NTMFS4C020NT3G

MOSFET – Power, Single, N-Channel, Logic Level, SO-8FL 30 V, 0.67 mW, 370 A NTMFS4C020N www.onsemi.com Features • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Optimized for 4.5 Gate Drive These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX 0.67 mW @ 10 V 30 V Symbol 0.95 mW @ 4.5 V D (5) Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS "20 V TC = 25°C ID 370 A TC = 25°C PD 161 W TA = 25°C ID 57 A TA = 25°C PD 3.84 W Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Notes 1, 3) Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1, 2, 3) Steady State Steady State Pulsed Drain Current G (4) S (1,2,3) N−CHANNEL MOSFET MARKING DIAGRAM D IDM 900 A TJ, Tstg −55 to 150 °C IS 110 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 35 A) EAS 862 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Symbol Value Unit Junction−to−Case − Steady State RqJC 0.93 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 39 Parameter 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2016 S S S G 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 A Y W ZZ 1 D 4C020N AYWZZ D D = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION Package Shipping† NTMFS4C020NT1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NTMFS4C020NT3G SO−8 FL (Pb−Free) 5000 / Tape & Reel Device THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) December, 2020 − Rev. 5 370 A 0.78 mW @ 6.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter ID MAX †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTMFS4C020N/D NTMFS4C020N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 16.3 VGS = 0 V, VDS = 24 V mV/°C TJ = 25 °C 1 TJ = 125°C 100 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) 1.3 2.2 5.8 V mV/°C VGS = 10 V ID = 30 A 0.56 0.67 VGS = 6.5 V ID = 30 A 0.56 0.78 VGS = 4.5 V ID = 30 A 0.76 0.95 Forward Transconductance gFS VDS = 3 V, ID = 30 A 183 Gate Resistance RG TA = 25 °C 1.0 2.5 10144 15250 5073 7610 mW S W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 148 350 Total Gate Charge QG(TOT) 63 105 Threshold Gate Charge QG(TH) 18 36 Gate−to−Source Charge QGS 29 58 Gate−to−Drain Charge QGD 13 26 139 230 Total Gate Charge VGS = 0 V, f = 1 MHz, VDS = 15 V VGS = 4.5 V, VDS = 15 V; ID = 30 A QG(TOT) VGS = 10 V, VDS = 15 V, ID = 30 A pF nC nC SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 29 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 68 ns 53 36 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.73 TJ = 125°C 0.55 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.1 V 87 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 43 ns 44 147 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS4C020N TYPICAL CHARACTERISTICS 3.4 V 3.6 V 3.2 V 300 4.5 V 250 200 3.0 V 150 2.8 V 100 50 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 0.5 1.0 1.5 2.0 2.5 200 TJ = 25°C 150 100 0 3.0 TJ = 150°C TJ = −55°C 1.5 TJ = 25°C 1.2 1.1 1.0 0.9 0.8 0.7 0.6 4 5 6 7 8 9 10 VGS, GATE VOLTAGE (V) 3.5 4 1.5 TJ = 25°C 1.4 1.3 1.2 1.1 1.0 0.9 VGS = 4.5 V 0.8 0.7 VGS = 10 V 0.6 0.5 0 50 100 150 200 250 300 350 400 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100000 VGS = 10 V ID = 30 A IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE (W) 3 Figure 2. Transfer Characteristics 1.3 1.6 2.5 Figure 1. On−Region Characteristics 1.4 1.8 2 VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 30 A 3 250 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1.5 0.5 300 50 VGS = 2.6 V 0.0 VDS = 3 V 350 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 350 400 10 V ID, DRAIN CURRENT (A) 400 1.4 1.2 1.0 10000 TJ = 125°C TJ = 100°C 1000 TJ = 85°C 100 0.8 0.6 −50 −25 0 25 50 75 100 125 150 175 10 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 30 NTMFS4C020N TYPICAL CHARACTERISTICS CISS 10k COSS 1k VGS = 0 V TJ = 25°C f = 1 MHz 100 10 0.1 CRSS 10 1 100 12 11 VDS VGS 8 12 7 6 9 5 4 QGD QGS VDS = 15 V ID = 30 A TJ = 25°C 3 2 1 0 0 20 40 60 80 100 6 3 0 140 120 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1000 tr IS, SOURCE CURRENT (A) td(off) VGS = 4.5 V VDD = 15 V ID = 15 A tf td(on) 100 0.1 1 10 100 10 1 0.1 100 TJ = 150°C 0.3 0.5 0.4 TJ = 25°C 0.6 0.7 TJ = −55°C 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 10 ms ID, DRAIN CURRENT (A) t, TIME (ns) 15 10 9 1000 10 18 QT VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 100k 100 100 ms VGS ≤ 10 V TC = 25°C 10 RDS(on) Limit Thermal Limit Package Limit 1 0.1 1 1 ms 10 ms 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 100 NTMFS4C020N TYPICAL CHARACTERISTICS 1 Duty Cycle = 0.5 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 PULSE TIME (s) Figure 12. Thermal Resistance 1000 100 IPEAK, (A) ZqJC (°C/W) 0.2 0.1 TJ(initial) = 25°C 10 TJ(initial) = 100°C 1 1.00E−04 1.00E−03 TIME IN AVALANCHE (s) Figure 13. Avalanche Characteristics www.onsemi.com 5 1.00E−02 0.1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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