NTMFS4C022NT1G

NTMFS4C022N Power MOSFET 30 V, 2.1 mW, 136 A, Single N−Channel, SO−8FL Features • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX 1.7 mW @ 10 V 30 V 136 A 2.4 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS "20 V TC = 25°C ID 136 A TC = 25°C PD 64 W TA = 25°C ID 30 A TA = 25°C PD 3.1 W TA = 25°C, tp = 10 ms IDM 352 A TJ, Tstg −55 to 150 °C IS 53 A EAS 549 mJ Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Notes 1, 3) Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1, 2, 3) Pulsed Drain Current Steady State Steady State ID MAX D (5,6) G (4) S (1,2,3) N−CHANNEL MOSFET Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 11 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL °C 260 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM D 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 A Y W ZZ S S S G D 4C022 AYWZZ D D = Assembly Location = Year = Work Week = Lot Traceability THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Symbol Value Unit Junction−to−Case − Steady State (Note 2) RqJC 1.95 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 40 Parameter 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. ORDERING INFORMATION Device Package Shipping† NTMFS4C022NT1G SO−8FL (Pb−Free) 1500 / Tape & Reel NTMFS4C022NT3G SO−8FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 June, 2018 − Rev. 2 1 Publication Order Number: NTMFS4C022N/D NTMFS4C022N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 18.2 VGS = 0 V, VDS = 24 V mV/°C TJ = 25 °C 1 TJ = 125°C 10 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) 1.3 2.2 4.8 V mV/°C VGS = 10 V ID = 30 A 1.4 1.7 VGS = 4.5 V ID = 30 A 2.0 2.4 mW Forward Transconductance gFS VDS = 3 V, ID = 30 A 136 S Gate Resistance RG TA = 25 °C 1.0 W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 67 Total Gate Charge QG(TOT) 20.8 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge 3071 VGS = 0 V, f = 1 MHz, VDS = 15 V 1673 pF 4.9 VGS = 4.5 V, VDS = 15 V; ID = 30 A nC 8.5 4.7 QG(TOT) VGS = 10 V, VDS = 15 V, ID = 30 A 45.2 nC SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 14 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 32 ns 27 17 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.75 TJ = 125°C 0.6 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.1 V 47 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 23 ns 24 39 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS4C022N TYPICAL CHARACTERISTICS 250 250 4.5 V TJ = 25°C 3.8 V 200 3.6 V 3.4 V 175 VGS = 10 V 150 3.2 V 125 100 3.0 V 75 50 2.8 V 25 2.6 V 200 175 150 125 100 75 TJ = 25°C TJ = −55°C 25 0 0.5 1.0 1.5 2.0 2.5 2.5 3 3.5 4 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = 30 A 2.8 TJ = 25°C 2.6 2.4 2.2 2.0 1.8 1.6 1.4 4 5 6 7 8 9 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 Figure 3. On−Resistance vs. VGS 4.5 3.0 TJ = 25°C 2.8 2.6 2.4 VGS = 4.5 V 2.2 2.0 1.8 1.6 VGS = 10 V 1.4 0 25 50 75 100 125 150 175 200 225 250 ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.8 10000 VGS = 0 V ID = 30 A VGS = 10 V IDSS, LEAKAGE (nA) 1.6 2 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 3.0 3 1.5 3.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) TJ = 150°C 50 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) VDS = 3 V 225 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 225 1.4 1.2 1.0 TJ = 125°C 1000 TJ = 100°C TJ = 85°C 100 0.8 0.6 −50 10 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 30 NTMFS4C022N VGS, GATE−TO−SOURCE VOLTAGE (V) 10000 C, CAPACITANCE (pF) Ciss Coss 1000 100 Crss VGS = 0 V TJ = 25°C f = 1 MHz 10 0.1 1 10 100 18 11 QT 10 15 9 8 12 VGS 7 VDS 6 9 5 4 Qgs Qgd 6 TJ = 25°C VDS = 15 V ID = 30 A 3 2 1 0 0 5 10 15 20 25 30 35 40 45 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 3 0 50 1000.0 1000 VDD = 15 V ID = 15 A VGS = 4.5 V td(off) tf 100 tr td(on) IS, SOURCE CURRENT (A) VGS = 0 V 100.0 TJ = 150°C 10.0 TJ = 25°C 1.0 TJ = −55°C 0.1 10 0.1 1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 ID, DRAIN CURRENT (A) t, TIME (ns) 12 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 1 ms 100 10 ms 10 ms 10 VGS ≤ 10 V TC = 25°C 100 ms RDS(on) Limit Thermal Limit Package Limit 1 0.1 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 100 NTMFS4C022N TYPICAL CHARACTERISTICS R(t) (°C/W) 100 RqJA Steady State = 40°C/W Duty Cycle = 50% 10 20% 10% 5% 1 2% 1% PCB Cu Area = 650 mm2 PCB Cu Thk = 2 oz 0.1 0.01 Single Pulse 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 PULSE TIME (sec) Figure 12. Thermal Impedance (Junction−to−Ambient) 100 IPEAK, (A) 0.001 1E−06 TJ(initial) = 25°C 10 TJ(initial) = 100°C 1 1.00E−04 1.00E−03 TIME IN AVALANCHE (s) Figure 13. Avalanche Characteristics www.onsemi.com 5 1.00E−02 1E+01 1E+02 1E+03 NTMFS4C022N PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 2X 0.20 C D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. A 2 B D1 2X 0.20 C 4X E1 q E 2 c 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q A1 4 TOP VIEW C SEATING PLANE DETAIL A 0.10 C A 0.10 C SIDE VIEW 0.10 b C A B 0.05 c RECOMMENDED SOLDERING FOOTPRINT* DETAIL A 2X 8X 0.495 MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.30 5.15 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.15 6.30 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 4.560 2X e/2 1.530 e L 1 4 K 3.200 4.530 E2 PIN 5 (EXPOSED PAD) L1 M 1.330 2X 0.905 1 G D2 0.965 4X BOTTOM VIEW 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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