NTMFS4983NFT3G

NTMFS4983NF Power MOSFET 30 V, 106 A, Single N−Channel, SO−8 FL Features • • • • • Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 2.1 mW @ 10 V 30 V Applications • • • • www.onsemi.com 106 A 3.1 mW @ 4.5 V CPU Power Delivery Synchronous Rectification for DC−DC Converters Low Side Switching Telecom Secondary Side Rectification N−CHANNEL MOSFET D (5, 6) S (1, 2, 3) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 30 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 3.13 W Continuous Drain Current RqJA v 10 sec TA = 25°C ID 48 A Power Dissipation RqJA, t v 10 sec Continuous Drain Current RqJA (Note 2) TA = 85°C 34 TA = 25°C PD 7.7 W TA = 25°C ID 22 A TA = 85°C 16 TA = 25°C PD 1.7 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 106 A Power Dissipation RqJC (Note 1) TC = 25°C PD 38 W TA = 25°C IDM 320 A TA = 25°C IDmaxpkg 100 A TJ, TSTG −55 to +150 °C TC = 85°C tp=10ms Current limited by package Operating Junction and Storage Temperature Source Current (Body Diode) IS 54 A dV/dt 6 V/ns Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, IL = 45 Apk, L = 0.1 mH, RG = 25 W) EAS 101 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2015 August, 2015 − Rev. 4 D SO−8 FLAT LEAD CASE 488AA STYLE 1 A Y W ZZ S S S G D 4983NF AYWZZ D D = Assembly Location = Year = Work Week = Lot Traceability 76 Drain to Source dV/dt Lead Temperature for Soldering Purposes (1/8” from case for 10 s) MARKING DIAGRAM 1 Power Dissipation RqJA (Note 2) Pulsed Drain Current (4) 22 TA = 85°C Steady State G 1 ORDERING INFORMATION Device Package Shipping† NTMFS4983NFT1G SO−8FL (Pb−Free) 1500 / Tape & Reel NTMFS4983NFT3G SO−8FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: NTMFS4983NF/D NTMFS4983NF THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case (Drain) Parameter RqJC 3.3 Junction−to−Ambient – Steady State (Note 1) RqJA 40 Junction−to−Ambient – Steady State (Note 2) RqJA 74 Junction−to−Ambient − t v 10 sec RqJA 16.3 Unit °C/W 1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1.0 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 10 mA, referenced to 25°C Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 24 V Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 1.0 mA VGS(TH)/TJ ID = 10 mA, referenced to 25°C V 15 TJ = 25°C mV/°C 500 mA ±100 nA 2.3 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance RDS(on) VGS = 10 V VGS = 4.5 V Forward Transconductance gFS 1.2 1.7 5.0 ID = 30 A 1.6 ID = 15 A 1.6 ID = 30 A 2.5 ID = 15 A 2.5 VDS = 1.5 V, ID = 15 A 60 mV/°C 2.1 3.1 mW S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 90 Total Gate Charge QG(TOT) 22.6 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge 3250 VGS = 0 V, f = 1 MHz, VDS = 15 V 1340 pF 2.9 VGS = 4.5 V, VDS = 15 V; ID = 30 A 7.0 nC 6.9 QG(TOT) VGS = 10 V, VDS = 15 V, ID = 30 A 47.9 nC SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 13.5 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 24.9 28.7 ns 10.7 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS4983NF ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 9.4 tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 16.7 ns 35.2 7.4 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.4 TJ = 125°C 0.32 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 2 A 0.7 V 45 VGS = 0 V, dIS/dt = 100 A/ms, IS = 2 A 23 ns 22 QRR 50 nC Source Inductance LS 0.65 nH Drain Inductance LD PACKAGE PARASITIC VALUES Gate Inductance LG Gate Resistance RG 0.20 TA = 25°C 1.5 1.0 W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 NTMFS4983NF 200 4.0 V VGS = 3.4 V 3.6 V 4.2 V 3.2 V 4.4 V to 4.5 V 3.0 V 7.5 V to 10 V 2.8 V 2.6 V 140 120 100 1 2 3 TJ = 125°C 80 TJ = 25°C 60 TJ = −55°C 40 20 4 0 5 1.0 1.5 2.0 2.5 3.0 3.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 2.0E−02 4.0 3.0E−03 ID = 30 A TJ = 25°C 1.8E−02 1.6E−02 2.8E−03 TJ = 25°C 2.6E−03 1.4E−02 VGS = 4.5 V 2.4E−03 1.2E−02 2.2E−03 1.0E−02 2.0E−03 0.8E−02 1.8E−03 0.6E−02 VGS = 10 V 1.6E−03 0.4E−02 1.4E−03 0.2E−02 0.0E+00 2.0 1.2E−03 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 5 20 35 50 65 80 95 110 125 140 155 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.8 1.7 ID = 20 A 1.6 VGS = 10 V 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 −50 −25 0 1.00E−01 VGS = 0 V TJ = 150°C IDSS, LEAKAGE (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 160 2.4 V 0 VDS = 5 V 180 ID, DRAIN CURRENT (A) 200 190 180 170 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) TYPICAL PERFORMANCE CURVES 1.00E−02 TJ = 125°C 1.00E−03 TJ = 25°C 1.00E−04 25 50 75 100 125 150 1.00E−05 0 5 10 15 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 4 25 NTMFS4983NF TYPICAL PERFORMANCE CURVES 11 C, CAPACITANCE (pF) 3600 VGS, GATE−TO−SOURCE VOLTAGE (V) 4000 VGS = 0 V TJ = 25°C Ciss 3200 2800 2400 Coss 2000 1600 1200 800 400 Crss QT 9 8 7 6 5 4 Qgs Qgd 5 10 ID = 30 A TJ = 25°C VDD = 15 V VGS = 10 V 3 2 1 0 0 0 5 10 15 20 25 30 0 15 20 25 30 35 40 45 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 50 10 1000 9 VDD = 15 V ID = 10 A VGS = 10 V IS, SOURCE CURRENT (A) td(off) 100 t, TIME (ns) 10 tf tr td(on) 10 VGS = 0 V TJ = 25°C 8 7 6 5 4 3 2 1 1 1 10 100 0.3 0.4 0.5 0.6 Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 100 ms 1 ms 10 10 ms 0 V < VGS < 10 V Single Pulse TC = 25°C 0.1 dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 10 EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (A) 0.2 VSD, SOURCE−TO−DRAIN VOLTAGE (V) 10 ms 0.01 0.01 0.1 RG, GATE RESISTANCE (W) 1000 1 0 0.0 100 110 ID = 45 A 100 90 80 70 60 50 40 30 20 10 0 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature www.onsemi.com 5 0.7 150 NTMFS4983NF TYPICAL PERFORMANCE CURVES 100 D = 0.5 0.2 0.1 r(t) (°C/W) 10 0.05 1 0.02 0.01 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (s) Figure 13. Thermal Response www.onsemi.com 6 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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