NTMFS4926NE
Power MOSFET
30 V, 44 A, Single N−Channel, SO−8 FL
Features
•
•
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Dual Sided Cooling Capability
Optimized for 5 V, 12 V Gate Drives
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
http://onsemi.com
V(BR)DSS
RDS(ON) MAX
ID MAX
7.0 mW @ 10 V
30 V
44 A
12.0 mW @ 4.5 V
• CPU Power Delivery
• DC−DC Converters
D (5,6)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA
(Note 1)
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
Current RqJA
(Note 2)
Value
Unit
VDSS
VGS
ID
30
±20
15.5
V
V
A
TA = 100°C
Steady
State
S (1,2,3)
TA = 25°C
PD
2.70
W
TA = 25°C
ID
23.4
A
TA = 25°C
6.13
TA = 25°C
PD
0.92
W
TC = 25°C
ID
44
A
TC = 25°C
PD
21.6
W
TA = 25°C, tp = 10 ms
IDM
182
A
IDmax
TJ,
TSTG
100
−55 to
+150
A
°C
IS
dV/dt
EAS
21
6.0
22
A
V/ns
mJ
TL
260
°C
TA = 100°C
TA = 25°C
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL = 21 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
A
5.7
TC =100°C
Current Limited by Package
Operating Junction and Storage
Temperature
28
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 1
MARKING
DIAGRAM
D
W
9.0
Power Dissipation
RqJC (Note 1)
N−CHANNEL MOSFET
14.8
PD
ID
TA = 25°C
G (4)
9.8
TA = 100°C
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
Pulsed Drain
Current
TA = 25°C
Symbol
1
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
4926NE
AYWZZ
D
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS4926NET1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4926NET3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTMFS4926NE/D
NTMFS4926NE
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
5.8
Junction−to−Ambient – Steady State (Note 3)
RqJA
46.3
Junction−to−Ambient – Steady State (Note 4)
RqJA
136.2
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
RqJA
20.4
Junction−to−Top
RqJT
10.5
Unit
°C/W
°C/W
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
25
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.2
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
1.6
3.8
VGS = 10 V
VGS = 4.5 V
Forward Transconductance
1.2
gFS
ID = 30 A
4.8
ID = 15 A
4.8
ID = 30 A
7.8
ID = 15 A
7.5
VDS = 1.5 V, ID = 15 A
40
mV/°C
7.0
12
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
119
Total Gate Charge
QG(TOT)
8.7
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
1004
VGS = 0 V, f = 1 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
390
1.4
3.0
pF
nC
3.5
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
17.3
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
8.6
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
36.9
14.7
5.5
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
ns
NTMFS4926NE
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
6.6
tr
td(OFF)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
31.8
ns
18.3
4.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.87
TJ = 125°C
0.76
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 30 A
1.1
V
21.9
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
11.0
ns
10.9
QRR
8.0
nC
Source Inductance
LS
1.00
nH
Drain Inductance
LD
0.005
nH
Gate Inductance
LG
1.84
nH
Gate Resistance
RG
PACKAGE PARASITIC VALUES
TA = 25°C
1.0
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
3
2.2
W
NTMFS4926NE
TYPICAL CHARACTERISTICS
100
10 V
90
4.0 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
70
3.6 V
60
50
3.2 V
40
30
VGS = 2.8 V
20
0
1
2
3
4
30
20
1
2
3
4
5
0.006
4
5
6
7
8
9
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.009
0.008
0.007
0.016
0.015
0.014
0.013
T = 25°C
0.012
0.011
0.010
VGS = 4.5 V
0.009
0.008
0.007
0.006
0.005
0.004
VGS = 10 V
10
20
30
50
40
60
70
80
90
100
VGS (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
1.7
ID = 30 A
VGS = 10 V
TJ = 150°C
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
50
40
Figure 1. On−Region Characteristics
0.010
1.5
TJ = 125°C
VDS = 10 V
60
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID = 30 A
1.6
TJ = 25°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.013
0.012
0.011
3
80
70
10
0
5
0.015
0.014
0.005
0.004
0.003
TJ = −55°C
90
80
10
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
100
TJ = 25°C
4.5 V
1.4
1.3
1.2
1.1
1.0
0.9
1,000
TJ = 125°C
100
TJ = 85°C
0.8
0.7
0.6
−50
−25
0
25
50
75
100
125
150
10
VGS = 0 V
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
4
30
NTMFS4926NE
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
1200
VGS, GATE−TO−SOURCE VOLTAGE (V)
1400
TJ = 25°C
VGS = 0 V
Ciss
1000
800
600
Coss
400
Crss
200
0
0
5
10
15
20
25
30
5
Qgs
4
Qgd
TJ = 25°C
3
VGS = 10 V
VDD = 15 V
ID = 30 A
2
1
0
0
2
4
6
8
10
12
14
18
16
30
IS, SOURCE CURRENT (A)
VGS = 0 V
td(off)
tf
tr
td(on)
1
10
25
20
15
10
TJ = 25°C
TJ = 125°C
5
0
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10 ms
10
100 ms
1
1 ms
10 ms
0 V < VGS < 10 V
Single Pulse
TC = 25°C
dc
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.1
1
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
t, TIME (ns)
6
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
ID, DRAIN CURRENT (A)
8
7
Figure 7. Capacitance Variation
100
0.01
9
Qg, TOTAL GATE CHARGE (nC)
VGS = 10 V
VDD = 15 V
ID = 15 A
0.1
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
1
11
10
100
22
ID = 21 A
20
18
16
14
12
10
8
6
4
2
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
150
NTMFS4926NE
TYPICAL CHARACTERISTICS
100
D = 0.5
r(t)
(°C/W)
10
1
0.2
0.1
0.05
0.02
0.01
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (ms)
Figure 13. Thermal Response
http://onsemi.com
6
1
10
100
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
DATE 25 JUN 2018
SCALE 2:1
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
A1
4
TOP VIEW
C
DETAIL A
0.10 C
SEATING
PLANE
A
0.10 C
SIDE VIEW
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
GENERIC
MARKING DIAGRAM*
DETAIL A
1
0.10
b
C A B
0.05
c
8X
XXXXXX
AYWZZ
e/2
e
L
1
4
K
RECOMMENDED
SOLDERING FOOTPRINT*
E2
PIN 5
(EXPOSED PAD)
L1
M
2X
0.495
4.560
2X
1.530
G
D2
2X
BOTTOM VIEW
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
0.475
3.200
4.530
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
1.330
STYLE 2:
2X
PIN 1. ANODE
0.905
2. ANODE
3. ANODE
4. NO CONNECT
0.965
5. CATHODE
1
4X
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative