NTMFS4933N
MOSFET – Power, Single,
N-Channel, SO-8 FL
30 V, 210 A
Features
• Low RDS(on) to Improve Conduction and Overall Efficiency
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
V(BR)DSS
Applications
• OR−ing FET, Power Load Switch, Motor Control
• Refer to Application Note AND8195/D for Mounting Information
RDS(ON) MAX
ID MAX
1.2 mW @ 10 V
30 V
210 A
2.0 mW @ 4.5 V
End Products
• Server, UPS, Fault−Tolerant Power Systems, Hot Swap
D (5,6)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
34
A
Continuous Drain
Current RqJA (Note 1)
TA = 25°C
TA = 100°C
N−CHANNEL MOSFET
TA = 25°C
PD
2.74
W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
ID
43
A
Continuous Drain
Current RqJA (Note 2)
TA = 100°C
Steady
State
MARKING
DIAGRAM
D
27
TA = 25°C
PD
7.3
W
TA = 25°C
ID
20
A
TA = 100°C
12.5
Power Dissipation
RqJA (Note 2)
TA = 25°C
PD
1.06
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
210
A
TC =100°C
Power Dissipation
RqJC (Note 1)
S (1,2,3)
21.5
Power Dissipation
RqJA (Note 1)
Power Dissipation
RqJA ≤ 10 s (Note 1)
G (4)
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
D
4933N
AYWZZ
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceability
132
TC = 25°C
PD
104
W
TA = 25°C, tp = 10 ms
IDM
400
A
Device
Package
Shipping†
TJ,
TSTG
−55 to
+150
°C
NTMFS4933NT1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
IS
95
A
NTMFS4933NT3G
Drain to Source DV/DT
dV/dt
4.4
V/ns
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL = 58 Apk, L = 0.3 mH, RG = 25 W)
EAS
504
mJ
TL
260
°C
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
© Semiconductor Components Industries, LLC, 2012
May, 2019 − Rev. 9
1
Publication Order Number:
NTMFS4933N/D
NTMFS4933N
2. Surface−mounted on FR4 board using the minimum recommended pad size.
(Cu area = 50 mm2 [1 oz])
www.onsemi.com
2
NTMFS4933N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
1.1
Junction−to−Ambient – Steady State (Note 3)
RqJA
45.6
Junction−to−Ambient – Steady State (Note 4)
RqJA
117.5
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
RqJA
17.13
Unit
°C/W
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size. (Cu area = 50 mm2 [1 oz])
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
15
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.2
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
1.6
4.0
VGS = 10 V
VGS = 4.5 V
Forward Transconductance
1.2
gFS
ID = 30 A
0.9
ID = 15 A
0.9
ID = 30 A
1.5
ID = 15 A
1.5
VDS = 1.5 V, ID = 15 A
82
mV/°C
1.2
2.0
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
92
Total Gate Charge
QG(TOT)
62.1
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
10930
VGS = 0 V, f = 1 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
3230
15.7
27
pF
nC
10.1
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
148
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
31
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
33
47
23
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
3
ns
NTMFS4933N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
20
tr
td(OFF)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
26
ns
88.6
22
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.82
TJ = 125°C
0.68
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 30 A
1.1
V
73.5
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
35.9
ns
37.6
QRR
117
nC
Source Inductance
LS
0.50
nH
Drain Inductance
LD
0.005
nH
Gate Inductance
LG
1.84
nH
Gate Resistance
RG
PACKAGE PARASITIC VALUES
TA = 25°C
1.1
2.2
W
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
4
NTMFS4933N
TYPICAL CHARACTERISTICS
3.8 V to
10 V
200
180
220
TJ = 25°C
3.4 V
VGS = 3.2 V
140
3.0 V
120
100
2.8 V
80
60
2.6 V
40
2.4 V
2.2 V
20
0
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
160
0
1
2
3
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VDS = 10 V
200
180
160
140
120
100
TJ = 125°C
80
60
TJ = 25°C
40
TJ = −55°C
20
0
4
1
0.0027
0.0023
3.5
4
0.0016
VGS = 4.5 V
0.0015
0.0019
0.0014
0.0017
0.0013
0.0015
0.0012
0.0013
0.0011
0.0011
VGS = 10 V
0.0010
0.0009
0.0009
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
0.0008
20
40
60
80
100
120
140
160
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100000
VGS = 0 V
ID = 30 A
VGS = 10 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
3
TJ = 25°C
0.0017
0.0021
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
2.5
0.0018
ID = 30 A
TJ = 25°C
0.0025
0.0007
2
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
1.5
−50
−25
0
25
50
75
100
125
150
10000
TJ = 150°C
TJ = 125°C
1000
TJ = 85°C
100
10
5
TJ, JUNCTION TEMPERATURE (°C)
10
15
20
25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
www.onsemi.com
5
30
NTMFS4933N
Ciss
C, CAPACITANCE (pF)
13000
12000
11000
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
TJ = 25°C
VGS = 0 V
Coss
Crss
0
5
10
15
20
25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
30
10
9
7
5
4
VDD = 15 V
VGS = 10 V
ID = 30 A
1
0
0
20
40
60
80
100
120
QG, TOTAL GATE CHARGE (nC)
140
ID, DRAIN CURRENT (A)
VGS = 0 V
td(off)
tf
100
tr
td(on)
10
1
10
15
TJ = 25°C
10
5
0.5
0.6
0.7
0.8
0.9
RG, GATE RESISTANCE (W)
Figure 10. Diode Forward Voltage vs. Current
100 ms
10
1 ms
0 V ≤ VGS ≤ 20 V
SINGLE PULSE
TA = 25°C
TJ = 150°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
TJ = 125°C
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
100
0.1
20
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
1000
1
25
0
0.4
100
10 ms
DC
0.1
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
t, TIME (ns)
QGD
2
30
VDD = 15 V
ID = 15 A
VGS = 10 V
1000
ID, DRAIN CURRENT (A)
QGS
3
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
10000
0.01
QT
6
Figure 7. Capacitance Variation
1
TJ = 25°C
8
520
480
440
400
360
320
280
240
200
160
120
80
40
0
ID = 58 A
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
www.onsemi.com
6
1.0
NTMFS4933N
TYPICAL CHARACTERISTICS
100
D = 0.5
0.2
0.1
10
0.02
0.01
1
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (s)
Figure 13. Thermal Response
GFS (S)
r(t)
(°C/W)
0.05
260
240
220
200
180
160
140
12
100
80
60
40
20
0
0
10
20
30
40
50
ID (A)
60
70
Figure 14. GFS vs. ID
www.onsemi.com
7
80
90
100
100
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
DATE 25 JUN 2018
SCALE 2:1
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
A1
4
TOP VIEW
C
DETAIL A
0.10 C
SEATING
PLANE
A
0.10 C
SIDE VIEW
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
GENERIC
MARKING DIAGRAM*
DETAIL A
1
0.10
b
C A B
0.05
c
8X
XXXXXX
AYWZZ
e/2
e
L
1
4
K
RECOMMENDED
SOLDERING FOOTPRINT*
E2
PIN 5
(EXPOSED PAD)
L1
M
2X
0.495
4.560
2X
1.530
G
D2
2X
BOTTOM VIEW
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
0.475
3.200
4.530
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
1.330
STYLE 2:
2X
PIN 1. ANODE
0.905
2. ANODE
3. ANODE
4. NO CONNECT
0.965
5. CATHODE
1
4X
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative