may be claimed as the property of others. NTMFS4925NE Power MOSFET 30 V, 48 A, Single N−Channel, SO−8 FL Features • • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability Optimized for 5 V, 12 V Gate Drives These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications http://onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 6.0 mW @ 10 V 30 V 48 A 10 mW @ 4.5 V • CPU Power Delivery • DC−DC Converters D (5,6) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA ≤ 10 s (Note 1) Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Value Unit VDSS VGS ID 30 ±20 16.7 V V A TA = 100°C Steady State S (1,2,3) TA = 25°C PD 2.70 W TA = 25°C ID 25.2 A TA = 25°C 6.16 TA = 25°C PD 0.92 W TC = 25°C ID 48 A TC = 25°C PD 23.2 W TA = 25°C, tp = 10 ms IDM 195 A IDmax TJ, TSTG 100 −55 to +150 A °C IS dV/dt EAS 21 6.0 34 A V/ns mJ TL 260 °C TA = 100°C TA = 25°C Source Current (Body Diode) Drain to Source DV/DT Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V, IL = 26 Apk, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) A 6.2 TC =100°C Current Limited by Package Operating Junction and Storage Temperature 30 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2011 September, 2011 − Rev. 0 MARKING DIAGRAM D W 9.7 Power Dissipation RqJC (Note 1) N−CHANNEL MOSFET 15.9 PD ID TA = 25°C G (4) 10.5 TA = 100°C Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Pulsed Drain Current TA = 25°C Symbol 1 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 S S S G 4925NE AYWWG G D D D A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NTMFS4925NET1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NTMFS4925NET3G SO−8 FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTMFS4925NE/D NTMFS4925NE THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case (Drain) Parameter RqJC 5.4 Junction−to−Ambient – Steady State (Note 3) RqJA 46.3 Junction−to−Ambient – Steady State (Note 4) RqJA 136.2 Junction−to−Ambient – (t ≤ 10 s) (Note 3) RqJA 20.3 Junction−to−Top RqJT 10.2 Unit °C/W 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 21 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.2 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) 1.7 3.9 VGS = 10 V VGS = 4.5 V Forward Transconductance 1.2 gFS ID = 30 A 4.0 ID = 15 A 4.0 ID = 30 A 6.4 ID = 15 A 6.3 VDS = 1.5 V, ID = 15 A 52 mV/°C 6.0 10 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 143 Total Gate Charge QG(TOT) 10.8 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge 1264 VGS = 0 V, f = 1 MHz, VDS = 15 V VGS = 4.5 V, VDS = 15 V; ID = 30 A 483 2.0 3.8 pF nC 4.2 QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 21.5 nC SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 9.5 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 32.7 16.4 6.2 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns NTMFS4925NE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 7.4 tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 27.5 ns 20.3 4.1 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.86 TJ = 125°C 0.75 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 30 A 1.1 V 25.8 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 12.4 ns 13.4 QRR 13.6 nC Source Inductance LS 1.00 nH Drain Inductance LD 0.005 nH Gate Inductance LG 1.84 nH Gate Resistance RG PACKAGE PARASITIC VALUES TA = 25°C 0.8 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 2.2 W NTMFS4925NE TYPICAL CHARACTERISTICS 4.5 V TJ = 25°C 4.0 V 80 ID, DRAIN CURRENT (A) 100 90 3.5 V 70 60 50 40 3.0 V 30 20 10 0 VGS = 2.5 V 0 1 2 3 4 5 0.014 0.012 0.010 0.008 0.006 0.004 4 5 6 7 8 9 10 50 40 30 20 1 2 3 4 5 0.011 T = 25°C 0.010 0.009 0.008 VGS = 4.5 V 0.007 0.006 0.005 VGS = 10 V 0.004 0.003 10 20 30 40 50 60 70 80 90 100 110 120 VGS (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10,000 1.7 ID = 30 A VGS = 10 V TJ = 150°C IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) VDS = 10 V 70 60 Figure 2. Transfer Characteristics 0.016 1.5 TJ = 125°C Figure 1. On−Region Characteristics ID = 30 A 1.6 TJ = 25°C 90 80 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.018 3 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.020 0.002 0 120 110 100 10 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 120 10 V 110 1.4 1.3 1.2 1.1 1.0 0.9 1,000 TJ = 125°C 100 TJ = 85°C 0.8 0.7 0.6 −50 −25 0 25 50 75 100 125 150 10 VGS = 0 V 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 30 NTMFS4925NE TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) TJ = 25°C VGS = 0 V Ciss 1400 VGS, GATE−TO−SOURCE VOLTAGE (V) 1600 1200 1000 800 Coss 600 400 Crss 200 0 0 5 10 15 20 25 30 11 QT 10 9 8 7 6 5 Qgs 4 Qgd TJ = 25°C 3 VGS = 10 V VDD = 15 V ID = 30 A 2 1 0 0 2 4 6 8 10 12 14 18 16 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1000 22 20 30 t, TIME (ns) 100 IS, SOURCE CURRENT (A) VGS = 0 V VGS = 10 V VDD = 15 V ID = 15 A td(off) tf tr 10 ID, DRAIN CURRENT (A) 1000 100 1 10 10 TJ = 125°C TJ = 25°C 5 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 10. Diode Forward Voltage vs. Current 0 V < VGS < 10 V Single Pulse TC = 25°C 10 100 ms 1 ms 1 0.01 15 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 10 ms 0.1 20 0 100 10 ms RDS(on) Limit Thermal Limit Package Limit 0.01 0.1 dc 1 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) 1 td(on) 25 100 40 ID = 26 A 36 32 28 24 20 16 12 8 4 0 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 150 NTMFS4925NE TYPICAL CHARACTERISTICS 100 D = 0.5 r(t) (°C/W) 10 1 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (ms) Figure 13. Thermal Response http://onsemi.com 6 1 10 100 1000 NTMFS4925NE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO8 FL) CASE 488AA−01 ISSUE E 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D 2 A B D1 2X 0.20 C 4X E1 2 1 2 3 q E c A1 4 TOP VIEW C 3X e 0.10 C SEATING PLANE DETAIL A A 0.10 C SIDE VIEW 8X C A B 0.05 c 3X 4X 1.270 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN e/2 L 1 4 K MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 −−− 4.22 6.15 BSC 5.50 5.80 6.10 3.45 −−− 4.30 1.27 BSC 0.51 0.61 0.71 0.51 −−− −−− 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ −−− 12 _ SOLDERING FOOTPRINT* DETAIL A b 0.10 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q 0.750 4X 1.000 0.965 1.330 2X 0.905 2X PIN 5 (EXPOSED PAD) G E2 L1 0.495 M 4.530 3.200 D2 0.475 2X 1.530 BOTTOM VIEW 4.560 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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