NTMFS4C01NT3G

NTMFS4C01N MOSFET – Power, Single, N-Channel, SO-8FL 30 V, 0.9 mW, 303 A Features • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 0.9 mW @ 10 V 30 V 303 A 1.2 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS "20 V TC = 25°C ID 303 A TC = 25°C PD 134 W Parameter Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Notes 1, 3) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State ID 47 A TA = 25°C PD 3.2 W TA = 25°C, tp = 10 ms IDM 552 A TJ, Tstg −55 to 150 °C IS 110 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 35 A) EAS 862 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Pulsed Drain Current G (4) S (1,2,3) TA = 25°C Power Dissipation RqJA (Notes 1, 2, 3) D (5) Steady State Operating Junction and Storage Temperature Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. N−CHANNEL MOSFET MARKING DIAGRAM D 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 A Y W ZZ S S S G D 4C01N AYWZZ D D = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Symbol Value Unit Device Package Shipping† Junction−to−Case − Steady State RqJC 0.93 °C/W NTMFS4C01NT1G Junction−to−Ambient − Steady State (Note 2) RqJA 39 SO−8FL (Pb−Free) 1500 / Tape & Reel NTMFS4C01NT3G SO−8FL (Pb−Free) 5000 / Tape & Reel Parameter 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2014 May, 2019− Rev. 2 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTMFS4C01N/D NTMFS4C01N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 16.3 VGS = 0 V, VDS = 24 V mV/°C TJ = 25 °C 1 TJ = 125°C 100 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) Forward Transconductance gFS Gate Resistance RG 1.3 2.2 5.8 V mV/°C VGS = 10 V ID = 30 A 0.71 0.9 VGS = 4.5 V ID = 30 A 0.94 1.2 VDS = 3 V ID = 30 A 183 S 1.0 W TA = 25 °C mW CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 148 Total Gate Charge QG(TOT) 63 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge 10144 VGS = 0 V, f = 1 MHz, VDS = 15 V VGS = 4.5 V, VDS = 15 V; ID = 30 A 5073 pF 18 nC 29 13 QG(TOT) VGS = 10 V, VDS = 15 V, ID = 30 A 139 nC SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 29 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 68 ns 53 36 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.73 TJ = 125°C 0.55 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.1 V 87 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 43 ns 44 147 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS4C01N TYPICAL CHARACTERISTICS 3.4 V 3.6 V 3.2 V 300 4.5 V 250 200 3.0 V 150 2.8 V 100 50 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 0.5 1.0 1.5 2.0 2.5 200 TJ = 25°C 150 100 0 3.0 TJ = 150°C TJ = −55°C 1.5 3 3.5 Figure 2. Transfer Characteristics TJ = 25°C 1.3 1.2 1.1 1.0 0.9 0.8 0.7 4 5 6 7 8 9 10 VGS, GATE VOLTAGE (V) 4 1.5 TJ = 25°C 1.4 1.3 1.2 1.1 VGS = 4.5 V 1.0 0.9 0.8 VGS = 10 V 0.7 0.6 0 50 100 150 200 250 300 350 400 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100000 1.8 VGS = 10 V ID = 30 A IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE (W) 2.5 Figure 1. On−Region Characteristics 1.4 1.6 2 VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 30 A 3 250 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1.5 0.6 300 50 VGS = 2.6 V 0.0 VDS = 3 V 350 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 350 400 10 V ID, DRAIN CURRENT (A) 400 1.4 1.2 1.0 10000 TJ = 125°C TJ = 100°C 1000 TJ = 85°C 100 0.8 0.6 −50 −25 0 25 50 75 100 125 150 10 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 30 NTMFS4C01N TYPICAL CHARACTERISTICS CISS 10k COSS 1k VGS = 0 V TJ = 25°C f = 1 MHz 100 10 0.1 CRSS 10 1 100 11 15 10 9 VDS VGS 8 12 7 6 9 5 4 QGD QGS VDS = 15 V ID = 30 A TJ = 25°C 3 2 1 0 0 20 40 60 80 100 6 3 0 140 120 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1000 tr IS, SOURCE CURRENT (A) td(off) VGS = 4.5 V VDD = 15 V ID = 15 A tf td(on) 100 0.1 1 10 100 10 1 0.1 100 TJ = 150°C 0.3 0.4 TJ = 25°C 0.5 0.6 0.7 TJ = −55°C 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 ID, DRAIN CURRENT (A) t, TIME (ns) 18 QT VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 10 12 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 100k 100 100 ms 10 1 0.1 0.01 1 ms 10 ms 0 V < VGS < 10 V SINGLE PULSE TC = 25°C DC RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0.1 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 100 NTMFS4C01N TYPICAL CHARACTERISTICS 100 RqJA = Steady State = 39°C/W Duty Cycle = 0.5 0.2 0.1 0.05 1 0.02 0.01 R(t) (°C/W) 10 PCB Cu Area = 650 mm2 PCB Cu Thk = 2 oz 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 t, TIME (s) Figure 12. Thermal Impedance (Junction−to−Ambient) 1000 100 IPEAK, (A) 0.001 TJ(initial) = 25°C 10 TJ(initial) = 100°C 1 1.00E−04 1.00E−03 TIME IN AVALANCHE (s) Figure 13. Avalanche Characteristics www.onsemi.com 5 1.00E−02 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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