NTMFS4931NT3G

NTMFS4931N MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 246 A Features • Low RDS(on) to Improve Conduction and Overall Efficiency • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX Applications • OR−ing FET, Power Load Switch, Motor Control • Refer to Application Note AND8195/D for Mounting Information ID MAX 1.1 mW @ 10 V 30 V 246 A 1.5 mW @ 4.5 V D (5,6) End Products • Motor Control, UPS, Fault−Tolerant Power Systems, Hot Swap MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V S (1,2,3) ID 40 A N−CHANNEL MOSFET Continuous Drain Current RqJA (Note 1) TA = 25°C TA = 100°C 25 Power Dissipation RqJA (Note 1) TA = 25°C PD 2.74 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 77 A Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) TA = 100°C TA = 25°C Steady State TA = 25°C 48 PD ID TA = 100°C 10.2 W A 23 15 Power Dissipation RqJA (Note 2) TA = 25°C PD 0.95 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 246 A TC =100°C Power Dissipation RqJC (Note 1) Pulsed Drain Current May, 2019 − Rev. 2 SO−8 FLAT LEAD CASE 488AA STYLE 1 A Y W ZZ D 4931N AYWZZ D D = Assembly Location = Year = Work Week = Lot Traceability Shipping† NTMFS4931NT1G SO−8 FL (Pb−Free) 1500 / Tape & Reel °C NTMFS4931NT3G SO−8 FL (Pb−Free) 5000 / Tape & Reel 100 A 4.4 V/ns †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. W TA = 25°C, tp = 10 ms IDM 490 A TJ, TSTG −55 to +150 IS dV/dt © Semiconductor Components Industries, LLC, 2014 1 Package 104 Drain to Source DV/DT D S S S G Device PD Source Current (Body Diode) MARKING DIAGRAM ORDERING INFORMATION 156 TC = 25°C Operating Junction and Storage Temperature G (4) 1 Publication Order Number: NTMFS4931N/D NTMFS4931N MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V, IL = 41 Apk, L = 0.3 mH, RG = 25 W) EAS 252 mJ TL 260 °C Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. www.onsemi.com 2 NTMFS4931N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case (Drain) Parameter RqJC 1.2 Junction−to−Ambient – Steady State (Note 3) RqJA 45.7 Junction−to−Ambient – Steady State (Note 4) RqJA 132 Junction−to−Ambient – (t ≤ 10 s) (Note 3) RqJA 12.3 Unit °C/W 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 18 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 15 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.2 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) 1.6 4.0 VGS = 10 V VGS = 4.5 V Forward Transconductance 1.2 gFS ID = 30 A 0.85 ID = 15 A 0.82 ID = 30 A 1.2 ID = 15 A 1.2 VDS = 1.5 V, ID = 15 A 86 mV/°C 1.1 1.5 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 234 Total Gate Charge QG(TOT) 61.5 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge 9821 VGS = 0 V, f = 1 MHz, VDS = 15 V VGS = 4.5 V, VDS = 15 V; ID = 30 A 2720 14.2 25.2 pF nC 15.9 QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 128 nC SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 27 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 29 36 24 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 ns NTMFS4931N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 15 tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 17 ns 80 22 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.8 TJ = 125°C 0.62 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 30 A 1.0 V 64 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 33 ns 31 QRR 100 nC Source Inductance LS 0.50 nH Drain Inductance LD 0.005 nH Gate Inductance LG 1.84 nH Gate Resistance RG PACKAGE PARASITIC VALUES TA = 25°C 0.7 1.8 W 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 NTMFS4931N TYPICAL CHARACTERISTICS 220 220 VGS = 3.4 V ID, DRAIN CURRENT (A) 180 160 VGS = 3 V 140 VGS = 3.8 V to 10 V 120 100 VGS = 2.8 V 80 60 40 20 0 VGS = 2.6 V VGS = 2.2 V 0 VDS = 10 V 200 VGS = 3.2 V 180 ID, DRAIN CURRENT (A) 200 160 140 120 80 TJ = 25°C 60 40 20 VGS = 2.4 V 1 2 3 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ = 125°C 100 0 4 TJ = −55°C 1 1.5 2 2.5 3 3.5 VGS, GATE−TO−SOURCE VOLTAGE (V) 12 11 10 9 8 7 6 5 4 3 2 1 0 2.0 Figure 2. Transfer Characteristics ID = 30 A TJ = 25°C 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 VGS, GATE−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics 0.0018 0.0017 TJ = 25°C VGS = 4.5 V 0.0016 0.0015 0.0014 0.0013 0.0012 0.0011 0.001 VGS = 10 V 0.0009 0.0008 0.0007 0.0006 0.0005 30 40 50 60 70 80 90 100 110 120 130 140 150 160 ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.6 1.4 100000 VGS = 0 V ID = 30 A VGS = 10 V TJ = 150°C 10000 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) Figure 3. On−Resistance vs. Gate−to−Source Voltage 1.5 4 1.3 1.2 1.1 1 0.9 0.8 TJ = 125°C 1000 TJ = 85°C 100 0.7 0.6 −50 −25 0 25 50 75 100 125 150 10 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 5 30 NTMFS4931N TJ = 25°C VGS = 0 V Ciss C, CAPACITANCE (pF) 13000 12000 11000 10000 9000 8000 7000 6000 5000 4000 3000 2000 1000 0 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS Coss Crss 0 5 10 15 20 25 30 10 8 7 6 5 4 QGD QGS 3 2 VDD = 15 V VGS = 10 V ID = 30 A 1 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge 10000 30 VDD = 15 V ID = 15 A VGS = 10 V VGS = 0 V ID, DRAIN CURRENT (A) t, TIME (ns) 1000 td(off) tf tr 100 td(on) 10 1 1 10 100 25 20 TJ = 125°C 15 TJ = 25°C 10 5 0 0.3 100 ms 10 1 ms 10 ms 0 V < VGS < 10 V SINGLE PULSE TC = 25°C DC RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0.1 1 10 100 EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (A) 100 0.01 0.5 0.6 0.7 0.8 0.9 1.0 Figure 10. Diode Forward Voltage vs. Current 1000 0.1 0.4 VSD, SOURCE−TO−DRAIN VOLTAGE (V) RG, GATE RESISTANCE (W) Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1 QT TJ = 25°C 9 260 240 220 200 180 160 140 120 100 80 60 40 20 0 ID = 41 A 25 50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature www.onsemi.com 6 150 NTMFS4931N TYPICAL CHARACTERISTICS 100 D = 0.5 0.2 10 0.1 1 0.01 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, TIME (s) Figure 13. Thermal Response GFS (S) r(t) (°C/W) 0.05 0.02 260.00 240.00 220.00 200.00 180.00 160.00 140.00 120.00 100.00 80.00 60.00 40.00 20.00 0.00 0 10 20 30 40 50 ID (A) 60 70 Figure 14. GFS vs. ID www.onsemi.com 7 80 90 100 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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